• Journal of Electrical Engineering and Technology
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• 제11권6호
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• pp.1783-1786
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• 2016

The paper investigates the insulation properties of the supercritical $CO_2$ ($SCCO_2$) fluid as an insulating medium for electrical apparatuses. The insulating material is crucial for electrical apparatuses and $SF_6$ gas has been widely used for high power electrical apparatuses. There have been many research efforts to develop substituents for $SF_6$ gas because of high global warming potential. We obtained above 350 kV/mm insulation strength with 12.0 MPa $SCCO_2$. The positive and negative IEC standard pulses are applied between two 10 mm diameter spherical electrodes. The insulation strength of $SCCO_2$ is at least 2.5 times higher than that of $CO_2$ gas at 6.0MPa. The insulation strength of $SCCO_2$ fluid is about 10 times higher than that of $SF_6$ at 0.5MPa which is the ordinary operating pressure of electrical switchgears. Using the result, we expect that the time for switching and dielectric recovery could be reduced using $SCCO_2$ fluid as an insulating medium.

• 전자공학회논문지A
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• 제28A권12호
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• pp.59-64
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• 1991

Thin (25-103$\AA$) SiO$_2$ films are grown using the rapid thermal oxidation processing at temperatures of 105$0^{\circ}C$-115$0^{\circ}C$ for 5-30 sec, in order to investigate the characteristics of ultra thin oxide. For measuring the thickness of oxide TEM, ellipsometry, and C-V method which is taken in the condition of small surface band bending are used and compared. When neglecting the small deviation affected by both interface state and moisture charge effect, those three methods described above give similar results. In order to examine the effect of rapid thermal annealing, part of samples are annealed in N$_2$ ambient. MOS capacitors are fabricated and the characteristics of I-V and C-V are measured. Measurements show that the activation energy of initial thickness of oxide grown during the ramp-up time is of 1.125eV and the activation energy of the oxidation rate is of 0.98eV. As oxidation temperature is increased, dielectric breakdown field E$_{BD}$ is decreased due to the increase of fixed charge density N$_f$ However, E$_{BD}$ is shown to be decreased as increasing the thickness of oxide. The increase of N$_f$ in the early stage of thermal annealing results in the decrease of E$_{BD}$.

• 한국세라믹학회지
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• 제32권3호
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• pp.371-377
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• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• Journal of electromagnetic engineering and science
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• 제8권3호
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• pp.129-133
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• 2008

An integrated passive device(IPD) technology by semi-insulating(SI)-GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal(MIM) capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost by only 6 process layers. This paper presents the Wilkinson power divider with excellent performance for digital cellular system(DCS). The insertion loss of this power divider is - 0.43 dB and the port isolation greater than - 22 dB over the entire band. Return loss in input and output ports are - 23.4 dB and - 25.4 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within die size of $1.42\;mm^2$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 하계학술대회 논문집
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• pp.233-237
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• 1991

In the study, samples were made on the electrode in internal glass bell jar by the radio frequency discharge polymerization. The polymerization rate of samples was observed as a function of r.f. discharge power. The characteristics of polymers obtained from TMDSO and HMDSO were analyzed by FT-IR and TGA, and their electrical properties were examined on insulation resistivity, breakdown voltage, dielectric constant, and tan ${\delta}$. (1) There was no difference between PPTMDSO and PPHMDSO in a polymerization rate and thermal and electrical properties. (2) The growing rates of thin film with discharge powers were from $0.42{\mu}/h$ to $1.2{\mu}m/h$. (3) According to IR spectra analysis, discharge power did not effect polymer structure due to polyermization mechanism and effected only polymerization rate. (4) PPTMDSO and PPHMDSO were thermally resistive polymers which did not decompose to $300^{\circ}C$.

