• Title/Summary/Keyword: die bonding

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A study on the molding of dome shaped plastic parts embedded with electronic circuits (전자회로 일체형 돔 형상의 플라스틱 부품 성형에 관한 연구)

  • Seong, Gyeom-Son;Lee, Ho-Sang
    • Design & Manufacturing
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    • v.14 no.1
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    • pp.15-21
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    • 2020
  • Smart systems in different application areas such as automotive, medical and consumer electronics require a novel manufacturing method of electronic, optical and mechanical functions into products. Traditional methods including mechanical assembly, bonding of plastic and electronic circuit cause the problems in large size of products and complicated manufacturing processes. In this study, thermoforming and film insert molding were applied to fabricate a dome shaped plastic part embedded with electronic circuits. The deformation of patterns printed on PET film was predicted by thermoforming simulation using T-SIM, and the results were compared with those by experiment. In order to decrease spring-back after thermoforming, the Taguchi method of design of experiment was used. Through ANOVA analysis, it was found that mold temperature was the most dominant parameter for spring-back. By using flow analysis, gate design was performed to decrease injection pressure. During film insert molding, the wash-out of ink printed on film occurred for Polycarbonate. When the resin was changed to PMMA, the wash-out disappeared due to low melt temperature.

TSV Filling Technology using Cu Electrodeposition (Cu 전해도금을 이용한 TSV 충전 기술)

  • Kee, Se-Ho;Shin, Ji-Oh;Jung, Il-Ho;Kim, Won-Joong;Jung, Jae-Pil
    • Journal of Welding and Joining
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    • v.32 no.3
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    • pp.11-18
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    • 2014
  • TSV(through silicon via) filling technology is making a hole in Si wafer and electrically connecting technique between front and back of Si die by filling with conductive metal. This technology allows that a three-dimensionally connected Si die can make without a large number of wire-bonding. These TSV technologies require various engineering skills such as forming a via hole, forming a functional thin film, filling a conductive metal, polishing a wafer, chip stacking and TSV reliability analysis. This paper addresses the TSV filling using Cu electrodeposition. The impact of plating conditions with additives and current density on electrodeposition will be considered. There are additives such as accelerator, inhibitor, leveler, etc. suitably controlling the amount of the additive is important. Also, in order to fill conductive material in whole TSV hole, current wave forms such as PR(pulse reverse), PPR(periodic pulse reverse) are used. This study about semiconductor packaging will be able to contribute to the commercialization of 3D TSV technology.

Analytical evaluation and study on the springback according to the cross sectional form of 1.2GPa ultra high strength steel plate (1.2GPa급 초고강도강판의 단면 형태에 따른 스프링백에 관한 해석적 평가 및 연구)

  • Lee, Dong-Hwan;Han, Seong-Ryeol;Lee, Chun-Kyu
    • Design & Manufacturing
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    • v.13 no.4
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    • pp.17-22
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    • 2019
  • Currently, studies on weight reduction and fuel efficiency increase are the most important topics in the automotive industry and many studies are under way. Among them, weight reduction is the best way to raise fuel efficiency and solve environmental pollution and resource depletion. Materials such as aluminum, magnesium and carbon curing materials can be found in lightweight materials. Among these, research on improvement of bonding technology and manufacturing method of materials and improvement of material properties through study of ultrahigh strength steel sheet is expected to be the biggest part of material weight reduction. As the strength of the ultra hight strength steel sheet increases during forming, it is difficult to obtain the dimensional accuracy as the elastic restoring force increases compared to the hardness or high strength steel sheet. It is known that the spring back phenomenon is affected by various factors depending on the raw material and processing process. We have conducted analytical evaluations and studies to analyze the springback that occurs according to the cross-sectional shape of the ultra high tensile steel sheet.

