• Title/Summary/Keyword: diffusion noise source

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A new approach for calculation of the neutron noise of power reactor based on Telegrapher's theory: Theoretical and comparison study between Telegrapher's and diffusion noise

  • Bahrami, Mona;Vosoughi, Naser
    • Nuclear Engineering and Technology
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    • v.52 no.4
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    • pp.681-688
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    • 2020
  • The telegrapher's theory was used to develop a new formulation for the neutron noise equation. Telegrapher's equation is supposed to demonstrate a more realistic approximation for neutron transport phenomena, especially in comparison to the diffusion theory. The physics behind such equation implies that the signal propagation speed is finite, instead of the infinite as in the case of ordinary diffusion. This paper presents the theory and results of the development of a new method for calculation of the neutron noise using the telegrapher's equation as its basis. In order to investigate the differences and strengths of the new method against the diffusion based neutron noise, a comparison was done between the behaviors of two methods. The neutron noise based on SN transport considered as a precision measuring point. The Green's function technique was used to calculate the neutron noise based on telegrapher's and diffusion methods as well as the transport. The amplitude and phase of Green's function associated with the properties of the medium and frequency of the noise source were obtained and their behavior was compared to the results of the transport. It was observed, the differences in some cases might be considerable. The effective speed of propagation for the noise perturbations were evaluated accordingly, resulting in considerable deviations in some cases.

High accurate three-dimensional neutron noise simulator based on GFEM with unstructured hexahedral elements

  • Hosseini, Seyed Abolfazl
    • Nuclear Engineering and Technology
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    • v.51 no.6
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    • pp.1479-1486
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    • 2019
  • The purpose of the present study is to develop the 3D static and noise simulator based on Galerkin Finite Element Method (GFEM) using the unstructured hexahedral elements. The 3D, 2G neutron diffusion and noise equations are discretized using the unstructured hexahedral by considering the linear approximation of the shape function in each element. The validation of the static calculation is performed via comparison between calculated results and reported data for the VVER-1000 benchmark problem. A sensitivity analysis of the calculation to the element type (unstructured hexahedral or tetrahedron elements) is done. Finally, the neutron noise calculation is performed for the neutron noise source of type of variable strength using the Green function technique. It is shown that the error reduction in the static calculation is considerable when the unstructured tetrahedron elements are replaced with the hexahedral ones. Since the neutron flux distribution and neutron multiplication factor are appeared in the neutron noise equation, the more accurate calculation of these parameters leads to obtaining the neutron noise distribution with high accuracy. The investigation of the changes of the neutron noise distribution in axial direction of the reactor core shows that the 3D neutron noise analysis is required instead of 2D.

Analytical Formula of the Excess Noise in Homogeneous Semiconductors (균질 반도체의 과잉 잡음에 관한 해석적 식)

  • Park, Chan-Hyeong;Hong, Sung-Min;Min, Hong-Shick;Park, Young-June
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.9
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    • pp.8-13
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    • 2008
  • Noise in homogeneous extrinsic semiconductor samples is calculated due to distributed diffusion noise sources. As the length of the device shrinks at a fixed bias voltage, the ac-wise short-circuit noise current shows excess noise as well as thermal noise spectra. This excess noise behaves like a full shot noise when the channel length becomes very small compared with the extrinsic Debye length. For the first time, the analytic formula of the excess noise in extrinsic semiconductors from velocity-fluctuation noise sources is given for finite frequencies. This formula shows the interplay between transit time, dielectric relaxation time, and velocity relaxation time in determining the terminal noise current as well as the carrier density fluctuation. As frequency increases, the power spectral density of the excess noise rolls off. This formula sheds light on noise in nanoscale MOSFETs where quasi-ballistic transport plays an important role in carrier transport and noise.

Acoustic Properties of Three-room Coupled System by Connected Two Apertures (개구부로 연결된 3중 커플룸의 음향특성)

  • Na, Hae Joong;Lim, Byoung-Duk
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.26 no.3
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    • pp.340-349
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    • 2016
  • A coupled room system consists of adjacent rooms and apertures where the sound energy is exchanged between the two rooms. Acoustically, a coupled room system shows a non-exponential decay profile. Most of the related researches have been to analyze the acoustic properties of two-room coupled system so far whereas three-room coupled system were seldom studied. In this regard, this paper aims to analyse the distribution of sound pressure level, sound decay curve of three-room coupled system and sound energy flow between them by using the acoustic diffusion model and to further verify them through experiments. Firstly, the sound pressure level distribution and mean sound pressure level in the steady-state condition are analyzed at various frequencies and source locations. Good agreements are observed in both experiments and analysis results. Secondly, two double slope effect quantifiers of sound attenuation, LDT/EDT and LDT/T10 are compared at various frequencies and for different source locations. The result indicates that LDT/T10, less affected by the early reflection patterns than LDT/EDT, is more suitable to the analysis and experiments of a multi-slope sound decay curve. Lastly, the sound energy flow in each room is analyzed based on the acoustic diffusion model. After the early decay stage, the sound energy is observed to flow from the room with a long reverberation time to the room with a short one.

