• 한국세라믹학회지
• /
• 제38권2호
• /
• pp.117-121
• /
• 2001

본 연구에서는 Zr $O_2$첨가가 Ba(Zn$_{1}$3/Ta$_{2}$3/) $O_3$(BZT)세라믹의 구조와 고주파 유전특성에 미치는 영향을 조사하였다. 모든 시료에서 $Ba_{5}$Ta$_4$ $O_{15}$ 이차상이 발견되었으며 Zr $O_2$의 첨가량이 증가하면 $Ba_{5}$Ta$_4$ $O_{15}$ 상의 양은 감소하였다. 반면에 Zr $O_2$의 첨가량이 1.5 mol% 이상인 시료에서는 $Ba_{0.5}$Ta $O_3$상이 발견되었다. BZT의 입자 크기는 약 1$mu extrm{m}$ 정도였지만, Zr $O_2$를 첨가하면 입자 크기가 증가하였다. SEM 및 TEM 분석에 의하여 Zr $O_2$가 첨가되면 액상이 존재하는 것을 알 수 있었으며, 이로 인하여 입자가 성장되는 것이 발견되었다. 시편의 밀도는 소량의 Zr $O_2$를 첨가하면 증가하지만 Zr $O_2$첨가량이 증가하면 감소하였다. 유전율은 모든 시료가 27에서 30 사이의 값을 가지고 있었다. 공진주파수 온도계수는 소량의 Zr $O_2$을 첨가하였을 때는 변화하지 않았지만 첨가량이 2.5 mol% 이상에서는 증가하였다. Q$\times$f 값은 Zr $O_2$을 첨가하면 증가하였고, 입자 성장이 완료되는 조성에서 최대 값을 보였다. 본 연구에서는 Zr $O_2$를 2.0 mol% 첨가하고 15$50^{\circ}C$에서 10시간 소결한 시료에서 최대의 Q$\times$f 값(164,000)을 얻을 수 있었다.다.다.

• Nuclear Engineering and Technology
• /
• 제54권7호
• /
• pp.2427-2434
• /
• 2022

Series of unequal quantity Nd/Ce co-doped ceramic nuclear waste forms, (Gd, Nd)₂(Zr, Ce)₂O₇, were prepared to tailor its ordered pyrochlore or disordered fluorite structure. The phase transition, microtopography, and elemental composition of the ceramic samples were systematically investigated, especially the effect of order-disorder structure on the chemical stability. It was confirmed that unequal quantity of Nd/Ce could synchronously replace the Gd/Zr-sites of Gd₂Zr₂O₇. And the phase transition of order-disorder structure could be successfully tailored by regulating the average cationic radius ratio of (Gd, Nd)₂(Zr, Ce)₂O₇ series. The elements of Gd, Nd, Zr, and Ce are uniformly distributed in the ordered or disordered structures. The MCC-1 leaching results showed that (Gd, Nd)₂(Zr, Ce)₂O₇ pyrochlore ceramic nuclear waste forms had excellent chemical stability, whose elements' normalized leaching rates were as low as 10^-4-10^-7 g·m^-2·d^-1 after 7 days. In particular, the chemical stability of disordered structure was superior to that of ordered structure. It was proposed that the force constant and the closest packing were changed with the structure transformation resulting the chemical stability difference.

• 한국세라믹학회지
• /
• 제36권10호
• /
• pp.1108-1114
• /
• 1999

Microstructure and electrical properties of ZnO-doped (0-5 mol%) 0.05 Pb(Mn1/3Sb2/3)O3-0.95 PZT ceramics were investigated. Sintering temperature was decreased to 100$0^{\circ}C$ due to eutetic reaction between PbO and ZnO. Grain-size increased up to adding 1mol% ZnO and then decreased. Compositions of grain and grain-boundary were investigated by WDS. Lattice parameter was decreased with ZnO addition. Density increased with ZnO addition and reached to the maximum of 7.84(g/cm2) at 2 mol% ZnO. The effect of ZnO on electrical properties of PMS-PZT was investigated. At 3mol% ZnO addition electromechanical coupling factor(kp) was about 50% and relative dielectric constant($\varepsilon$33/$\varepsilon$0) was 997 Mechanical quality factor(Qm) decreased with ZnO addition. Lattice parameters and tetragonality(c/a) were measured to investigate relationship between the electric properties and substitution of Zn2+. At 3 mol% ZnO tetragonality was maximiged at c/a=1.0035 Curie temperature (Tc) decreased slightly with ZnO addition.

