• Title/Summary/Keyword: dopping

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이온주입 에너지에 따른 Auger Si KLL Peak Shift 및 Ti 계열 화합물의 Chemical State 관찰

  • Heo, Sung;Park, Yoon-Baek;Min, Gyung-Yeol;Lee, Sun-Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.83-83
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    • 1999
  • 본 연구에서는 Auger Elecrtron Spectroscopy (AES) 장비를 이용하여 Silicone Wafer 표면에 BF 이온을 주입시킨 후 Dopping 농도 및 Implantation 에너지에 따른 Si KLL Peak의 변화를 관찰하였다. 또한 PVD Ti 계열 화학물의 시료에 대하여 Peak의 Shape 변화를 관찰하였다. 1)Dopping 농도 및 Implantation 에너지에 따른 Si KLL Peak의 변화 관찰 일반적으로 Silicone 기판에 Arsenic(3가)을 Dopping 하였을 경우, Si KLL Peak의 Kinetic Energy 값은 순수 Si Peak보다 더 작은 값으로 Shift 하며, Boron (5가)을 Dopping하였을 경우에는 더 큰 값으로 Shift 한다. 이론적으로 N-type Si의 에너지 차이는 약 1.0eV로 보고되어 있으며, AES를 이용하여 실험적으로 측정된 값은 약 0.6eV정도로 알려져 있다. 이러한 차이는 Dopping 농도에 따라 Valance Band의 에너지 값이 변화하기 때문이라고 알려져 있다. 본 연구에서는 BF2를 Si에 이온 주입하여 입사 에너지 및 dose 량에 따른 Si KLL Peak의 변화를 관찰하였다. 그림1과 같이 Si KLL Peak는 Implantation Energy가 작을수록 Kinetic Energy가 높은 곳으로 Shift 한다. 이는 LOw Energy로 이온 주입하면, Projected Range (Rp)가 High Energy로 이온 주입할 때보다 작기 때문이며, 이 결과를 Secondary Ion Mass Spectroscopy (SIMS) 및 TRIM simulation을 이용하여 확인하였다. 또한 표면에서의 전자 Density의 변화와 Implantation energy와의 관계를 시료의 표면에서 반사되어 나오는 전자의 에너지 손실(Reflected Electron Energy Loss Spectroscopy:REELS)을 통하여 고찰하였다. 2) PVD Ti 계열화합물의 시료에 대한 peak의 shape 가 변화하며, TiL3M23V (Ti2) 및 TiL3M23M23 (Til) Peak의 Intensity Ratio가 변화한다. 따라서 본 연구에서는 그림 2와 같이 Ti 결합 화합물에서의 Ti Auger Peak의 특성 에너지 값과 Peak Shape를 관찰하여, AES를 이용하여 Ti 계열의 화합물에 대한 Chemical state 분석의 가능성을 평가하였다.

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A study on the piezoelectric characteristic of 0.02PYW-0.98PZT system piezoelectric ceramics dopped with NiO, $Cr_2O_3$ (NiO 및 $Cr_2O_3$를 첨가한 0.02PYW-0.98PZT계 세라믹의 압전특성에 관한 연구)

  • Kim, Jean-Shop;Kim, Hyun-Chul;Woon, Hyen-Sang;Bae, Seon-Gi
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1789-1791
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    • 1999
  • In consideration of piezoelectric characteristic and Temperature stability, 3-element system dopped with NiO, $Cr_2O_3$ well-known as Hardner and Stabilizer whose primary element is PZT was eximanated its structure, piezoelectric characteristics, dopping with Nio, $Cr_2O_3$. We think that piezoelectric Characteristic is developed, remenent polarization and $E_c$ can developed in specimens by dopping with NiO, $Cr_2O_3$ additive. also, electromechanical quality factor largely showed tendency of decrement. According to dopping NiO, $Cr_2O_3$ more.

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Dopping Effect of Fluorine Atom on the Superconductivity of $YBa_2Cu_3O_{7-x}F_y$

  • Kim, Keu-Hong;Cho, Seun- Koo;Kim, Yoo-Young;Park, Jong-Sik;Choi, Mu-Yong
    • Bulletin of the Korean Chemical Society
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    • v.11 no.5
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    • pp.460-463
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    • 1990
  • The normal and fluorinated high-Tc superconducting materials, $YBa_2Cu_3O_{7-x}F_y$with $0.25{\leq}x{\leq}0.55\;and\;0.00{\leq}y{\leq}0.30$, were synthesized to investigate the dopping effect of fluorine atom on the superconductivity of Y123 and studied by X-ray diffraction analysis and electron probe microanalysis, resistivity and thermopower measurements, and polarized micro-Raman spectroscopy. The reproducible micro-Raman spectra were recorded and analyzed. The coherent assignments could be suggested for the spectra of normal and fluorinated samples. The fluorine atoms introduced were found to be substituted for oxygen in pyramidal Cu-O units rather than in Cu-O chains. The unit cell parameters were decreased upon the substitution of oxygen by fluorine atom. From the decreasing cell parameters and Tc, the increasing thermopower, and the possible assignments of the vibrational modes, it could be suggested that the dopping of fluorine atom localizes the superconducting electrons in Y123.

