• 제목/요약/키워드: dopants

검색결과 288건 처리시간 0.023초

Spray Structures and Vaporizing Characteristics of a GDI Fuel Spray

  • Park, Dong-Seok;Park, Gyung-Min;Kim, Duck-Jool
    • Journal of Mechanical Science and Technology
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    • 제16권7호
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    • pp.999-1008
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    • 2002
  • The spray structures and distribution characteristics of liquid and vapor phases in non-evaporating and evaporating Gasoline Direct Injection (GDI) fuel sprays were investigated using Laser Induced Exciplex Fluorescence (LIEF) technique. Dopants were 2% fluorobenzene and 9% DEMA (diethyl-methyl-amine) in 89% solution of hexane by volume. In order to study internal structure of the spray, droplet size and velocity under non-evaporating condition were measured by Phase Doppler Anemometry (PDA). Liquid and vapor phases were visualized at different moments after the start of injection. Experimental results showed that the spray could be divided into two regions by the fluorescence intensity of liquid phase: cone and mixing regions. Moreover, vortex flow of vapor phase was found in the mixing region. About 5㎛ diameter droplets were mostly distributed in the vortex flow region. Higher concentration of vapor phase due to vaporization of these droplets was distributed in this region. Particularly, higher concentration of vapor phase and lower one were balanced within the measurement area at 2ms after the start of injection.

Carbon Nanotubes Doped with Nitrogen, Pyridine-like Nitrogen Defects, and Transition Metal Atoms

  • Mananghaya, Michael R.
    • 대한화학회지
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    • 제56권1호
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    • pp.34-46
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    • 2012
  • Dopants and defects can be introduced as well as the intercalation of metals into single wall carbon nanotubes (SWCNTs) to modify their electronic and magnetic properties, thus significantly widening their application areas. Through spinpolarized density functional theory (DFT) calculations, we have systemically studied the following: (i) (10,0) and (5,5) SWCNT doped with nitrogen ($CN_xNT$), (ii) (10,0) and (5,5) SWCNT with pyridine-like defects (3NV-$CN_xNT$), and (iii) chemical functionalization of (10,0) and (5,5) 3NV-$CN_xNT$ with 12 different transition metals (TMs) (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, and Pt). Attention was done in searching for the most stable configurations, deformation, calculating the formation energies, and exploring the effects of the doping concentration of nitrogen and pyridine-like nitrogenated defects on the electronic properties of the nanotubes. Also, calculating the corresponding binding energies and effects of chemical functionalization of TMs on the electronic and magnetic properties of the nanotubes has been made. We found out that the electronic properties of SWCNT can be effectively modified in various ways, which are strongly dependent not only on the concentration of the adsorbed nitrogen but also to the configuration of the adsorbed nitrogen impurities, the pyridine-like nitrogenated defects, and the TMs absorbed; due to the strong interaction between the d orbitals of TMs and the p orbitals of N atoms, the binding strengths of TMs with the two 3NV-$CN_xNT$ are significantly enhanced when compared to the pure SWCNTs.

Diffusion Behaviors of B and P at the Interfaces of Si/$SiO_2$ Multilayer System After the Annealing Process

  • Jang, Jong-Shik;Kang, Hee-Jae;Hwang, Hyun-Hye;Kim, Kyung-Joong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.232-232
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    • 2012
  • The doping of semiconducting elements is essential for the development of silicon quantum dot (QD) solar cells. Especially the doping elements should be activated by substitution at the crystalline sites in the crystalline silicon QDs. However, no analysis technique has been developed for the analysis of the activated dopants in silicon QDs in $SiO_2$ matrix. Secondary ion mass spectrometry (SIMS) is a powerful technique for the in-depth analysis of solid materials and the impurities analysis of boron and phosphorus in semiconductor materials. For the study of diffusion behaviour of B and P by SIMS, Si/$SiO_2$ multilayer films doped by B or P were fabricated and annealed at high temperatures for the activated doping of B and P. The distributions of doping elements were analyzed by SIMS. Boron found to be preferentially distributed in Si layer rather than the $SiO_2$ layer. Especially the B in the Si layers was separated to two components of an interfacial component and a central one. The central component was understood as the activated elements. On the other hand, phosphorus did not show any preferred diffusion.

