• Journal of the Institute of Electronics and Information Engineers
• /
• v.49 no.12
• /
• pp.179-183
• /
• 2012

The random dopant fluctuation (RDF) effects of tunneling field-effect transistors (TFETs) have been observed by using atomistic 3-D device simulation. Due to extremely low body doping concentration, the RDF effects of TFETs have not been seriously investigated. However, in this paper, it has been found that the randomly generated and distributed source dopants increase the variation of threshold voltage ($V_{th}$), drain induced current enhancement (DICE) and subthreshold slope (SS) of TFETs. Also, some ways of relieving the RDF effects of TFETs have been presented.