• Journal of Advanced Marine Engineering and Technology
• /
• 제36권1호
• /
• pp.78-84
• /
• 2012

금형의 공정 과정에서 금형과 성형품 사이에서 발생하는 마찰로 인해 발생하는 금형의 마모가공차로 작용하여 성형 품질을 저하시킬 수 있다. 따라서 금형의 내마모성을 향상시키기 위해 질화나 침탄처리, 화염 및 고주파 표면처리 등의 방법들이 적용되어 왔다. 하지만 형상의 제한이나 제품의 변형 등과 같은 문제점을 수반하고 있기 때문에, 이러한 문제점을 해결할 수 있는 표면처리 방법으로써 레이저 표면처리 기술이 검토되고 있다. 따라서 본 연구에서는 고출력 다이오드 레이저를 이용, 금형재료용 주철의 표면처리를 시도하였다. 앞서 제1보와 제2보의 논문에서는 금형의 재료 및 형상의 차이에 따른 열처리 특성을 비교하였다면, 본 논문에서는 열처리 후 생성되는 경화부, 경계부위 및 모재의 조직적 차이를 분석하기 위해 광학 현미경 및 전자 현미경을 이용하여 미세조직을 관찰하고, EDS를 통해 조직의 상태를 파악하였다. 미세조직 관찰 결과, 경화부는 침상의 마르텐사이트 조직이 형성되어 있었다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1995년도 하계학술대회 논문집 C
• /
• pp.1114-1116
• /
• 1995

P/N(CuO/ZnO) Heterojunction gas sensors were made by 2-step sintering methods and its gas sensing property was measured by varying the injected gases and the operating temperatures. As the applied voltage was increased in air ambients, the current-voltage characteristics shown the ohmic properties. However, when the CO gas ambients, 500 ppm at $200^{\circ}C$, the current-voltage characteristics behaves like a rectifying diode s after 3 mins later and its conduction mechanism is discussed qualitatively for the first times.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2003년도 춘계학술대회
• /
• pp.1566-1571
• /
• 2003

The cold plate used for a CEU(Control Electronics Unit) of an EV(Electric Vehicle) is extremely important since the dissipation of the heat generated from power devices like IGBT(Insulated Gate Bipolar Transistor) and diode has a significant effect on the performance as well as the durability of the CED. The cold plate consists of seven power devices, and coolant flows through the passage bonded to a groove of the cold plate. In order to find out heat transfer and pressure drop characteristics, series of numerical analyses for the cold plate with enhanced coolant passages were conducted. Based on results of the numerical analyses, an improved model of the cold plate has been proposed. The experiments under the various conditions have been conducted to compare the performance of the proposed cold plate to the present one. As a result of the numerical analyses together with the experiments, the ideal design of the cold plate could be offered.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 E
• /
• pp.2207-2208
• /
• 1999

In this paper, we would like to study the oscillation characteristics of single mode fiber laser which is composed of a Fabry-Perot resonator, a pump source of 808nm Laser Diode, a $Er^{3+}$ doped single mode fiber with 0.5um diameter.

• 마이크로전자및패키징학회지
• /
• 제12권3호
• /
• pp.235-241
• /
• 2005

Incorporation of solid electrodes frequently involves plasma-based processing. The effect of plasma can influence the physical characteristics, depending on the magnitude in plasma. The undesired feature of plasma-induced damage should be prevented in characterizing the ultra-thin materials, such as ultra-thin films and organic monolayers. The current work at first proves the applicability of a liquid phase electrode in the electrical/dielectric properties through comparative work using Al and Hg on ultrathin $Al_2O_3$ films deposited through atomic layer deposition at low temperature: Two types of metals such as Aluminum (Al) and mercury (Hg) were used as electrodes in $Al_2O_3$ thin films in order to investigate the effect of electrode preparation on the current-voltage characteristics and impedance features as a function of thickness in $Al_2O_3$ film thickness. The success of Hg in $Al_2O_3$ thin films is applied to the AC and DC characterization of the organic monolayers obtained using the Langmuir-Blodgett method. From the DC current-voltage characteristics, the diode-like response is found to originate from the bulk response of the organic materials, evidenced by the fact and the capacitance is inversely related to the absolute thickness of organic layers.

