• Journal of Power Electronics
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• 제15권3호
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• pp.602-609
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• 2015

In this paper, a zero current transition (ZCT) double-ended flyback converter is proposed. All of the switching elements act under soft switching conditions and the voltage stress of the main switches is limited to the input voltage due to the innate behavior of the double-ended flyback converter. Providing soft switching conditions and clamping the voltage stress improves the efficiency and electromagnetic compatibility (EMC). The Proposed converter is analyzed in detail and its operating modes are discussed in detail. Experimental results are presented to verify the theoretical predictions. Moreover, the conducted electromagnetic emissions of the proposed ZCT double-ended flyback converter are measured to show another merit of the proposed converter in addition to providing soft switching conditions. The measured electromagnetic interference (EMI) of the proposed converter demonstrates that its EMI is lower than the conventional double-ended flyback converter. Furthermore, two simple and cost effective EMI reduction methods are applied to satisfy the EMC standard.

• 한국전자파학회논문지
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• 제14권9호
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• pp.944-949
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• 2003

본 논문에서는 InCaP/GaAs HBT공정을 이용하여 낮은 DC 파워소모, 낮은 NF, 낮은 IMD 와 광대역 특성을 갖는 Ku-band LNB용 이중평형믹서를 설계하였다. 제작된 믹서는 3 V, 16 mA 의 U조건과 -23 dBm의 RF입력 조건하에서 5 dB의 변환이득, 14 dB의 NF, 17.9 GHz의 대역폭 그리고 50.34 dBc의 IMD특성을 얻었다. 낮은 IMD 특성, 광대역폭, 낮은 파워소모 특성은 InGaP/GaAs HBT의 선형성과 광대역 입력 정합기법과 바이어스 점의 최적화를 통해 얻을 수 있었다.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 춘계학술발표대회 논문집
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• pp.133-137
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• 2011

Low-e glazing is classified as soft low-e glazing and hard low-e glazing. Hard low-e glazing can be temperable and its handling is comfortable because its coating film is a oxide film generated at high temperatures. But there is a fatal weakness that its insulation performance and shielding performance are lower compared to soft low-e glazing by low electrical conductivity of coating film. Soft low-e glazing is excellent because its coating film consists of Ag that is excellent electrical conductivity and it has strength that can supply various product consumers want. But soft low-e glazing has weaknesses that temperable and handling are difficult because Ag is oxidized easily. Therefore this study analyzes thermal performance of glazing by changing filling gas according to applying low-e glazing through simulation to judge performance before making sample. After this process, a comparative experimental study was done through TVS by making temperable low-e glazing.

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.789-798
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• 1996

The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA. $V_{FB}$ measuring system. In the trap density double nitride layer structures were higher by 0.85*10$^{16}$ $m^{-2}$ than one nitride layer structure, and the AVFB with oxide field was linearly increased. However, one nitride layer structure was linearly increased and saturated above 9.07*10$^{8}$ V/m in oxide field. In the erase behavior, the hole injection from silicon instead of the trapped electron emission was observed, and also it was highly dependent upon the pulse amplitude and the pulse width. In the memory retentivity, double nitrite layer structures were superior to one nitride layer structure, and the decay rate of the trapped electron with increasing temperature was low. At increasing the number on BTS, the variance of AVFB of the double nitride layer structures was smaller than that of one nitride layer structure, and the trapped electron retention rate was high. In this paper, the double nitride layer structures were turned out to be useful in improving the nonvolatile memory characteristics.

• 한국세라믹학회지
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• 제32권7호
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

• 경영과정보연구
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• 제24권
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• pp.97-124
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• 2008

