• Electrical & Electronic Materials
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• v.10 no.7
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• pp.713-718
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• 1997

Polyaniline free standing films cast from N-methyl-2-pyrrolidinone(NMP) solution, camphorsulfonic acid(HCSA), dodecylbenzensulfonic acid(HDBSA), inorganic matter(carbon black, graphite) and metal(silver) were prepared by processings. The properties of these films such as crystallinity, near-infrared absorption spectra and conductivity were investigated. The HCSA and HDBSA doped polyaniline films cast from m-cresol and chloroform solvents showed the metallic property and high crystallinity, respectively. The value of conductivity in the HCSA doped polyaniline film obtained 180 S/cm. We have obtained the value of conductivity 200 S/cm in the metal(silver) doped polyaniline film, which is higher than that of the HCSA doped polyaniline film. The metal(silver) doped polyaniline film shows good properties as a electromagnetic shielding material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.573-576
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• 2001

In the research fields of energy storage, and more specifically of supplying high powers, electrochemical supercapacitor have been among the most studied systems for many years. One of the possible applications is in electric vehicles. We have been working on electronically conducting polymers for use as active materials for electrodes in supercapacitors. These polymers have the ability of doping and undoping with rather fast kinetics and have an excellent capacity for energy storage. polythiophene (Pth) and polyparafluorophenylthiophene (PFPT) have been chemically synthesized for use as active materials in supercapacitor electrodes. Electrochemical characterization has been performed by cyclic voltammetry and an electrode study has been achieved to get the maximun capacity out of the polymers and give good cyclability. specific capacity values of 7mAh/g and 40mAh/g were obtained for PFPT and polythiophene, respectively. Supercapacitors have been built to characterize this type of system. Energy storage levels of 260F/g were obtained with Pth and 110F/g with PFPT

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.114-118
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• 2006

We investigated the transient electroluminescence (EL) and modulation characteristics of red organic light-emitting diodes (OLEDs), which consist with 4-(dicyanomethylene)-2-i -propyl-6-(1,1,7,7-tetramethyljulolidyl-9-cnyl)-4H-pyran (DCJTI) and rubrene doped into tris(8-hydroxyquinoline)aluminum ($Alq_3$). The transient EL waveforms showed two components, the overshooting peak and constant component, indicating that the excess amount of accumulated charges simultaneously recombine at the onset moment. This overshooting effect reduced the rise time of transient EL and enhanced the optical output of OLEDs when the pulse voltage applied to the device. We demonstrated that the red OLEDs could be use for the high-speed switching application by driving at more than 100 MHz and transmitting the video signals utilized as the electro-optical conversion device

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.483-485
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• 2014

Transparent amorphous In-Si-O (ISO)/Ag/In-Si-O (ISO) has been reported for low emissivity (low-e) applications. Effective Si doping into the $In_2O_3$ matrix led to a completely amorphous ISO film as well as a low resistivity and a high optical transmittance. The optical and electrical performances were examined by measuring transmittance with a UV-VIS spectrophotometer and resistivity with a Hall effect measurement. Consequently, low-e glass with ISO/Ag/ISO showed a high transparency in the visible region and low emissivity in the infrared region, indicating that ISO is a promising amorphous transparent electrode for low-e glass.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.6
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• pp.527-530
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• 2007

[ $SrTiO_3$ ] red phosphors doped with Pr, Er and Al were synthesized by solid state reaction method. Three emission peaks in photoluminescence spectra of the $SrTiO_3:Eu$ Phosphors were observed at 583 nm, 610 nm and 685 nm. The emission peaks in the $SrTiO_3:Eu$ phosphors were associated with charge-transfer states. The decrease of photoluminescence intensity in $SrTiO_3:Eu,Al$ phosphors with doping Al ions was interpreted by the change of charge-transfer states.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.120-123
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• 2000

This paper reports a newly developed sol-gel process to synthesize dense YBCO thick films with $BaTiO_3$ additives using electrophoretic deposition and metal alkoxide sol/particle suspension, which we successfully produce dense $YBCO+BaTiO_3$ ceramics at a rather low temperature, compared with the sintering temperature used in conventional methods. The thick films of HTS were prepared by electrophoretic deposition, using pre-sintered powder with barium titanate addition in the form of $BaTi(OR)_6$ solution in suspension for electrophoresis. The conditions for applied voltage and deposition times for electrophoretic deposition of HTS thick films were studied in detail.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.125-130
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• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.113-115
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• 1994

We considered the ion and photo-induced properties as a function of wavelength by exposing the light over the band gap of a-Ag/a-$Se_{75}$$Ge_{25}$ and the low-energy defocused $Ga^{+}$ ion beam on Ag/a-$Se_{75}$$Ge_{25}$ thin film. This film acts as a negative resist for photo or ion beam lithography. We observed that the absorbance coefficient decreased with increasing the photo-exposing time and exposing the ion beam. The bandgap shifts toward longer wavelength called a "darkening effect" are observed in the films exposed to both photons and ions. We suggest that a primary step in the Ag layer and a secondary step is in a-$Se_{75}$$Ge_{25}$ film layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.246-247
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• 2007

(Ba,Sr,Ca)$TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-acetate, Sr-acetate and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectric properties were investigated for various $Dy_2O_3$ doping contents. As a result of thermal analysis, the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size of the specimens decreased with.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.189-190
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• 2007

본 논문에서는 칼코게나이드 박막의 Ag 포토 도핑시 기판의 변화에 따른 Ag 이온의 도핑 특성을 예측하고자 하였다. 도핑 특성은 Ag 이온의 도핑으로 인한 굴절률 변화를 이용하여 진폭혈 회절격자 효율을 측정하여 확인하였다. 시료는 5N의 순도를 갖는 Ge, Se, Ag 물질을 준비하였고, 이중 GeSe를 조성의 비에 맞추어서 석영관에 진공 봉입후 용융 혼합하고 급냉하여 비정질 빌크를 제작한다. 만들어진 비정질 벌크와 Ag를 열 증착법을 이용하여 기판에 올리는 방법으로 샘플을 제작한다. 제작된 샘플에 레이저와 몇몇 광학 소자로 구성된 흩로-리소그라피 장치를 이용하여 격자구조로 442nm 의 빛을 조사 시킨다. 결론으로는 기판은 칼코게나이드 박막에의 Ag 도핑에 영향을 미친다는 것을 확인하였다.