• 제목/요약/키워드: dielectric breakdown

검색결과 648건 처리시간 0.021초

Laser CVD에 의한 SiON막의 형성과 그 특성 (The Formation and Characteristics of Laser CVD SiON Films)

  • 권봉재;박종욱;천영일;이철진;박지순;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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    • pp.241-244
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    • 1991
  • In this paper, we introduced Silicon Oxynitride films deposited by Laser CVD, and evaluated the electrical breakdown of these films by TZDB(Time Zero Dielectric Breakdown) and TDDB(Time Dependent Dielectric Breakdown) test. In addition, high frequency C-V test was done in order to calculate hysterisis and flatband voltage(before and after electric field stress). Failure times against eletric field are examined and electric field accelation factor $\beta$ are obtained, and long term reliability was also described by extrapolating into life time in the operating voltage(5V). In this experiments, the deposited films with increased temperature represented small flatband voltage, hysterisis and favorable breakdown characteristics, this is why the hydrogen in the film was decreased and the film was densified, long term reliability was good in the laser CVD SiON films.

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절연 파괴 특성을 이용한 에폭시 복합체의 절인 신뢰도 평가 (Evaluation of Insulating Reliability in Epoxy Composites by Dielectric Breakdown Properties)

  • 신철기;김용연;심재환;박건호;이준웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 추계학술대회 논문집
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    • pp.310-312
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    • 1995
  • In order to evaluate insulating reliability in epoxy composites, breakdown data were experimented in the temperature range of 20[$^{\circ}C$]∼160[$^{\circ}C$]. From these data, various parameters which are used in Weibull distribution could be derived, and using them, the reliability on a breakdown probability was calculated.

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Back-bias 효과에 의한 SOI소자의 항복전압 특성. (The Back-Bias Effect on the Breakdown Voltage of SOI Device)

  • 김한수;최연익;한민구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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    • pp.178-180
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    • 1993
  • The back bias effect on the breakdown voltage of SOI $p^+$-n diode is investigated. The breakdown voltage of the SOI $p^+$-n diode increases with the applied back bias. When the cathode electrode is used as a back bias, it is necessary to put the dielectric material between the Si-substrate and the bottom cathode electrode.

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XLPE/EPOM 계면의 전기적 특성 (Electrical Characteristics on the Interface between XLPE/EPDM)

  • 한성구;조정형;이창종;김종석;서광석;박대희;한상옥
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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    • pp.235-238
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    • 1996
  • In this paper, We intended to evaluate the characteristics of XLPE/EPDM interface which exists in the cable joint. The fault was mainly occurred in this interface. Thus we looked into the electrical characteristics through the conduction current and the breakdown test. Through from the experiment, we obtained the result that the conduction current in this interface flowed less than other dielectric materials, that the breakdown strength was higher and that the pressure dependance ㅐf the breakdown strength was higher.

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Laser CVD절연막의 전기전도와 절연파괴특성 (The eletrical conduction and breakdown characteristics of thin films by Laser CVD)

  • 강희복;권봉제;김용우;김성진;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1991년도 하계학술대회 논문집
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    • pp.191-193
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    • 1991
  • In this paper, we introduce silicon dioxide films deposited by Laser CVD, and evaluate the breakdown characteristics of these films by TZDB(Time Zero Dieiectric Breakdown) and TDDB(Time Dependent Dielectric Breakdown) test, failure times against eletric field are examined and accelation factors ${\beta}$ are obtained, and also, long term reliability is described by examining TDDB under positive voltage bias, all the above results are compared with PECVD(Plasma Enhanced CVD) $SiO_2$ breakdown, data, as a result, it is shown that the breakdown characteristics of Laser CVD $SiO_2$ films is improved.

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실리콘 다층절연막의 전기전도 특성 (The electrical conduction characteristics of the multi-dielectric silicon layer)

  • 정윤해;한원열;박영걸
    • E2M - 전기 전자와 첨단 소재
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    • 제7권2호
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    • pp.145-151
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    • 1994
  • The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.

