• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.793-796
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• 2003

The electronics of a mobile robot ill nuclear facilities is required to satisfied the reliability to sustain survival in its radiation environment. To know how much radiation the robot has been encountered to replace sensitive electronic parts, a dosimeter to measure total accumulated dose is necessary. Among many radiation dosimeters or detectors, semiconductor radiation sensors have advantages in terms of power requirements and their sires over conventional detectors. This paper describes the use of the radiation-induced threshold voltage change of a commercial power pMOSFET as an accumulated radiation dose monitoring mean and that of the photo-current of a commercial PIN Diode as a dose-rate measurement mean. Commercial p-type power MOSFETs and PIN Diodes were tested in a Co-60 gamma irradiation facility to see their capabilities as radiation sensors. We found an inexpensive commercial power pMOSFET that shows good linearity in their threshold voltage shift with radiation dose and a PIN diode that shows good linearity in its photo-current change with dose-rate. According to these findings, a radiation hardened hybrid electronic radiation dosimeter for nuclear robots has been developed for the first time. This small hybrid dosimeter has also an advantage in the point of view of reliability improvement by using a diversity concept.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.2522-2525
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• 2001

Si PIN diodes are subject to be damaged from the exposure of fast neutron by displacement of Si lattice structure. The defects are effective recombination centers for carriers which migrate through the base region of the PIN diode when forward voltage is applied. It causes an increase in current and a decrease in resistivity of the diode. This paper presents the development of a neutron sensor based on displacement damage effect. PIN diodes having various structures were made bymicro-fabrication process, and neutron beam test was performed to identify neutron damage effect to the diode. From a result of the test, it was shown that the forward voltage drop of the diode, at a constant current, has good linearity for neutron dosage. Also it was found that the newton dosage can be measured by the pin diode neutron dosimeter with constant current power.

• Proceedings of the KIEE Conference
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• 2000.11d
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• pp.754-757
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• 2000

Si PIN diodes are subject to be damaged from the exposure of fast neutron by displacement of Si lattice structure. The defects are effective recombination centers for carriers which migrate through the base region of the PIN diode when forward voltage is applied. It causes an increase in current and a decrease in resistivity of the diode. This paper presents the development of a neutron sensor based on displacement damage effect. PIN diodes having various structures were made by micro-fabrication process, and neutron beam test was performed to identify neutron damage effect to the diode. From a result of the test, it was shown that the forward voltage drop of the diode, at a constant current, has good linearity for neutron dosage. Also it was found that the newton dosage can be measured by the pin diode neutron dosimeter with constant current power.

• Journal of Radiation Protection and Research
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• v.25 no.4
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• pp.197-205
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• 2000

A prototype electronic dosimeter(PED) adopting a silicon PIN diode detector as a radiation detector has been developed, manufactured and test-evaluated. A radiation signal processing circuit has been electronically tested and then the radiation detection characteristics of this PED has been performance-tested by using a reference photon radiation field. As a result in a electronic performance test, radiation signals from a detector were well observed in the signal processing circuit. The radiation detection sensitivity of this PED after several test-irradiations to $^{137}Cs$ gamma radiation source appeared to be 1.85 cps/$Gy{\cdot}h^{-1}$ with 19.3% of the coefficient of variation, which satisfied the performance criteria for the active personnel radiation monitor. Further improvement of the electronic circuit and operating program will enable the PED to be used in personal monitoring purpose.

• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.1991-1997
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• 2019

In this manuscript, we present a method for the direct calculation of an ambient dose equivalent (H^* (10)) for the external gamma-ray exposure with an energy range of 40 keV to 2 MeV in an electronic personal dosimeter (EPD). The designed EPD consists of a 3 × 3 ㎟ PIN diode coupled to a 3 × 3 × 3 ㎣ CsI (Tl) scintillator block. The spectrum-to-dose conversion function (G(E)) for estimating H^* (10) was calculated by applying the gradient-descent method based on the Monte-Carlo simulation. The optimal parameters for the G(E) were found and this conversion of the H^* (10) from the gamma spectra was verified by using ²⁴¹Am, ¹³⁷Cs, ²²Na, ⁵⁴Mn, and ⁶⁰Co radioisotopes. Furthermore, gamma spectra and H^* (10) were obtained for an arbitrarily mixed multiple isotope case through Monte-Carlo simulation in order to expand the verification to more general cases. The H^* (10) based on the G(E) function for the gamma spectra was then compared with H^* (10) calculated by simulation. The relative difference of H^* (10) from various single-source spectra was in the range of ±2.89%, and the relative difference of H^* (10) for a multiple isotope case was in the range of ±5.56%.

• Journal of Sensor Science and Technology
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• v.9 no.4
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• pp.274-280
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• 2000

This paper deals with an experimental study to apply commercial semiconductors to measure radiation dose rate for gamma ray. Since the low cost, small size, high efficiency and ruggedness of silicon photodiodes make them attractive photodetectors, they coulde be effectively used in measuring any radiation such as gamma ray. Most PN photodiodes show that the reverse current increases when the light is increased. Therefore the depletion region of them have influence on the reverse current, so we choose silicon PIN photodiodes with large depletion region. In order to detect radiation dose rate and then, to apply in developing any gamma ray dosimeter, some examinations and experiments were performed to PIN photodiodes in this work. Two kinds of PIN photodiodes, such as NEC's PH302 and SIEMENS's BPW34, were tested in a Co-60 gamma irradiation facility with a semiconductor parameter analyzer. As a result, we found that such PIN photodiodes present good linearity in diode current characteristics with dose rate. Therefore silicon PIN photodiodes could be suitably used in designing gamma ray dosimeters.

• 대한공업교육학회지
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• v.33 no.2
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• pp.325-339
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• 2008

In this paper, we developed a module that can execute the data acquisition of the real-time measured radiant rays in the specific part of the nuclear power station. This module that includes the RF communication function, paces around the power station, being loaded on robot and can obtain the generated radiant rays in the various places through the detecting devices. It is considered that this new developed radiant rays acquisition method will have the higher degree of efficiency as compared with the existing method and reduce the expenses of the maintenance and repair work.