• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.25-34
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• 1996

Yttria stabilized zirconia (YSZ) thin films were prepared by the electrochemical vapor deposition (EVD) method on the porous Al2O3 substrates which were fabricated by different substrate thickness and porosity. Film growth rates decreased with increase on the substrate thickness and porosity and obeyed a parabolic rate law. Activa-tion energy calculated from the parabolic rate onstants was 69.9 kcal/mol. With increase on the deposition time, monoclinic phase was appeared and then disappeared. YSZ penetrated deeply into substrates when the EVD temperature decreased. Electrical conductivity of the films was 0.09 S/cm at 100$0^{\circ}C$ similar to the value of YSZ single crystal.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.312-317
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• 1994

We studied the fabrication and electrical characteristics of high voltage hydrogenerated amorphous silicon thin film transistor using plasma enchanced chemical vapor deposition(PECVD). The device shows 2500${\AA}$ SiOS12T, 400-1500${\AA}$ a-Si tickness, 350V output voltage and 9.55${\times}$10S04T average on/off current ratio. We found that the leakage current of high voltage TFT occurred 0-70V drain voltage. As the leakage current depend on the a-Si thickness, the leakage current of high voltage TFT decreased by reduction of the a-Si thickness.

• Journal of the Korean Ceramic Society
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• v.28 no.3
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• pp.197-204
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• 1991

The photoelectrochemical conversion in SnO2 films deposited by spray pyrolysis using SnCl4-alcohol solution and N2 gas has been studied. The photocurrent increases with increasing deposition temperature up to 40$0^{\circ}C$ and then decreases, and the electron affinity decreases as the deposition temperature increases to 40$0^{\circ}C$. As the concentration of the spray solution increases, the photocurrent reaches a maximum value at the concentration of 0.05M, and the electron affinity is consistent. As the thickness of the film increases, the photocurrent increases with a maximum value at the thickness of 4600$\AA$, and electron affinity does not change.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.760-763
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• 2007

The properties of carbon nanotube obtained by thermal chemical vapor deposition (CVD) process were investigated as a function of ammonia $(NH_3)$ gas in hydrocarbon gas, Fe catalyst thickness, and growth temperature. Fe catalyst was prepared by DC magnetron sputter and pre-treated with ammonia gas. CNTs were then grown with ammonia-acetylene gas mixture by thermal CVD. The diameter of these CNTs shows a strong correlation with the gas rate, the catalyst film thickness and temperature. From our results, it was found that the factors of grown CNTs positively acted to improve CNT quality.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.327-333
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• 2002

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

• Journal of the Korean institute of surface engineering
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• v.37 no.1
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• pp.1-4
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• 2004

MoS$_2$-Ti films were deposited on SKD-11 tool steel substrate by a D.C. magnetron sputtering system. The influence of deposition parameters on the adhesion of the films was investigated by the scratch test. Crosssection morphology was evaluated using FE-SEM. The plasma etching played an important role on the adhesion of the films. The appropriate etching conditions roughened the surface, resulting In the improved adhesion of the film. The adhesion of the film increased with the interlayer thickness up to 110 nm and then decreased slightly with further increasing of interlayer thickness. The adhesion was highest at a bias voltage of -50 V. Further increase of the bias voltage decreased the film adhesion.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.687-690
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• 2004

The preparation of A1203-SiO2 thin films from less than one micron to several tens of microns in thickness had been Prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. For the preparation of thin, continuous A12O3-SiO2 films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.365-366
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• 2007

High quality cathode with high deposition rate of thin films and long target life time is required for manufacturing TFT-LCD and semiconductor. We developed WV(wide view) sputtering cathode with wide erosion area and high deposition rate. Ti thin film thickness variation in WV cathode is below 5% for 380 kWh target life time. Al thin film thickness using normal cathode is decreased about 20%. By using WV cathode, target using efficiency was improved 40%. in comparison with normal cathode.

• Journal of the Korean institute of surface engineering
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• v.27 no.5
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• pp.303-311
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• 1994

In this study, the factors, such as coating temperature T(K), reaction time t(sec) and mobile carbon content $C^*$ (wt%) of steels affecting, the growth rate of carbide layer were investigated in the reactive deposition and diffusion coating using the fluidized bed. From the results, the coating thickness d(cm) can be expressed by an equation. d=$C^*$$(KT)^{1/2}$, where K=K$\circ$exp(~Q/RT), KTEX>$\circ$ = 1.4$\times$$10^{-2}cm^{-2}$/sec, and Q=46Kcal/ mol. It was in a good aggrement with the experimental results, reguardless of the diffusion coating method and the carbide layer. Therefore, if the mobile carbon content of carbon steels and alloyed steels is known, the thickness under coating conditions can be predicted from the previous equation.

• Journal of the Korean institute of surface engineering
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• v.51 no.6
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• pp.400-404
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• 2018

A metal 3D printer has been developed on its own to electrodeposit the localized area. Nozzles were used to selectively laminate the electrolytic plating method. To analyze the factors affecting the deposition, the stack height, thickness and surface roughness were experimentally analyzed according to the current density and the temperature of the electrolyte. Electrolytic temperature and current are electrodeposited when the deposition conditions are dominant over the etching conditions, but the thickness is kept constant. On the contrary, when the etching conditions are dominant, the electrodeposited shape is rather the etched. As a result, the uniformity of surface quality and electrodeposition rate could be improved by conducting experiments under constant conditions of electrolyte temperature and current density.