• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.348-354
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• 2011

Long-lasting brightness $Sr_{4}Al_{14}O_{25}$ : $Eu^{2+}$, $Dy^{3+}$, $Ag^{+}$ phosphor was synthesized by modified solid state reaction and its photoluminescence was investigated. $Sr(NO_3)_{2}$ and $Al(NO_3)_3{\cdot}9H_{2}O$ as starting materials, and $B_{2}O_{3}$ as a flux were mixed with $Eu_{2}O_{3}$ as an activator, $Dy_{2}O_{3}$ as a coactivator, and $AgNO_{3}$ as a charge compensator. The crystalline of target powder showed a single-phase $Sr_{4}Al_{14}O_{25}$ by the XRD characterization and the average particle size was about 20-30 ${\mu}m$ from the FE-SEM observation. $Ag^{+}$ ion doping effects (0-0.06 mol) on $Sr_{4}Al_{14}O_{25}:Eu^{2+},\;Dy^{3+},\;Ag^{+}$ phosphor were measured by photoluminescence spectrometer and luminescence meter. The of photoluminescence intensity of the $Sr_{3.64}Al_{14}O_{25}:Eu_{0.11},\;Dy_{0.22},\;Ag_{0.03}$ phosphor was higher than other compositions and afterglow brightness was 0.186 $cd/m^{2}$.

• Korean Journal of Materials Research
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• v.14 no.8
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• pp.595-599
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• 2004

We investigated the structural, electrical and magnetic properties of Mn-doped $CuAlO_2$ delafossite ceramics ($CuAl_{1-x}Mn_{x}O_2,\;0\le\;x\;\le0.05$), synthesized by solid-state reaction method in an air atmosphere at a sintering temperature of $1150^{\circ}C$. The solubility limit of Mn ions in delafossite $CuAlO_2$ was found to be as low as about 3 $mol\%$. Positive Hall coefficient and the temperature dependence of conductivity established that non-doped $CuAlO_2$ ceramic is a variable-range hopping p-type semiconductor. It was found that the Mn-doping in $CuAlO_2$ rapidly reduced the hole concentration and conductivity, indicating compensation of free holes. The analysis of the magnetization data provided an evidence that antiferromagnetic superexchange interaction is the dominant mechanism of the exchange coupling between Mn ions in $CuAl_{1-x}Mn_{x}O$ alloy, leading to an almost paramagnetic behavior in this alloy.

• Journal of the Korean Ceramic Society
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• v.55 no.3
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• pp.290-298
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• 2018

In order to investigate the effect of thickness on the dielectric and piezoelectric properties of (001) PMN-29PT single crystals, three different types of PMN-29PT samples were prepared using the solid-state single crystal growth (SSCG) method: high density crystal [99%], low density crystal [95%], and high density crystal doped with Mn [98.5%]. When their thickness decreased from 0.5 mm to 0.05 mm, their dielectric constant ($K_3{^T}$), piezoelectric constants ($d_{33}$ and $g_{33}$), and electromechanical coupling factor ($k_t$) decreased continuously. However, their dielectric loss (tan ${\delta}$) increased. The addition of Mn to PMN-PT induced an internal bias electric field ($E_I$), increased the coercive electric field ($E_C$), and prevented local depoling. Therefore, Mn-doped PMN-PT crystals show high stability as well as high performance, even in the form of very thin plates (< 0.2 mm), and thus are suitable for application to high frequency composites, medical ultrasound probes, non-destructive testing devices (NDT), and flexible devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.690-693
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• 2015

In this paper, in order to develop excellent Pb-free composition ceramics for ultrasonic sensor. The $SnO_2$-doped ($Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3$)(abbreviated as NKL-NST) ceramics have been synthesized using the ordinary solid state reaction method. The effect of $SnO_2$-doping on their dielectric and piezoelectric properties was investigated. The ceramics doped with 0 wt% $SnO_2$ have the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33}.g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=195[pC/N]$, $d_{33}.g_{33}=5.62pm^2/N.kp=0.40$, $density=4.436[g/cm^3]$. suitable for duplex ultrasonic sensor application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.115-115
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• 2009

Current sensing in power semiconductors involves sensing of over-current in order to protect the device from harsh conditions. This technique is one of the most important functions in stabilizing power semiconductor device modules. The Power MOSFET is very efficient method with low power consumption, fast sensing speed and accuracy. In this paper, we have analyzed the characteristics of proposed sense FET and optimized its electrical characteristics to apply conventional 40 V power MOSFET by numerical and simulation analysis. The proposed sense FET has the n-drift doping concentration $1.5\times10^{14}\;cm^{-3}$, size of $600\;{\mu}m^2$ with $4.5\;{\Omega}$, and off-state leakage current below $50\;{\mu}A$. We offer the layout of the proposed Power MOSFET to process actually. The offerd design and optimization methods are meaningful, which the methods can be applied to the power devices having various breakdown voltages for protection.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.497-497
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• 2013

