• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.32 no.2
• /
• pp.55-60
• /
• 2022

In this study, a heat treatment experiment was conducted to select a new melt composition that can easily control the unintentionally doped nitrogen (N-UID) without degrading the SiC single crystal quality during TSSG process. The experiment was carried out for about 2 hours at a temperature of 1900℃ under Ar atmosphere. The used melt composition is based on either Si-Ti 10 at% or Si-Cr 30 at%, and also Co or Sc transition metals, which are effective for carbon solubility, were added at 3 at%, respectively. After the experiment, the crucible was cross-sectionally cut, and evaluated the Si-C reaction layer on the crucible-melt interface. As a result, with Sc addition, Si-C reaction layers uniformly occurred with a Si-infiltrated layer (~550 ㎛) and a SiC interlayer (~23 ㎛). This result represented that the addition of Sc is an effective transition metal with high carbon solubility and can feed carbon sources into the melt homogeneously. In addition, Sc is well known to have low reactivity energy with nitrogen compared to other transition metals. Therefore, we expect that both growth rate and Nitrogen UID can be controlled by Si-Sc based melt in the TSSG process.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1996.06a
• /
• pp.75-87
• /
• 1996

This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

• Journal of the Microelectronics and Packaging Society
• /
• v.29 no.4
• /
• pp.63-69
• /
• 2022

Vanadium dioxide shows a unique and interesting property of metal-insulator transition, which has attracted great attention from the viewpoints of fundamental materials science and industrial applications. In this study, the effect of Mg and W addition on the metal-insulator transition of VO₂ were investigated for the bulk materials that are prepared by spark plasma sintering. The X-ray diffraction analysis of the sintered specimens revealed that the lattice parameters barely change, and the secondary phases are present. The transition temperature of MIT appears in the range of 64.2-64.6℃, regardless of the impurity element and content. On the other hand, the addition of Mg and W alters the electrical conductivity, i.e., the electrical conductivity increases by a factor of up to 2.4 or decrease by a factor of up to 57.4 depending on the impurity type and its content. The thermal conductivity showed the values of 1.8~2.5 W/m·K below the transition temperature, and the values of 1.9~2.8 W/m·K above the transition temperature. These changes in electrical and thermal conductivities can be attributed to the combination of the change in charge carrier density, the impurities as scattering centers, and the change in microstructures.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.284-284
• /
• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.

• Journal of Korean Society of Environmental Engineers
• /
• v.33 no.12
• /
• pp.907-912
• /
• 2011

Development of visible light responsive photocatalysts is a promising research area to facilitate utilization of solar energy for hydrogen production via photocatalytic water splitting. In this study two groups of samples, nitrogen (N)-doped niobium pentoxide ($Nb_2O_5$) and titanium dioxide ($TiO_2$) ($Nb_2O_5-N$, $HNb_3O_8-N$, $TiO_2-N$) and N-undoped ones ($Nb_2O_5$ and $TiO_2$) were tested. In order to utilize visible light, nitrogen atoms were doped in selected photocatalysts by using urea. A shift of the absorption edges of the Ndoped samples in the visible light region was observed. Under visible light irradiation, N-doped samples were more prominent photocatalytic activities than the N-undoped samples. Specifically, 99.7% of rhodamine B (RhB) was degraded after 60 minutes of visible light irradiation with $TiO_2-N$. Since $TiO_2-N$ shows the highest activity of RhB degradation, it was supposed to generate the highest current response. However, $HNb_3O_8-N$ showed the highest current response ($63.7mA/cm^2$) than $TiO_2-N$. More interestingly, when we compare the hydrogen production, $Nb_2O_5-N$ produced $19.4{\mu}mol/h$ of hydrogen.

