• 한국응용과학기술학회지
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• 제17권1호
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• pp.29-35
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• 2000

In this study, ultra-thin films of (N-docosyl quinolinium)-TCNQ(1:2) complex were prepared on the hydrophilic substrate by Langmuir-Blodgett(LB) technique. The characteristics of ${\pi}-A$ isotherms were studied to find optimum conditions of deposition by varying temperature of subphase, compression speed of barrier and amount of spreading solution. Using UV-vis spectra, capacitance and thickness, deposition of LB films was confirmed together with the thickness of the naturally oxidized aluminum film inside a device and dielectric constant of (N-docosyl quinolinium)-TCNQ(1:2) complex. The dielectric constant of LB film was about $4.59{\sim}5.58$. The electrical properties of (N-docosyl quinolinium)-TCNQ(1:2) complex were investigated at room temperature. The conductivity of this film measured by the direction of either vertical or horizontal axis was found to have a quite different value.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.362-366
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• 2006

OLEDs(Organic Light Emitting Diodes) are attractive as alternative display components because of their relative merits of being self-emitting, having large intrinsic viewing angle and fast switching speed. But because of their relatively short history of development, much remains to be studied in terms of their basic device physics and design, manufacturing techniques, stability and so on. We investigated electrical properties of N, N-diphenyl-N, N bis (3-methyphenyl-l,1'-biphenyl-4,4'-diamine (TPD) and tris-8-hydroxyquinoline aluminum$(Alq_3)$ when their thicknesses were changed variedly from 3:7 to 5:5 of their thickness ratios. And we also studied properties of OLED depend on their deposition rate between $0.05{\sim}0.2$ nm/s.

• 한국재료학회지
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• 제13권5호
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• pp.309-312
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• 2003

Tin dioxide($_SnO2$) thin films were deposited on alumina substrate by metal-organic chemical vapor deposition (MOCVD) as a function of temperature and time. Thin films were fabricated from di-n-butyltin diacetate as a precursor and oxygen as an oxidation. The microstructure of deposited films was characterized by X-ray diffraction and field emission scanning electron microscopy(FE-SEM). The thickness was linearly increased with deposition time and $SnO_2$structure was found from $375^{\circ}C$ for the deposition time of 32 min. The maximum sensitivity to 500ppm CO gas was observed for the specimens deposited at $375^{\circ}C$ for 2 min at the operating temperature of $350^{\circ}C$. Gas sensitivity to CO increased with decreasing the film thickness. The sensing properties of response time, recovery and sensitivity of CO were changed with variations of substrate temperature and time.

• 대한조선학회논문집
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• 제44권5호
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• pp.482-487
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• 2007

The container mobilization of material resources has increased continually owing to international economy growth and overseas trade increase in recent years. There are large amounts of order received for container carriers which are the biggest in the world ranging from 8,000 TEU to 10,000 TEU or above The very large container carriers have minimum thickness of sheer strake, upper deck and hatch coaming about $65mm{\sim}90mm$. Therefore, this study is performed in order to develop vertical welding process with high deposition rates applicable to thick plate above 65mm thickness. Electrogas welding process with 1 pole and 2 poles has been developed to apply to vertical joint with thick plates in the shipyard. In this paper, it was explained that the relationship of cross section to various groove types and executed that electrogas welding for thick plates. The mechanical tests were carried out to verify the soundness and effectiveness of EGW.

• 한국자기학회지
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• 제22권4호
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• pp.147-156
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• 2012

최근 들어 박막의 원자층 두께를 정밀하게 제어하는 여러 가지 박막 성장 방법에 관한 관심이 높다. 그 중에서 원자층 두께를 조절할 수 있는 PLD 방법은 매우 폭넓은 관심을 받고 있다. 우리는 기존의 PLD 방법과 Reflection high energy electron diffraction(RHEED)을 이용하여 원자층 제어 PLD 방법을 구현하였다. 이러한 방법을 이용하여 산화물에서의 원자층 두께를 정밀하게 제어하는 방법에 관한 실험을 수행하였다. 이와 같은 실험방법이 가지는 다양한 조건을 제어하여 최소한의 결함을 가지고 결정의 화학적 조성에 근접하는 고품질의 박막을 구축하여 이를 바탕으로 다양한 실험을 수행하였다. 본 논문에서는 최근 이러한 박막을 이용한 우리의 실험결과와 타 그룹의 실험 동향을 정리하여 보았다.

• 한국표면공학회지
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• 제55권5호
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• pp.247-260
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• 2022

Since the first report on ferroelectricity in Si-doped hafnia (HfO2), this emerging ferroelectrics have been considered promising for the next-generation semiconductor devices with their characteristic nonvolatile data storage. The robust ferroelectricity in the sub-10-nm thickness regime has been proven by numerous research groups. However, extending their scalability below the 5 nm thickness with low temperature processes compatible with the back-end-of-line technology. In this review, therefore, the current status, technical issues, and their potential solutions of atomic layer deposition (ALD) of HfO₂-based ferroelectrics are comprehensively reviewed. Several technical issues in the physical scaling of the ferroelectric thin films and potential solutions including advanced ALD techniques including discrete feeding ALD, atomic layer etching, and area selective ALD are introduced.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.124.1-124.1
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• 2016

In this work, uniform thickness and good adhesion of electrodeposited copper layer were achieved on AZ91 Mg alloy in alkaline noncyanide copper solution containing pyrophosphate ion by employing appropriate zincate pretreatment. Without zincate pretreatment, the electrodeposited copper layer on AZ91 Mg alloy was porous and showed poor adhesion which was explained by small number of nucleation sites of copper due to rapid dissolution of the magnesium substrate in the pyrophosphate solution. The zincate pretreatment was found as one of the most important steps that can form a conducting layer to cover AZ91 surface which decreased the dissolution rate of AZ91 Mg alloy about 40 times in the copper pyrophosphate solution. Electrodeposited copper layer on AZ91 Mg alloy after an appropriate zincate pretreatment showed good adhesion and uniform thickness with bright surface appearance, independent of the deposition time but the surface roughness of the electrodeposited copper layer increased with increasing Cu deposition time.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.816-818
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• 1998

In this paper Polyimide(PI) thin film are fabricated by vapor deposition polymerization(VDP) of dry process which are easy to control the film's thickness and hard to pollute due to volatile solvent. The FT-IR spectrum show that PAA thin films fabricated by VDP are changed to PI thin film by thermal curing. From AFM(Atomic Force Microscopy) experimental as the higher curing temperature. the thin film thickness decreases and roughness decresse.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.207-210
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• 2007

We prepared Al doped ZnO/Ag/Al doped ZnO on the polymer substrate by Facing Target Sputtering (FTS). FTS featured Facing Target Sputtering featured that deposition is stable at the low pressure, it has high plasma density and suppresses the substrate damage from energetic particles. We fixed to 50nm up and down thickness of AZO layer, respectively and that of intermediate Ag layer was adjusted with deposition time. In the result, AZO/Ag/AZO multilayer thin films have much better electrical conductivity than AZO single layer thin film. As increasing the thickness of Ag layer, the transmittance decreased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1648-1650
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• 1996

In present paper, Cu films $4{\mu}m$, thick were fabricated by dual deposition methods using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adherence, and reflection in Cu films [$Cu_{4-x}$(low resistivity) / $Cu_x$(high adherence) / Si- wafer] on the x thickness have been investigated. Cu films of $4{\mu}m$ thickness formed with dual deposition methods had the low electrical resistivity of about $2.6{\mu}{\Omega}{\cdot}cm$ and high adherence of about 700g/cm. In conclusion, it is possible for these films to be used for micro-devices.