• Title/Summary/Keyword: display panel

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Stiffness Enhancement of Piecewise Integrated Composite Robot Arm using Machine Learning (머신 러닝을 이용한 PIC 로봇 암 강성 향상에 대한 연구)

  • Ji, Seungmin;Ham, Seokwoo;Cheon, Seong S.
    • Composites Research
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    • v.35 no.5
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    • pp.303-308
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    • 2022
  • PIC (Piecewise Integrated Composite) is a new concept for designing a composite structure with mosaically assigning various types of stacking sequences in order to improve mechanical properties of laminated composites. Also, machine learning is a sub-category of artificial intelligence, that refers to the process by which computers develop the ability to continuously learn from and make predictions based on data, then make adjustments without further programming. In the present study, the tapered box beam type PIC robot arm for carrying and transferring wide and thin LCD display was designed based on the machine learning in order to increase structural stiffness. Essential training data were collected from the reference elements, which were intentionally designated elements among finite element models, during preliminary FE analysis. Additionally, triaxiality values for each finite element were obtained for judging the dominant external loading type, such as tensile, compressive or shear. Training and evaluating machine learning model were conducted using the training data and loading types of elements were predicted in case the level accuracy was fulfilled. Three types of stacking sequences, which were to be known as robust toward specific loading types, were mosaically assigned to the PIC robot arm. Henceforth, the bending type FE analysis was carried out and its result claimed that the PIC robot arm showed increased stiffness compared to conventional uni-stacking sequence type composite robot arm.

Usability Comparison of Educational Webtoon between Touch Display and VR Device Using AttrakDiff (AttrakDiff를 활용한 터치디스플레이와 VR장비의 교육용 웹툰 사용성 비교)

  • Kim, Young-Jin;Yoo, Hoon-Sik
    • Science of Emotion and Sensibility
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    • v.25 no.1
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    • pp.103-114
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    • 2022
  • Global virtual reality (VR) and augmented reality (AR) markets are growing as VR and AR become a new source of revenue for industries around the world. In the edutech sector, an industry that combines traditional education, research on new innovative educational models and business models are scarce, and improvements are needed in the technology group and business environment to realize edutech in detail. Therefore, this study aims to define the elements strategically required for VR Toon development by comparing and analyzing the characteristics of existing touch panel-based display Toon and VR Toon content experiences. Tablet PC Toon and VR Toon were selected to conduct the research. Thirty people (19 men and 11 women) from their teens through their forties were surveyed using questionnaires. The questionnaires were formulated through a quantitative method by using AttrakDiff with a 7-point scale (-3: negative words to 3: positive words). Qualitative evaluations were also performed addressing nine concepts (satisfaction, novelty, operability, creativity, understanding, education, interest, participation, expressiveness). As a result, the usability test results of educational content using tablet personal computers and VR equipment were analyzed from the viewpoint of user experience to define elements expected to be strategically required for VR Toon development.

Effect of Hole-Transporting Layer and Solvent in Solution Processed Highly-Efficient Small Molecule Organic Light-Emitting Diodes

  • Jo, Min-Jun;Hwang, Won-Tae;Chae, Hee-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.250-250
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    • 2012
  • Organic light-emitting diodes (OLED) and polymer light emitting diodes (PLED) have been regarded as the candidate for the next generation light source and flat panel display. Currently, the most common OLED industrial fabrication technology used in producing real products utilizes a fine shadow mask during the thermal evaporation of small molecule materials. However, due to high potential including low cost, easy process and scalability, various researches about solution process are progressed. Since polymer has some disadvantages such as short lifetime and difficulty of purifying, small molecule OLED (SMOLED) can be a good alternative. In this work, we have demonstrated high efficient solution-processed OLED with small molecule. We use CBP (4,4'-N,N'-dicarbazolebiphenyl) as a host doped with green dye (Ir(ppy)3 (fac-tris(2-phenyl pyridine) iridium)). PBD (2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole) and TPD (N,N'diphenyl-N,N'-Bis (3-methylphenyl)-[1,1-biphenyl]-4,4'-diamine) are employed as an electron transport material and a hole transport material. And TPBi (2,2',2''-(1,3,5-phenylene) tris (1-phenyl-1H-benzimidazole)) is used as an hole blocking layer for proper hole and electron balance. With adding evaporated TPBi layer, the current efficiency was very improved. Among various parameters, we observed the property of OLED device by changing the thickness of hole transporting layer and solvent which can dissolve organic material. We could make small molecule OLED device with finding proper conditions.