• 한국세라믹학회지
• /
• 제23권1호
• /
• pp.21-26
• /
• 1986

By the floating zone method with infrared radiation convergence type heater homogeneously $Cr^{3+}$ doped alu-mina single crystal was obtained. And sizx {1010} facets appeared at the surface of [0001] grown crystals. $ZrO_2$ and $HfO_2$ precipitated as secondary phase and were not doped in the crystals. We found that the dist-ribution of the secondary phase which was mainly located at the surface and the peripheral region was closely related to the flow pattern of melt zone.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.140-140
• /
• 2009

The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

• 한국세라믹학회지
• /
• 제29권5호
• /
• pp.341-346
• /
• 1992

The effects of CaO addition on the low temperature degradation behavior of 2.5Y-TZP ceramics were investigated. Y2O3-CaO-ZrO2 ceramics were prepared from the commercial Y-TZP powder added within 1 mol% of CaO. Fully tetragonal phase could be obtained at each composition under sintering condition of 1500$^{\circ}C$ for 1 hour. As the amount of CaO increased, grain size was decreased. From the result of heat treatment at 200$^{\circ}C$, volume fraction of monoclinic phase formed on the surface of each specimen was decreased with higher CaO amount. Stability of tetragonal ZrO2 phase for low temperature heat treatment was increased by CaO addition without the degradation of mechanical properties.

• 한국결정성장학회지
• /
• 제18권1호
• /
• pp.22-26
• /
• 2008

[ $CaCO_3$ ]와 $ZrO_2$를 모체결정으로 하고 Pr을 부활제로, 융제로 $B_2O_3$을 사용하였으며 고상반응법으로 합성하여 $CaZrO_3$ : Pr 적색 축광성 형광체를 제조하였다. XRD 분석을 통하여 시료의 결정상을 확인하였고, PL 검사를 통하여 $480{\sim}570nm$영역과 $590{\sim}700nm$ 영역의 발광 스펙트럼을 관찰하였다. 융제로서 $B_2O_3$을 각각 1%, 5%, 10%를 첨가하여 고상반응법으로 합성하였을 때, 494 nm 에서 발광은 $B_2O_3$의 농도가 1%일 때 가장 높은 강도를 나타냈다. 적색을 나타내는 620 nm에서의 Peak는 $B_2O_3$의 농도가 10%일 때 가장 높은 강도를 나타내었다.

• 한국결정성장학회지
• /
• 제13권6호
• /
• pp.267-271
• /
• 2003

In this work, chemical solution derived Ca-doped zirconia fiber has been prepared by using calcium- and zirconium-naphthenate. Fibrous $ZrO_2$-CaO was drawn from a sticky mixture. Dried gel fibers were finally annealed at $1000^{\circ}C$ for 1 h in argon. 91 mol%$ZrO_2$-9 mol%CaO fiber consisted of tetragonal, monoclinic and $CaZrO_3$ phases after annealing at $1000^{\circ}C$. On the other hand, samples annealed at $500^{\circ}C$ consisted of almost tetragonal single phase. Homogeneous fibers surface at $500^{\circ}C$ became rougher after $1000^{\circ}C$-annealing. The sample annealed at $1000^{\circ}C$ with relatively rough surface structure showed a high Calcium phocphate forming ability.

• 한국재료학회지
• /
• 제25권2호
• /
• pp.107-112
• /
• 2015

The oxide films formed on etched aluminum foils play an important role as dielectric layers in aluminum electrolytic capacitors. $Y_2O_3$-doped $ZrO_2$ (YZ) films were coated on the etched aluminum foils by sol-gel dip coating, and the electrical properties of YZ-coated Al foils were characterized. YZ films annealed at $450^{\circ}C$ were crystallized into a cubic phase, and as the $Y_2O_3$ doping content increased, the unit cell of $ZrO_2$ expanded and the grain size decreased. The etch pits of Al foils were filled by YZ sol when it dried at atmospheric pressure after repeating for several times, but this step could essentially be avoided when being dried in a vacuum. YZ-coated foils indicated that the specific capacitance and dissipation factor were $2-2.5{\mu}F/cm^2$ and 2-4 at 1 kHz, respectively, and the leakage current and withstanding voltage of films approximately 200 nm thick were $5{\times}10^{-4}A$ at 21 V and 22 V, respectively. After being anodized at 500 V, the foils exhibited a specific capacitance and dissipation factor of $0.6-0.7{\mu}F/cm^2$ and 0.1-0.2, respectively, at 1 kHz, while the leakage current and withstanding voltage were $2{\times}10^{-4}-3{\times}10^{-5}A$ at 400 V and 420-450 V, respectively. This suggests that YZ film is a promising dielectric that can be used in high voltage Al electrolytic capacitors.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1994년도 하계학술대회 논문집 C
• /
• pp.1496-1498
• /
• 1994

In this study, x PSN - y PT - z PZ ceramics doped with w $MnO_2$ were fabricated by the mixed oxide method at 1250 [$^{\circ}C$] for 2[hr] and then the dielectric and pyroelectric properties were investigated. In the 0.05 PSN - 0.4 PT - 0.55 PZ specimen with 0.5[wt%] $MnO_2$ the Pyroelectrics coefficient was $6.6{\times}10^{-8}[C/cm^2.^{\circ}C]$, respectibly.