• Journal of the Korean Chemical Society
• /
• v.42 no.6
• /
• pp.618-628
• /
• 1998

Pure CaO, Mn-doped CaO, Mn/CaO, and K/CaO catalysts were prepared and tested as catalysts for the oxidative coupling of methane in the temperature range of 600 to 800$^{\circ}C$ to investigate the effects of Mn- and K-addition on the catalytic activity of calcium oxide. To characterize the catalysts, X-ray powder diffraction(XRD), XPS, SEM, DSC, and TG analyses were performed. The catalytic reaction was carried out in a single-pass flow reactor using on-line gas chromatography system. Normalized reaction conditions were generally $p(CH_4)/p(O_2)=250$ Torr/50 Torr, total feed flow rate=30 mL/min, and 1 atm of total pressure with He being used as diluent gas. Among the catalysts tested, 6.3 mol% Mn-doped CaO catalyst showed the best $C_2$ yield of 8.0% with a selectivity of 43.2% at 775$^{\circ}C$. The $C_2$ selectivity increased on lightly doped CaO catalysts, while decreased on heavily doped CaO([Mn] > 6.3 mol%) catalysts. 6 wt.% Mn/CaO and 6 wt.% K/CaO catalysts showed the $C_2$ selectivities of 13.2% and 30.9%, respectively, for the reaction. Electrical conductivities of CaO and Mn-doped CaO were measured in the temperature range of 500 to 1000$^{\circ}C$ at Po2's of $10^{-3}\; to\;10^{-1}\;atm.$ The electrical conductivity was decreased with Mn-doping and increased with increasing $P0_2$in the range of $10^{-3}\;to\;10^{-1}\;atm,$ indicating the specimens to be p-type semiconductors. It was suggested that the interstitial oxygen ions formed near the surface can activate methane and the formation of interstitial oxygen ions was discussed on the basis of solid-state chemistry.

• Journal of the Korean Chemical Society
• /
• v.39 no.3
• /
• pp.163-175
• /
• 1995

Metal free phthalocyanine($H_2Pc$) partially doped with iodine, $H_2Pc(I)x$, has been made to improve photosensitizing efficiency of ZnO/$H_2Pc$. The content of iodine dopant level(x) for $H_2Pc(I)x$ upon $H_2Pc$ polymorphs was characterized as ${\chi}-H_2Pc(I)_{0.92}$ and ${\beta}-H_2Pc(I)_{0.96}$ by elemental analysis. Characterization of iodine-oxidized $H_2Pc$ were investigated by TGA (thermogravimetric analysis), UV-Vis, FT-IR, Raman and ESR (electron spin resonance) spectrum, and the adsorption properties of $H_2Pc(I)x$ on ZnO were characterized by means of Raman and ESR studies. TGA for $H_2Pc(I)x$ showed a complete loss of iodine at approximately 265$^{\circ}C$ and the Raman spectrum of $H_2Pc(I)x$ and ZnO/$H_2Pc(I)x$ at 514.5 nm showed characteristic $I_3^-$ patterns in the frequency region 90∼550 $cm^{-1}$. ZnO/$H_2Pc(I)x$ exhibited a very intense and narrow ESR signal at $g=2.0025{\pm}0.0005$ compared to $H_2Pc$/ZnO. Iodine doped ZnO/$H_2Pc(I)x$ showed a better photosensitivity compared to iodine undoped ZnO/$H_2Pc$. That is, the surface photovoltage of ${\chi}-H_2Pc(I)_{0.92}$/ZnO was approximately 31 times greater than that of ZnO/${\chi}-H_2Pc$ and ZnO/${\beta}-H_2Pc(I)_{0.96}$ was 5 times more efficient than ZnO/${\beta}-H_2Pc$ at 670 nm. And the dependence of photosensitizing effect upon $H_2Pc$ polymorphs was exhibited that the surface photovoltage of ZnO/${\chi}-H_2Pc(I)_{0.92}$ was approximately 5 times greater than ZnO/${\beta}-H_2Pc(I)_{0.96}$ at 670 nm. Therefore Iodine doping of H_2Pc$ resulted in increase in photoconductivity of $H_2Pc$ and photovoltaic effect of ZnO/$H_2Pc$ in the visible region.

