• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.296-296
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• 2016

ITO films doped with a small amount of high-permittivity materials not only retain the basic properties of ITO films but also improve some of their properties. We report the highly conductive and transparent (ITO:Zr) films with various substrate (RT to 300oC) temperatures on glass substrate for the HIT solar cell applications. We observed a decrease in sheet resistance from 36 to $11.8{\Omega}/{\Box}$ with the increasing substrate temperature from RT to 300oC, respectively. The ITO:Zr films showed also lowest resistivity of $1.38{\times}10-4{\Omega}.cm$ and high mobility of 42.37cm-3, respectively. The surface and grain boundaries are improved with the increase of substrate temperature as shown by SEM and AFM surface morphologies. The highly conductive and transparent ITO:Zr films were employed as front electrode in HIT solar cell and the best performance of device was found to be Voc = 710 mV, Jsc = 33.70 mA/cm2, FF = 0.742, ${\eta}=17.76%$ at the substrate temperature of $200^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.6
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• pp.886-894
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• 1990

Sinterbility, microstructure, mechenical and electrical properties of yttriastabilized zirkconiz (92 mole % ZrO2 + 8 mole % Y2O3) doped with 0.5 mole % SiO2 and 0-2.O mole% Al2O3 were studied as a functin of Al2O3 addition. Sintered density increased with increasing Al2O3 addition up to o.5 mole%but decreased up to 1.0mole% Al2O3. Vickers hardness is proportional to sintered density. The specimen added 0.5mole% Al2O3 and 0.5mole% SiO2 exhibited a maximum conductivity. And the specimen added 0.5 mole % Al2O3 and 0.5 mole% SiO2 was measured a maximum electromotive force for a characteristics of oxyzen partial pressure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.356-360
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• 2017

We investigated the phase evolution, microstructure, and microwave dielectric properties of Na- and Zr-doped $Ba(Mg_{0.5}W_{0.5})O_3$ [i.e., ($Ba_{1-2x}Na_{2x})(Mg_{0.5-x}Zr_xW_{0.5})O_3$] ceramics. $BaWO_4$ as a secondary phase was observed in all compositions, and it increased as the dopant concentration increased. All specimens revealed a dense microstructure. For the composition of x=0.01, polyhedral grains were observed. As the dopant concentration increased, the densification and the grain growth were promoted by a liquid phase. The quality factor($Q{\times}f_0$) decreased remarkably, whereas the dielectric constant (${\varepsilon}_r$) tended to decrease as the dopant concentration increased. The dielectric constant, quality factor, and temperature coefficient of the resonant frequency of the composition of x=0.01 sintered at $1,700^{\circ}C$ for 1 h were 18.6, 216,275 GHz, and $-22.0ppm/^{\circ}C$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.108-108
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• 2000

