• Title/Summary/Keyword: dielectric nanowire

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Surface Plasmon Modes Confined in the Gap Between Metal Nanowire and Dielectric Slab (유전체 판과 금속 나노선 사이에 구속된 표면 플라즈몬 모드)

  • Hahn, Chol-Oong;Oh, Cha-Hwan;Song, Seok-Ho
    • Korean Journal of Optics and Photonics
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    • v.22 no.6
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    • pp.269-275
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    • 2011
  • We propose a metal-dielectric hybrid waveguide structure consisting of a single metal nanowire placed on a flat dielectric slab. Mode size and propagation loss of the surface-plasmons confined in the metal-dielectric gap are compared with those of the complementary structure with a dielectric nanowire on a metal surface. In the case of the nanowire's diameter much smaller than the wavelength the two structures reveal quite different characteristics; the dielectric nanowire-on-metal has longer propagation distance, but only the metal nanowire-on-dielectric exhibits a mode size two fold smaller than the diffraction limit. The proposed hybrid structure may therefore be more suitable for realization of nanocavity lasers.

Dielectric/Magnetic Nanowires Synthesized by the Electrospinning Method for Use as High Frequency Electromagnetic Wave Absorber

  • Jwa, Yong-Ho
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.11a
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    • pp.14-14
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    • 2009
  • High frequency electromagnetic(EM) waves are increasingly being applied in industries because of saturationat lower frequency bands as a result of huge demand. However, electromagneticinterference (EMI) has become a serious problem, and as a result, highfrequency EM absorbers are now being extensively studied. Also, recentdevelopments in absorber technology have focused on producing absorbers thatare thin, flexible, and strong. Hence, one-dimension ferrous nano-materials area potential research field, because of their interesting electronic andmagnetic properties. Commercially, EM wave absorbing products are made ofcomposites, which blend the insulating polymer with magnetic fillers. Inparticular, the shape of the magnetic fillers, such flaky, acicular, or fibrousmagnetic metal particles, rather than spherical, is essential for synthesizingthin and lightweight EM wave absorbers with higher permeability. High aspectratio materials exhibit a higher permeability value and therefore betterabsorption of the EM wave, because of electromagnetic anisotropy. Nanowires areusually fabricated by drawing, template synthesis, phase separation, selfassembly, and electrospinning with a thermal treatment and reduction process.Producing nanowires by the electrospinning method involves a conventionalsol-gel process that is simple, unique, and cost-effective. In thispresentation, Magnetic nanowire and dielectric materials coated magneticnanowire with a high aspect ratio were successfully synthesized by theelectrospinning process with heat treatment and reduction. In addition toestimating the EM wave absorption ability of the synthesized magnetic anddielectric materials coated magnetic nanowire with a network analyzer, weinvestigated the possibility of using these nanowires as high-frequency EM waveabsorbers. Furthermore, a wide variety of topics will be discussed such as thetransparent conducting nanowire and semiconducting nanowire/tube with theelectrospinning process.

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A Study on the Electrical Characterization of Top-down Fabricated Si Nanowire ISFET (Top-down 방식으로 제작한 실리콘 나노와이어 ISFET 의 전기적 특성)

  • Kim, Sungman;Cho, Younghak;Lee, Junhyung;Rho, Jihyoung;Lee, Daesung
    • Journal of the Korean Society for Precision Engineering
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    • v.30 no.1
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    • pp.128-133
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    • 2013
  • Si Nanowire (Si-NW) arrays were fabricated by top-down method. A relatively simple method is suggested to fabricate suspended silicon nanowire arrays. This method allows for the production of suspended silicon nanowire arrays using anisotropic wet etching and conventional MEMS method of SOI (Silicon-On-Insulator) wafer. The dimensions of the fabricated nanowire arrays with the proposed method were evaluated and their effects on the Field Effect Transistor (FET) characteristics were discussed. Current-voltage (I-V) characteristics of the device with nanowire arrays were measured using a probe station and a semiconductor analyzer. The electrical properties of the device were characterized through leakage current, dielectric property, and threshold voltage. The results implied that the electrical characteristics of the fabricated device show the potential of being ion-selective field effect transistors (ISFETs) sensors.