Semiconducting amorphous InGaZnO (a-IGZO) has attracted significant research attention as improved deposition techniques have made it possible to make high-quality a-IGZO thin films. IGZO thin films have several advantages over thin film transistors (TFTs) based on other semiconducting channel layers.The electron mobility in IGZO devices is relatively high, exceeding amorphous Si (a-Si) by a factor of 10 and most organic devices by a factor of $10^2$. Moreover, in contrast to other amorphous semiconductors, highly conducting degenerate states can be obtained with IGZO through doping, yet such a state cannot be produced with a-Si. IGZO thin films are capable of mobilities greaterthan 10 $cm^2$/Vs (higher than a-Si:H), and are transparent at visible wavelengths. For oxide semiconductors, carrier concentrations can be controlled through oxygen vacancy concentration. Hence, adjusting the oxygen partial pressure during deposition and post-deposition processing provides an effective method of controlling oxygen concentration. In this study, we deposited IGZO thinfilms at optimized conditions and then analyzed the film's electrical properties, surface morphology, and crystal structure. Then, we explored how to generate IGZO thin films using DC magnetron sputtering. We also describe the construction and characteristics of a bottom-gate-type TFT, including the output and transfer curves and bias stress instability mechanism.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.3
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• pp.142-145
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• 2013

The upconversion (UC) luminescence of $Li^+/Er^{3+}/Yb^{3+}$ co-doped $CaWO_4$ phosphors and effects of $Yb^{3+}$ concentration are investigated in detail. Single crystallized $CaWO_4$ : $Li^+/Er^{3+}/Yb^{3+}$ phosphor can be obtained, co-doped up to 35.0/5.0/30.0 mol% ($Li^+/Er^{3+}/Yb^{3+}$) by solid-state reaction. Under 980 nm excitation, $CaWO_4$ : $Li^+/Er^{3+}/Yb^{3+}$ phosphor exhibited strong green UC emissions visible to the naked eye at 530 and 550 nm induced by the intra 4f transitions of $Er^{3+}$ ($^4H_{11/2}$, $^4S_{3/2}{\rightarrow}^4I_{15/2}$). The optimum doping concentrations of $Yb^{3+}$ that would result in the highest UC luminescence were determined, and a possible UC mechanism that depends on the pumping power is discussed in detail.

• Bulletin of the Korean Chemical Society
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• v.35 no.6
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• pp.1799-1805
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• 2014

In this article, we described about the preparation and electrochemical properties of a flexible energy storage system based on a plastic polyethylene terephthalate (PET) substrate. The PET treated with UV/ozone was fabricated with multilayer films composed of 30 polyaniline (PANi)/graphene oxide (GO) bilayers using layer-by-layer assembly of positively charged PANi and negatively charged GO. The conversion of GO to the reduced graphene oxide (RGO) in the multilayer film was achieved using hydroiodic acid vapor at $100^{\circ}C$, whereby PANi structure remained nearly unchanged except a little reduction of doping state. Cyclic voltammetry and charge/discharge curves of 30 PANi/RGO bilayers on PET substrate (shorten to PANi-$RGO_{30}$/PET) exhibited an excellent volumetric capacitance, good cycling stability, and rapid charge/discharge rates despite no use of any metal current collectors. The specific capacitance from charge/discharge curve of the PANi-$RGO_{30}$/PET electrode was found to be $529F/cm^3$ at a current density of $3A/cm^3$, which is one of the best values yet achieved among carbon-based materials including conducting polymers. Furthermore, the intrinsic electrical resistance of the PANi-$RGO_{30}$/PET electrodes varied within 20% range during 200 bending cycles at a fixed bend radius of 2.2 mm, indicating the increase in their flexibility by a factor of 225 compared with the ITO/PET electrode.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1017-1020
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• 2003

The effect of doping Gd, La for Y into $YVO_{4}:Eu^{3+}$ red phosphor on its photoluminescence(PL) intensity has been investigated. $YVO_{4}:$Eu-based phosphors were prepared by solid-state reaction at temperature above $1200^{\circ}C$. Under UV excitation(254, 365 nm), it was measured that $YVO_{4}:Eu^{3+}$ was superior to a commercial red phosphor (Y,Gd)$BO_{3}:Eu^{3+}$ in terms of PL intensity and CIE color coordinates. When La, Gd were doped into $YVO_{4}:Eu^{3+}$, the change in the structure of the host material was observed. In result, when the ($Y{1_x}La_{x})VO_{4}:Eu^{3+}$ phosphors were excited by 365 nm excitation, its PL intensity was improved up to about 30 % for the case of x being $0.4{\sim}0.6$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.562-566
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• 2001

The effects of MnO$_2$ addition on the properties in Pb(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ relaxor ferroelectrics were studied in the phase transition temperature range from -4$0^{\circ}C$ to 11$0^{\circ}C$. Specimens were made via solid state processing method. Dielectric properties, piezoelctric properties, electric-field-induced strain were examined to clarify the effect of MnO$_2$ addition in 0.9MN-0.1PT. As the amount of MnO$_2$ increases, the maximum dielectric constant and the dielectric loss decreases. Q$_{m}$ increased by increasing the doping contents of Mn. When 0.5wt% MnO$_2$ was doped, Q$_{m}$ increased from 95 to 480. The electric-filed-induced strain and polarization decreases as the amount of MnO$_2$ increases. From the experimental results, it was suggested that Mn behaves as an ferroelectric domain pinning element.ent.