• KSBB Journal
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• v.11 no.6
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• pp.676-680
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• 1996

The characteristics of controlled drug release were studied for a biodegradable drug delivery system. A biodegradable chitosan matrix was prepared after swelling chitosan with 10%-acetic acid and adding sulfadiazine. The release behavior of sulfadiazine from the chitosan matrix was studied using the Higuchi's diffusion controlled model in phosphate buffer solutions of pH 7.4 and pH 1.2. The drug release time was delayed by increasing the content of sulfadiazine. The drug release at pH 7.4 was more delayed than that at pH 1.2. The reason is that chitosan has greater swelling abilities at low pH than at high pH. The apparent release rate constant(K) increased as the concentration of drug increased. In shoat, the formulation the biodegradable chitosan matrix to suppress the burst effect of drug release mechanism, which led to a sustained release pattern.

• Journal of the Korean Chemical Society
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• v.18 no.2
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• pp.110-116
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• 1974

Reduction of chromate ion at the Pt-electrode was investigated in neutral unbuffered solutions, in buffered solutions of pH between 8 and 10, and in strongly alkaline medium. In buffered solutions of pH between 8 and 10, the number of electrons transfered in the reduction of chromate ion increased progressively with increasing pH. When chromate ion was reduced in 0.2 N sodium hydroxide medium the following mechanism was suggested: $CrO_4^=+H_2O+2e{\rightarrow}CrO_3^=+2OH^-,\;CrO_3^=3H_2O+e{\rightarrow}Cr(OH)_3+3OH^-$ When tetramethylammonium hydroxide (pH=13.5) was used as the supporting electrolyte, a second wave indicated strong adsorption. In unbuffered solutions of 0.1 N potassium chloride the linear sweep voltammogram consists of three or four distinct waves depending on the initial voltage and the voltage sweep rates, but the first wave was difficult to explain as a diffusion controlled wave.

• Korean Journal of Food Science and Technology
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• v.20 no.2
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• pp.256-262
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• 1988

During soaking of 4 varieties of Korean soybeans in water at $4-98^{\circ}C$, an equilibrium state was reached after 3 hr at $60-98^{\circ}C$ but no equilibrium state was observed at $4-40^{\circ}C$ during soaking for 10 hrs. The moisture gain of soybeans held a linear relation with the square root of soaking time regardless of soaking temperatures, which indicated that the basic mechanism of water absorption was diffusion of water. The log time to reach a fixed moisture content showed a linear relation with the soaking temperature during soaking of soybeans at $4-60^{\circ}C$. The z-value decreased in proportions to the increase of hydration. The z-value to reach 50% hydration was the same in all soybeans.

• Journal of Hydrogen and New Energy
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• v.31 no.2
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• pp.177-183
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• 2020

To utilize hydrogen energy, high-yield, high-purity hydrogen needs to be produced; therefore, hydrogen separation membrane studies are being conducted. The membrane reactor that fabricates hydrogen needs to have high hydrogen permeability, selective permeability, heatresistant and a stable mechanical membrane. Dense membranes of Pd and Pd alloys are usually used, but these have drawbacks associated with high cost and durability. Therefore, many researchers have studied replacing Pd and Pd alloys. Dense TiN membrane is highly selective and can separate high-purity hydrogen. The porous alumina has a high permeation rate but low selectivity; therefore, separating high-purity hydrogen is difficult. To overcome this drawback, the two materials are combined as composite reclamations to produce a separation membrane with a high penetration rate and high selectivity. Accordingly, TiN-alumina was manufactured using a high-energy ball mill. The TiN-alumina membrane was characterized by X-ray diffraction analysis, scanning electron microscopy, and energy dispersive spectroscopy. The hydrogen permeability of the TiN-alumina membrane was estimated by a Sievert-type hydrogen permeation membrane apparatus. Due to the change in the diffusion mechanism, the transmittance value was lower than that of the general TiN ceramic separator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.1-10
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• 1996

Solar cells made of the edge-defined film-fed growth Si are characterized using current-voltage, surface photovoltage, electron beam induced current, electron microprobe, scanning electron microscopy, and electron backscattering. The weak temperature dependence of the I-V curves in the EFG solar cells is due to a voltage variable shunt resistance giving higher diode ideality factors than the ideal one. The voltage variable shunt resistance is modeled by a modified recombination mechanism which includes carrier tunneling to distributed impurity energy states in the band gap within the space-charge region. The junction integrity and the substrate quality are characterized simultaneously by combining I-V and surface photovoltage (SPV) measurements. The diode ideality factors and the surface photovoltages characterize the junction integrity while the SPV diffusion lengths characterizes the substrate quality. Most of the measured samples show the voltage variable shunt resistance although how serious it is depends on the solar cell efficiency. The voltage variable shunt resistance is understood as one of the most important factors of the degradation of EFG solar cells.

