• Advances in materials Research
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• v.1 no.1
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• pp.93-107
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• 2012

Epoxy resin is widely used in high voltage apparatus as insulation. Fillers are often added to epoxy resin to enhance its mechanical, thermal and chemical properties. The addition of fillers can deteriorate electrical performance. With the new development in nanotechnology, it has been widely anticipated that the combination of nanoparticles with traditional resin systems may create nanocomposite materials with enhanced electrical, thermal and mechanical properties. In the present paper we have carried out a comparative study on dielectric properties, space charge and dielectric breakdown behavior of epoxy resin/nanocomposites with nano-fillers of $SiO_2$ and $Al_2O_3$. The epoxy resin (LY556), commonly used in power apparatus was used to investigate the dielectric behavior of epoxy resin/nanocomposites with different filler concentrations. The epoxy resin/nanocomposite thin film samples were prepared and tests were carried out to measure their dielectric permittivity and tan delta value in a frequency range of 1 Hz - 1 MHz. The space charge behaviors were also observed by using the pulse electroacoustic (PEA) technique. In addition, traditional epoxy resin/microcomposites were also prepared and tested and the test results were compared with those obtained from epoxy resin/nanocomposites.

• Journal of the Korea Safety Management & Science
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• v.4 no.4
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• pp.137-146
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• 2002

In order to investigate the effect of irradiation by $^{60}Co-\gamma$rays as well as the e thermal treatment on the dielectric deterioration in ethylene propylene rubber, insulating material for electric cables used in atomic power plants, charging discharging current, residual built- up voltage and dielectric properties are measu discussed in this study. Variance in the characteristic of relative dielectric constant as a function of tem was observed in relatively high dose of irradiation. Since glass transition tem appeared at tens of degree Celsius below zero, the characteristic is attributed orientation polarization. Dielectric loss is generally increased, with increasing d irradiation in the characteristic of dielectric loss as a function of temperature, No d loss by thermal treatment was observed. Dielectric resistance decreases with increa of irradiation in the characteristic of charging current as a function of temperature be considered that dielectric resistance seems to be recovered by thermal treatm characteristic of discharging current as a function of time in the specimen less ir become similar to that of the unirradiated, when thermal treated. A peak is shown residual built- up voltage as a function of time, and the corresponding time of the shorten as increasing dose of irradiation. It is also observed that the corresponding the peak is lengthened by thermal treatment.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.1-5
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• 2006

The effect of A/B moi ratios and sintering temperatures on dielectric properties and microstructure of $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_3$ ceramics were investigated. The dielectric constant decreased with increasing the A/B mol ratio. However, the dielectric loss is improved. As the dielectric properties of A/B mol ratio with m = 1.009 at sintered temperature $1260^{\circ}C$, we obtained dielectric constant 12,800, dielectric loss $3.5\%$ and Y5V temperature characteristics. Highly reliable Ni-MLCCs, 1.6mm$(length){\time}0.8mm(width){\time}0.8mm$(height) with capacitance of 1.23 ${\mu}F$ and 야ssipation loss of $5.2\%$ were obtained employing dielectric material composed of $(Ba_{0.93}Ca_{0.07})_{1.009}(Ti_{0.82}Zr_{0.18})O_3$ - $MnO_2\;0.2wt\%-Y_2O_3\;0.18wt\%,\;-\;SO_2\;0.15wt\%-(Ba_{0.4}Ca_{0.6})SiO_3\;1wt\%$.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.542-546
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• 2008

$BaTiO_3$/epoxy composites can be applied as the dielectric materials for embedded capacitors. The effects of the degree of $BaTiO_3$ particle agglomeration on the dielectric properties of $BaTiO_3$/epoxy composites were investigated in the present study. The degree of particle agglomeration was controlled by the milling of the agglomerated particles. The size and content of the agglomerated $BaTiO_3$ particles decreased with an increase in the milling time. The dielectric constants and polarizations of $BaTiO_3$/epoxy composites abruptly decreased with the increase of the milling time. It was concluded that the dielectric constants and polarizations of $BaTiO_3$/epoxy composites decreased as the degree of particle agglomeration decreased. The degree of agglomeration of $BaTiO_3$ particles turned out to be a very influential factor on the dielectric properties of $BaTiO_3$/epoxy composites.