Fatigue Assessment Using SPR and Adhesive on Dissimilar Materials (SPR 과 접착제를 이용한 이종재료 접합의 피로평가)

  • Kim, Tae-Hyun;Suh, Jeong;Kang, Hee-Shin;Lee, Young-Shin;Park, Chun-Dal
    • Journal of the Korean Society for Precision Engineering
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    • v.28 no.10
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    • pp.1204-1209
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    • 2011
  • In this study, fatigue life is evaluated by comparing with lighter car body through the experiment on SPR joints. An experimental activity on sheet metal samples of Aluminum 5J32 and Steel SPRC440 has been conducted to achieve better understanding of the process. In addition, SPR joint used less than the existing Spot Welding improves joint strength and fatigue life is evaluated by using SPR and adhesive joining Hybrid. Joining(bonding) strength and fatigue life on SPR and Hybrid (SPR + adhesive) are evaluated throughout the experiment. With joining strength than 20 % of the aluminum material, dissimilar materials has improved over 2 times as large as the strength In case of dissimilar materials, the fatigue life of aluminum is increased by 1.6 to 2.5 times as large as the life.

Effect of Surface Finish on Mechanical and Electrical Properties of Sn-3.5Ag Ball Grid Array (BGA) Solder Joint with Multiple Reflow (Sn-3.5Ag BGA 패키지의 기계적·전기적 특성에 미치는 PCB표면 처리)

  • Sung, Ji-Yoon;Pyo, Sung-Eun;Koo, Ja-Myeong;Yoon, Jeong-Won;Shin, Young-Eui;Jung, Seung-Boo
    • Korean Journal of Metals and Materials
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    • v.47 no.4
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    • pp.261-266
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    • 2009
  • The mechanical and electrical properties of ball grid array (BGA) solder joints were measured, consisting of Sn-3.5Ag, with organic solderability preservative (OSP)-finished Cu pads and Electroless Nickel/Immersion Gold (ENIG) surface finishes. The mechanical properties were measured by die shear test. When ENIG PCB was upper joint and OSP PCB was lower joint, the highest shear force showed at the third reflow. When OSP PCB was upper joint and ENIG PCB was lower joint, the highest shear force showed at the forth reflow. For both joints, after the die shear results reached the highest shear force, shear force decreased as a function of increasing reflow number. Electrical property of the solder joint decreased with the function of increasing reflow number. The scanning electron microscope results show that the IMC thickness at the bonding interface gets thicker while the number of reflow increases.

Control of Position of Neutral Line in Flexible Microelectronic System Under Bending Stress (굽힘응력을 받는 유연전자소자에서 중립축 위치의 제어)

  • Seo, Seung-Ho;Lee, Jae-Hak;Song, Jun-Yeob;Lee, Won-Jun
    • Journal of the Microelectronics and Packaging Society
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    • v.23 no.2
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    • pp.79-84
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    • 2016
  • A flexible electronic device deformed by external force causes the failure of a semiconductor die. Even without failure, the repeated elastic deformation changes carrier mobility in the channel and increases resistivity in the interconnection, which causes malfunction of the integrated circuits. Therefore it is desirable that a semiconductor die be placed on a neutral line where the mechanical stress is zero. In the present study, we investigated the effects of design factors on the position of neutral line by finite element analysis (FEA), and expected the possible failure behavior in a flexible face-down packaging system assuming flip-chip bonding of a silicon die. The thickness and material of the flexible substrate and the thickness of a silicon die were considered as design factors. The thickness of a flexible substrate was the most important factor for controlling the position of the neutral line. A three-dimensional FEA result showed that the von Mises stress higher than yield stress would be applied to copper bumps between a silicon die and a flexible substrate. Finally, we suggested a designing strategy for reducing the stress of a silicon die and copper bumps of a flexible face-down packaging system.

