• 제목/요약/키워드: doping state

검색결과 250건 처리시간 0.031초

The Initial Irreversible Capacity of the First Doping/Undoping of Lithium into Carbon

  • Doh, Chil-Hoon;Kim, Hyun-Soo;Moon, Seong-In
    • Carbon letters
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    • 제1권3_4호
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    • pp.148-153
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    • 2001
  • The initial irreversible capacity, $Q_i$, is one of the parameters to express the material balancing of the cathode to anode. We introduced new terms, which are the initial intercalation Ah efficiency (IIE) and the initial irreversible specific capacity at the surface ($Q_{is}$), to express precisely the irreversibility of an electrode/electrolyte system. Two terms depended on kinds of active-materials and compositions of the electrode, but did not change with charging state. MPCF had the highest value of IIE and the lowest value of $Q_{is}$ in 1M $LiPE_6$/EC + DEC (1 : 1 volume ratio) electrolyte. IIE value of $LiCoO_2$ electrode was 97-98%, although the preparation condition of the material and the electrolyte were different. $Q_{is}$ value of $LiCoO_2$ was 0~1 mAh/g. MPCF-$LiCoO_2$ cell system had the lowest of the latent capacity. $Q_{is}$ value increased slightly by adding conductive material. IIE and $Q_{is}$ value varied with the electrolyte. By introducing PC to EC+DEC mixed solvent, IIE values were retained, but $Q_{is}$ increased. In case of addition of MP, IIE value increased and $Q_{is}$ value also increased a little.

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고체전해질형 연료전지용 전해질 제작 및 La1-xSrxMnO3의 특성에 관한 고찰 (Electrolyte Preparation and Characteristics of La1-xSrxMnO3 for Solid Oxide Fuel Cell)

  • 임형렬;이주성
    • 공업화학
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    • 제7권1호
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    • pp.9-17
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    • 1996
  • 고체전해질형 연료전지용 전해질로 사용되는 8mol% YSZ($Y_2O_3$ stabilized zirconia)의 소결조건을 변화시켜 이온전도도를 측정하였다. 그 결과 소결조건이 $1400^{\circ}C$, 10시간이었을 때 가장 높은 값인 $10^{-1}S.cm^{-1}$를 나타내었다. 또한 산소극재료로서 $La_{1-x}Sr_xMnO_3$($0{\leq}{\times}{\leq}1$)를 고상반응법으로 제조하여 과전압, 전자 전도도, 전해질인 YSZ와의 계면저항등을 살펴보았다. 그 결과 La에 대한 Sr의 치환량이 50mol%일 때 가장 우수한 특성을 나타내었다.

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$(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z$ 계의 초전도 및 자기적 특성 (Superconducting and Magnetic Properties of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z$ System)

  • 이호근
    • Progress in Superconductivity
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    • 제13권3호
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    • pp.163-168
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    • 2012
  • The effects of Ta substitution on the superconducting and magnetic properties of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z(0{\leq}x{\leq}0.5)$ system have been investigated. The X-ray diffraction measurements indicate that the Ta ion replaces Ru sites up to x = 0.4. It is found that the Ta substitution for Ru significantly reduces the weak-ferromagnetic component of the field-cooled magnetic susceptibility without an appreciable change of room temperature thermopower at lower Ta doping level below x = 0.2. The resistive transition temperature tends to decrease monotonically from 27 K for the x = 0 sample to 16 K (9 K) for the x = 0.4 (x = 0.5) sample. These results suggest that superconductivity of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z$ compound is not significantly affected by the magnetic state of the Ru sublattice. The experimental results are discussed in connection with previous reports on the effects of Nb substitution.

따뜻한 백색 LED의 제조를 위한 Sr3SiO5:Eu2+ 형광체에서의 융제 첨가 영향 (Influence of Fluxing Agents in Sr3SiO5:Eu2+ Phosphors for Fabrication of Warm White Light Emitting Diodes)

  • 김현호;정강섭;이승원;김병규
    • 한국세라믹학회지
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    • 제49권1호
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    • pp.105-110
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    • 2012
  • In this paper, a yellow phosphor $Sr_3SiO_5:Eu^{2+}$ that emits efficiently at the 450 nm excitation for warm white LED is studied. In addition, the effects of various flux $BaF_2$, $NH_4Cl$ on the emission spectra were investigated. The samples were synthesized through conventional solid state reaction under reducing atmosphere of 95% $N_2$-5% $H_2$ mixture at the high temperature. All phosphors showed a excitation band from 450 nm and broad band emission peaking at region of 580 nm. The optimal concentration of $BaF_2$ flux is 3 wt% for $Sr_3SiO_5$ with doping 0.05mol Eu phosphors fired in a reductive atmosphere. The phosphor showed highest emission peaking at 582 nm.