• 한국컴퓨터산업학회논문지
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• 제4권4호
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• pp.579-588
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• 2003

지중전선로에 있어서 케이블을 연결하는 중간 접속재에 발생하는 전계 집중, 각종 불순물의 침투 및 케이블 절연층의 손상은 궁극적으로 열화 및 절연파괴를 야기하게 되어 케이블의 수명을 단축시키고 있다. 본 연구에서는 경계요소법을 이용하여 초고압 케이블 절연재료로 널리 사용되고 있는 가교폴리에틸렌과 접속재 키트의 절연층으로 사용되고 있는 EPDM의 전계분포를 시뮬레이션 하였다. 시료는 두께 1[mm]로 3장을 중첩한 것으로 모델링하여 컴퓨터 시뮬레이션을 하였다. 전계해석 결과 보이드 내부의 defect는 silicone oil에 의해 전계집중을 약화시킴을 확인하였고, XLPB보다 EPDM의 전계분포가 낮게 유지됨을 확인하였다.

• 전자공학회논문지A
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• 제30A권10호
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• pp.59-66
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• 1993

PZT thin film deposited by rf magnetron sputtering was annealed by rapid thermal process(RTP) in PbO ambient to prevent vaporing of Pb and interface reactions. Si and TiN/Ti/Si substrates were prepared to survey application of TiN/Ti layer which can prevent interface interaction with Si and crack of PZT thin films. As temperature increased. PZT thin films surface on Si substrate appeared more severe cracks which should affect electrical properties deadly. TiN/Ti(40-150${\mu}{\Omega}{\cdot}cm$) layer applied for buffer layer suppressed interface interaction and film cracking. The measured leakage current(LC) and breakdown voltage(BV) of PZT thin film on TiN/Ti/Si substrate annealed at 650$^{\circ}$C for 15 sec (thickness of 2500$\AA$) were 38 nA/cm2 and 3.5 MV/cm and dielectric constant was 310 at 1 MHz, and remanent polarization (Pr) and coercive field (Ec) were 6.4${\mu}C/cm^{2}$ and 0.2MV/cm at 60 Hz, respectively.

• 한국세라믹학회지
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• 제30권6호
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• pp.510-516
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• 1993

$PbTiO_3$ thin films have been formed by rapid thermal annealing(RTA) of $TiO_2$/Pb/$TiO_2$ multilayer films deposited on Si wafers by RF sputtering. Based on the optimal depositon conditions of TiO2 and Pb, $TiO_2$/Pb/$TiO_2$ three layers were deposited for 900$\AA$ each. These films were subjected to RTA process at the temperatures ranging from $400^{\circ}C$ to $900^{\circ}C$ for 30 seconds in air, and were analyzed by X-ray diffraction and transmission electron microscopy to investigate the phases and the microstructures. As a result, perovskite $PbTiO_3$ phases was obtained above $500^{\circ}C$ with the trace of unreacted $TiO_2$. RBS analysis revealed the anisotropic behavior of diffusion that the diffusivity of Pb to the bottom $TiO_2$ layer was faster than that of Pb to the top $TiO_2$ layer. The amorphous Pb-silicate was formed between film and Si substrate due to the diffusion of Pb, but Pb-silicate existed locally at the interface and the amount of that phase was very small. Therefore the effect of bottom $TiO_2$ layer as a diffusion barrier was confirmed. $PbTiO_3$ films formed by current technique showed a relative dielectric constant of 60, and the maximum breakdown field reached 170kV/cm.

• Journal of Information Display
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• 제11권4호
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• pp.165-168
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• 2010

A solution-processed multicomponent oxide, yttrium hafnium zinc oxide (YHZO), was synthesized and deposited as a gate insulator. The YHZO film annealed at $600^{\circ}C$ contained an amorphous phase based on the results of thermogravimetry, differential thermal analysis, and X-ray diffraction. The electrical characteristics of the YHZO film were analyzed by measuring the leakage current. The high dielectric constant (16.4) and high breakdown voltage (71.6 V) of the YHZO films resulted from the characteristics of $HfO_2$ and $Y_2O_3$, respectively. To examine if YHZO can be applied to thin-film transistors (TFTs), indium gallium zinc oxide TFTs with a YHZO gate insulator were also fabricated. The desirable characteristics of the YHZO films when used as a gate insulator show that the limitations of the general binary-oxide-based materials and of the conventional vacuum processes can be overcome.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.309-313
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• 2006

We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below $200^{\circ}C$. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over $20cm^2/Vsec$ was fabricated on transparent plastic substrate and drived OLED display successfully.