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The Effect of Milling Conditions for Dissolution Efficiency of Valuable Metals from PDP Waste Panels (밀링조건이 사용 후 PDP패널의 유가금속 용출효율에 미치는 영향)

  • Kim, Hyo-Seob;Kim, Chan-Mi;Lee, Chul-Hee;Lee, Sung-Kyu;Hong, Hyun-Seon;Koo, Jar-Myung;Hong, Soon-Jik
    • Journal of Powder Materials
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    • v.20 no.2
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    • pp.107-113
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    • 2013
  • In this study, the microstructure and valuable metals dissolution properties of PDP waste panel powders were investigated as a function of milling parameters such as ball diameter size, milling time, and rotational speed during high-energy milling process. The complete refinement of powder could achieved at the ball diameter size of 5 mm due to sufficient impact energy and the number of collisions. With increasing milling time, the average particle size was rapidly decreased until the first 30 seconds, then decreased gradually about $3{\mu}m$ at 3 minutes and finally, increased with presence of agglomerated particles of $35{\mu}m$ at 5 minutes. Although there was no significant difference on the size of the particle according to the rotational speed from 900 to 1,100 rpm, the total valuable metals dissolution amount was most excellent at 1,100 rpm. As a result, the best milling conditions for maximum dissolving amount of valuable metals (Mg: 375 ppm, Ag 135 ppm, In: 17 ppm) in this research were achieved with 5 mm of ball diameter size, 3min of milling time, and 1,100 rpm of rotational speed.

A Review on Cases of Indium-related Occupational Diseases and Korean Indium-related Industries and Processes (인듐 관련 직업병 사례 및 국내 사업장 현황)

  • Yi, Gwang Yong;Park, Doo Yong
    • Journal of Korean Society of Occupational and Environmental Hygiene
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    • v.23 no.3
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    • pp.299-306
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    • 2013
  • Objectives: The purpose of this study is to provide current the recent information on indium-related adverse health effects and the Korean indium-related industries. Methods: Peer review papers were searched in environmental, occupational and medical journals with the keyword of 'Indium' and 'ITO' and reviewed. To determine the indium related industries and indium consumption amounts, references and database were investigated and analyzed. In addition, field walk-through surveys and interviews were conducted in order to collect field data and to ascertain the field situation for the processes and industries. Results: A total of 10 cases of indium lung diseases have been reported in series since the first case reported in 2001. Seven cases were found in Japan, two cases in the United States, and one in China. No indium lung case has been reported yet in Korea, but it is believed that there are high potential risks among workers in indium-related industries. There are four categories in indiumrelated- industry; indium production and smelting, manufacturing of indium products such as ITO target, the production of thin films of flat panel display, and indium recovery industry. We found that all these types of industries are operating in Korea. Therefore, it is necessary for industrial hygienists to understand the processes and industries related to indium as well as the adverse health effects of indium. Conclusions: It was found that all four categories of indium-related industry from the indium production to recovery industry are active in Korea. However, the adverse health effects of indium are not well recognized. Therefore, it is believed that there is a high risks in indium-related industry, and it is necessary to make emergency interventions.

Effect of Defect Energy levels on the AC PDP Discharging Characteristics (MgO 보호막의 결함 전위 레벨이 AC-PDP 방전 특성에 미치는 효과)

  • Kwon, Sang-Jik;Kim, Yong-Jae;Cho, Eou-Sik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.12
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    • pp.12-17
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    • 2007
  • The effects of the evaporation rate of MgO films using an electron beam on the MgO properties and the discharge characteristics of a plasma display panel(PDP) were investigated and analyzed. Mgo films were deposited with the various MgO evaporation rates. The MgO properties such as the crystal orientation, the surface roughness, and the film structure, were inspected using XRD(X-ray diffractometry), AFM(atomic force microscopy). From the experiments and Paschen law, the maximum value of the secondary, electron emission coefficient $(\gamma)$ was obtained at the evaporation rate of $5\AA/sec$. The minimum firing voltage and the maximum luminous efficiency were obtained at an evaporation rate of $5\AA/sec$. In the MgO film deposited at $5\AA/sec$, the (200) orientation and $F^+$ center were most intensive. The XRD results and cathode-luminescence(CL) spectra show the $\gamma$ values are correlated with $F/F^+$ centers of the molecular structure of MgO films.

The Effects of a Thermal Annealing Process in IGZO Thin Film Transistors

  • Kim, Hyeong-Jun;Park, Hyung-Youl;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.289.2-289.2
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    • 2016
  • In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

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Surface structure modification of vertically-aligned carbon nanotubes and their characterization of field emission property

  • adil, Hawsawi;Jeong, Gu-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.159-159
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    • 2016
  • Vertically-aligned carbon nanotubes (VCNT) have attracted much attention due to their unique structural, mechanical and electronic properties, and possess many advantages for a wide range of multifunctional applications such as field emission displays, heat dissipation and potential energy conversion devices. Surface modification of the VCNT plays a fundamental role to meet specific demands for the applications and control their surface property. Recent studies have been focused on the improvement of the electron emission property and the structural modification of CNTs to enable the mass fabrication, since the VCNT considered as an ideal candidate for various field emission applications such as lamps and flat panel display devices, X-ray tubes, vacuum gauges, and microwave amplifiers. Here, we investigate the effect of surface morphology of the VCNT by water vapor exposure and coating materials on field emission property. VCNT with various height were prepared by thermal chemical vapor deposition: short-length around $200{\mu}m$, medium-length around $500{\mu}m$, and long-length around 1 mm. The surface morphology is modified by water vapor exposure by adjusting exposure time and temperature with ranges from 2 to 10 min and from 60 to 120oC, respectively. Thin films of SiO2 and W are coated on the structure-modified VCNT to confirm the effect of coated materials on field emission properties. As a result, the surface morphology of VCNT dramatically changes with increasing temperature and exposure time. Especially, the shorter VCNT change their surface morphology most rapidly. The difference of field emission property depending on the coating materials is discussed from the point of work function and field concentration factor based on Fowler-Nordheim tunneling.

