• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.148-151
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• 2000

In this paper, the dielectric properties of epoxy composites used for transformers are studied. The dielectric permittivity and loss of specimen are measured at the temperature range of 20[$^{\circ}C$]~150[$^{\circ}C$] about frequency 30[Hz], 1[kHZ] and 30[kHz] respectively from a series of experiments. Consequently, observed higher values of dielectric permittivity and loss in filled epoxy are attributed to Maxwell-Wagner Polarization effect. Also, glass transition temperature was shifted to higher temperature and value of dielectric permittivity and loss were decreased due to 2nd curing.

• Journal of the Korean Ceramic Society
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• v.52 no.1
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• pp.77-82
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• 2015

The effect of the electrode type on the dielectric and piezoelectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbZrO_3-PbTiO_3$ (PMN-PZT) single crystals was investigated in an effort to improve their properties for various piezoelectric applications. First, three different types of PMN-PZT single crystals [PMN-PZT-A (piezoelectrically soft type; dielectric constant ~ 10,000), PMN-PZT-B (piezoelectrically soft type; phase-transition temperature between the rhombohedral and tetragonal phases ($T_{RT}$) ~ $145^{\circ}C$), PMN-PZT-C (piezoelectrically hard type; high mechanical quality factor ($Q_m$) ~ 1,000)] were fabricated using the solid-state single crystal growth (SSCG) method. Then, four different types of electrodes [sputtered Au, sputtered Cr/Au, sputtered Ti/Au, and fired Ag] were formed on the single crystals, and their dielectric and piezoelectric properties were measured. The single crystals with a sputtered Ti/Au electrode showed the highest dielectric and piezoelectric constants but the lowest coercive electric field ($E_C$). The single crystals with a fired Ag electrode showed the lowest dielectric and piezoelectric constants but the highest coercive electric field ($E_C$). This dependence on the type of electrode was most significant in the piezoelectrically hard PMN-PZT-C single crystals. However, the effects of the electrode type on the phase transition temperatures ($T_C$, $T_{RT}$) and dielectric loss were negligible. These results clearly demonstrate that it is important to select an appropriate electrode so as to maximize the dielectric and piezoelectric properties of single crystals in each type of piezoelectric application.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.347-352
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• 2010

To research the reduction of the dielectric constant depending on the ionic and electronic effects, the dielectric constant of SiOC film was obtained by C-V measurement using the structure of metal/SiOC film/Si, and $n^2$ calculated by the refractive index. The dielectric constant of SiOC film consists with dipole, ions and electrons. However, the dipole moment is ignored in the effect of dielectric constant in SiOC film. THe SiOC film was deposited by the plasma energy, and the gas precursor was dissociated and recombined. Therefore, the dielectric constant of the deposited film consisted of the polarity with ions. THe dielectric constant decreased after annealing process, because of the evaporation of OH hydroxyl group with polarity. The ideal SiOC film as low-k materials was annealed film with lowering the polarity, which is suitable for physical-chemical and electrical properties as an inter layer dielectric materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.628-630
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• 2000

Since the concept for the ozone generation using a nonequilibrium electric discharge techniques had been proposed by Siemens, some experimental and theoretical studies on the ozone generation by streamer corona discharge, surface discharge and silent discharge have been performed. In this paper some results on the discharge characteristics of the silent discharge gap with various dielectric materials were reported. Dielectric materials used in this study were pyrex glass, quartz and glass beefs with diameter of 1 mm.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.196-201
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• 2011

It is known that the relative dielectric constant of insulating polyethylene matrix composites with conducting materials (such as carbon black and metal powder) increases as the conducting material content increases below the percolation threshold. Below the percolation threshold, dielectric properties show an ohmic behavior and their value is almost the same as that of the matrix. The change is very small, but its origin is not clear. In this paper, the dielectric properties of carbon black-filled polyethylene matrix composites are studied based on the effect medium approximation theory. Although there is a significant amount of literature on the calculation based on the theory of changing the parameters, an overall discussion taking into account the theory is required in order to explain the dielectric properties of the composites. Changes of dielectric properties and the temperature dependence of dielectric properties of the composites made of carbon particle and polyethylene below the percolation threshold for the volume fraction of carbon black have been discussed based on the theory. Above the percolation threshold, the composites are satisfied with the universal law of conductivity, whereas below the percolation threshold, they give the critical exponent of s = 1 for dielectric constant. The rate at which the percentages of both the dielectric constant and the dielectric loss factor for temperature increases with more volume fraction below the percolation threshold.

