• 제목/요약/키워드: distributed analog phase shifter

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강유전체 (Ba,Sr)TiO$_3$ 박막을 이용한 분포 정수형 아날로그 위상변위기 설계 및 제작 (Design and Fabrication of Distributed Analog Phase Shifter Using Ferroelectric (Ba,Sr)TiO$_3$ Thin Films)

  • 류한철;김영태;문승언;곽민환;이수재
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
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    • pp.370-374
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    • 2002
  • This paper describes the design and fabrication of distributed analog phase shifter circuit. The phase shifter consist of coplanar waveguide(CPW) lines that are periodically loaded with voltage tunable (Ba,Sr)TiO$_3$ thin film interdigital(IDT) capacitors deposited by the pulsed laser deposition(PLD) on (001) MgO single crystals. The phase velocity on these IDT loaded CPW lines is a function of applied bias voltage, thus resulting in analog phase shifting circuits. The measured differential phase shift is 48$^{\circ}$ and the insertion loss decreases from -5㏈ to -3㏈ with increasing bias voltage from 0 to 40 V at 100㎐.

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강유전체 $(Ba,\;Sr)TiO_3$ 박막을 이용한 분포 정수형 아날로그 위상 변위기 설계 및 제작 (Design and Fabrication of Distributed Analog Phase Shifter Using Ferroelectric $(Ba,\;Sr)TiO_3$ Thin Films)

  • 류한철;문승언;이수재;곽민환;이상석;김영태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.616-619
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    • 2003
  • This work presents the design, fabrication and microwave performance of distributed analog phase shifter (DAPS) fabricated on $(Ba,\;Sr)TiO_3$ (BST) thin films for X-band applications. Ferroelectric BST thin films were deposited on MgO substrates by pulsed laser deposition. The DAPS consists of high impedance coplanar waveguide (CPW) and periodically loaded tunable BST interdigitated capacitors (IDC). In order to reduce the insertion loss of DAPS and to remove the alteration of unloaded CPW properties according to an applied dc bias voltage, BST layer under transmission lines were removed by photolithography and RF-ion milling. The measured results are in good agreement with the simulated results at the frequencies of interest. The measured differential phase shift based on BST thin films was $24^{\circ}$ and the insertion loss decreased from 1.1 dB to 0.7 dB with increasing the bias voltage from 0 to 40V at 10 GHz.

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