• Title/Summary/Keyword: diode protection device

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A Comparison Study of Input ESD Protection schemes Utilizing Thyristor and Diode Devices (싸이리스터와 다이오드 소자를 이용하는 입력 ESD 보호방식의 비교 연구)

  • Choi, Jin-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.4
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    • pp.75-87
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    • 2010
  • For two input-protection schemes suitable for RF ICs utilizing the thyristor and diode protection devices, which can be fabricated in standard CMOS processes, we attempt an in-depth comparison on HBM ESD robustness in terms of lattice heating inside protection devices and peak voltages developed across gate oxides in input buffers, based on DC, mixed-mode transient, and AC analyses utilizing a 2-dimensional device simulator. For this purpose, we construct an equivalent circuit for an input HBM test environment of a CMOS chip equipped with the input ESD protection circuits, which allows mixed-mode transient simulations for various HBM test modes. By executing mixed-mode simulations including up to six active protection devices in a circuit, we attempt a detailed analysis on the problems, which can occur in real tests. In the procedure, we suggest to a recipe to ease the bipolar trigger in the protection devices and figure out that oxide failure in internal circuits is determined by the junction breakdown voltage of the NMOS structure residing in the protection devices. We explain the characteristic differences of two protection schemes as an input ESD protection circuit for RF ICs, and suggest valuable guidelines relating design of the protection devices and circuits.

A Study of White-LED Driver IC for Mobile Applications (모바일용 White-LED Driver IC에 관한 연구)

  • Ko, Young-Seok;Park, Shi-Hong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.7
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    • pp.572-575
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    • 2009
  • In this study, we proposed WLED(White-Light Emitting Diode) driver IC for mobile applications. This IC drove WLED for mobile applications with low input voltage and high efficiency by using boost converter. The device was designed by using boost converter applied current-mode control algorithm and provided PWM(Pulse Width Modulation) & analog dimming. Designed IC consisted of bias block, drive block, control block, protection block. We confirmed this device worked well through a application PCB (Printed Circuit Board) test.

Indian Railways: Recent Trends in Control Accidents and Safety Measures for Passengers

  • Kumar, Katta Ashok
    • East Asian Journal of Business Economics (EAJBE)
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    • v.2 no.4
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    • pp.48-55
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    • 2014
  • Indian railways has been regularly in the news albeit for the wrong reasons. The frequency with which train accidents have been taking place has led to serious doubts in the public mind about the safety of rail travel and also the health of the network. Against this background, an attempt is made in this paper to assess the trends in railway accidents for the period from 2000-01 to 2009-10. The paper also highlighted the various measures taken by IR to prevent accidents to ensure safety to the public.

Study on Dosimetric Properties of Radiophotoluminescent Glass Rod Detector (유리선량계의 선량 특성에 관한 연구)

  • Rah, Jeong-Eun;Shin, Dong-Oh;Hong, Ju-Young;Kim, Hee-Sun;Lim, Chun-Il;Jeong, Hee-Gyo;Suh, Tea-Suk
    • Journal of Radiation Protection and Research
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    • v.31 no.4
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    • pp.181-186
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    • 2006
  • A radiophotoluminescent glass rod detector (GRD) system has recently become commercially available. We investigate the dosimetric properties of the GRD regarding the reproducibility of signal, dose linearity and energy dependence. The reproducibility of five measurements for 50 GRDs is presented by an average of one standard deviation of each GRD and it is ${\pm}1.2%$. It is found to be linear in response to doses of $^{60}Co$ beam in the range 0.5 to 50 Gy with a coefficient of linearity of 0.9998. The energy dependence of the GRD is determined by comparing the dose obtained using cylindrical chamber to that by using the GRD. The GRD response for each beam is normalized to the response for a $^{60}Co$ beam. The responses for 6 and 15 MV x-ray beams are within ${\pm}1.5%$ (1SD). The energy response of GRD for high-energy photon is almost the same as the energy dependence of LiF:Mg:Ti (TLD-100)and shows little energy dependence unlike p-type silicon diode detector. The GRDs have advantages over other detectors such diode detector, and TLD: linearity, reproducibility and energy dependency. It has been verified to be an effective device for small field dosimetry for stereotactic radiosurgery.

