• Advances in materials Research
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• v.4 no.3
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• pp.145-164
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• 2015

Biodegredable and injectable nanocomposites based on polypropylene fumarate (PPF) as unsaturated polyester were prepared. The investigated polyester was crosslinked with three different monomers namely N-vinyl pyrrolidone (NVP), methyl methacrylate (MMA) and a mixture of NVP and MMA (1:1 weight ratio) and was filled with 45 wt% of hydroxyapatite (HA) incorporated with different concentrations of chemically treated natural bone powder (NBP) (5, 10 and 15 wt%) in order to be used in treatment of orthopedics bone diseases and fractures. The nanocomposites immersed in the simulated body fluid (SBF) for 30 days, after the period of immersion in-vitro bioactivity of the nanocomposites was studied through Fourier transform infrared (FTIR), scanning electron microscope (SEM), energy dispersive X-ray (EDX) in addition to dielectric measurements. The degradation time of immersed samples and the change in the pH of the SBF were studied during the period of immersion.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.78-85
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• 1995

We fabricated the Pb$_{1-0.28{\alpha}}La_{0.28}TiO_{3}$ (PLT(28)) thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of 100% perovskite phase by drying at 350$^{\circ}C$ after each coating and final annealing at 650$^{\circ}C$. Its electrical properties were measured from the planar capacitors fabricated on the Pt/Ti/SiO$_{2}$/Si substrate. By the P-E hysteresis measurement, its paraelectric phase was identified and its dielectric constant and leakage current density were measured as 936 and 1.1${\mu}A/cm^{2}$, respectively. Those electrical values indicate that the PLT(28) thin film is the most successful candidate for the capacitor dielectrics of ULSI DRAMs at the present.

• Journal of Powder Materials
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• v.17 no.4
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• pp.289-294
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• 2010

For the aim of low-temperature co-fired ceramic microwave components, sintering behavior and microwave properties (dielectric constant ${\varepsilon}_r$, quality factor Q, and temperature coefficient of resonant frequency ${\tau}_f$) are investigated in $Bi_{18}O(Ca_{0.725}Zn_{0.275})_8Nb_{12}O_{65}$ [BCZN] ceramics with addition of $V_2O_5$. The specimens are prepared by conventional ceramic processing technique. As the main result, it is demonstrated that the additives ($V_2O_5$) show the effect of lowering of sintering temperature and improvement of microwave properties at the optimum additive content. The addition of 0.25 wt% $V_2O_5$ lowers the sintering temperature to $890^{\circ}C$ utilizing liquidphase sintering and show the microwave dielectric properties (dielectric constant ${\varepsilon}_r$ = 75, quality factor $Q{\times}f$ = 572 GHz, temperature coefficient of resonance frequency ${\tau}_f\;=\;-10\;ppm/^{\circ}C$). The estimated microwave dielectric properties with $V_2O_5$ addition (increase of ${\varepsilon}_r$, decrease of $Q{\times}f$, shift of ${\tau}_f$ to negative values) can be explained by the observed microstrucure (sintered density, abnormal grain structure) and possibly high-permittivity $Bi_{18}Zn_8Nb_{12}O_{65}$ (BZN) phase determined by X-ray diffraction.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.168-168
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• 2006

Low-operating voltage organic field-effect transistors (OFETs) have been realized with high dielectric constant (${\kappa}$) polymer such as cyanoethylated poly vinyl alcohol (CR-V, ${\kappa}=12$). Since the $high-{\kappa}$polymers are likely to contain water and ionic impurities, large hysteresis and considerable leakage current are frequently observed in OFETs. To solve these problems, we cross-linked the CR-V by using a cross-linking agent. Cross-linked CR-V dielectrics showed high dielectric constant of 11.1 and good insulating properties, resulting in a high capacitance ($81nF/cm^{2}$ at 1MHz) at 120 nm of dielectric thickness. Pentacene FETs with cross-linked CR-V dielectrics exhibited high carrier mobility ($0.72\;cm^{2}/Vs$), small subthreshold swing (185 mV/dec) and little hysteresis at low-operating voltage (${\Leq}-3V$).

• Polymer(Korea)
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• v.25 no.1
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• pp.98-107
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• 2001

Dielectric properties and shape memory characteristics of SBS composites filled with carbon black as conductive filler and (Ba,Ca)$(Sn,Ti)O_3$ or $SrTiO_3$ as dielectrics were investigated for the development of phantom model. SBS/carbon black composite showed an increment of complex dielectric constant with increasing the content of carbon black and the frequency dependence that the dielectric constant decreases with the frequency. The complex dielectric constant and the conductivity of SBS/carbon black/dielectrics composites increased with the increase of dielectrics and the characteristics of the frequency dependence also occurred by the effect of carbon black. Phantom materials with the dielectric properties and the conductivity corresponding to human tissues for the measurement of specific absorption rate(SAR) within the frequency range of current mobile phones(775MHz~2GHz) could be developed by adjusting the composition ratios of carbon black, dielectrics and SBS and by controlling the characteristic of frequency dependence of composite. From thermomechanical cycling test good shape recoverability could be obtained in SBS composite even though the residual strain was increased by the effect of filler.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1288-1290
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• 2005

We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1087-1090
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• 2003

The circular cavity resonator which can measure the dielectric properties of dielectrics in the V -band(50㎓∼75㎓) frequency range was designed and fabricated. Exciting and detecting of the resonator is performed by WR15 rectangular waveguides using Bethe's small hole coupling. GaAs and PTFE plate samples were used for the verification of the performance of the fabricated circular cavity resonator. In the measurement of GaAs and PTFE using that resonator, the permittivity were measured as I2.87 and 2.14, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.4
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• pp.28-32
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• 1992

The electrical properties of ONO interpoly dielectrics grown by polycrystalline silicon have been studied. The polysilicon layer deposited as amorphous state kept its surface smoothness even after subsequent heat cycle induced crystallization. Polysilicon was doped with a POCl$_3$ and arsenic ion implantation. Arsenic was implanted in several different doses. The effective barrier heights calculated from F-N plotting method and breakdown fields increased as the polysilicon doping concentration increased. On the other hand they mere degraded when arsenic concentration in polysilicon exceeded 2{\times}10^{20}[cm^{-3}]$. The reliability of dielectric as monitored by TDDB infant fail and breakdown field showed increasing degradation as doping concentration increased

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.135-138
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• 2003

The circular cavity resonator which can measure the dielectric properties of dielectrics in the V-band($50GHz{\sim}75GHz$) frequency range was designed and fabricated. Exciting and detecting of the resonator is peformed by WR15 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample was used for the verification of the performance of the fabricated circular cavity resonator. In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant $TE_{011}$ mode, the permittivity and $Q{\times}f_0$ were measured as 53.29GHz, 12.87 and 138,000, respectively.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.590-598
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• 1999