This study aimed to explore how the involvement of environment influenced eight subjects group. Thus, experiment was performed to clarify the role that the attitude of university student consumer plays in the communication process depending on the level of engagement of consumer in the environment and method to raise donation for preservation of environment. Analyzing as per the type of appeal, the mark in altruistic appeal type was higher in all variables than egoistic appeal type. Finally, checking the average mark of each variable as per the condition of donation, the value in unconditional donation was higher than in all variables than conditional donation. It was found 3 groups composed of 2 groups with high level of environmental engagement and 1 group with low level of environmental engagement were suitable to double mediation model among the 8 experimental groups. The group where double mediation model best corresponds than any other group was high level related to environment and the group that contacts altruistic appeal and the message in the form of conditional donation. It was also found that the group that has low level of environmental engagement and contacts egoistic appeal type and conditional donation shows the group that corresponds to double mediation model in the second place among the 8 groups. Finally, it was found that the group that has high level of environmental engagement and is stimulated by altruistic appeal and unconditional donation corresponds to double mediation model. Depending on the condition of message stimulation, unconditional donation is found to better correspond to double mediation model than conditional donation. However, opposite phenomena is observed when the level of environmental engagement is high and appeal type is egoistic. Namely, it was found that conditional donation better corresponds to double mediation model than unconditional donation.

• The Korean Journal of Pain
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• 제14권2호
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• pp.218-224
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• 2001

Background: Response to diagnostic blocks does not consistently predict the outcome of interventional facet denervation. We investigated the relationship between pain relief by the percutaneous radiofrequency denervation of the lumbar zygapophysial joints with the result of facet joint diagnostic local anesthetic injection in patients with back pain originating from the lumbar zygapophysial joint. Methods: There were 35 patients enrolled, with ranging in age from 25 to 76 years ($52.6{\pm}12.7$ years, mean ${\pm}$ SD). We studied 7 men (20%) and 28 women (80%). All patients underwent double diagnostic block of $L_{3/4}$, $L_{4/5}$ and $L_5-S_1$ facet joint with 0.5% bupivacaine. The 35 patients fell into the following group. (1) Group A (n = 16): those who felt clear relief (pain free with Likert scale) from the double diagnostic block (2) Group B (n = 19): 11 patients who were always equivocal in their response to the double diagnostic block and 8 patients who were either pain free or equivocal in their response to the double diagnostic block. All 11 patients were done the facet joint denervation. The effect on the pain was evaluated with 4 point Likert scale 1, 6 and 12 weeks after the procedure. We evaluated the relationship between the pain response to diagnostic block and the pain relief with facet joint denervation. Results: Significant correlation was observed between the response to diagnostic block and pain relief with facet denervation (P < 0.05). We found no correlation between the categories of spinal operation and pain response to facet denervation (P value > 0.05). Conclusions: A satisfactory result of lumbar facet joint denervation can be obtained in many patients, especillay in patients whose pain were relieved by the diagnostic double facet joint block. It may be said that facet joint denervation for mechanical low back pain using radiofrequency thermocoagulation is a safe, easy, and repeatable technique.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(1)
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• pp.189-192
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• 2000

In this paper, we consider a code acquisition of W-CDMA signals over multipath Rayleigh fading channel when double-dwell serial search code acquisition is used for initial synchronization. We derive the detection and false alarm probability, and mean acquisition time mathematically by taking into account of multiple H$\_$l/ cells and double-dwell serial search. It is noteworthy that the more the number of the post-detection integration, the shorter the mean acquisition time in low SNR.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.213-216
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• 2002

A double-heterostructure AIGaAs/GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor) using digital recess has been successfully realized. Futhermore, the differences of gm,nax, fT, fmax between two samples are as low as 0.62%, 1.58% and 2.56 % respectively. Experimental results are presented demonstrating the etch rate and Process invariability with respect to hydrogen peroxide and acid exposure times with uniformity among devices on a sample.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권4호
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• pp.388-396
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• 2012

In this paper, a $320{\times}240$ pixel, 80 frame/s CMOS image sensor with a low power dual correlated double sampling (CDS) scheme is presented. A novel 8-bit hold-and-go counter in each column is proposed to obtain 10-bit resolution. Furthermore, dual CDS and a configurable counter scheme are also discussed to realize efficient power reduction. With these techniques, the digital counter consumes at least 43% and at most 61% less power compared with the column-counters type, and the frame rate is approximately 40% faster than the double memory type due to a partial pipeline structure without additional memories. The prototype sensor was fabricated in a Samsung $0.13{\mu}m$ 1P4M CMOS process and used a 4T APS with a pixel pitch of $2.25{\mu}m$. The measured column fixed pattern noise (FPN) is 0.10 LSB.