• Korean Journal of Materials Research
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• v.21 no.1
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• pp.34-38
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• 2011

In this study, the effects of an annealed buffer layer with different thickness on heterojunction diodes based on the ZnO/ZnO/p-Si(111) systems were reported. The effects of an annealed buffer layer with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films on p-Si(111) were also studied. Before zinc oxide (ZnO) deposition, different thicknesses of ZnO buffer layer, 10 nm, 30 nm, 50 nm and 70 nm, were grown on p-Si(111) substrates using a radio-frequency sputtering system; samples were subsequently annealed at $700^{\circ}C$ for 10 minutes in $N_2$ in a horizontal thermal furnace. Zinc oxide (ZnO) films with a width of 280nm were also deposited using a radio-frequency sputtering system on the annealed ZnO/p-Si (111) substrates at room temperature; samples were subsequently annealed at $700^{\circ}C$ for 30 minutes in $N_2$. In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray diffraction), and room temperature PL (photoluminescence) measurements, respectively. Current-voltage (I-V) characteristics were measured with a semiconductor parameter analyzer. The thermal tensile stress was found to decrease with increasing buffer layer thickness. Among the ZnO/ZnO/p-Si(111) diodes fabricated in this study, the sample that was formed with the condition of a 50 nm thick ZnO buffer layer showed a strong c-axis preferred orientation and I-V characteristics suitable for a heterojunction diode.

• Proceedings of the Korean Geotechical Society Conference
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• 2006.03a
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• pp.414-423
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• 2006

Many construction projects adopt grouting technology to prevent the leakage of groundwater or to improve the shear strength of the ground. Recognition as a feasible field procedure dates back to 1925, Since then, developments and field use have increased rapidly. According to improvement of grout materials, theoretical study on grout penetration characteristics is demanded. Fluid of grout always tends to flow from higher hydraulic potential to lower and the motion of grout is also a function of formation permeability. Viscosity of grout is changed by chemical action while grout moves through pores. Due to the increment of viscosity, permeability is decreased. Permeability is also reduced by grout particle deposits to the soil aggregates. In this thesis, characteristics of new cement grout material that is developed recently is studied: injectable volume of new grout material is tested in two different sizes of sands, and the method to calculate injectable volume of grout is suggested with consideration of change in viscosity and clogging phenomena. The calculated values are compared with injection test results. Viscosity of new grout material is found to be an exponential function of time. And lumped parameter $\theta$ of new grout material to be used for assessing deposition characteristics is estimated by comparing deposit theory with injection test results considering different soil types and different injection pressure.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.135-135
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• 1999

It is well known that Raman spectroscopy is powerful tool in analysis of sp3/sp3 bonding fraction in diamond-like carbon(DLC) films. Raman spectra of DLC film is composed of D-peak centered at 1350cm-1 and G-peak centered at 1530cm-1. The sp3/sp3 fraction is qualitatively acquired by deconvolution method. However, in case of DLC film, it is generally observed that G-peak position shifts toward low wavenumber as th sp3 fraction increases. However, opposite results were frequently observed in ta-C films. ta-C film has much higher residual compressive stress due to its high sp3 fraction compared to the DLC films deposited by CVD method. Effect of residual stress on G-peak position is most recommendable parameter in Raman analysis of ta-C, due to its smallest fitting error among many parameters acquired by peak deconvolution of symmetric spectra. In current study, the effect of residual stress on Raman spectra was quantitatively evaluated by free-hang method. ta-C films of different residual stress were deposited on Si-wafer by modifying DC-bias voltage during deposition. The variation of the G-peak position along the etching depth were observed in the free-hangs of 20~30${\mu}{\textrm}{m}$ etching depth. Mathematical result based on Airy stress function, was compared with experimental results. The more reliable analysis excluding stress-induced shift was possible by elimination of the Raman shift due to residual compressiove stress.

