• 센서학회지
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• 제10권4호
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• pp.207-213
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• 2001

A Schottky type GaN ultraviolet photodetector with a mesa structure was fabricated by depositing an Al ohmic contact on an $n^+$-GaN layer and a Pt Schottky contact on a GaN layer. The undoped GaN(0.5um)/$n^-$-GaN(0.1 um)/$n^+$-GaN(1.5 um) multi-layer structure was grown on a sapphire substrate using MOCVD. The Schottky contact properties were characterized for different passivation conditions. The leakage current of the fabricated Schottky diode was 2 nA at a reverse voltage of 5V. Plus the photocurrent was 120uA using a hydrargyrum lamp with an optical power of 1mW at a wavelength of 365 nm. The diode exhibited an ultraviolet-visible rejection ratio of $10^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.557-560
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• 2008

The main goal of this work is to fabricate light emitting diode (LED) module and apply it to mobile handset. We first fabricated the blue-color LED based on the AlInGaN cell structure with size of $200\;{\mu}m\;{\times}\;200\;{\mu}m$. Also we proposed a new $1.0\;mm\;{\times}\;0.5\;mm$ (1005size) packaging procedure for the LED cell. Thus the overall dimension of our LED cell was as small as $1.0\;mm\;{\times}\;0.5\;mm\;{\times}\;0.4\;mm$ ($W\;{\times}\;L\;{\times}\;T$). As far as we knew it was the first time that this small LED cell dimension had been fabricated and operated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.347-348
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• 2008

The main goal of this work is advances in 1.0mm $\times$ 0.5mm light emitting diode using AlInGaN cell structure and display module. In the first place, we proposed $200{\mu}m{\times}200{\mu}m$ cell structure using AlInGaN. Secondly, we describe new type 1.0mm $\times$ 0.5mm blue and white LED fabrication procedure and results of an examination include mobile application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.438-439
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• 2006

We have used ITO/$Alq_3$/Al structure to study complex impedance in $Alq_3$ based organic light emitting diode. Equivalent circuit was analyzed in a device structure of ITO/$Alq_3$/Al by varying the thickness of $Alq_3$ layer from 60 to 400nm. The impedance results can be fitted using equivalent circuit model of parallel combination resistance $R_p$ and capacitance $C_p$ with a small series resistance $R_s$.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 추계학술대회
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• pp.11-12
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• 2012

본 논문에서는 LED(Light Emitting Diode)조명을 통해 기존 사용되는 적외선 센서로 가시광통신의 기술이 효율적으로 송 수신 가능한지 성능 분석을 하기 위한 연구이다. LED는 전기를 빛으로 바꾸는 성질을 이용하여 조명으로 활용한다. LED 조명 통신 융합 원리는 LED와 PD(Photo Diode)의 깜박임 송수신을 기본 원리로 하여 조명 기능을 유지하면서 통신에서 동시에 실현하게 가능하게 한다. LED의 기본 구조 하에 여러 IT 응용기술이 발전하게 되었고, 현재 실생활에 접하게 되었다. LED조명이 있는 곳이라면 어디서나 무선 통신을 할 수 있는 기술을 하고자, 널리 이용되고 있는 PD인 적외선 센서를 활용하여 시스템의 H/W의 초기 값을 ~1m 이상으로 하고 전체 시스템 속도 향상 시킬 수 있는 가시광 데이터 전송 시스템을 이루었다. 사용된 LED모듈이 통신에 가능한지 성능 분석을 하고, 구현된 연구의 LED 및 적외선 센서를 구성하여 예측 및 통신 거리에 대해 나타내고 응용방법과 가능성에 대해 연구하고자 한다.

• 설비공학논문집
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• 제28권10호
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• pp.394-401
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• 2016

The configuration of an extruded-type cooling structure was optimized for the light-emitting diode (LED) streetlights that have recently replaced convectional metal halide streetlights for energy saving. Natural convection and radiative heat transfer over the cooling structure were simulated using a numerical model with experimental verification. An improved cooling structure type was suggested to overcome the previous performance degeneration, as confirmed by analyzing the thermal flow around the existing cooling structure. A parameter study of the cooling structure geometries was also conducted and, based on the numerical results, the configuration was optimized to reduce the weight of the cooling structure. Consequently, the mass of the cooling structure was reduced by 60%, while the thermal performance was improved by 10%.

• 센서학회지
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• 제12권2호
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• pp.66-71
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• 2003

Pt/AlGaN Schottky-type UV photodetectors were designed and fabricated. A low-temperature AlGaN interlayer buffer was grown between the AlGaN and GaN film in the diode structure epitaxy to obtain crack-free AlGaN active layers. A comparison was then made of the structural, electrical, and optical characteristics of two different diodes: one with an AlGaN($0.5\;{\mu}m$)/n+-GaN(2 nm) structure (type 1) and the other with an AlGaN($0.5\;{\mu}m$)/AlGaN interlayer($150\;{\AA}$)/n+-GaN($3\;{\mu}m$) structure(type 2). A crack-free AlGaN film was obtained by the insertion of a low-temperature AlGaN interlayer with an aluminum mole fraction of 26% into the $Al_xGa_{1-x}N$ layer. The fabricated Pt/$Al_{0.33}Ga_{0.67}N$ photodetector had a leakage current of 1 nA for the type 1 diode and $0.1\;{\mu}A$ for the type 2 diode at a reverse bias of -5 V. For the photoresponse measurement, the type 2 diode exhibited a cut-off wavelength of 300 nm, prominent responsivity of 0.15 A/W at 280 nm, and UV-visible extinction ratio of $1.5{\times}10^4$. Accordingly, the Pt/$Al_{0.33}Ga_{0.67}N$ Schottky-type ultraviolet photodetector with an AlGaN interlayer exhibited superior electrical and optical characteristics and improved UV detecting properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.287-287
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• 2009

The characteristics of slow wave structure employed for backward wave oscillators expected to be a high power microwave source are studied analytically and experimentary. The slow wave structure is a sinusoidally corrugated wall waveguide The dispersion relationn and transmitted characteristics for microwaves are measured in the air. There exist literatures on high efficiency of enhanced radiation from backward wave oscillators involving plasma studied experimentally.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2008년도 춘계학술대회 논문집
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• pp.151-154
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• 2008

The field emission lamps have the advantages to their cold cathode-characteristic and the eco-friendly, We realized that the dual emitter system showed very simple structure which gate and cathode electrodes are formed on the same glass surface. In this paper, we reported the properties of dual emitters depended on variation of gate width and spacing for optimum panel structure. In combination of dual emitter structure and bi-polar driving, electron beam spreads more than normal gate structure or diode structure, and emission uniformity increased in dual emitter structure at 5"-diagonal.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.19-20
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• 2006

We report the design of electroluminescent conjugated polymers for high efficiency, turn-on voltage, color Tuning, and easy processing. Three approaches for the design are reported, being: (1) single chain consideration, (2) supramolecular structure consideration, and (3) conformation manipulation. Two polymer systems are to be reported, being fluorene-based and carbazole-based conjugated polymers.