급증하는 무선통신 정보수요는 특히, 고주파대역 (300NHz-300GHz)에서 사용되는 공진기, 필터, 발진기 등과 같은 소자의 품질향상을 요구하고 있다. 고주파용 유전체 중 ZrTiO4 는 $\alpha$-PbO2 계열의 사방정구조를 갖고 있는 유전체로서 높은 유전율 ($\varepsilon$=40)과 높은 품질계수 (Q=1/tan$\delta$=4700 at 7GHz)를 갖고 있고, Sn 첨가시 0ppm/$^{\circ}C$의 공진주파수 온도계수를 얻을 수 있다고 보고되어 있다. 본 연구에서는 약 110$0^{\circ}C$ 이상에서 안정한 상으로 존재하는 ZrTiO4를 저온에서 증착하여 준안정한 상태로 결정화되게 한후, 유전손실 (tan$\delta$)과 유전율($\varepsilon$)을 측정하였다. 또한 증착온도와 열처리과정에 따른 박막의 us형 (Strain) 정도의 변화를 X-선 회절결과로부터 분석하였으며 이를 측정된 유전특성 값과 비교하였다. ZrTiO4 박막은 DC magnetron reactive sputter로 Zr과 Ti 타겟으로부터 high phosphorous doped Si (100) 기판위에 증착하였다. 압력은 4mTorr로 유지하고 박막의 화학양론적 조성비를 맞추기 위해 각 타겟에 가해지는 power는 Zr/Ti=500W/650W로 고정하고, 반응가스의 비율을 Ar/O2=17sccm/3.5sccm으로 유지하여 박막내에 인입되는 산소량을 제어하였다. 증착 직후와 열처리 후의 박막특성을 비교하기 위해 증착온도를 상온에서부터 $600^{\circ}C$까지 변호시키고 증착후 각각의 시편을 80$0^{\circ}C$ 산소분위기에서 2시간동안 열처리하여 시편을 준비하였다. 박막의 상형성 여부와 결정성변화는 $ heta$-2$\theta$X-선 회절법을 사용하여 조사하였고, EPMA를 이용하여 박막의 조성을 확인하였다. 유전특성의 측정을 위해 백금 상부전극을 증착한 후, impedance analyzer를 이용하여 100kHz 영역에서의 유전손실을 측정하고, 측정된 정전용량과 박막의 두께로부터 유전율을 계산하였다. ZrTiO4 박막은 증착온도 20$0^{\circ}C$ 이상에서 결정성을 보이기 시작했으며, 열처리 이후에는 상온에서 비정질이었던 시편이 $650^{\circ}C$ 이상의 온도에서 결정화되기 시작하였다. 증착온도에 따라 유전손실은 0.038에서 0.017 정도로 감소하는 경향을 나타냈으며, 각각 열처리에 의해서 0.034, 0.005 정도로 다시 감소하였다. 박막의 유전율은 약 35 정도의 값을 나타내었으며 X-선 회절 data로부터 분석한 박막의 변형은 증온도에 따라 7.2%에서 0.04%로 감소하였고 이 이경향은 유전손실은 감소경향과 일치하였다.

• Journal of Hydrogen and New Energy
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• v.22 no.5
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• pp.649-655
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• 2011

Methane direct cracking can be utilized to produce $CO_x$ and $NO_x$-free hydrogen for PEM fuel cells, oil refineries, ammonia and methanol production. We present the results of a systematic study of methane direct cracking using a mixed conducting oxide, Y-doped $BaZrO_3$ ($BaZr_{0.85}Y_{0.15}O_3$), membrane. In this paper, dense $BaZr_{0.85}Y_{0.15}O_3$ membrane with disk shape was successfully sintered at $1400^{\circ}C$ with a relative density of more 93% via addition of 1 wt% ZnO. The ($BaZr_{0.85}Y_{0.15}O_3$) membrane is covered with Pd as catalyst for methane decomposition with an DC magnetron sputtering method. Reaction temperature was $800^{\circ}C$ and high purity methane as reactant was employed to membrane side with 1.5 bar pressure. The $H_2$ produced by the reaction was transported through mixed conducting oxide membrane to the outer side. In addition, it was observed that the carbon, by-product, after methane direct cracking was deposited on the Pd/ZnO-$BaZr_{0.85}Y_{0.15}O_3$ membrane. The produced carbon has a shape of sphere and nanosheet, and a particle size of 80 to 100 nm.

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.443-448
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• 1988

Colored Cubic Zircona(CCZ) single crystals were grown by the skull melting method. The grown crystals were doped with up to 0.1wt% transition (Cu, Ni, Co, Ti, Fe, Mo, Cr, V, Mn) metal ions on ZrO2-Y2O3(9.5~10mol%) and their Optical transmission spectra(λ=300~800nm)data were obtained. Various colors were pronounced due to dopant effects in the grown Crystals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.317-321
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• 2002