• Journal of Welding and Joining
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• v.28 no.5
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• pp.51-57
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• 2010

Brittle microstructure created in a heat affected zone (HAZ) during the welding of low alloy steel can be eliminated by post-weld heat treatment (PWHT). If the PWHT is not possible during a repair welding, the controlled bead depositions of multi-pass welding should be applied to obtain tempering effect on the HAZ without PWHT. In order to anticipate and control the tempering effect during the temper bead welding, the definition of temperature curve obtained from the analytical solution was suggested in this research. Because the analytical solution for heat flow is expressed as a mathematical equation of weld parameters, it may be effective in anticipating the effect of each weld parameter on the tempering in HAZ during the successive bead depositions. The reheating effect by the successive bead layer on the brittle coarse grained HAZ formed by earlier bead deposition was estimated by comparing the overlapped distance between the temperature curves in the HAZ. Three layered weld specimens of SA508 base metal with A52 filler were prepared by controlling heat input ratio between layers. The tempering effect anticipated by using the overlapped distance between the temperature curves was verified by measuring the micro-hardness distribution in the HAZ of prepared specimens. The temperature curve obtained from analytical solution was expected as a good tool to find optimal temper bead welding conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.254-254
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• 2011

The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with $n^+$ poly-Si source/drain in which the length and width are 10 ${\mu}m$ each. Then, a poly-amic-acid (PAA) was spin coated on the deposited Sn film. The PAA precursor used in this study was prepared by dissolving biphenyl-tetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid in N-methyl-2-pyrrolidon (NMP). Then the samples were cured at 400$^{\circ}C$ for 1 hour in N atmosphere after drying at 135$^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was followed by using a thermal evaporator, and then the gate electrode was defined by photolithography and etching. The electrical properties were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. Also, the optical pulse for the study on photo-induced electrical properties was applied by Xeon lamp light source and a monochromator system.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.279-279
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• 2011

나노 입자를 이용한 비휘발성 메모리 소자의 전기적 특성 향상을 위하여 일함수가 Si 보다 큰 금속, 금속산화물, 금속 실리사이드 나노입자를 이용한 다양한 형태의 메모리 구조가 제안되어져 왔다.[1] 특히 이와 같은 나노 부유 게이트 구조에서 터널 절연막의 구조를 소자의 동작 속도를 결정하는데 이는 터널링 되어 주입되는 전자의 확률에 의존하기 때문이다. 양자 우물에 국한된 전하가 누설되지 않으면서 주입되는 전자의 터널링 확률을 증가시키기 위하여, dielectric constant 와 barrier height를 고려한 다양한 구조의 터널 절연막의 형태가 제안 되었다.[2-3] 특히 낮은 전계에서도 높은 터널링 확률은 메모리 소자의 동작 속도를 향상시킬 수 있다. 본 연구에서는 n형 Si 기판위에 Si3N4 및 HfAlO를 각각 1.5 nm 및 3 nm 로 atomic layer deposition 방법으로 증착하였으며 3~5 nm 지름을 가지는 $TiSi_2$ 및 $WSi_2$ 나노 입자를 형성한 후 컨트롤 절연막인 $SiO_2$를 ultra-high vacuum sputtering을 사용하여 20 nm 두께로 형성 하였다. 마지막으로 $200{\mu}m$ 지름을 가지는 Al 전극을 200 nm 두께로 형성하여 나노 부유 게이트 커패시터를 제작하였다. 제작된 소자는 Agilent E4980A precision LCR meter 및 HP 4156A precision semiconductor parameter analyzer 를 사용하여 전기용량-전압 및 전류-전압 특성분석을 하여 전하저장 특성 및 제작된 소자의 터널링 특성을 확인 하여 본 연구를 통하여 제작된 나노 부유 게이트 커패시터 구조가 메모리 소자응용이 가능함을 확인하였다.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.88-94
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• 2014

