• International Journal of Internet, Broadcasting and Communication
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• 제16권1호
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• pp.176-181
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• 2024

The desktop-level 3D printing machines makes it easier for independent designers to produce collectible models. Desktop 3D printers that use FDM (Fused Deposition Modeling) technology usually use a minimum nozzle diameter of 0.4mm. When using FDM printers to make Gunpla models, Thin slice structures are prone to slicing errors, which lead to deformation of printed objects and reduction in structural strength. This paper aims to analyze the printing model that produces errors, control a single variable among the three variables of slice layer height, slice wall thickness and filament type for comparative testing, and find a way to avoid gaps. To provide assistance for using FDM printers to build models containing thin-walled structures.

• 한국정보통신학회논문지
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• 제13권12호
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• pp.2505-2510
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• 2009

SiOC 박막은 화학적 증착 방법에 의해 여러 가지 유량비를 다르게 하여 증착되었다. SiOC 박막에서 유전상수의 감소원인에 대하여 조사하고 샘플들은 박막의 두께와 유전상수사이의 상관성에 대하여 분석하였다. 증착한 샘플에서 박막의 두께는 굴절률에 비례하는 경향성이 있으며, 유전상수가 가장 낮은 샘플에서 두께는 감소되었다. 굴절률은 열처리 후 감소하였는데, 열처리 하면서 박막의 두께가 감소되었기 때문이다.

• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.518-523
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• 2002

The influences of ion beam energy and reactive oxygen partial pressure on the physical and crystallographic characteristics of transition metal oxide compound(CrOx) film were studied in this paper. Chromium oxide films were deposited onto a cover-glass using ion Beam Sputter Deposition(IBSD) technique according to the various processing parameters. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. According to the XRD, XPS and resistivity results, the deposited films were the cermet type films which had crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increment of the ion beam energy during the deposition process led to decreasing of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

• 한국표면공학회지
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• 제15권3호
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• pp.138-145
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• 1982

The effects of the simultaneous variations of the ratio of feed gases(H2/N2 Flow ratio), feed gas flow rate (H2/N2, total-flow rate) and partial pressures of TiCl4 (PTiCl41) as well as deposition time and cobalt content of the substrate on the deposition rate of the TiN Coated Cemented Tungsten Carbide Tools were investigated. Deposition was carried out in the temperature range of 930$^{\circ}C$-1080$^{\circ}C$ and an activation energy of 46.5 Kcal/mole can be calculated. Transverse rupture strength was noticeably reduced by the TiN coating on the virgin surfa-ce of Cemented Tungsten Carbide, the extent of which was decreased according to the coa-ting thickness. Microhardness value observed on the work was in the range of 1700∼2000kg/mm, which were in well agreement with the value of bult TiN. The wear resistance of TiN layers was performed by turning test and it was observed that crater and flank resistance remarkably enhanced by TiN coating.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.327-330
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• 2004

Laser aided direct metal deposition (LADMD) process offers the ability to make a metal component directly from 3-D CAD dimensions. A 3-D object can be formed by repeating laser cladding layer by layer. The key of the build-up mechanism is the effective control of powder delivery and laser power to be irradiated into the melt-pool. A feedback control system using optical sensors is introduced to control laser power and powder mass flow rate. Using H13 tool steel and $CO_2$ laser system, comprehensive analysis are executed to test the efficiency of the system. In addition, the dimensional characteristics of directed deposited material are investigated with the parameters of deposition thickness, laser power, traverse speed and powder mass flow rate.

• Bulletin of the Korean Chemical Society
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• 제32권12호
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• pp.4392-4396
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• 2011

Porous silicon with a complex network of nanopores is utilized for photoelectrochemical energy conversion. A novel electroless Pt deposition onto porous silicon is investigated in the context of photoelectrochemical hydrogen generation. The electroless Pt deposition is shown to improve the characteristics of the PS photoelectrode toward photoelectrochemical $H^+$ reduction, though excessive Pt deposition leads to decrease of photocurrent. Furthermore, it is found that a thin layer (< 10 ${\mu}m$) of porous silicon can serve as anti-reflection layer for the underlying Si substrate, improving photocurrent by reducing photon reflection at the Si/liquid interface. However, as the thickness of the porous silicon increases, the surface recombination on the dramatically increased interface area of the porous silicon begins to dominate, diminishing the photocurrent.

• 열처리공학회지
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• 제23권2호
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• pp.75-82
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• 2010

A new advanced combined PVD/CVD technique of DLC film deposition has been developed. Deposition of a DLC film was carried out using a pulsed carbon arc discharge in vapor hydrocarbon atmosphere. The arc plasma enhancing CVD process promotes dramatic increase in the deposition rate and decrease of compressive stress as well as improvement of film thickness uniformity compared to that obtained with a single PVD pulsed arc process. The optical spectroscopy investigation reveals great increase in radiating components of $C_2$ Swan system molecular bands due to acetylene molecules decomposition. AFM, Raman spectroscopy, XPS and nano-indentation were used to characterize DLC films. The method ensures obtaining a new superhard DLC nano-material for deposition of protective coatings onto various industrial products including those used in medicine.

• 한국응용과학기술학회지
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• 제14권1호
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• pp.89-93
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• 1997

In this research, ultra-thin films of organic charge transfer complex were deposited on to ordinary microscope slide-glass subtrates with a Langmuir-Blodgett technique. ${\pi}$-A isotherm characteristics of these complex were studied in order to find optimum conditions of deposition by varying temperature of subphase, compression speed, and spreading amount. Transfer ratio of these films were studied during the process of deposition. The UV-visible absorbance spectra of LB films were measured to find state of deposition by varing layer number. The observed optimum conditions of surface, pressure, spreading amount, and dipping speed for depositing LB films(Y-type) were 38m/Nm, $150{\mu}l$ and 5mm/min, respectively. Since the tansfer ratio is close to 100%, the monolayer on the subphase seems to be well transferred to the solid substrate. The thickness of the film was well-controlled as the UV-vis absorbance of films were changed linear according to the number of layers.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.151-152
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• 2009

We coated $TiO_2$ thin films on particles by a rotating cylindrical plasma chemical vapor deposition (PCVD) process and investigated the effects of various process variables on the morphology and growth of thin films. The polypropylene (PP) particles were rotated with the cylindrical PCVD reactor and they were coated with $TiO_2$ thin films uniformly by the deposition of thin mm precursors in the gas phase. The $TiO_2$ thin films were coated on the PP particles uniformly and the thickness of thin films almost proportional to the deposition time. The $TiO_2$ thin films grew more quickly on the PP particles with increasing rotation speed of the reactor. This study shows that a rotating cylindrical PCVD reactor can be a good method to coat high-quality $TiO_2$ thin films uniformly on particles.

• 열처리공학회지
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• 제5권2호
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• pp.95-102
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• 1992

In this study, we tried to describe the quantitative model of TiN film structure which was deposited by PECVD process. The macro-grain growth behavior was studied at the various deposition pressures and times. As a result, It was confirmed that TiN films had the typical Zone 1 structure, and macro-columnar grains were, without reference to the deposition pressure, grown ballistic type by the growth-death competition following the equation, $Y=aX^2$, approximately obtained by regression analysis. Also, the thickness and the crystallization of TiN thin films were increased, the chlorine contents were decreased according to the decreasing of deposition pressure.