Piezoelectric properties of $(Pb_{1-x}Y_x)[(Ni_{1/3}Nb_{2/3})_{0.15}(Zr_{1/2}Ti_{1/2)})_{0.85}]O_{3}$ (x=0~0.05) ceramics were investigated, The stoichiometric PNN-PZT ceramics required the sintering temperature above $1100^{\circ}C$, but the addition of $Y_{2}O_{3}$ in the PNN-PZT ceramic lowered the sintering temperature down to $1000^{\circ}C$. In case of x=0.005, the electro-mechanical coupling $factor(K_p)$, the piezoelectric $constant(d_{33})$, and the maximum strain ratio of PNN-PZT ceramics sintered at $1000^{\circ}C$ were 53.1%, 395pC/N, and $2200{\times}10^{-6}$ respectively, A 30-layer piezoelectric actuator$(10{\times}10{\times}1.7mm)$ fabricated with the above material showed the maximum strain of $2.09{\mu}m$ under 100V DC bias.

• Journal of the Korean Ceramic Society
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• v.45 no.12
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• pp.766-771
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• 2008

We fabricated single cells with a cathode consisting of a $LaNi_{0.6}Fe_{0.4}O_3-Ce_{0.8}Sm_{0.2}O_{1.9}$ composite (LNF-S20DC composite) active layer and an LNF current collecting layer on a ${0.89ZrO_2}-{0.10Sc_2}{O_3}-0.01{Al_2}{O_3}$ electrolyte sheet. The cathode layers were prepared by the screen-printing method. The cathode properties of these cells were measured by the AC impedance method at $800^{\circ}C$. The cathodes with the ceria-LNF composite active layer exhibited high power performance prior to current loading. We investigated the influence of the mixture ratio of LNF and S20DC on the cathodes properties. The Sm in the ceria particles of the composite cathode was substituted with other rare-earth elements. Cathodes with Pr and Gd co-doped ceria in the active layer provided the better performance than those with Sm- or Gd-doped ceria.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1099-1107
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• 1998

In this study, the microstructure and electric conductivity of 5mol% $Gd_2O_3$-5mol% $Y_2O_3-ZrO_2$ system(5G5YZ) with a variation of sintering time at $1600^{\circ}C$ were investigated. By the result of TEM analysis of 5G5YZ sintered for 12h, a microcrack was observed near grain boundary. The change of the sintering time did not affect the lattice conductivity, but the grain boundary contribution was varied with the sintering time. The grain boundary conductivity of the sample sintered for 1h showed the highest value. Furthermore, the activation energy of the total conductivity was independent upon the sintering time and showed approximately 1.01eV. The highest conductivity measured at $1000^{\circ}C$ was 0.0197S/cm with the sample sintered for 1h. Comparing to 0h’s, the thickness ration of grain boundary as a function of sintering time were 0.88, 1.11 and 1.29 for 1h, 5h and 12h, respectively. In case of the sample sintered for 1h, the thickness of the grain boundary showed the lowest value. The increase of the sintering time over 1h made the decrease of the electric conductivity as well as the increase of the grain growth and the thickness of the grain boundary. As a result, it seemed that the proper sintering time for 5G5YZ composition was 1h.

• Journal of Sensor Science and Technology
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• v.17 no.4
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• pp.295-302
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• 2008

$TiO_2,\;ZrO_2$, and $SiO_2$ were added in the concentration of 1 - 3 wt.% to improve long-term stability for the $SnO2$ thick film gas sensor. Short-term sensor resistances up to 90 h were measured to investigate the stabilization time of initial resistance in air. Long-term resistance drifts in air and in gas to 5000 ppm methane for the sensors annealed at $750^{\circ}C$ for 1 h and continuously heated at an operating temperature of $400^{\circ}C$ were also measured up to 90 days at an interval of 1 day. The long-term drifts in methane sensitivity for the three metal oxide-doped $SnO2$ sensors are closely related to methane sensitivity level, catalytic activity, and long-term drift in sensor resistance in air. Those stabilities are mainly discussed in terms of oxidation state and catalytic activity.