• The monthly packaging world
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• s.374
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• pp.53-58
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• 2024

• Information Display
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• v.2 no.3
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• pp.73-82
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• 2001

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1071-1074
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• 2008

By carefully selecting the structure of dyes, especially the metal complex dyes, and studying the properties of the prototype display. It was found some dyes electrophoresis and display well. The dyes ink with good stability during electrophoresis when the electrode was protected. while the response time is about 300 ms.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.1
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• pp.1-6
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• 1998

Two kinds of the ac-plasma display panel (PDP) with the comb type and the matrix type electrodes were fabricated. The discharge properties were studied as a function of as species (Ne and Ne+He+Xe) and its pressure. The firing voltages (Vf) of the PDP with comb type electrodes were 159 V and 195 V under pure Ne and ne+He+Xe(68:30:2) gas mixture respectively. In case of PDP cell with the matrix type electrodes the Vf was increased to 200 V for pure Ne and 240 V for Ne+He+Xe gas mixture under the same gas pressure(300 mbar).

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.149-153
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• 2019

The technology of electronic packaging among semiconductor technologies is evolving as an axis of the market in its own field beyond the simple assembly process of the past. In the field of electronic packaging technology, the packaging of power modules plays an important role for green electric vehicles. In this power module packaging, the thermal reliability is an important factor, and silicon nitride plays an important part of package substrates, Silicon nitride is a compound that is not found in nature and is made by chemical reaction between silicon and nitrogen. In this study, this core material, silicon nitride, was fabricated by reaction bonded silicon nitride. The fabricated silicon nitride was studied for thermo-mechanical properties, and through this, the structure of power module packaging was made using reaction bonded silicon nitride. And the characteristics of stress were evaluated using finite element analysis conditions. Through this, it was confirmed that reaction bonded silicon nitride could replace the silicon nitride as a package substrate.

• The monthly packaging world
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• s.147
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• pp.100-103
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• 2005

• The monthly packaging world
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• s.276
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• pp.82-85
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• 2016

• The monthly packaging world
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• s.255
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• pp.44-53
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• 2014

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.04a
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• pp.67-80
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• 2001

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.5-9
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• 2004

A new wafer level packaging scheme is presented as an alternative to MEMS package. The proof-of-concept structure is fabricated and evaluated to confirm the feasibility of the idea for MEMS wafer level packaging. The scheme of this work is developed using an electroplated tin (Sn) solder. The critical difference over conventional ones is that wafers are laterally bonded by solder reflow after LEGO-like assembly. This lateral bonding scheme has merits basically in morphological insensitivity and its better bonding strength over conventional ones and also enables not only the hermetic sealing but also its electrical interconnection solving an open-circuit problem by notching through via-hole. The bonding strength of the lateral bonding is over 30 Mpa as evaluated under shear and the hermeticity of the encapsulation is 2.0$\times10^{-9}$mbar.$l$/sec as examined by pressurized Helium leak rate. Results show that the new scheme is feasible and could be an alternative method for high yield wafer level packaging.