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New Fluorescent Blue OLED Host and Dopant Materials Based on the Spirobenzofluorene

  • Lee, In-Ho;Gong, Myoung-Seon
    • Bulletin of the Korean Chemical Society
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    • 제32권5호
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    • pp.1475-1482
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    • 2011
  • New spiro[benzo[c]fluorene-7,9'-fluorene] (SBFF)-based blue host materials, 9-phenyl-SBFF (BH-4P) and 5,9-diphenyl-SBFF (BH-6DP), were successfully prepared by spiro-formation of 9-phenyl-7H-benzo[c]fluoren-7-one with 2-bromobiphenyl via lithiation and reaction of 5,9-dibromo-SBFF with phenylboronic acid through the Suzuki reaction, respectively. Diphenyl-[4-(2-[1,1;4,1]terphenyl-4-yl-vinyl)-phenyl]-amine (BD-1) and N,N-diphenyl-N',N'-diphenyl-SBFF-5,9-diamine (BD-6DPA) were used as dopant materials. Blue OLEDs with the configuration ITO/N,N'-bis-[4-(di-m-tolylamino)phenyl]-N,N'-diphenylbiphenyl-4,4'-diamine (DNTPD)/bis[N-(1-naphthyl)-N-phenyl]benzidine (NPB)/host:5% dopant/SFC-137/Al-LiF were prepared from the two host materials doped with BD-1 and BD-6DPA dopants and the devices composed of BH-4P and BH-6DP doped with BD-6DPA showed blue EL spectra at 458 and 463 nm at 7 V and luminance efficiencies of 4.58 and 4.88 cd/A, respectively.

Synthesis and Characterization of 9,9'-Diethyl-2-diphenylaminofluorene Derivatives as Blue Fluorescent Materials for OLEDs

  • Oh, Suh-Yun;Lee, Kum-Hee;Seo, Ji-Hoon;Kim, Young-Kwan;Yoon, Seung-Soo
    • Bulletin of the Korean Chemical Society
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    • 제32권5호
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    • pp.1593-1598
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    • 2011
  • Blue fluorescent materials based on 9,9'-diethyl-2-diphenylaminofluorene derivatives were synthesized and characterized. These materials were used as the blue dopant materials for the emitting layer of organic light-emitting diode devices with the following device structure: ITO/DNTPD (40 nm)/NPB (20 nm)/MADN: dopants (2%, 20 nm)/$Alq_3$ (40 nm)/Liq (1.0 nm)/Al. All devices exhibited highly efficient blue emission. One of these devices exhibited a maximum luminance, luminous efficiency, power efficiency and CIE x, y coordinates of 8400 $cd/m^2$, 8.10 cd/A at 20 $mA/cm^2$, 3.36 lm/W at 20 $mA/cm^2$ and (0.151, 0.159), respectively. A deep blue device with CIE coordinates of (0.152, 0.139) showed the maximum luminance, luminous efficiency and power efficiency of 8630 $cd/m^2$, 6.31 cd/A at 20$mA/cm^2$ and 2.62 lm/W at 20 $mA/cm^2$, respectively.

Optical Characterizations of $LiNbO_{3}$ Single Crystals Doped with $MgO/TiO_{2}$

  • You-song Kim
    • 한국결정성장학회지
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    • 제1권1호
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    • pp.1-4
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    • 1991
  • The applicability of $LiNbO_{3}$ as a substrate for fabrication of Ti-indiffused waveguide electro-optic devices is limited. Ti diffuses comparatively in congruently melting $LiNbO_{3}$; the Curie temperature of this material is too low to permit diffusion temperatures much above $1100^{\circ}C$ without the necessity of re-poling the crystal. Both of hese difficulties could be eliminated by incorporating certain dopants in $LiNbO_{3}$. Crystals of $LiNbO_{3}$ doped with Ti and Mg were grown and evaluated. The electroptic coefficients and birefringence of $LiNbO_{3}$ doped crystals were measured at ${\lambda}=.6328$ and $1.32\;$\mu{m}$. Curie temperatures were measured. The Curie temperature of both undoped and Ti-doped $LiNbO_{3}$ was $1130^{\circ}C$; that for Mg-doped $LiNbO_{3}$ was $30^{\circ}$ higher. From these data, a composition for the crystals was estimated. Thermogravimetric data confirmed this estimate and showed that the composition of Mg : $LiNbO_{3}$ was $49.3{\pm}0.2mole%\;Li_{2}O$ ; the composition of the undoped and Ti : $LiNbO_{3}$ samples was $48.6{\pm}0.2mole%$. Diffusion of Ti into both Mg-doped and Ti-doped $LiNbO_{3}$ crystals was studied as a function of $Li/NbO_{3}$ ratio and temperature.