• Journal of Microbiology and Biotechnology
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• v.23 no.1
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• pp.7-14
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• 2013

In the Bacillus amyloliquefaciens ${\alpha}$-amylase (BAA), the loop (residues 176-185; region I) that is the part of the calcium-binding site (CaI, II) has two more amino acid residues than the ${\alpha}$-amylase from Bacillus licheniformis (BLA). Arg176 in this region makes an ionic interaction with Glu126 from region II (residues 118-130), but this interaction is lost in BLA owing to substitution of R176Q and E126V. The goal of the present work was to quantitatively estimate the effect of ionic interaction on the overall stability of the enzyme. To clarify the functional and structural significance of the corresponding salt bridge, Glu126 was deleted (${\Delta}$E126) and converted to Val (E126V), Asp (E126D), and Lys (E126K) by site-directed mutagenesis. Kinetic constants, thermodynamic parameters, and structural changes were examined for the wild-type and mutated forms using UV-visible, atomic absoption, and fluorescence emission spectroscopy. Wild-type exhibited higher $k_{cat}$ and $K_m$ but lower catalytic efficiency than the mutant enzymes. A decreased thermostability and an increased flexibility were also found in all of the mutant enzymes when compared with the wild-type. Additionally, the calcium content of the wild-type was more than ${\Delta}E126$. Thus, it may be suggested that ionic interaction could decrease the mobility of the discussed region, prevent the diffusion of cations, and improve the thermostability of the whole enzyme. Based on these observations, the contribution of loop destabilization may be compensated by the formation of a salt bridge that has been used as an evolutionary mechanism or structural adaptation by the mesophilic enzyme.

• Mycobiology
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• v.44 no.4
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• pp.302-309
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• 2016

The role of lactic acid bacteria (LAB) in honey as antifungal activity has received little attention and their mechanism of inhibitory of fungi is not fully understood. In this study, LAB were isolated from honey samples from Malaysia, Libya, Saudi Arabia, and Yemen. Twenty-five isolates were confirmed LAB by catalase test and Gram staining, and were screened for antifungal activity. Four LAB showed inhibitory activity against Candida spp. using the dual agar overlay method. And they were identified as Lactobacillus plantarum HS isolated from Al-Seder honey, Lactobacillus curvatus HH isolated from Al-Hanon honey, Pediococcus acidilactici HC isolated from Tualang honey and Pediococcus pentosaceus HM isolated from Al-Maray honey by the 16S rDNA sequence. The growth of Candida glabrata ATCC 2001 was strongly inhibited (>15.0 mm) and (10~15 mm) by the isolates of L. curvatus HH and P. pentosaceus HM, respectively. The antifungal activity of the crude supernatant (cell free supernatant, CFS) was evaluated using well diffusion method. The CFS showed high antifungal activity against Candida spp. especially The CFS of L. curvatus HH was significantly (p < 0.05) inhibited growth of C. glabrata ATCC 2001, C. parapsilosis ATCC 2201, and C. tropicalis ATCC 750 with inhibitory zone 22.0, 15.6, and 14.7 mm, respectively. While CFS of P. pentosaceus HM was significantly (p < 0.05) effective against C. krusei, C. glabrata, and C. albicans with inhibition zone 17.2, 16.0, and 13.3 mm, respectively. The results indicated that LAB isolated from honey produced compounds which can be used to inhibit the growth of the pathogenic Candida species.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.77.1-77.1
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• 2013

Atomic layer deposition (ALD) is known for its self-limiting reaction, which offers atomic-level controllability of the growth of thin films for a wide range of applications. The self-limiting mechanism leads to very useful properties, such as excellent uniformity over a large area and superior conformality on complex structures. These unique features of ALD provide promising opportunities for future electronics. Although the ALD of Al2O3 film (using trimethyl-aluminum and water as a metal precursor and oxygen source, respectively) can be regarded as a representative example of an ideal ALD based on the completely self-limiting reaction, there are many cases deviating from the ideal ALD reaction in recently developed ALD processes. The nonconventional aspects of the ALD reactions may strongly influence the various properties of the functional materials grown by ALD, and the lack of comprehension of these aspects has made ALD difficult to control. In this respect, several dominant factors that complicate ALD reactions, including the types of metal precursors, non-metal precursors (oxygen sources or reducing agents), and substrates, will be discussed in this presentation. Several functional materials for future electronics, such as higher-k dielectrics (TiO2, SrTiO3) for DRAM application, and resistive switching materials (NiO) for RRAM application, will be addressed in this talk. Unwanted supply of oxygen atoms from the substrate or other component oxide to the incoming precursors during the precursor pulse step, and outward diffusion of substrate atoms to the growing film surface even during the steady-state growth influenced the growth, crystal structure, and properties of the various films.

• Journal of Welding and Joining
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• v.23 no.6
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• pp.99-105
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• 2005

The mixing ratio effect of the GTD-111(base metal) powder and the GNI-3 (Ni-l4Cr-9.5Co-3.5Al-2.5B) powder on TLP(Transient Liquid Phase) bonding phenomena and mechanism was investigated. At the mixing ratio of the base metal powder under $50wt\%$, the base metal powders fully melted at the initial time and a large amount of the base metal near the bonded interlayer was dissolved by liquid inter metal. Liquid insert metal was eliminated by isothermal solidification which was controlled by the diffusion of B into the base metal. The solid phases in the bonded interlayer grew epitaxially from the base metal near the bonded interlayer inward the insert metal during the isothermal solidification. The number of grain boundaries farmed at the bonded interlayer corresponded with those of base metal. At the mixing ratio above $60wt\%$, the base metal powder melted only at the surface of the powder and the amount of the base metal dissolution was also less at the initial time. Nuclear of solids firmed not only from the base metal near the bonded interlayer but also from the remained base metal powder in the bonded interlayer. Finally, the polycrystal in the bonded interlayer was formed when the isothermal solidification finished. When the isothermal solidification was finished, the contents of the elements in the boned interlayer were approximately equal to those of the base metal. Cr-W borides and Cr-W-Ta-Ti borides formed in the base metal near the bonded interlayer. And these borides decreased with the increasing of holding time.