• ETRI Journal
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• v.21 no.3
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• pp.41-48
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• 1999

We have calculated differential reflection coefficient for isolated well structure of micro-scale, etched on dielectric surface. The differential reflection coefficient is computed using Green's second integral theorem. The purpose of our computation is to find a class of well profiles which give maximal diffusive scattering. To have such a maximal effect, we have concluded that the waist radius of Gaussian beam and its wavelength should be comparable to the well width and that well depth has to be larger than a wavelength. Exact calculation of differential reflection coefficients of dielectric surface with isolated structure on it may be used for the examination of dielectric surfaces and also in making simple but efficient diffuser.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1462-1465
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• 1996

This paper evaluated dielectic characteristics on EPR, Polyester and insulation of these different interface. Dielectric characteristics of insulation rubber, Polyester increace greatly according as temperature increases have no effect on applied voltage and pressure. On the condition that interface exists, we confirmed that dielectric characteristics had been influence on semiconductor which had high $tan{\delta}$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.9
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• pp.1327-1335
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• 1990

In this paper, using the principle of duality between the spatial and spectral domain, we proposed a new microwave imaging technique of a coherent tomographic formulation in the spatial domain and reconstructed the image of dielectric cylinder through simulation and experiment. The numerical and experimental results for the variety o object size, relative dielectric constant have shown the limitation of Born approximation to be used and the effect of retrieved images for various signal bandwidth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.80-84
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• 2018

In this study, we investigated plasmon effects to maximize the sterilization of dielectric discharge. We predicted the effect using the finite difference time domain (FDTD) method as a function of electrode shape, size, and period. The structure of the electrode was designed with a thickness of 100 nm of silver nanoparticles on a glass substrate, and was varied according to the shape, size, and period of the electrode hole. Based on the results, it was confirmed that the effect of plasmons was independent of the shape of the electrode hole. It was thus confirmed that the plasmon effect depended only on the size and period of the holes. Further, the plasmon effect was affected by the size rather than period of the holes. Because the absorption of light by the metal varied according to the size of the hole, the plasmon effect generated by the absorption of light also varied. The best results were obtained when the radius and period of the electrode holes were $0.1{\mu}m$ and $0.4{\mu}m$, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.15-24
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• 2000

The dielectric relaxation of high-dielectric capacitors could be understood as a dynamic property of the capacitor in the time domain, which is regarded as a primarily important charge loss mechanism during the refresh time of DRAMs. Therefore, the equivalent circuit of the dielectric relaxation of the high-dielectric capacitor is essentially required to investigate its effects on DRAM. Nevertheless, There is not any theoretical method which is generally applied to realize the equivalent circuit of the dielectric relaxation. Recently, we have developed a novel procedure for the circuit modeling of the dielectric relaxation of high-dielectric capacitor utilizing the frequency domain. This procedure is a general method based on theoretical approach. We have also verified the feasibility of this procedure through experimental process. Finally, we successfully investigated the effect of dielectric relaxation on DRAM operation with the obtained equivalent circuit through this new method.

• Progress in Superconductivity and Cryogenics
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• v.17 no.1
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• pp.44-47
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• 2015

High voltage superconducting apparatuses have been developed presently around the world under AC and DC sources. In order to improve electrical reliability of superconducting apparatuses with AC and DC networks, a study on the DC as well as the AC electrical breakdown characteristics of cryogenic insulations should be conducted for developing a high voltage superconducting apparatus. Recently, a sub-cooled liquid nitrogen cooling system is known to be promising method for developing a high voltage superconducting apparatus. A sub-cooled liquid nitrogen cooling system uses gaseous nitrogen to control the pressure and enhance the dielectric characteristics. However, the dielectric characteristics of gaseous nitrogen are not enough to satisfy the grade of insulation for a high voltage superconducting apparatus. In this case, the application of solid insulating barriers is regarded as an effective method to reinforce the dielectric characteristics of a high voltage superconducting apparatus. In this paper, it is dealt with a barrier effect on the DC and AC dielectric characteristics of gaseous nitrogen with respect to the position and number of solid insulating barriers. As results, the DC and AC electrical breakdown characteristics by various barrier effects is verified.