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The Effect of Thickness on Flexible, Electrical and Optical properties of Ti- ZnO films on Flexible Glass by Atomic Layer Deposition

  • Lee, U-Jae;Yun, Eun-Yeong;Gwon, Se-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.196.1-196.1
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    • 2016
  • TCO(Transparent Conducting Oxide) on flat glass is used in thin-film photovoltaic cell, flat-panel display. Nowadays, Corning(R) Willow Glass(R), known as flexible substrate, has attracted much attention due to its many advantages such as reliable roll-to-roll glass processing, high-quality flexible electronic devices, high temperature process. Also, it can be an alternative to flexible polymer substrates which have their poor stability and degradation of electrical and optical qualities. For application on willow glass, the flexibility, electrical, optical properties can be greatly influenced by the TCO thin film thickness due to the inherent characterization of thin film in nanoscale. It can be expected that while thick TCO layer causes poor transparency, its sheet resistance become low. Also, rarely reports were focusing on the influence of flexible properties by varying TCO thickness on flexible glass. Therefore, it is very important to optimize TCO thickness on flexible Willow glass. In this study, Ti-ZnO thin films, with different thickness varied from 0 nm to 50 nm, were deposited on the flexible willow glass by atomic layer deposition (ALD). The flexible, electrical and optical properties were investigated, respectively. Also, these properties of Ti-doped ZnO thin films were compared with un-doped ZnO thin film. Based on the results, when Ti-ZnO thin films thickness increased, resistivity decreased and then saturated; transmittance decreased. The Figure of Merit (FoM) and flexibility was the highest when Ti-ZnO thickness was 40nm. The flexible, electrical and optical properties of Ti-ZnO thin films were better than ZnO thin film at the same thickness.

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Investigation on Resistive Switching Characteristics of Solution Processed Al doped Zn-Tin Oxide film

  • Hwang, Do-Yeon;Park, Dong-Cheol;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.180-180
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    • 2015
  • Solution processed Resistive random access memory (ReRAM)은 간단한 공정 과정, 고집적도, 저렴한 가격, 대면적화 플라즈마 데미지 최소화 등의 장점으로 차세대 비휘발성 메모리로 써 많은 관심을 받고 있으며, 주로 high-k 물질인 HfOx, TiOx, ZnO 가 이용 된다. IGZO와 ZTO와 같은 산화물 반도체는 높은 이동도, 대면적화, 넓은 밴드갭으로 인하여 투명한 장점으로 LCDs (Liquid crystal displays)에 이용 가능하며, 최근에는 IGZO와 ZTO에서 Resistive Switching (RS) 특성을 확인한 논문이 보고되면서 IGZO와 ZTO를 ReRAM의 switching medium와 TFT의 active material로써 동시에 활용하는 것에 많은 관심을 받고 있다. 이와 같은 산화물 반도체는 flat panel display 회로에 TFT와 ReRAM의 active layer로써 집적가능 하며 systems-on-panels (SOP)에 적용 가능하다. 하지만 IGZO 보다는 ZTO가 In과 Ga을 포함하지 않기 때문에 저렴하다. 그러므로 IGZO를 대신하는 물질로 ZTO가 각광 받고 있다. 본 실험에서는 ZTO film에 Al을 doping하여 메모리 특성을 평가하였다. 실험 방법으로는 p-type Si에 습식산화를 통하여 SiO2를 300 nm 성장시킨 기판을 사용하였다. 그리고 Electron beam evaporator를 이용하여 Ti를 10 nm, Pt를 100 nm 증착 한다. 용액은 Zn와 Tin의 비율을 1:1로 고정한 후 Al의 비율을 0, 0.1, 0.2의 비율로 용액을 각각 제작하였다. 이 용액을 이용하여 Pt 위에 spin coating방법을 이용하여 1000 rpm 10초, 6000 rpm 30초의 조건으로 AZTO (Al-ZnO-Tin-Oxide) 박막을 증착한 뒤, solvent 및 불순물 제거를 위하여 $250^{\circ}C$의 온도로 30분 동안 열처리를 진행하였다. 이후 Electron beam evaporator를 이용하여 top electrode인 Ti를 100 nm 증착하였다. 제작된 메모리의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과, AZTO (0:1:1, 0.1:1:1, 0.2:1:1)를 이용하여 제작한 ReRAM에서 RS특성을 얻었으며 104 s이상의 신뢰성 있는 data retention특성을 확인하였다. 그리고 Al의 비율이 증가할수록 on/off ratio가 증가하고 endurance 특성이 향상되는 것을 확인하였다. 결론적으로 Al을 doping함으로써 ZTO film의 메모리 특성을 향상 시켰으며 AZTO film을 메모리와 트랜지스터의 active layer로써 활용 가능할 것으로 기대된다.

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