Applications of metamaterials: Cloaking, Photonics, and Energy Harvesting

  • Kim, Kyoungsik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.77.2-77.2
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    • 2015
  • Recently, metamaterials attracted much attention because of the potential applications for superlens, cloaking and high precision sensors. We developed several dielectric metamaterials for enhancing antireflection or light trapping capability in solar energy harvesting devices. Colloidal lithography and electrochemical anodization process were employed to fabricate self-assembed nano- and microscale dielectric metamaterials in a simple and cost-effective manner. We improved broadband light absorption in c-Si, a-Si, and organic semiconductor layer by employing polystyrene (PS) islands integrated Si conical-frustum arrays, resonant PS nanosphere arrays, and diffusive alumina nanowire arrays, respectively. We also demonstrated thin metal coated alumina nanowire array which is utilized as an efficient light-to-heat conversion layer of solar steam generating devices. The scalable design and adaptable fabrication route to our light management nanostructures will be promising in applications of solar energy harvesting system. On the other hands, broadband invisible cloaks, which continuously work while elastically deforming, are developed using smart metamaterials made of photonic and elastic crystals. A self-adjustable, nearly lossless, and broadband (10-12GHz) smart meatamaterials have great potentials for applications in antenna system and military stealth technology.

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Analysis of Quantum Effects Concerning Ultra-thin Gate-all-around Nanowire FET for Sub 14nm Technology

  • Lee, Han-Gyeol;Kim, Seong-Yeon;Park, Jae-Hyeok
    • Proceeding of EDISON Challenge
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    • 2015.03a
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    • pp.357-364
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    • 2015
  • In this work, we investigate the quantum effects exhibited from ultra-thin GAA(gate-all-around) Nanowire FETs for Sub 14nm Technology. We face designing challenges particularly short channel effects (SCE). However traditional MOSFET SCE models become invalid due to unexpected quantum effects. In this paper, we investigated various performance factors of the GAA Nanowire FET structure, which is promising future device. We observe a variety of quantum effects that are not seen when large scale. Such are source drain tunneling due to short channel lengths, drastic threshold voltage increase caused by quantum confinement for small channel area, leakage current through thin gate oxide by tunneling, induced source barrier lowering by fringing field from drain enhanced by high k dielectric, and lastly the I-V characteristic dependence on channel materials and transport orientations owing to quantum confinement and valley splitting. Understanding these quantum phenomena will guide to reducing SCEs for future sub 14nm devices.

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Transparent ZnS:Cu, Mn Powder Electroluminescent Device Using AgNW Electrode (은 나노 와이어 전극을 이용한 ZnS:Cu, Mn 전계발광소자)

  • Jung, Hyunjee;Kim, Jongsu;Kim, Gwangchul
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.2
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    • pp.73-76
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    • 2021
  • This thesis described the optical and electrical properties of the alternating current powder electroluminescent device based on Ag nanowire as a transparent electrode. The Ag nanowire electrode showed the morphology of 20 nm in diameter and 15 ㎛ in length. The transparent electroluminescent devices that were fabricated using the nanomilled ZnS : Cu, Mn phosphor by bar-coating process showed the transmittance of 67%. In order to improve the luminous efficiency, it is necessary to apply the transparent dielectric layer and increase the amount of the nanophosphor while maintaining the transmittance.

Conformal $Al_2$O$_3$ Nanocoating of Semiconductor Nanowires by Atomic Layer Deposition

  • Hwang, Joo-Won;Min, Byung-Don;Kim, Sang-Sig
    • KIEE International Transactions on Electrophysics and Applications
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    • v.3C no.2
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    • pp.66-69
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    • 2003
  • Various semiconductor nanowires such as GaN, GaP, InP, Si$_3$N$_4$, SiO$_2$/Si, and SiC were coated conformally with aluminum oxide (Al$_2$O$_3$) layers by atomic layer deposition (ALD) using trimethylaluminum (TMA) and distilled water ($H_2O$) at a temperature of 20$0^{\circ}C$. Transmission electron microscopy (TEM) revealed that A1203 cylindrical shells conformally coat the semiconductor nanowires. This study suggests that the ALD of $Al_2$O$_3$ on nanowires is a promising method for preparing cylindrical dielectric shells for coaxially gated nanowire field-effect transistors.