Wafer-Level Three-Dimensional Monolithic Integration for Intelligent Wireless Terminals

  • Gutmann, R.J.;Zeng, A.Y.;Devarajan, S.;Lu, J.Q.;Rose, K.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.3
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    • pp.196-203
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    • 2004
  • A three-dimensional (3D) IC technology platform is presented for high-performance, low-cost heterogeneous integration of silicon ICs. The platform uses dielectric adhesive bonding of fully-processed wafer-to-wafer aligned ICs, followed by a three-step thinning process and copper damascene patterning to form inter-wafer interconnects. Daisy-chain inter-wafer via test structures and compatibility of the process steps with 130 nm CMOS sal devices and circuits indicate the viability of the process flow. Such 3D integration with through-die vias enables high functionality in intelligent wireless terminals, as vertical integration of processor, large memory, image sensors and RF/microwave transceivers can be achieved with silicon-based ICs (Si CMOS and/or SiGe BiCMOS). Two examples of such capability are highlighted: memory-intensive Si CMOS digital processors with large L2 caches and SiGe BiCMOS pipelined A/D converters. A comparison of wafer-level 3D integration 'lith system-on-a-chip (SoC) and system-in-a-package (SiP) implementations is presented.

Planar Shock Wave Compaction of Oxidized Copper Nano Powders using High Speed Collision and Its Mechanical Properties (고속 충돌 시 발생하는 평면 충격파를 이용한 산화 나노 분말의 치밀화 및 기계적 특성 평가)

  • Ahn, Dong-Hyun;Kim, Wooyeol;Park, Lee Ju;Kim, Hyoung Seop
    • Journal of Powder Materials
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    • v.21 no.1
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    • pp.39-43
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    • 2014
  • Bulk nanostructured copper was fabricated by a shock compaction method using the planar shock wave generated by a single gas gun system. Nano sized powders, average diameter of 100 nm, were compacted into the capsule and target die, which were designed to eliminate the effect of undesired shock wave, and then impacted with an aluminum alloy target at 400 m/s. Microstructure and mechanical properties of the shock compact specimen were analyzed using an optical microscope (OM), scanning electron microscope (SEM), and micro indentation. Hardness results showed low values (approximately 45~80 Hv) similar or slightly higher than those of conventional coarse grained commercial purity copper. This result indicates the poor quality of bonding between particles. Images from OM and SEM also confirmed that no strong bonding was achieved between them due to the insufficient energy and surface oxygen layer of the powders.

Development of miniature weight sensor using piezoresistive pressure sensor (압저항형 압력센서를 이용한 초소형 하중센서의 개발)

  • Kim, Woo-Jeong;Cho, Yong-Soo;Kang, Hyun-Jae;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.14 no.4
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    • pp.237-243
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    • 2005
  • Strain gauge type load cell is used widely as weight sensor. However, it has problems such as noise, power consumption, high cost and big size. Semiconductor type piezoresistive pressure sensor is practically used in recent for low hysteresis, good linearity, small size, light weight and strong on vibration. In this paper, we have fabricated the piezoresistive pressure sensor and packaged the miniature weight sensor. We packaged the miniature weight sensor by flip-chip bonding between die and PCB for durability, because the weight sensor is directly contacted on a physical solid distinct from air and oil pressure. We measured the characteristics of the weight sensor, which had the output of $10{\sim}80$ mV on the weight range of $0{\sim}2$ kg. In the result, we could fabricate the weight sensor with an accuracy of 3 %FSO linearity.

Ag Sintering Die Attach Technology for Wide-bandgap Power Semiconductor Packaging (Wide-bandgap 전력반도체 패키징을 위한 Ag 소결 다이접합 기술)

  • Min-Su Kim;Dongjin Kim
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.1
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    • pp.1-16
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    • 2023
  • Recently, the shift to next-generation wide-bandgap (WBG) power semiconductor for electric vehicle is accelerated due to the need to improve power conversion efficiency and to overcome the limitation of conventional Si power semiconductor. With the adoption of WBG semiconductor, it is also required that the packaging materials for power modules have high temperature durability. As an alternative to conventional high-temperature Pb-based solder, Ag sintering die attach, which is one of the power module packaging process, is receiving attention. In this study, we will introduce the recent research trends on the Ag sintering die attach process. The effects of sintering parameters on the bonding properties and methodology on the exact physical properties of Ag sintered layer by the realization 3D image are discussed. In addition, trends in thermal shock and power cycle reliability test results for power module are discussed.