• 한국재료학회지
• /
• 제8권11호
• /
• pp.1067-1073
• /
• 1998

CO와 $H_2$의 탄소원을 사용한 마이크로파 플라즈마 화학기상증착 방법으로 SOD 구조에 적용될 양질의 다이아몬드 박막을 형성하였고, SOD 구조를 형성하기 위해 diamond/Si(100) 구조 위에 poly-Si 박막을 저압화학기상 증착법으로 제작하였다. CO/$H_2$탄소원의 유량비 증가에 따라 다이아몬드의 결정은 octahedron 구조에서 cubo-octahedron 구조로 바뀌었으며, 결정면은 {111}과 {100}으로 혼합되어 형성되었다. 비정질 carbon과 non-diamond성분이 없는 양질의 다이아몬드 박막은 CO/$H_2$의 유량비가 0.18일 때 형성되었으며, 주 결정상은 (111) 면이었다. diamond/Si(100) 계면은 void가 없는 평활한 계면을 이루었으며, 다이아몬드 박막의 유전상수, 누설전류와 비저항은 각각 $5.31\times10^{-9}A/cm^2$ 그리고 $9\times{10^7}{\Omega}cm$이었다.

• 한국화재소방학회논문지
• /
• 제30권4호
• /
• pp.73-81
• /
• 2016

정온전선은 평형 도체 사이에 반도전성 폴리머를 연속 압출 방식으로 충전시킨 후 양 도체 사이에 전기를 흐르게 함으로써 고분자에 의한 전열을 이용한 전기 발열체이다. 정온전선은 가격이 저렴하고 시공이 편리하기 때문에 겨울철 수배관의 동파방지용 열선으로 주로 사용되고 있다. 하지만 이러한 유용함에도 불구하고 구조적인 문제로 인하여 두 평형 도체의 절연이 파괴되는 경우에는 화재로 이어질 수도 있는 위험성이 존재하고 있다. 본 논문은 정온전선에 의한 화재현장을 조사하여 원인을 도출하는 방식으로 직접적인 원인을 추론하고자 하였으며, 결함수 분석을 통해 근본적인 문제를 파악해 보고자 하였다. 실제 냉동창고 화재현장을 조사하여 정온전선에 의한 화재원인을 추론한 결과 전선 말단 절연처리 결함에 의한 절연파괴인 것으로 판단되었다. 향후 이 결과는 안전활동 및 유사 화재원인조사 시에도 활용될 수 있을 것이다

• Bulletin of the Korean Chemical Society
• /
• 제29권7호
• /
• pp.1335-1343
• /
• 2008

Theoretical studies on the un-catalyzed and catalyzed aminations of ketene with $NH_3$ and $(NH_3)_2$, respectively, were studied using MP2 and hybrid density functional theory of B3LYP at the 6-31+G(d,p) and 6- 311+G(3df,2p) basis sets in the gas phase and in benzene and acetonitrile solvents. In the gas phase reaction, the un-catalyzed mechanism was the same as those previously reported by others. The catalyzed mechanism, however, was more complicated than expected requiring three transition states for the complete description of the C=O addition pathways. In the un-catalyzed amination, rate determining step was the breakdown of enol amide but in the catalyzed reaction, it was changed to the formation of enol amide, which was contradictory to the previous findings. Starting from the gas-phase structures, all structures were re-optimized using the CPCM method in solvent medium. In a high dielectric medium, acetonitrile, a zwitterions formed from the reaction of $CH_2$=C=O with $(NH_3)_2$, I(d), exists as a genuine minimum but other zwitterions, I(m) in acetonitrile and I(d) in benzene become unstable when ZPE corrected energies are used. Structural and energetic changes induced by solvation were considered in detail. Lowering of the activation energy by introducing additional $NH_3$ molecule amounted to ca. −20 $\sim$ −25 kcal/mol, which made catalyzed reaction more facile than un-catalyzed one.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.591-593
• /
• 2000