Synthesis of new Pb-based layered cuprates in (Pb,S)(Sr,La)CuOz compounds

  • Kim, Jin;Lee, Ho Keun
    • 한국초전도ㆍ저온공학회논문지
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    • 제20권3호
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    • pp.1-4
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    • 2018
  • The effect of sulfate substitution on the formation of (Pb,S)-1201 type phase was investigated. Polycrystalline samples with nominal compositions of $(Pb_{0.5}B_{0.5-x}S_x)(Sr_{2-y}La_y)CuO_z$, (x = 0 - 0.5, y = 0.7 - 1.0) and $(Pb_{0.5}S_{0.5})(Sr_{2-y}La_y)CuO_z$ (y = 0.5 - 1.0) were prepared by using a solid-state reaction method. The samples were characterized by powder X-ray diffraction (XRD) and resistivity measurements. XRD data revealed that almost-single (Pb,S)-1201 phase samples could be obtained for x = 0.5 and y = 0.9-1.0, judging from the similar results of the XRD patterns between the (Pb,S)-1201 and (Pb,B)-1201 phases. Each of the samples has a crystal structure with tetragonal symmetry. The sample with x = 0.5 and y = 0.9 is found to show an onset of resistivity dropping at over 23 K and zero resistivity at 12 K.

탄소 나노 튜브 함량에 따른 TN 액정 셀의 잔류 DC 연구 (Effect of Carbon Nanotube Concentrations on Residual DC of a Twisted Nematic Liquid Crystal Cell)

  • 백인수;박경아;전상연;안계혁;이승희;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.297-298
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    • 2005
  • We have fabricated twisted nematic (TN) liquid crystal cells doped by carbon nanotubes (CNTs) with different CNT wt. %. With a minute amount doping, multi-walled CNTs did not perturb the liquid crystal orientations at the off- and on-state. The hysteresis studies of voltage-dependent capacitance (V-C) under the influence of electric field generated by ac and dc voltage show that the residual do, which is tightly related to image sticking problem in liquid crystal displays, is greatly reduced due to ion trapping by CNTs. Also, the V-C hysteresis shows dependency of capacitance on concentration of multi-walled CNTs.

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Magnetic and Electric Properties of Multiferroic Ni-doped BiFeO3

  • 유영준;황지섭;박정수;이주열;강지훈;김기원;이광훈;이보화;이영백
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.182-182
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    • 2014
  • Multiferroic materials have attracted much attention due to their own fascinating fundamental physical properties and potential technological applications to magnetic/ferroelectric data storage systems, quantum electromagnets, spintronics, and sensor devices. Among single-phase multiferroic materials, $BiFeO_3$, in particular, has received considerable attention because the enhanced ferromagnetism was found by the Fe-site ion substitution with magnetic ions. The structural, the magnetic and the ferroelectric properties of polycrystalline $BiFe_{1-x}Ni_xO_3$ (x=0, 0.01, 0.02, 0.03 and 0.05), which were prepared by the solid-state reaction and the rapid-sintering method, have been investigated. The x-ray diffraction patterns reveal that all the samples are in single phase and show rhombohedral structure with R3c space group. The magnetic properties are enhanced according to the doping content. The Ni-doped $BiFeO_3$ samples exhibit lossy P-E loop due to the oxygen vacancy. The leakage current density of Ni-doped samples (x=0.01 and 0.02) is increased by four orders of magnitude. On the other hand, the x=0.03 and 0.05 samples show the relative reduction of the leakage current.