Optimal Density Assignment to 2D Diode Array Detector for Different Dose Calculation Algorithms in Patient Specific VMAT QA

  • Park, So-Yeon;Park, Jong Min;Choi, Chang Heon;Chun, Minsoo;Han, Ji Hye;Cho, Jin Dong;Kim, Jung-in
    • Journal of Radiation Protection and Research
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    • v.42 no.1
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    • pp.9-15
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    • 2017
  • Background: The purpose of this study is to assign an appropriate density to virtual phantom for 2D diode array detector with different dose calculation algorithms to guarantee the accuracy of patient-specific QA. Materials and Methods: Ten VMAT plans with 6 MV photon beam and ten VMAT plans with 15 MV photon beam were selected retrospectively. The computed tomography (CT) images of MapCHECK2 with MapPHAN were acquired to design the virtual phantom images. For all plans, dose distributions were calculated for the virtual phantoms with four different materials by AAA and AXB algorithms. The four materials were polystyrene, 455 HU, Jursinic phantom, and PVC. Passing rates for several gamma criteria were calculated by comparing the measured dose distribution with calculated dose distributions of four materials. Results and Discussion: For validation of AXB modeling in clinic, the mean percentages of agreement in the cases of dose difference criteria of 1.0% and 2.0% for 6 MV were $97.2%{\pm}2.3%$, and $99.4%{\pm}1.1%$, respectively while those for 15 MV were $98.5%{\pm}0.85%$ and $99.8%{\pm}0.2%$, respectively. In the case of 2%/2 mm, all mean passing rates were more than 96.0% and 97.2% for 6 MV and 15 MV, respectively, regardless of the virtual phantoms of different materials and dose calculation algorithms. The passing rates in all criteria slightly increased for AXB as well as AAA when using 455 HU rather than polystyrene. Conclusion: The virtual phantom which had a 455 HU values showed high passing rates for all gamma criteria. To guarantee the accuracy of patent-specific VMAT QA, each institution should fine-tune the mass density or HU values of this device.

Fabrication of 5,000V, 4-Inch Light Triggered Thyristor using Boron Diffusion Process and its Characterization (Boron 확산공정을 이용한 5,000V, 4인치 광 사이리스터의 제작 및 특성 평가)

  • Park, Kun-Sik;Cho, Doohyung;Won, Jongil;Lee, Byungha;Bae, Youngseok;Koo, Insu
    • The Transactions of the Korean Institute of Power Electronics
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    • v.24 no.6
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    • pp.411-418
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    • 2019
  • Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (VDRM) of 6,500 V. They drove an average on-state current (ITAVM) of 2,270 A, peak nonrepetitive surge current (ITSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I2T) of 17 MA2s without damage to the device.

Effect of 840 nm Light-Emitting Diode(LED) Irradiation on Monosodium Iodoacetate-Induced Osteoarthritis in Rats (흰쥐의 MIA 유발 무릎 뼈관절염에 대한 840 nm LED의 효과)

  • Jekal, Seung-Joo;Kwon, Pil-Seung;Kim, Jin-Kyung;Lee, Jae-Hyoung
    • Journal of the Korean Society of Physical Medicine
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    • v.9 no.2
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    • pp.151-159
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    • 2014
  • PURPOSE: The purpose of this study was to evaluate whether light-emitting diodes (LED) irradiation could be effective in a noninvasive, therapeutic device for the treatment of osteoarthritis(OA). METHODS: Twenty-four male Sprague-Dawley rats were divided into four groups: Vehicle control (saline); monosodium iodoacetate-injection (MIA); LED irradiation after MIA injection (MIA-LED); indomethacin-treatment after MIA injection (MIA-IMT). OA was induced by intra-articular injection of 3 mg MIA through the patellar ligament of the right knee. Vehicle control rats were injected with an equivalent volume of saline. The LED was irradiated for 15 min/day for a week after 7 days of MIA treatment. To compare with the effect of LED irradiation, the indomethacin was administrated 20 mg/kg twice a week orally after 7 days of MIA treatment. Knee joints were removed and fixed overnight in 10% neutral buffered formalin and decalcified by EDTA for 2 week before being embedded in paraffin. The assessment of OA induction were monitored by knee movement and radiographic finding. Histologic analysis were performed following staining with hematoxylin and eosin, safranin O-fast green, or toluidine blue, picrosirius red, and histologic changes were scored according to a modified Mankin system. Apoptotic cell in tissue sections was detected using TUNEL method. RESULTS: Radiographic examination could not show the differences between the MIA-treated and the MIA-LED-treated rats. In the histologic analysis, however, LED irradiation prevented cartilage damage and subchondral bone destruction, and significantly reduced mononuclear inflammatory cell infiltration and pannus formation. LED irradiation also reduced apoptosis of cartilage cells, but it prevented apoptosis of infiltrated inflammatory cells in synovium. In addition, LED irradiation showed an increase of collagen production in the meniscus. CONCLUSION: These results suggest that the 840 nm LED irradiation would be a suitable non-thermal phototherapy for the treatment of OA, as a cartilage protection and anti-inflammatory modality.