• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.86-89
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• 2004

Organic thin film transistors (OTFTs) are fabricated on the plastic substrate through 4-level mask process without photolithographic patterning to yield the simple fabrication process. And we herewith report for the effect of dielectric surface modification on the electrical characteristics of OTFTs. The KIST-JM-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide $(ZrO_2)$ gate dielectric layer. In this work, we have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.173-176
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• 2004

In this study we investigated post ELA(Excimer Laser Annealing) effect on SMC (Silicide Mediated Crystalization) poly-Si (Polycrystalline Silicon) to improve the characteristics of poly-Si. Combining SMC and XeCl ELA were used to crystallize the a-Si (amorphous Silicon) at various ELA energy density for LTPS (Low Temperature Polycrystalline Silicon). We fabricated the conventional SMC poly-Si with no SPC (Solid Phase Crystallization) phase using UV heating method[1] and irradiated excimer laser on SMC poly-Si, so called SMC-ELA poly-Si. After using post ELA we can get better surface morphology than conventional ELA poly-Si and enhance characteristics of SMC poly-Si. We also observed the threshold energy density regime in SMC-ELA poly-Si like conventional ELA poly-Si.

• 한국전기전자재료학회논문지
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• 제28권12호
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• pp.776-780
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• 2015

In this paper, we have studied the effect of mechanical polishing to Ga-polar face for reducing the wafer bowing and strain in free-standing GaN. After the mechanical polishing to Ga-polar face, the bowing of the free-standing GaN substrate significantly decreased with increasing the size of diamond slurry, and eventually changed the bowing direction from concave to convex. Furthermore, the full width at half maximum (FWHM) of high-resolution X-ray diffraction (HR-XRD) were decreased, especially the FWHM of (1 0 2) reflection for $1.0{\mu}m$ size of diamond slurry was significantly decreased from 630 to 203 arcsec. In the case, we confirmed that the compressive strain in Ga-polar face was fully released by Raman measurement.

• 한국고분자학회지:고분자과학과기술
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• 제21권3호
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• pp.247-250
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• 2010

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.234-235
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• 2005

True electronic paper displays are being enabled by the development of two core technologies - plastic electronics for display backplanes and electrophoretic ink for use as the imaging layer. Electrophoretic ink developed by E Ink Corporation continues to advance performance along with parallel technology breakthroughs in flexible TFT backplanes. An overview of these advances in the ink imaging material will be discussed with special emphasis of the expected impact on the emerging flexible display applications.

• E2M - 전기 전자와 첨단 소재
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• 제17권7호
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• pp.21-29
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• 2004

절연성 기판 위에 단결정이 아닌 반도체 박막을 이용하여 만든 전계효과 (Field Effect FET) 소자로 일반적으로 정의되는 박막 트랜지스터 (Thin Film Transistor, TFT)는 1962 RCA lab.의 Weimer에 제안되어 지금까지 많은 발전을 거듭해 왔다. ［1］ TFT는 SRAM이나 ROM에도 응용되지만, 주된 사용 분야는 능동구동방식 평판 디스플레이(Active Matrix Flat Panel Display)의 화소 스위칭 소자이다. 액정 디스플레이(Liquid Crystal Display, LCD)나 유기 전계발광 디스플레이(Organic Electro-luminescence Display, OELD) 화소의 스위칭 소자로도 TFT가 널리 사용되고 있다. (중략)

• 한국전기전자재료학회논문지
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• 제28권7호
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• pp.446-449
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• 2015

An improvement of light-extraction efficiency of organic light-emitting diodes was studied by using random-textured films (RTF). Device was made in a structure of RTF/glass/ITO/TPD/$Alq_3$/LiF/Al. RTF mold was made by spreading PDMS solution on a sandpaper. By pressing this mold on the glass substrate pre-coated with ZPU material, the RTF was obtained. From this study, there was an improvement of external quantum efficiency by about 30% in the device with the random-textured film (RTF 40) compared to that of the reference one.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.221-224
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• 2005

To overcome of poor electron injection in organic light-emitting diodes (OLEDs) with Al cathode, a thin layer of inorganic insulating materials, like as LiF, is inserted between an Al cathode and an organic electron transport layer. Though the device, mentioned above, improves both turn on voltage and luminescent properties, it has some problems like as thickness restriction, less than 2 nm, and difficulty of deposition control. On the other hand, Li organic complex, Liq, is less thickness restrictive and easy to deposit and it also enhances the performance of devices. This paper reports the improved electron injection on OLEDs with another I A group metal complex, Potassium quinolate (Kq), as an electron injection material. OLEDs with organic complexes showed improved turn-on voltage and luminous efficiency which are remarkably improved compared to OLEDs with Al cathode. Especially, OLEDs with Kq have longer life time than OLEDs with Liq.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1208-1211
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• 2008

We study the amorphous In-Ga-Zn-O thin-film transistors (TFTs) properties under monochromatic illumination ($\lambda=420nm$) with different intensity. TFT off-state drain current ($I_{DS_off}$) was found to increase with the light intensity while field effect mobility ($\mu_{eff}$) is almost unchanged; only small change was observed for sub-threshold swing (S). Due to photo-generated charge trapping, a negative threshold voltage ($V_{th}$) shift is also observed. The photofield-effect analysis suggests a highly efficient UV photocurrent conversion in a-IGZO TFT. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order lower than reported value for a-Si:H, which can explain a good switching properties of the a-IGZO TFTs.

• Bulletin of the Korean Chemical Society
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• 제35권8호
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• pp.2453-2459
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• 2014

Five novel cyanine dyes containing julolidine and indole moieties were synthesized. Several color compensating films for plasma display panels (PDP) were prepared using these dyes. The spectroscopic and physicochemical properties of the synthesized dyes in both solution and film state were evaluated. For each color compensating film, the optimum ratio of dye to binder was determined on the basis of transmittance, half band width, and photo-stability of the color compensating film. The five synthesized dyes showed sharp absorption peaks near 590 nm (orange light) and had molar extinction coefficients above $1{\times}10^5M^{-1}cm^{-1}$. The melting point of the dyes was above $200^{\circ}C$ and photo-stability of the color compensating films was improved by introducing substituents at the 5th position on the indole derivatives.