In this paper, we describe the results of a combined experimental theoretical study designed to understand and predict the dielectric properties of SF$_{6}$ and SF$_{6}$+Ar mixtures. The electron transport, ionization, and attachment coefficients for pure SF$_{6}$ and gas mixtures containing SF$_{6}$ has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] SF$_{6}$+Ar mixtures were measured by time- of- flight method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with the experimental and theoretical for a rang of E/N values. Electron energy distribution functions computed from numerical solutions of the electron transport and reaction coefficients as functions of E/N. We have calculated $\alpha$,η and $\alpha$-η the ionization, attachment coefficients, effective ionization coefficients, and (E/N), the limiting breakdown electric-field to gas density ratio, in SF$_{6}$ and SF$_{6}$+Ar mixtures by numerically solving the Boltzmann equation for the electron energy distribution. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of theections of the

• Journal of Industrial and Engineering Chemistry
• /
• 제68권
• /
• pp.117-123
• /
• 2018

Recently, aqueous method has attracted lots of attention because it enables the solution-processed metal oxide thin film with high electrical properties in low temperature fabrication condition to various flexible devices. Focusing the development of aqueous route, many researchers are only focused on metal oxide materials. However, for expansive application of the aqueous-based metal oxide films, the systematic study of performance change with process variables for the development of aqueous-based metal oxide insulator film is urgently required. Here, we propose importance of process variables to achieve high electrical-performance metal oxide insulator based on the aqueous method. We found that the significant process variables including precursor solution temperature and humidity during the spincoating process strongly affect chemical, physical, and electrical properties of $AlO_x$ insulators. Through the optimization of significant variables in process, an $AlO_x$ insulator with a leakage current value approximately $10^5$ times smaller and a breakdown voltage value approximately 2-3 times greater than un-optimized $AlO_x$ was realized. Finally, by introducing the optimized $AlO_x$ insulators to solutionprocessed $InO_x$ TFTs, we successfully achieved $InO_x/AlO_x$ TFTs with remarkably high average field-effect mobility of ${\sim}52cm^2V^{-1}\;s^{-1}$ and on/off current ratio of 106 at fabrication temperature of $250^{\circ}C$.

• 한국재료학회지
• /
• 제31권10호
• /
• pp.539-545
• /
• 2021

The effect of Sm₂O₃ doping on the microstructure and electrical properties of the ZPCCA-based varistors is comprehensively investigated. The increase of doping content of Sm₂O₃ results in better densification (from 5.70 to 5.82 g/cm³) and smaller mean grain size (from 7.8 to 4.1 ㎛). The breakdown electric field increases significantly from 2568 to 6800 V/cm as the doping content of Sm₂O₃ increases. The doping of Sm₂O₃ remarkably improves the nonlinear properties (increasing from 23.9 to 91 in the nonlinear coefficient and decreasing from 35.2 to 0.2 µA/cm² in the leakage current density). Meanwhile, the doping of Sm₂O₃ reduces the donor concentration (the range of 2.73 × 10¹⁸ to 1.18 × 10¹⁸ cm^-3) of bulk grain and increases the barrier height (the range of 1.10 to 1.49 eV) at the grain boundary. The density of the interface states decreases in the range of of 5.31 × 10¹² to 4.08 × 10¹² cm^-2 with the increase of doping content of Sm₂O₃. The dielectric constant decreases from 1594.8 to 507.5 with the increase of doping content of Sm₂O₃.

• 한국정보통신학회논문지
• /
• 제24권8호
• /
• pp.1058-1063
• /
• 2020

본 논문에서는 IT 접지 시스템의 감전 및 화재사고 방지를 위한 새로운 절연 저항 계산 기법을 소개한다. 최근 신재생 에너지와 에너지 저장 장치의 확대 보급으로 태양광 발전 시장이 급속하게 성장하고 있으나 절연이 파괴되어 화재사고가 빈번히 발생함에 따라 IT 접지 방식에도 절연 저항 상태를 감시하는 장치가 필수적으로 요구되고 있다. 제안하는 절연 저항 계산 기법은 기존의 고정된 시정수곱 계수기반의 알고리즘에 비해 절연 임피던스의 조건에 따라 동적시정수곱계수를 적용함으로써 넓은 절연 저항 범위에서 빠른 응답 시간과 높은 정확도를 갖는다. 제안하는 동적 시정수 기반 절연 저항 계산 기법은 기존의 방법에 비해 최대 응답 시간은 39.29초, 오차율은 20.11%를 개선시키는 효과를 보였다.

