• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.715-718
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• 2000

We studied about electrical, chemical and mechanical characteristics of XLPE by dicumyl peroxide(DCP) and trimethylolpropane triacrylate(TMPTA) content ratio. DCP content was changed from 1.0 to 2.Sphr increasing 0.5phr. TMPTA content was changed 0.5 to 1.5phr increasing 0.5phr. Thermal analysis (DSC) was carried out in order to observe tendency of Tg according to DCP and TMPTA content. Tensile strength was measured in order to observe mechanical strength. In experimental results, content DCP 2.0phr and TMPTA 1.0phr has highest breakdown strength. Content DCP 2.0phr and TMPTA 0.5phr has lowest dielectric constant. Tendency of Tg did not affected by DCP and TMPTA content. Breakdown strength and Specific inductive capacity was measured.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.467-468
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• 2009

• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 2008.11a
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• pp.465-470
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• 2008

This paper introduces experimental investigates of an electrical accident of the distributing cable termination with simulated badness construction. We prepared two termination kites, one is built-up type, the other is heat contraction type. Also, we manufactured cable termination that have simulated defect by badness construction and measured their insulation characteristics such as ac (35kV, 1min) and impulse (95kV, $1.2{\times}50{\mu}s$) withstand test. The influence of defects such as thickness and the gap between stress-con of housing and semi-conductor on insulating properties of the termination have been studied. The thickness decrease of insulator decreases ac breakdown strength. Dielectric breakdown traces of insulator that is damaged by knife displayed other shape. The gap of between housing and semiconductor deteriorates dielectric strength of insulator seriously.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.67-71
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• 2001

PT of epoxy mold type have tendency to occur dielectric breakdown in high voltage system. These are using for measurement of voltage or protection of system and application voltage is 25.8kV. Therefore, for improving a lots of problems like as partial discharge, we had analyze on the destroyed Epoxy molded type PT and processing of production. As a results, we concluded that the reason of dielectric breakdown was defect of processing and degradation of insulation by electrical stress. In this work, We presented a method of solution in processing of production. which is reduction of the PO which was occurred at the insulation material. so we must many try to remove faults, these problems are mainly to winding methods of 1st coil. the other side, Reformation of 1st coil improved property of PD and we could prove it with experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.494-498
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• 2002

HTS transformer experimentally. High temperature superconductors can only be applied against an engineering specification that has to be determined for each particular application form the design requirements for economic viability and for operation margins in service. High temperature superconducting(HTS) power apparatus are very promising candidates for application. Especially, these advantages make superconducting transformers very promising candidates for application in electrical power engineering and locomotives. In order to realize the HTS transformer, it is necessary to establish the high voltage insulation technique in cryogenic temperature. So far, insulation research of Pancake type HTS transformer is lacking nothing but insulation research of . solenoid type transformer consisted. Therefore, the composite insulation of double pancake coil type transformer are described and ac breakdown voltage characteristics of liquid nitrogen(LN$_2$) under HTS pancake coil electrode made by Bi-2223/Ag are studied. Breakdown in LN$_2$ is dominated electrode shape and distance. The relation between surface flashover voltage is considered for FRP. This research presented basis information of electrical insulation design for double pancake coil type HTS transformer.

• Progress in Superconductivity and Cryogenics
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• v.14 no.2
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• pp.28-31
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• 2012

The study on the dielectric characteristics of gaseous insulation medium is important for designing current leads of superconducting machines using a sub-cooled liquid nitrogen ($LN_2$) cooling method. In a sub-cooled $LN_2$ cooling system, the temperature of gaseous insulation medium surrounding current leads varies from the temperature of coolant to 300 K according to the displacement between the electrode system and the surface of sub-cooled $LN_2$. In this paper, AC withstand voltage experiments on gaseous nitrogen according to temperature are conducted. Also, AC withstand voltage experiments on gaseous nitrogen according to pressure, size of electrode, and gap length between two electrodes are performed. It is found that there is a functional relation between the electrical breakdown voltage and the field utilization factor (${\xi}$). As a result, the empirical formula for estimating an electrical breakdown voltage is deduced by adopting the concept of field utilization factors. It is expected that the experimental results presented in this paper are helpful to design current leads for a high voltage superconducting apparatus such as a superconducting fault current limiter (SFCL) using a sub-cooled $LN_2$ cooling system.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1136-1137
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• 2015

The accelerated thermal aging of chlorosulfonated polyethylene (CSPE) was performed for 0 days, 80.82 days, and 161.63 days at $100^{\circ}C$, which is equivalent to 0y, 40y, and 80y of aging, respectively, at $50^{\circ}C$. The volume electrical resistivity of dried CSPE for 570~630 days after seawater and freshwater soaking, are $1.109{\times}10^{14}{\Omega}{\cdot}cm$, $8.546{\times}10^{13}{\Omega}{\cdot}cm$ and $8.466{\times}10^{13}{\Omega}{\cdot}cm$. The applied voltage rising time of 11~12 second and dielectric breakdown time of 9~11 second of the accelerated thermal aged CSPE is shorter than those of 12~13 and 11~13 second of the non-accelerated thermal aged CSPE, respectively. It is shown that oxidation, fragment and crack are formated at hole of dielectric breakdown in CSPE. The apparent density of dried CSPE for 750 days are $1.555g/cm^3$, $1.595g/cm^3$ 및 $1.597g/cm^3$ according to accelerated thermal aging year, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.270-273
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• 2001

Electrical tree is studied widely by manufacture state of insulating material fare and blazing fire diagnosis system of use in phenomenon of part discharge that happen for main cause of dielectric breakdown of equipment for electric power. Use process that draw tree pattern here measuring above zero to study special quality of this electricity tree, real-time processing by image processing is proposed because reproduction of tree blazing fire process drops and pattern of tree is difficult correct quantification of tree growth by existent visual observation by involution. This research presents general process that need in image processing of tree blazing fire, and that remove various noises that happen in above zero by measuring electrical tree dividing background and complete view in measured above zero taking advantage of specially proposed complete view object abstraction techniques effectively and quantification of tree becomes easy naturally, can apply to dielectric breakdown estimate because can chase growth process of tree.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.57-63
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• 1994

Aluminum oxide($Al_2{O_3}$) offers some unique advantages over the conventional silicon dioxide( $SiO_{2}$) gate insulator: greater resistance to ionic motion, better radiation hardness, possibility of obtaining low threshold voltage MOS FETs, and possibility of use as the gate insulator in nonvolatile memory devices. We have undertaken a study of the dielectric breakdown of $Al_2{O_3}$ on Si deposited by GAIVBE technique. In our experiments, we have varied the $Al_2{O_3}$ thickness from 300.angs. to 1400.angs. The resistivity of $Al_2{O_3}$ films varies from 108 ohm-cm for films less than 100.angs. to 10$_{13}$ ohm-cm for flims on the order of 1000.angs. The flat band shift is positive, indicating negative charging of oxide. The magnitude of the flat band shift is less for negative bias than for positive bias. The relative dielectric constant was 8.5-10.5 and the electric breakdown fields were 6-7 MV/cm(+bias) and 11-12 MV/cm (-bias).

• Journal of Korea Game Society
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• v.13 no.4
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• pp.35-46
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• 2013

In this paper, we show a real-time lightning simulation for smart device game. Our proposed method uses physically based Dielectric Breakdown Model to similar real world lightning path and we simplify the algorithm for real-time simulation in smart device. In addition, the rendering process can render multiple lightning and can real-time render in smart device. Finally, our lightning can support interactive with user. The simulation method will be effectively useful for a game that needs a real-time simulation as its game element in smart device environment.