Scattering characteristics of metal and dielectric optical nano-antennas

  • Ee, Ho-Seok;Lee, Eun-Khwang;Song, Jung-Hwan;Kim, Jinhyung;Seo, Min-Kyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.76.1-76.1
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    • 2015
  • Optical resonances of metallic or dielectric nanoantennas enable to effectively convert free-propagating electromagnetic waves to localized electromagnetic fields and vice versa. Plasmonic resonances of metal nanoantennas extremely modify the local density of optical states beyond the optical diffraction limit and thus facilitate highly-efficient light-emitting, nonlinear signal conversion, photovoltaics, and optical trapping. The leaky-mode resonances, or termed Mie resonances, allow dielectric nanoantennas to have a compact size even less than the wavelength scale. The dielectric nanoantennas exhibiting low optical losses and supporting both electric and magnetic resonances provide an alternative to their metallic counterparts. To extend the utility of metal and dielectric nanoantennas in further applications, e.g. metasurfaces and metamaterials, it is required to understand and engineer their scattering characteristics. At first, we characterize resonant plasmonic antenna radiations of a single-crystalline Ag nanowire over a wide spectral range from visible to near infrared regions. Dark-field optical microscope and direct far-field scanning measurements successfully identify the FP resonances and mode matching conditions of the antenna radiation, and reveal the mutual relation between the SPP dispersion and the far-field antenna radiation. Secondly, we perform a systematical study on resonant scattering properties of high-refractive-index dielectric nanoantennas. In this research, we examined Si nanoblock and electron-beam induced deposition (EBID) carbonaceous nanorod structures. Scattering spectra of the transverse-electric (TE) and transverse-magnetic (TM) leaky-mode resonances are measured by dark-field microscope spectroscopy. The leaky-mode resonances result a large scattering cross section approaching the theoretical single-channel scattering limit, and their wide tuning ranges enable vivid structural color generation over the full visible spectrum range from blue to green, yellow, and red. In particular, the lowest-order TM01 mode overcomes the diffraction limit. The finite-difference time-domain method and modal dispersion model successfully reproduce the experimental results.

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Morphology Control of Nanostructured Graphene on Dielectric Nanowires

  • Kim, Byeong-Seong;Lee, Jong-Un;Son, Gi-Seok;Choe, Min-Su;Lee, Dong-Jin;Heo, Geun;Nam, In-Cheol;Hwang, Seong-U;Hwang, Dong-Mok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.375-375
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    • 2012
  • Graphene is a sp2-hybridized carbon sheet with an atomic-level thickness and a wide range of graphene applications has been intensely investigated due to its unique electrical, optical, and mechanical properties. In particular, hybrid graphene structures combined with various nanomaterials have been studied in energy- and sensor-based applications due to the high conductivity, large surface area and enhanced reactivity of the nanostructures. Conventional metal-catalytic growth method, however, makes useful applications difficult since a transfer process, used to separate graphene from the metal substrate, should be required. Recently several papers have been published on direct graphene growth on the two dimensional planar substrates, but it is necessary to explore a direct growth of hierarchical nanostructures for the future graphene applications. In this study, uniform graphene layers were successfully synthesized on highly dense dielectric nanowires (NWs) without any external catalysts. We also demonstrated that the graphene morphology on NWs can be controlled by the growth parameters, such as temperature or partial pressure in chemical vapor deposition (CVD) system. This direct growth method can be readily applied to the fabrication of nanoscale graphene electrode with designed structures because a wide range of nanostructured template is available. In addition, we believe that the direct growth growth approach and morphological control of graphene are promising for the advanced graphene applications such as super capacitors or bio-sensors.

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