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Gettering을 이용한 태양전지용 고품위 실리콘 기판 제작 (Fabrication of high-quality silicon wafers by gettering process)

  • 박효민;탁성주;강민구;박성은;이승훈;김동환
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 추계학술대회 논문집
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    • pp.366-366
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    • 2009
  • 후면접합 태양전지는 상용 태양전지의 수평전류 손실(lateral current loss) 이 없으며, 전면전극에 의해 발생하는 그림자 손실(shading loss) 줄인 고효율 태양전지의 하나이다. 생성된 반송자가 후면에 위치한 전극에서 수집되기 때문에 효율향상을 위해서는 불순물에 의한 재결합을 줄이는 것이 중요하다. 따라서 Gettering 은 높은 소수반송자 수명(life-time)을 가지는 고품위 실리콘 기판은 고효율 실리콘태양전지 제작을 위한 중요 요소 기술이다. 본 연구에서는 n-type c-Si 기판을 이용한 고효율 실리콘 이종접합 태양전지제작을 위해 external gettering 공정을 이용하여 고품위 실리콘 기판을 제작하였다. POC13 doping process 의 온도, 시간을 변화시킴으로써 이에 따른 변화를 관찰하였다. 주사전자현미경(SEM)를 통해 etch pit 을 확인 했으며,Four point probe 를 통해 면저항을 측정, 인(P)의 농도를 계산 하였다. 계산된 면저항을 통해 인(P)의 확산 깊이를 계산하였다. Iodine passivation 된 시편을 Qusi-steady state photoconductance (QSSPC)를 이용하여 소수반송자 수명을 측정함으로써 gettering 에 의한 bulk lifetime 향상 효과를 관찰하였다.

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Comparison of Drain-Induced-Barrier-Lowering (DIBL) Effect by Different Drain Engineering

  • Choi, Byoung-Seon;Choi, Pyung-Ho;Choi, Byoung-Deog
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.342-343
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    • 2012
  • We studied the Drain-Induced-Barrier-Lowering (DIBL) effect by different drain engineering. One other drain engineering is symmetric source-drain n-channel MOSFETs (SSD NMOSs), the other drain engineering is asymmetric source-drain n-channel MOSFETs (ASD NMOSs). Devices were fabricated using state of art 40 nm dynamic-random-access-memory (DRAM) technology. These devices have different modes which are deep drain junction mode in SSD NMOSs and shallow drain junction mode in ASD NMOSs. The shallow drain junction mode means that drain is only Lightly-Doped-Drain (LDD). The deep drain junction mode means that drain have same process with source. The threshold voltage gap between low drain voltage ($V_D$=0.05V) and high drain voltage ($V_D$=3V) is 0.088V in shallow drain junction mode and 0.615V in deep drain junction mode at $0.16{\mu}m$ of gate length. The DIBL coefficients are 26.5 mV/V in shallow drain junction mode and 205.7 mV/V in deep drain junction mode. These experimental results present that DIBL effect is higher in deep drain junction mode than shallow drain junction mode. These results are caused that ASD NMOSs have low drain doping level and low lateral electric field.

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불소화된 $YBa_2Cu_3O_{7-y}$ 초전도체의 구조적, 전기적 성질에 관한 연구 (A study on the structural and electric properties of fluorinated $YBa_2Cu_3O_{7-y}$)

  • 김재욱;김채옥
    • E2M - 전기 전자와 첨단 소재
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    • 제9권4호
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    • pp.404-409
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    • 1996
  • The structural and electric properties of $Y_{1-x}$YbF$_{x}$Ba$_{2}$Cu$_{3}$O$_{7-y}$(x=0.0, 0.1, 0.2, 0.3, 0.4, 0.5 and 0.6) have been investigated by using XRD(X-ray diffraction), TMA(thennomechanical analysis), NMR(nuclear magnetic resonance) analysis and four probe method. $Y_{1-x}$YbF$_{x}$Ba$_{2}$Cu$_{3}$O$_{7-y}$ samples were prepared by conventional solid-state reaction method using $Y_{2}$O$_{3}$, BaCO$_{3}$, CuO and YbF$_{3}$ power. TMA and high temperature XRD results shows that orthorhombic to tetragonal phase transition occurs in the unfluorinated 1-2-3 sample while the phase change is not observed in the fluorinated 1-2-3 samples. Superconducting transition temperature(T$_{c}$) increases with increasing YbF$_{3}$ content ; T$_{c}$, of the sample reaching maximum of 102K for x=0.3, and then decreases with further increasing YbF$_{3}$ content. The structural analysis and T$_{c}$ results shows that the fluorine doping stabilize the orthorhombic phase, together with the increase in T$_{c}$.}$ c/.TEX> c/.

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