• 한국표면공학회지
• /
• 제54권1호
• /
• pp.30-36
• /
• 2021

In this study, double-layered anodizing films were formed on Al 5052 and Al 6061 alloys consecutively first in sulfuric acid and then in oxalic acid, and hardness, withstand voltage, surface roughness and acid resistance of the anodizing films were compared with single-layered anodizing films in sulfuric acid and oxalic acid electrolytes. Hardness of the double-layered anodizing film decreased with increasing ratio of inner layer to outer layer for both Al 5052 and Al 6061 alloys, suggesting that outer anodizing film formed in sulfuric acid electrolyte is damaged during the second anodizing in oxalic acid electrolyte. Withstand voltage of the double-layered anodizing films increased with increasing the thickness ratio of inner layer to outer layer. Surface roughness of the double-layered anodizing films were comparable with that of single-layered anodizing film formed in sulfuric acid but higher than that of single layer anodizing film formed in oxalic acid electrolyte. In acid resistance test, all of the double-layered and single-layered anodizing films showed good acid resistance more than 3 h without any visible gas evolution, which is attributable to sealing of pores. Based on the experimental results obtained in this work, it is possible to design a double-layered anodizing film with cost-effectiveness and improved physical and electrical properties by combining two consecutive anodizing processes of sulfuric acid anodizing and oxalic acid anodizing methods.

• 한국초전도ㆍ저온공학회논문지
• /
• 제12권3호
• /
• pp.21-24
• /
• 2010

A cryogenic insulation technique for a high voltage and a large current capacity of a conductor are now two big issues in a field of recent R&D projects of superconducting power devices, especially a superconducting power transformer. For the large rated currents of the power transformer, it is well known that lots of 2nd generation superconducting conductor, so called coated conductor, should be stacked together with transpositions in order to get an even distributions of the currents. We had come up with an idea of a CTCC (Continuously Transposed Coated Conductor) as a conductor for a large power superconducting transformer, and keep trying to verify the usefulness of the conductor. As one of the efforts of verifying, we prepared and tested a sample CTCC with insulations for high voltage, which includes the epoxy coating and Nomex$^{(R)}$ wrapping. This paper contains the insulation process and dielectric breakdown test results. We expect the results obtained from this experiment to improve an insulation technique for high voltages in various cryogenic environments[1,2].

• Journal of Advanced Marine Engineering and Technology
• /
• 제38권1호
• /
• pp.48-55
• /
• 2014

UV 발생용 플래시램프의 전원공급장치는 강력한 아크방전을 유발하기 위하여 높은 승압 비를 갖는 전압변환회로를 가지고 있다. 일반적인 구조는 높은 승압비의 트랜스포머와 배전압정류방식(코크라프트 올튼 회로 등)으로 방전관의 절연을 파괴함과 동시에 방전관에 전류를 급격히 통과시키는 방식으로 구동한다. 이 때, 제논방전관의 방전특성상 입력전류를 제한하지 않으면 방전관의 과다 발열, 전극손실, 봉입기체의 산화가속 등으로 수명저하의 원인이 되므로, 반드시 방전관에 유입되는 전류를 제한해야 되며, 이를 Ballast라 하는데 일반적으로 인덕터나 저항을 사용하여 인입전류량을 제한한다. 트랜스포머의 자가 공진(self-resonance)을 이용하면 낮은 1, 2차권선 비에도 고유주파수의 전후에서 비교적 높은 피크 전압을 얻을 수 있다. 또한 트랜스포머의 특정주파수에서 고유임피던스 성분을 이용하여 출력전압을 필터링하면 제논방전관이 자가 발진방식으로 동작하므로 종래의 회로구성보다 간단하고 경제적인 아크방전 파워 스테이지의 구성이 가능하다.