• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1084-1087
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• 2001

The (Sr$\sub$0.85/Ca$\sub$0.15/)TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 100[$^{\circ}C$]∼500[$^{\circ}C$]. Also, the crystallinity of SCT thin films are obtained at the substrate temperature above 400[$^{\circ}C$]. SCT thin films had (111) preferred orientation. The dielectric constant changes almost linearly in temperature ranges of-80∼+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.1. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].