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Investigation on the Dielectric, Physical and Chemical Properties of Palm Oil and Coconut Oil under Open Thermal Ageing Condition

  • Mohamad, Nur Aqilah;Azis, Norhafiz;Jasni, Jasronita;Kadir, Mohd Zainal Abidin Ab;Yunus, Robiah;Ishak, Mohd Taufiq;Yaakub, Zaini
    • Journal of Electrical Engineering and Technology
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    • 제11권3호
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    • pp.690-698
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    • 2016
  • In this paper, a study is carried out to investigate the dielectric, physical and chemical properties of Palm Oil (PO) and Coconut Oil (CO) under open thermal ageing condition. The type of PO used in this study is Refined Bleached and Deodorized Palm Oil (RBDPO) Olein. The ageing experiment was carried out at 85 ℃ and 115 ℃ for 1, 3, 5, 7 and 14 days. Several parameters were measured such as AC breakdown voltage, dielectric dissipation factor, relative permittivity, resistivity, viscosity, moisture and acidity throughout the ageing duration. Based on the study, it is found that there are no significant changes on the AC breakdown voltages and relative permittivities for both RBDPO and CO. At ageing temperature of 115℃, there are clear reduction trends of dielectric dissipation factor for CO and resistivities for most of RBDPO. On the other hand, no clear trends are observed for viscosities, moisture and acidities of RBDPO and CO throughout the ageing duration.

고차구조 변화에 따른 저밀도폴리에틸렌 박막의 전기적 특성 (Electrical Properties of Low Density Polyethylene Film by Superstructure Change)

  • 신종열;신현택;이수원;홍진웅
    • 한국안전학회지
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    • 제17권4호
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    • pp.101-109
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    • 2002
  • The electrical properties of polyethylene are changed by the superstructure. Such crystalline polymer as polyethylene or polypropylene changes crystallinity and products spherulite or trans-crystal when it is cooled slowly. In this study, after thermal treatment of LDPE at 100[${circ}C$], in silicone oil for an hour, we made specimens in order of slow cooling, water cooling, quenching according to cooling speed. Also, to study the influence of electrical properties due to the superstructure change, we analyzed physical properties and performed dielectric breakdown experiments using DC and impulse voltage Moreover we measured space charges in bulk using Laser Induced Pressure Pulse(LIPP) method. Trap level of specimen is 0.064[eV] at the low temperature region 0.31[eV] at the high temperature region in DC dielectric strength, 0.03[eV] at the low temperature region 0.0925[eV] at the high temperature region in impulse dielectric strength. As its result shows that the quantity of charges induced from the electrode surface increases with applied voltage time, and the distribution of space charges in samples increases the quantity of charges in proportion to applied voltage.

AC Breakdown Voltage and Viscosity of Palm Fatty Acid Ester (PFAE) Oil-based Nanofluids

  • Mohamad, Mohd Safwan;Zainuddin, Hidayat;Ab Ghani, Sharin;Chairul, Imran Sutan
    • Journal of Electrical Engineering and Technology
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    • 제12권6호
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    • pp.2333-2341
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    • 2017
  • Mineral oils are commonly used as transformer insulation oils but these oils are obtained from non-renewable and non-sustainable sources, which is highly undesirable. For this reason, natural ester oils are now being used in replacement of mineral oils because of their good biodegradability, high cooling stability, good oxidation stability and excellent insulation performance. Nanotechnology has gained prominence in both academic and industrial fields over the years and it has been shown in previous studies that nanoscale materials are useful for transformers due to their favourable dielectric properties. The objective of this study is to compare the AC breakdown voltage and viscosity of natural ester oil with three types of nanofluids. The natural ester oil-based nanofluids are prepared by mixing palm fatty acid ester (PFAE) oil with three types of nanoparticles at a concentration of 0.01 g/l: (1) $Fe_3O_4$ conductive nanoparticles, (2) $TiO_2$ semi-conductive nanoparticles and (3) $Al_2O_3$ insulating nanoparticles. The AC breakdown voltage of the oil samples is analysed using Weibull statistical analysis and the results reveal that the PFAE oil-based $Fe_3O_4$ nanofluid gives exceptional dielectric performance compared to other oil samples, whereby the AC breakdown voltage increases by 43%. It can be concluded that the PFAE oil-based $Fe_3O_4$ nanofluid is a promising dielectric liquid to substitute mineral oils.

외부전극 헝광램프의 핀홀 현상 (Pinhole Phenomena in the External Electrode Fluorescent Lamps)

  • 길도현;김상범;송혁수;유동근;이상훈;박민순;강준길;조광섭;조미령;황명근;김영욱
    • 한국진공학회지
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    • 제15권3호
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    • pp.266-272
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    • 2006
  • 외부전극 형광램프의 구동에서 과도한 전력을 인가하면, 외부전극 부분의 유리관 표면에 작은 원형의 구멍(핀홀)이 발생하여 램프가 파손된다. 핀홀은 외부전극과 유리관을 유전층으로 하는 캐패시터의 절연파괴이며, 이러한 절연파괴력은 인가되는 전력에 비례한다. 유전상수가 K인 램프에 흐르는 전류가 작을 때, 핀홀이 발생하는 유리관의 절연파괴 전기장의 세기는 약 3K kV/mm,이다. 이러한 절연파괴 전기장의 세기는 램프에 흐르는 전류가 커질수록 작아진다.