• Title/Summary/Keyword: distributed analog phase shifter

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Design and Fabrication of Distributed Analog Phase Shifter Using Ferroelectric (Ba,Sr)TiO$_3$ Thin Films (강유전체 (Ba,Sr)TiO$_3$ 박막을 이용한 분포 정수형 아날로그 위상변위기 설계 및 제작)

  • 류한철;김영태;문승언;곽민환;이수재
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2002.11a
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    • pp.370-374
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    • 2002
  • This paper describes the design and fabrication of distributed analog phase shifter circuit. The phase shifter consist of coplanar waveguide(CPW) lines that are periodically loaded with voltage tunable (Ba,Sr)TiO$_3$ thin film interdigital(IDT) capacitors deposited by the pulsed laser deposition(PLD) on (001) MgO single crystals. The phase velocity on these IDT loaded CPW lines is a function of applied bias voltage, thus resulting in analog phase shifting circuits. The measured differential phase shift is 48$^{\circ}$ and the insertion loss decreases from -5㏈ to -3㏈ with increasing bias voltage from 0 to 40 V at 100㎐.

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Design and Fabrication of Distributed Analog Phase Shifter Using Ferroelectric $(Ba,\;Sr)TiO_3$ Thin Films (강유전체 $(Ba,\;Sr)TiO_3$ 박막을 이용한 분포 정수형 아날로그 위상 변위기 설계 및 제작)

  • Ryu, Han-Cheol;Moon, Seung-Eon;Lee, Su-Jae;Kwak, Min-Hwan;Lee, Sang-Seok;Kim, Young-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.616-619
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    • 2003
  • This work presents the design, fabrication and microwave performance of distributed analog phase shifter (DAPS) fabricated on $(Ba,\;Sr)TiO_3$ (BST) thin films for X-band applications. Ferroelectric BST thin films were deposited on MgO substrates by pulsed laser deposition. The DAPS consists of high impedance coplanar waveguide (CPW) and periodically loaded tunable BST interdigitated capacitors (IDC). In order to reduce the insertion loss of DAPS and to remove the alteration of unloaded CPW properties according to an applied dc bias voltage, BST layer under transmission lines were removed by photolithography and RF-ion milling. The measured results are in good agreement with the simulated results at the frequencies of interest. The measured differential phase shift based on BST thin films was $24^{\circ}$ and the insertion loss decreased from 1.1 dB to 0.7 dB with increasing the bias voltage from 0 to 40V at 10 GHz.

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