A study on the electrical characteristic of 0-02PYW-0-98PZT ceramics dopped with NiO, $Cr_2O_3$ (NiO, $Cr_2O_3$를 첨가한 0-02PYW-0.98PZT세라믹의 전기적특성에 관한 연구)

  • 김진섭;김현철;손효승;임인호;배선기
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.638-641
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    • 1999
  • In consideration of Dielectric loss and Temperature stability, 3-element system dopped with NiO, $Cr_2O_3$, well-known as Hardner and Stabilizer whose primary element is PZT was eximanated its structure, Temperature Coefficient of Capacitor, relative resistivity for Temperature Compensation condensor study. dopping with Nio, $Cr_2O_3$, Temperature Characteristic is developed, Dielectric loss largely represented useful1 small values in specimens dopped with NiO 0.2wt%, and specimence sintered at $110^{\circ}C$ dopped with $Cr_2O_3$, 0.1wt% also relative resistivity largely showed tendency of decrement According to dopping NiO more.

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Fabrication of Transition Metal doped Sapphire Single Crystal by High Temperature and Pressure Acceleration Method

  • Park, Eui-Seok;Jung, Choong-Ho;Kim, Moo-Kyung;Kim, Hyung-Tae;Kim, Yoo-Taek;Hong, Jung-Yoo
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1998.09a
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    • pp.97-102
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    • 1998
  • Transition metal Cr3+ and Fe3+ ion was diffused in white sapphire {0001}, {1010} crystal plane which were grown by the Verneuil method. It enhanced and changed the physical, electrical and optical properties of sapphires. After mixing the metallic oxide and metal powder, it were used for diffusion. Metallic oxide was synthesized by precipitation method and it's composition was mainly alumina which doped with chromium or ferric oxide. In case using metallic oxide, the dopping was slowly progressed and it needed the longer duration time and higher temperature, relatively. Metallic powder was vapoured under 1x10-4 torr of vacuum pressure at 1900(iron metal) and 2050(chromium)℃, first step. Diffusion condition were kept by 6atm of N2 accelerating pressure at 2050∼2150℃. Each surface density of sapphire crystal are 0.225(c) and 0.1199atom/Å2(a). The color of the Cr-doped sapphires was changed to red. Dopping reaction was come out more deep in th plane of {1010} than {0001}. It was speculated that the planar density was one of the factors to determine diffusion effect.

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Determination of ${\alpha}-Keto$ Acids in Serum and Urine Using 1,2-Diamino-4,5-methylendioxybenzene as a Fluorescent Derivatizating Agent by High Performance Liquid Chromatography (HPLC법에 의한 1,2-디아미노-4,5-메틸렌디옥시벤젠을 형광유도체화제로 한 혈청 및 뇨 중의 ${\alpha}$-케토산의 분석)

  • Ok, Chi-Wan;Kim, Dae-Ki;Park, Song-Ja;Park, Jong-Sei
    • YAKHAK HOEJI
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    • v.36 no.4
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    • pp.370-378
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    • 1992
  • A simple and sensitive high performance liquid chromatographic method to quantitate ${\alpha}-keto$ acids in serum and urine was investigated. ${\alpha}-Keto$ acids react with 1,2-diamino-4,5-methylenedioxybenzene (DMB) in the presence of 2-mercapto-ethanol and sodium hydrogen sulfite to form highly fluorescent derivatives, substituted 6,7-methylenedioxyquinoxalinol. The derivatization procedure was performed in water bath at $100^{\circ}C$, and completed within 50 min. By the use of a reversed-phase column and multi-step gradient with two solvents, a mixture containing twelve of these derivatives were efficiently resolved within 35 minutes. The optimal wavelengh of the fluorescence detector are ${\lambda}_{ex}=364\;nm$ and ${\lambda}_{em}=445\;nm$. The quantitation of the individual ${\alpha}-Keto$ acids was reproducible with relative standard deviation of $3.0{\sim}7.9%$ and had a detection limits of $10{\sim}60$ fmol, except for p-hydroxyphenylpyruvic acid (960 fmol).

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