Combustion Noise Characteristics in Gas and Liquid Flames (가스 및 분무화염의 연소소음 특성에 관한 실험연구)

  • 김호석;백민수;오상헌
    • Journal of Advanced Marine Engineering and Technology
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    • v.18 no.1
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    • pp.81-91
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    • 1994
  • Combustion noise involved with chemical heat release and turbulent process in turbopropulsion systems, gasturbine, industrial furnaces and internal engines is indeed noisy. The experimental study reported in this paper is made to identify a dominant combustion noise in jet flames. Gaseous propane and kerosene fuel have been used with air as the oxidizer in a different jet combustion systems. Combustion and aerodynamic noise are studied through far field sound pressure measurements in an anechoic chamber. And also mean temperature and velocities and turbulent intensities of both isothermal and reacting flow fields were measured. It is shown that axial mean velocity of reacting flow fields is higher about 1 to 3m/sec than that of cold flow in a gaseous combustor. As the gaseous fuel flow rate increases, the acoustic power increases. But the sound pressure level for the spray flame decreases with increasing equivalence ratio. The influence of temperature in the combustion fields due to chemical heat release has been observed to be a dominant noise source in the spray flame. The spectra of combustion noise in gaseous propane and kerosene jet flame show a predominantly low frequency and a broadband nature as compared with the noise characteristics in an isothermal air jet.

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SOI Image Sensor Removed Sources of Dark Current with Pinned Photodiode on Handle Wafer (ICEIC'04)

  • Cho Y. S.;Lee C. W.;Choi S. Y.
    • Proceedings of the IEEK Conference
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    • 2004.08c
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    • pp.482-485
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    • 2004
  • We fabricated a hybrid bulk/fully depleted silicon on insulator (FDSOI) complementary metal oxide semiconductor (CMOS) active pixel image sensor. The active pixel is comprised of reset and source follower transistors on the SOI seed wafer, while the pinned photodiode and readout gate and floating diffusion are fabricated on the SOI handle wafer after the removal of the buried oxide. The source of dark current is eliminated by hybrid bulk/FDSOI pixel structure between localized oxidation of silicon (LOCOS) and photodiode(PD). By using the low noise hybrid pixel structure, dark currents qm be suppressed significantly. The pinned photodiode can also be optimized for quantum efficiency and reduce the noise of dark current. The spectral response of the pinned photodiode on the SOI handle wafer is very flat between 400 nm and 700 nm and the dark current that is higher than desired is about 10 nA/cm2 at a $V_{DD}$ of 2 V.

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Relation between Acoustical Parameters and Ensemble Performance on a Concert Hall Stage (콘서트홀에서 음향지표와 앙상블 연주와의 상관관계)

  • Kim, Yong-Hee;Lee, Pyoung-Jik;Jeon, Jin-Yong
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2007.11a
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    • pp.975-978
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    • 2007
  • This paper investigates stage acoustics in concert halls for ensemble performance in terms of stage support parameters. A concert hall with large stage area was selected. Objective measurements were carried out according to Gade's methods for investigating stage support (ST1). The sound field on the stage was evaluated using stage and audience acoustical parameters. According to the positions at stage, different acoustical characteristics were found. Higher ST1 and lower $IACC_{E3}$ were measured near side and rear stage walls. In case of conductor/soloist vs. orchestra player, objective measurement of acoustical parameters shows that early sound fields depend on the source-receiver distance but late sound fields depend on the location of side and rear walls. In addition, in-situ evaluation of the trio instrumentalists was carried out. Results show that ensemble is favored by higher early reflection of sounds and sound diffusion affecting ‘blending’ of their performance.

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Fabrication of ion implanted GaAs MESFET with Si selectively diffused low resistive layer (선택적 Si 확산을 이용한 저저항층을 갖는 이온주입 GaAs MESFET)

  • 양전욱
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.3
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    • pp.41-47
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    • 1999
  • Ion implanted GaAs MESFET with low resistive layer was fabricated using Si diffusion into GaAs from SiN. During the thermal annealing at 95$0^{\circ}C$ for 30s, Si diffused into ion implanted region of GaAs from SiN and they formed low resistive layer of 350$\AA$ thickness. The diffusion of Si decreased the sheet resistance of source and drain region from 1000$\Omega$/sq. to 400$\Omega$/sq. and the AuGe/Ni/Au ohmic contact resitivity from 2.5$\times$10sub -6$\Omega$-cmsup 2 to $1.5\times$10sup -6$\Omega$-cmsup 2. The fabricated lum gate length MESFET with Si diffused surface layer shows the transconductance of 360ms/mm, 8.5dB of associated gain and 3.57dB of minimum noise figure at 12GHz. These performances are better than that of MESFET without Si diffused layer.

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Simulation of Wave Propagation by Cellular Automata Method (세포자동자법에 의한 파동전파의 시뮬레이션)

  • ;;森下信
    • Journal of KSNVE
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    • v.10 no.4
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    • pp.610-614
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    • 2000
  • Cellular Automata(CA)s are used as a simple mathematical model to investigate self-organization in statistical mechanics, which are originally introduced by von Neumann and S. Ulam at the end of the 1940s. CAs provide a framework for a large class of discrete models with homogeneous interactions, which are characterized by the following fundamental properties: 1) CAs are dynamical systems in which space and time are discrete. 2) The systems consist of a regular grid of cells. 3) Each cell is characterized by a state taken from a finite set of states and updated synchronously in discrete time steps according to a local, identical interaction rule. 4) The state of a cell is determined by the previous states of a surrounding neighborhood of cells. A cellular automaton has been attracted wide interest in modeling physical phenomena, which are described generally, partial differential equations such as diffusion and wave propagation. This paper describes one and two-dimensional analysis of wave propagation phenomena modeled by CA, where the local interaction rules were derived referring to the Lattice Gas Model reported by Chen et al., and also including finite difference scheme. Modeling processes by using CA are discussed and the simulation results of wave propagation with one wave source are compared with that by finite difference method.

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