• Journal of Electrical Engineering and Technology
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• v.13 no.4
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• pp.1752-1758
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• 2018

In a low-voltage distribution system, the molded case circuit breaker (MCCB) is a widely used device to protect loads by interrupting over-current; however the hot gas generated from the arc discharge in the interrupting process depletes the dielectric recovery strength between electrodes and leads to re-ignition after current-zero. Even though the circuit breaker is ordinarily tripped and successfully interrupts the over-current, the re-ignition causes the over-current to flow to the load again, which carries over the failure interruption. Therefore, it is necessary to understand the dielectric recovery process and the dielectric recovery voltage of the MCCB. To determine these characteristics, a measuring system comprised of the experimental circuit and source is implemented to apply controllable recovery voltage and over-current. By changing the controllable recovery voltage, in this work, re-ignition is driven repeatedly to obtain the dielectric recovery voltage V-t curve, which is used to analyze the dielectric recovery strength of the MCCB. A measuring system and an evaluation technique for the dielectric recovery strength of the MCCB are described. By using this system and method, the measurement to find out the dielectric recovery characteristics after current-zero for ready-made products is done and it is confirmed that which internal structure of the MCCB affects the dielectric recovery characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.109-122
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• 2002

The standard capacitor must have not only precise value of the capacitance but also the basic properties of low dielectric loss tangent. In the reforming process of capacitors, the dielectric loss tangent must be also reformed. In this paper, the development of standard capacitors of 10 and 100pF for the dielectric loss tangent standard using $Al_{2}O_{3}$ Crystal and the measurement of dielectric loss tangent are discussed. The dielectric loss tangent depends upon the surface between electrode and dielectric in capacitor. With using the Electric Field Simulator, precise design values of electrode are simulated. For the purpose of measuring capacitance effect just in the dielectric, 3-Terminal and 4-Terminal Pair configuration are applied respectively at the electrode and the connector for the measuring equipment. As stated above method, the standard capacitors of 10 and l00pF for the establishment of the dielectric loss tangent standard using the $Al_{2}O_{3}$ Crystal are made with low dielectric loss tangent less than 10-4.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.445-448
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• 2006

Bias stress effect in pentacene organic thin-flim transistors with cross-linked PVA gate dielectric is analyzed. For negative gate bias stress, positive threshold voltage shift is observed. The injected charges from the gate electrode to the defect states of gate dielectric are regarded as the main origin of $V_T$ shift. The reduced bias stress effect using $SiO_2$ blocking layer confirms the assumed mechanism. It is also demonstrated that the inverter with $SiO_2$ blocking layer shows the negligible hysteresis owing to the reduced bias stress effect.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.448-454
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• 1995

The effect of WO3 addition on microwave dielectric properties of BaTiO3-3{(1-x)TiO2-xWO3} system was studied. Addition of WO3 to this system resulted in the formation of BaWO4 and Ba2Ti9O20 phases. Both the dielectric constant (K) and the temperature coefficientof resonant frequency (Tf) were decreased with the amount of WO3 addition. The value of Q$\times$f0 was increased as the amount of WO3 was increased up to x=0.0275, and then decreased when x exceeded 0.03. At x=0.0275, this ceramic showed excellent microwave proprties of K=34-35, Q$\times$f0=50,000-53,000, and near zero ppm/$^{\circ}C$ of Tf.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1992.11a
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• pp.37-40
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• 1992

This paper examined the existance behavior of charged particles by measuring polarity inversion current Thermal Stimulate Current (TSC) and analysed appearance mechanism of polarity inversion current Peak and Also investigated relation between ionic space charge format ion and dielectric breakdown by measuring D.C breakdown impulse breakdown D.C - impulse superposition as a sample of FET. As a result. lie found that dielectric breakdown is likely to happen due to ionic space charge at the transient state when applied polarity inversion voltage and that charged partion of TSE Peak at the high temperature was the same as that of polarity inversion current. Also there was no effect on ionic space charge about the dielectric breakdown in stationary state when applied D.C voltage.