• 전력전자학회논문지
• /
• 제5권5호
• /
• pp.484-492
• /
• 2000

본 논문에서는 고조파전류 보상기능을 갖는 전압 보상기에 관한 연구를 수행하고 그 보상 특성을 해석하였다. 제안된 보상시스템은 하이브리드형 능동전력필터에서와 같이 LC로 구성되어 전력선에 병렬로 연결되는 수동필터와 직렬 변압기를 사용하여 전력선에 직렬로 연결되는 PWM 컨버터를 동시에 사용하는 회로구조를 갖는다. 제안된 보상시스템을 통해 다이오드 정류기와 같은 비선형 부하로 인해 발생되는 고조파 전류의 보상 및 전원 이상 현상으로 발생되는 전원측 이상 전압의 보상을 모두 수행한다. 단상 등가회로를 통해 보상시스템의 동작 원리를 설명하고 d-q 동기좌표계 축 상에서 보상시스템의 모든 제어를 수행하는 제어 알고리즘의 개발을 수행하였으며 실험을 통해 제안된 보상시스템의 보상특성을 확인하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.101.1-101.1
• /
• 2016

Van der Waals (vdW) heterostructures built from two-dimensional layered materials provide an unprecedented opportunity in designing new material systems because the lack of dangling bonds on the vdW surfaces enables the creation of high-quality heterointerfaces without the constraint of atomically precise commensurability. In particular, the ability to build artificial heterostructures, combined with the recent advent of transition metal dichalcogenides, allows the fabrication of unique semiconductor heterostructures in an ultimate thickness limit for fundamental studies as well as novel device applications. In this talk, we will present the characterization of the electronic and optoelectronic properties of atomically thin p-n junctions consisting of vertically stacked WSe2 and MoS2 monolayers. We observed gate-tunable diode-like current rectification and a photovoltaic response across the p-n interface. Unlike conventional bulk p-n junctions, the tunneling-assisted interlayer recombination of the majority carriers is responsible for the tenability of the charge transport and the photovoltaic response. Furthermore, we will discuss the enhanced optoelectronic characteristics in graphene-sandwiched vdW p-n junctions.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.279-282
• /
• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• 한국군사과학기술학회지
• /
• 제17권3호
• /
• pp.311-317
• /
• 2014

In this paper, the flexible and reconfigurable frequency selective surface for C-band was designed using patch array and grid structure for radome and other curved surface applications. Frequency reconfigurability was obtained by varying the capacitance of varactor diode and flexibility is implemented by using flexible PCB. For the validity of the proposed structure, we fabricated the flexible and reconfigurable frequency selective structure and measured the frequency reconfigurability for different bias voltages and different curvature surfaces from the optimized design parameters. From the measurement results, we know that the proposed structure has the wideband reconfigurable frequency bandwidth of 6.05-7.08GHz. We can apply this proposed structure to the curved surface like as radome of aircraft or warship.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.135-138
• /
• 2002

VCO(Voltage Controlled Oscillator) is one of the main components governing the size, performance and power consumption of telecommunication devices. As the devices become much smaller, VCO need to have much smaller size with better characteristics. Buried type passive components of L,C,R were developed previously and the structure of these components are good for minimizing the size of VCO. Our own library of passive components is used in simulation and fabrication of VCO circuit, and surface mounted components like varactor diode are analysed using the measurement circuit designed by ourselves. Two-Dimensional simulation of VCO circuit and local three-Dimensional structure simulation are performed and their relation is obtained. In structure of multi-layered VCO, some components governing the characteristics of VCO are selected and placed on the top of oscillator for the good tuning process. In resonator part, the stripline structure and low loss glass/ceramic material are used to get higher Q value. In our research, a VCO oscillates in the 2.3∼2.36 GHz band is developed.