• The Journal of Korean Academy of Prosthodontics
• /
• v.58 no.1
• /
• pp.14-22
• /
• 2020

Purpose: The aim of this study is to evaluate the effectiveness of MnO₂-diatom microbubbler (DM) on the surface of prosthetic materials as a mouthwash by comparing the biofilm removal effect with those previously used as a mouthwash in dental clinic. Materials and methods: DM was fabricated by doping manganese dioxide nanosheets to the diatom cylinder surface. Scanning electron microscopy (SEM) was used to observe the morphology of DM and to analyze the composition of doped MnO₂. Stereomicroscope was used to observe the reaction of DM in 3% hydrogen peroxide. Non-precious metal alloys, zirconia and resin specimens were prepared to evaluate the effect of biofilm removal on the surface of prosthetic materials. And then Streptococcus mutans and Porphyromonas gingivalis biofilms were formed on the specimens. When 3% hydrogen peroxide solution and DM were treated on the biofilms, the decontamination effect was compared with chlorhexidine gluconate and 3% hydrogen peroxide solution by crystal violet staining. Results: Manganese dioxide was found on the surface of the diatom cylinder, and it was found to produce bubble of oxygen gas when added to 3% hydrogen peroxide. For all materials used in the experiments, biofilms of the DM-treated groups got effectively removed compared to the groups used with chlorhexidine gluconate or 3% hydrogen peroxide alone. Conclusion: MnO₂-diatom microbubbler can remove bacterial membranes on the surface of prosthetic materials more effectively than conventional mouthwashes.

• Applied Chemistry for Engineering
• /
• v.19 no.5
• /
• pp.477-483
• /
• 2008

$La_{0.7}Sr_{0.3}Co_{0.2}Fe_{0.8}O_{3-{\delta}$ oxide was synthesized by a citrate method and a typical dense membrane of perovskite oxide has been prepared using as-prepared powder by pressing and sintering at $1300^{\circ}C$. Precursor of $La_{0.7}Sr_{0.3}Co_{0.2}Fe_{0.8}O_{3-{\delta}$ prepared by citrate method was investigated by TGA and XRD. Metal-citrate complex in precursor was decomposed into perovskite oxide in the temperature range of $260{\sim}410^{\circ}C$ but XRD results showed $SrCO_3$ existed as impurity at less than $900^{\circ}C$. Electrical conductivity of membrane increased with increasing temperature but then decreased over $700^{\circ}C$ in air atmosphere ($Po_2=0.2atm$) and $600^{\circ}C$ in He atmosphere ($Po_2=0.01atm$) respectively due to oxygen loss from the crystal lattice. The oxygen permeation flux increased with increasing temperature and maximum oxygen permeation flux of $La_{0.7}Sr_{0.3}Co_{0.2}Fe_{0.8}O_{3-{\delta}$ membrane with 1.6 mm thickness was about $0.31cm^3/cm^2{\cdot}min$ at $950^{\circ}C$. The activation energy for oxygen permeation was 88.4 kJ/mol in the temperature range of $750{\sim}950^{\circ}C$. Perovskite structure of membrane was not changed after permeation test of 40 h and the membrane was stable without secondary phase change with 0.3 mol Sr addition.

• Journal of the Korean Magnetics Society
• /
• v.13 no.6
• /
• pp.237-242
• /
• 2003

$Ti_{1-x}$$^{57}$ F $e_{x}$ $O_2$(0.0$\leq$x$\leq$0.07) compounds were fabricated using the sol-gel method, and the crystal structure and magnetic properties were investigated as a function of doped $^{57}$ Fe concentration. X-ray diffraction patterns showed a pure anatase single phase, without any segregation of Fe into particulate. With varying $^{57}$ Fe concentration, we could observe unusual magnetic phenomena in these materials. Doping $^{57}$ Fe into the Ti $O_2$ nonmagnetic semiconductor formed magnetic properties, but the gradual increase of $^{57}$ Fe concentration decreased rapidly the ferromagnetic properties rather than enhanced the ferromagnetic properties. Obvious ferromagnetic behavior was shown for the samples with x$\leq$0.01, while paramagnetic behavior was shown for the sample with x$\geq$0.03. These phenomena could be verified using Mossbauer measurement. Separation of the ferromagnetic phase (sextet) and the paramagnetic phase (doublet) of the samples with different $^{57}$ Fe concentration was characterized. Samples with x$\leq$0.01 have sextet and doublet simultaneously, but samples with x$\geq$0.03 have only doublet at room temperature. This indicates that the sample x$\leq$0.01 have the ferromagnetic phase at room temperature. This result corresponded with the M-H loops referenced above and reveals an interesting feature that there is a critical limit of $^{57}$ Fe concentration (0.01$\leq$0.01 samples was fundamentally attributable to the paramagnetic phase as well as the ferromagnetic phase.e.