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고에너지 양성자에 의해 결함을 증가시킨 그래핀 소자의 전기적 특성 변화 연구 (High-energy Proton Irradiated Few Layer Graphene Devices)

  • 김홍렬;김지현
    • Korean Chemical Engineering Research
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    • 제49권3호
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    • pp.297-300
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    • 2011
  • Mechanical exfoliation 방법에 의해 제작된 그래핀(Few Layer Graphene: FLG) 소자에 양성자를 조사하여 의도적으로 결함의 수를 증가시켰다. 그 후 공기중에 노출되었을 때와 진공상태에서 보관한 후에 측정된 전기적 특성을 확인하였다. 또한 UV에 노출시킨 후와 진공상태에서 열처리를 진행한 후에 전기적 특성의 변화들을 관찰하였다. 진공상태에서 보관한 그래핀 소자는 표면에 흡착되어 도펀트로 작용하게되는 species의 수가 감소하기 때문에 전류가 감소하는 결과를 나타내었다. UV에 노출된 상태에서는 오존에 의한 영향으로 약간의 전류 상승이 일어나지만 케리어의 이동도가 감소하게 된다. 반면 진공상태에서 열처리 후에는 전류는 매우 감소하게 되지만 결함과 도펀트에 의한 케리어 산란 현상이 감소하게 되므로 이동도는 크게 증가하게 된다.

Effect of chemical doping on heterostructured Fe-based superconductor Sr2VO3FeAs

  • Ok, Jong Mok;Na, Se Woong;Kim, Jun Sung
    • 한국초전도ㆍ저온공학회논문지
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    • 제20권1호
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    • pp.28-31
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    • 2018
  • Phase diagrams of electron- and hole-doped $Sr_2VO_3FeAs$ are investigated using Co and Mn substitution at Fe site. Metallic nature survives only for Co (electron) doping, not for Mn (hole) doping. The conductivity of $Sr_2VO_3(Fe,M)As$ (M=Mn,Co) is sensitive to the structural modification of FeAs microstructure rather than carrier doping. This finding implies that the FeAs layer plays a dominant role on the charge conduction, thus the $SrVO_3$ layers should be considered as an insulating block. Also, we found that the superconductivity is rapidly suppressed by both dopants. This result is different from the conventional behavior that superconductivity is induced by doping in the most of Fe pnictides. Our finding strongly supports the uniqueness of $Sr_2VO_3FeAs$ among the Fe pnictide superconductors.

LiYSiO4: La 열형광체의 온도에 따른 열발광 특성 (Thermoluminescent Properties by the Cooling Temperature and Grain Size in the LiYSiO4 : La Phosphors)

  • 김영국
    • 한국재료학회지
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    • 제19권9호
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    • pp.494-498
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    • 2009
  • The thermoluminescent phosphors of LiYSi$O_4$ containing rare earth metal(La) dopants of 1 wt.%5 wt.% were prepared, and their TL characteristics have been investigated as a function of parameters such as the doping level and the heating rate. The grain size and cooling temperature of the highly sensitive LiYSi$O_4$: La phosphors have been investigated. The glow curve of LiYSi$O_4$: La has two peaks ($P_1,\;P_2$), and the peak height ratio of the two peaks is called $P_2/P_1$; here, the main peak is $P_2$. Experimental results indicate that the peak height ratios of the glow curve for LiYSi$O_4$: La are clearly correlated with the grain size and cooling temperature. The maximum $P_2/P_1$ ratio 3.25, the maximum sensitivity was observed for a grain size between 100-150 ${\mu}m$. The intensity of the TL peak of the phosphors was linearly proportion to the dose of X-rays.

엔진 유동장에서 분사시기에 따른 혼합기의 기ㆍ액상 농도 분포에 관한 연구 (Concentration Distribution of Liquid/vapor Phases under In-Cylinder Flow Field with Different Injection Timings)

  • 김한재;최동석;김덕줄
    • 한국자동차공학회논문집
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    • 제9권5호
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    • pp.96-104
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    • 2001
  • The present study experimentally investigates the concentration distribution of liquid and vapor phase with different injection timings in the in-cylinder flow field of a optically accessible engine. The conventional MPI, DOHC engine was modified into DI gasoline engine. The images of liquid and vapor phases in the motoring engine were captured by using exciplex fluorescence method. Dopants used in this study were 2% fluorobenzene and 9% DEMA(diethyl-methyl-amino) in 89% solution of hexane by volume respectively. Two dimensional spray fluorescence images of liquid and vapor phases were acquired to analyze spray behaviors and fuel distribution in the in-cylinder flow field. Measurements were carried out fur four different injection timings, namely BTDC 270$^{\circ}$, 180$^{\circ}$, 90$^{\circ}$, and 50$^{\circ}$. Experimental results indicate that behaviors and distribution of vapor phase were largely affected by in-cylinder tumble flow, and mixture formation process was also greatly affected by in-cylinder flow at early injection mode and by ambient pressure at late injection mode.

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