The structural, optical and electrical properties of sputter-deposited CIGS films were directly influenced by the sputtering process parameters such as substrate temperature, working pressure, RF power and distance between target and substrate. CIGS thin films deposited by using a quaternary target revealed to be Se deficient due to Se low vapor pressure. This Se deficiency affected the overall stoichiometry of the films, causing the films to be Cu-rich. Current tends to pass through the Cu-Se channels which act as the shunting path increasing the film conductivity. The crystal structure of CIGS thin films depends on the substrate orientation due to the influence of surface morphology, grain size and stress of Mo substrate. The excess of Cu was removed from the CIGS films by KCN treatment, achieving a suitable Cu concentration (referred as Cu-poor) for the fabrication of solar cell. Due to high Cu concentrations on the CIGS film surface induced by Cu-Se phases after CIGS film deposition, KCN treatment proved to be necessary for the fabrication of high efficiency solar cells. Also during KCN treatment, dislocation density and lattice parameter decreased as excess Cu was removed, resulting in increase of bandgap and the decrease of conductivity of CIGS films. It was revealed that Cu-Se secondary phase could be removed by KCN wet etching of CIGS films, allowing the fabrication of high efficiency absorber layer.

• Journal of Radiation Protection and Research
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• v.29 no.2
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• pp.91-96
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• 2004

A practical methodology for the determination of derived intervention levels (DILs) on relocation following an accidental release of radionuclides was designed based on dose rate on the ground. The influence of DILs was investigated with respect to the change of parameter values, which are dependent on socio-environmental characteristics in distinction from temporary and permanent relocations. The DILs on relocation showed a distinct difference depending on effective removal half-life of radionuclides following a deposition, delay time in measurement and residential characteristics. In particular, the delay time. In measurement was an important factor in determination of DILs in the case of an assumption that dose rate on the ground declines in a power function, not in an exponential function. The DILs showed lower numerical values as longer effective half-life, longer delay time In measurement and longer exposure time.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.28.1-28.1
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• 2009

The superior properties of ZnO such as high exciton binding energy, high thermal and chemical stability, low growth temperature and possibility of wet etching process in ZnO have great interest for applications ranging from optoelectronics to chemical sensor. Particularly, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. Currently, low-dimensional ZnO is synthesized by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), thermal evaporation, and sol.gel growth. Recently, our group has been reported about achievement the growth of Ga-doped ZnO nanorods using ZnO seed layer on p-type Si substrate by RF magnetron sputtering system at high rf power and high growth temperature. However, the crystallinity of nanorods deteriorates due to lattice mismatch between nanorods and Si substrate. Also, in the growth of oxide using sputtering, the oxygen flow ratio relative to argon gas flow is an important growth parameter and significantly affects the structural properties. In this study, Phosphorus (P) doped ZnO nanorods were grown on c-sapphire substrates without seed layer by radio frequency magnetron sputtering with various argon/oxygen gas ratios. The layer change films into nanorods with decreasing oxygen partial pressure. The diameter and length of vertically well-aligned on the c-sapphire substrate are in the range of 51-103 nm and about 725 nm, respectively. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission.

• Journal of Ocean Engineering and Technology
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• v.18 no.6 s.61
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• pp.79-83
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• 2004

The curved blocks which compose the bow and stem of a ship contain many skewed joints that are inclined horizontally and vertically. Most of these joints have a large fitness error and are continuously changing their form and are not easily accessible. The welding position and parameter values should be appropriately set in correspondence to the shape and the inclination of the joints. The welding parameters such as current, voltage, travel speed, and melting rate, are related to each other and their values must be in a specific limited range for the sound welding. These correlations and the ranges are dependent up on the kind and size of wire, shielding gas, joint shape and fitness. To determine these relationships, extensive welding experiments were performed. The experimental data were processed using several information processing technologies. The regression method was used to determine the relationship between current voltage, and deposition rate. When a joint is inclined, the weld bead should be confined to a the limited size, inorder to avoid undercut as well as overlap due to flowing down of molten metal by gravity. The dependency of the limited weld size which is defined as the critical deposited area on various factors such as the horizontally and vertically inclined angle of the joint, skewed angle of the joint, up or down welding direction and weaving was investigated through a number of welding experiments. On the basis of this result, an ANN system was developed to estimate the critical deposited area. The ANN system consists of a 4 layer structure and uses an error back propagation learning algorithm. The estimated values of the ANN were validated using experimental values.