• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.256-262
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• 2000

The dielectric properties of complex perovskite ($Pb_{1-x}Ca_{x}$)($Fe_{0.5}Ta_{0.5}$)$O_{3}$ with >($0.5{\le}x{\ge}0.65$ were investigated at microwave frequencies. Dilectric constant decreased with increasing Ca content, and was directly proportional to the cube of average ionic ra야 of A-site. For the specimen of x=0.6 sintered at $1250^{\circ}C$ for 3 h in air, dielectric constant (k) of 63, QF of 11000 GHz, and the temperature coefficient of resonant frequency(TCF) of -14ppm/$^{\circ}C$ were obtained. As Ca content increased, TCF of the specimen negatively increased due to the reduction of the tolerance factor(t). Changes in intrinsic loss with varying Ca content was investigated by the infrared reflectivity spectra ranging 50 to 4000 $cm^{-1}$, which were calculated by the Kramers-Kronig analysis and classical oscillator model. The relative tendency of microwave dielectric properties of the ($Pb_{1-x}Ca_{x}$)($Fe_{0.5}Ta_{0.5}$)$O_{3}$ specimens calculated from the reflectivity data were in good agreement with the results by the post resonant method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.214-216
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• 2006

In this study, in order to develop the composition ceramics for low loss and low temperature sintering multilayer piezoelectric actuator, PMN-PZN-PZT ceramics were fabricated using two stage calcination method and $Li_2CO_3$, $Bi_2O_3$ and CuO as sintering aids and their piezoelectric characteristics were investigated according to the 2nd calcination and sintering temperature. At the calcination temperature of $750^{\circ}C$ and sintering temperature of $930^{\circ}C$, density, electromechanical coupling factor ($k_p$), mechanical quality factor ($Q_m$), Dielectric constant (${\varepsilon}_r$) and piezoelectric constant ($d_{33}$) of specimen showed the optimum value of $7.94g/cm^2$ 0.581, 1554, 1555 and 356pC/N, respectively for multilayer piezoelectric actuator application.

• Journal of Sensor Science and Technology
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• v.12 no.1
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• pp.10-15
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• 2003

$PbTiO_3$/P(VDF/TrFE) thin film for pyroelectric infrared sensor's sensing materials have been fabricated by spin coating technique. 65 wt% VDF and 35 wt% TrFE were for P(VDF/TrFE) powder. $PbTiO_3$ powder was used for a ceramic - polymer composites materials. Surface of composite thin film by ceramic fraction factor was observed by SEM. The $PbTiO_3$/P(VDF/TrFE) thin film capacitancy, dielectric constant and dielectric loss measured by impedence analyzer(HP4192A) and pyroelectric coefficient was measured by semiconductor parameter analyzer(HP4145B).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.30-30
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• 2008

Lead-free piezoelectric ceramics 0.97$(Na_{0.5}K_{0.5})NbO_3$-0.03Ba$(Ti_{1-x}Sn_x)O_3$ [NKN-BTS-x] ceramics doped with 1 mol% $MnO_2$ have been fabricated by a sintering technique with muffling. The $MnO_2$-doped NKN-BTS-x ceramics with x$\leq$0.2 have pure orthorhombic perovskite structure at room temperature. The dense microstructure was developed with grain growth as an increase of amount of Sn. Moreover, the addition of Sn was found to have a significant influence on piezoelectric properties. In particular, the $MnO_2$-doped NKN-BTS-0.1 ceramics showed improved piezoelectric properties of piezoelectric constant ($d_{33}$=145pC/N), relatively large electromechanical coupling factor ($k_p$=43%), dielectic constant (${\varepsilon}^T_{33}/{\varepsilon}_0$=676) dielectric loss (tan$\delta$=1.3%).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.455-458
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• 2001

