• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.152-157
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• 2001

For the fabrication of YBa$_2$Cu$_3$O$_{x}$ thick film using diffusion process between $Y_3$BaCuO$_{5}$ and BaO+CuO, each material was selected as substrate and doping material. In this paper, we investigated the characteristic of YBa$_2$Cu$_3$O$_{x}$ thick film due to both addition of CeO$_2$into substrate and initial particle size of doping material. Through X-ray diffraction patterns and SEM photographs, the variation of composition and thickness of the formed phase was observed. It was from the experiment obtained that the addition of CeO$_2$into $Y_2$BaCuO$_{5}$ substrate and the initial particle size of doping material play important part in promoting the reaction between substrate and doping material.aterial.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.239-242
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• 2000

To fabricate YBa$_2$Cu$_3$O$_{x}$ thick film using diffusion process, $Y_2$BaCuO$_{5}$ and BaO+CuO as the material of substrate and the doping material were selected. CeO$_2$ in the doping material was mixed. As another doping material, YBa$_2$Cu$_3$O$_{x}$ was prepared for the comparison with BaO+CuO doping material. Each doping material was patterned on $Y_2$BaCuO$_{5}$ substrate by the screen printing method and then was annealed above peritectic reaction temperature of YBCO with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2$BaCuO$_{5}$ and BaO+CuO, the YBa$_2$Cu$_3$O$_{x}$ phase was formed. With an amout of addition of CeO$_2$, the thickness of a formed YBa$_2$Cu$_3$O$_{x}$ decreased. x/ decreased.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.238.2-238.2
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• 2011

Organic thin film transistors (OTFTs) have been attracting considerable attention because of their potential use in low-cost, large area, electronic devices such as flexible displays, biochemical sensors, and smart cards. In past several years, gold/pentacene has been frequently used in OTFTs because of the high mobility of pentacene and the high work function of gold. To improve the performance of the OTFTs contact area doping of pentacene with p-doping materials are well known. In this work we demonstrated selectively contact area doping of pentacene with Iodine vapor. For effective doping elevated pentacene layer under the source-drain area was deposited and exposed to Iodine vapor. We got better electrical performance for elevated pentacene structure rather than planer structure with relatively high field-effect mobility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.198-203
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• 2000

This paper investigated the effects of doping elements on the Bi-Sr-Ca-Cu-O ceramics. The doping elements can be classified into four groups depending on their superconducting characteristics in the Bi-Sr-Ca-Cu-O structure. The first group of doping elements(Co, Fe, Ni and Zn) substitute into the copper site and can reduce the critical temperatures of the 2223 and 2212 phases. The second group of doping elements(Y and La) substitute into the Ca site and cause the disappearance of the 2223 phase and increase the critical temperatures in the 2212 phase. The third group of doping elements(P and K) have a tendency to decompose the superconducting phase and reduce the optimal sintering temperature. The fourth group of doping elements(B, Si, Sn and Ba) almost unaffected the superconductivity of the 2223 and 2212 phase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.55-59
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• 1993

In this study, we developed new process for doping poly-Si film. Sb(antimony) thin film was used as doping source. Sb was evaporated on poly-Si film deposited by LPCVD fallowed by annealing. We investigate sheet resistance variation with annealing temperature and time. Finally we adapted this process to poly-Si TFT fabrication.

• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.249-254
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• 2008

Ag doping effect on $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ cathode material was studied. Specially, we focused on rate performance of Ag doped samples. The $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ powder was prepared by simple combustion method and the Ag was doped using $AgNO_3$ during gelation process. Based on X-ray diffraction analysis, there was no structural change by Ag doping, but the 'metallic' form of Ag was included in the doped powder. Both bare and Ag 1 wt.% doped sample showed similar discharge capacity of 242 mAh/g at 0.2C rate. However, as the increase of charge-discharge rate to 3C, Ag 1 wt.% doped sample showed higher discharge capacity (172 mAh/g) and better cyclic performance than those of bare sample. The discharge capacity of Ag 5 wt.% doped sample was relatively low at all rate condition. However it displayed better rate performance than other samples.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1054-1056
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• 2002

High temperature Kermal diffusion from $POCl_3$ source usually used for conventional process through put of a cell manufacturing line and potentially reduce cell efficiency through bulk like time degradation. To fabricate high efficiency solar cells with minimal thermal processing, spin-on-doping(SOD) technique can be employed to emitter diffusion of a silicon solar cell. A technique is presented to emitter doping of a mono-crystalline solar cell using spin-on doping (SOD). Moreover it is shown that the sheet resistance variation with RTA temperature and time fer mono-crystalline and multi-crystalline silicon samples. This novel SOD technique was successfully used to produces 11.3% efficiency l04mm by 104mm size mono-crystalline silicon solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.217-220
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• 1999

We investigated the effects of doping elements on the Bi-Sr-Ca-Cu-0 ceramics. The doping elements can be classified into groups depending on their supeconducting characteristics in the Bi -Sr-Ca-Cu -O structure. The first group of doping elements(Co, Fe, Ni and Zn) substitute into the copper site and can reduce the critical temperatures of the 2223 and 2212 phases. The second group of doping elements(Y and La) substitute into the Ca site and cause the disappearance of the 2223 phase and increase the critical temperatures in the 2212 phase.

• Journal of Industrial and Engineering Chemistry
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• 제68권
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• pp.124-128
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• 2018

Titanium doping is employed to enhance the structural strength of a high-Ni layered cathode material in lithium ion batteries during high temperature cycling. After Ti-doping, the external morphology remains similar, but the lattice parameters of the layered structure are slightly shifted toward larger values. With application of the prepared materials as cathodes in lithium-ion batteries, the initial capacities are similar but the cycling performance at $25^{\circ}C$ is enhanced by Ti-doping. During high temperature cycling at $60^{\circ}C$, furthermore, highly improved capacity retention is achieved with the Ti-doped material (95% of initial capacity at 50th cycles), while cycle fading is accelerated with the bare electrode. This enhancement is attributed to better retention of the compressive strength of the particles and retarded crack formation within the particles. In addition, impedance increase is reduced in the Ti-doped electrode, which is attributed to an improvement in the structural strength of the high-Ni cathode material with Ti-doping.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.69-69
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• 2009

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sh-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sh-doped Ge-Se-Te thin films.