The thin films of high pemitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)$TiO_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/$SiO_2/Si$ substrate at 4,000 [rpm] for 10 seconds. The devices of BST thin films to composite $(Ba_{0.7},Sr_{0.3})TiO_3$ were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_2/Si$ substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$, $3800[\AA]$. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency l[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Journal of the Korean Ceramic Society
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• v.45 no.11
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• pp.681-687
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• 2008

The sintering and electrical properties of the hydrothermal PSZT powders obtained by substituting 4, 6 and 8mol% Sr for Pb in PZT lattice structure were investigated. The lattice constant and particle size decreased in proportion to a quantity of Sr. The sintering properties of PSZT powders showed $7.754g/cm^3$ of sintered density and $4{\mu}m$ of grain size at sintering temperature of $1250^{\circ}C$. Curie temperature lowered gradually from $363.6^{\circ}C\;to\;319.2^{\circ}C$ and relative dielectric constants increased rapidly by a quantity of Sr. In comparison to PZT, moreover, the quality factor of PSZT was increased more than three times with increase of Sr mole ratio, and piezoelectric constant $(d_{31}\;and\;g_{31})$ was decreased. It was found that dielectric loss of PSZT was decreased by 0.574% which was half of PZT.

• Journal of the Optical Society of Korea
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• v.16 no.2
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• pp.151-156
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• 2012

Reflective polarizers can be used as luminance enhancement films for LCD backlights via the polarization recycling process. The optical performances of a wire grid polarizer (WGP) as a reflective polarizer adopted in edge-lit backlights were investigated by luminance evaluation and a time-domain simulation technique. The results were compared to those of a commercial dielectric multilayer film. The luminance gain factor of WGP was smaller than that of the multilayer film by 18%. This was attributed to a much larger internal loss of WGP due to light absorption by metal wires. The internal losses of both reflective polarizers and the polarization conversion efficiency of the backlight were obtained numerically based on a phenomenological model. The optical performances of WGP were optimized by using a time-domain simulation technique. The luminance gain increased and was found to become comparable to, but slightly less than the case of the dielectric multilayer film with decreasing line width.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.652-660
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• 1992

0.10Pb(SbS11/2TSnS11/2T)OS13T-0.25PbTiOS13T-0.65PbZrOS13T ceramics modified by LaS12TOS13T(1[mol%]) and MnOS12T(0-0.30[mol%]) were fabricated. The structural and pyroelectric properties with contents of MnOS12T were studied. Crystal structure of a specimen was rhombohedral type and average grain sizes were decreased with increasing the contents of MnOS12T. Relative dielectric constant and dielectric loss factor were minimum in the specimens doped 0.24[mol%]MnOS12T. (PbS10.99TLaS10.01T)[(SbS11/2TSnS11/2T) TiS10.25TZrS10.65T]OS13T specimen modified 0.24[mol%]MnOS12T showed the good pyroelectric properties and pyroelectric coefficient and voltage responsivity were 6.73x10S0-8T[C/cmS02TK], 125[V/W], respectively. Voltage responsivity was increased with decreasing the chopper frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.455-458
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• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/SiO$_2$/Si substrate at 4,700 [rpm] for 10 seconds. The devices of BST thin films to composite (Ba$\_$0.7/Sr$\_$0.3/)TiO$_3$ were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.107-108
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• 2008

This article describes optimization for PGS(Patterned Ground Shield) of rectangular spiral inductor using Taguchi's Design of Experiment. PGS is decrease method of parasite component by silicon substrate among dielectric loss reduction method. Using taguchi's design of experiment, each parameter is fixed upon that PGS high poison(A), slot spacing(B), strip width(C) and overlap turn number(D) of PGS design parameter. Then we verified that percentage contribution and design sensitivity analysis of each parameter and level by signal to noise ratio of larger-the-better type. We consider percentage contribution and design sensitivity of each parameter and level, and then verify that model of optimization for PGS is lower inductance decreasing ratio and higher Q-factor increasing ratio by EM simulation.