• Journal of the Korean Chemical Society
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• v.38 no.7
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• pp.473-479
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• 1994

Tungsten thin film was deposited on p-(100) silicon substrate by using the LPCVD(low pressure chemical vapor deposition) technique. $WF_6$ was used as a source gas for tungsten and $SiH_4$ was used as a reducing gas for $WF_6$. Tungsten thin film was deposited by either SiH4 or Si substrate reduction of $WF_6$ under cold-wall condition and it was deposited by $SiH_4$ reduction of $WF_6$ under hot-wall condition. The crystal structure of deposited thin film under both conditions were identified to be bcc (body centered cubic). The physical and electrical properties of deposited thin films were investigated. The deposited film under hot-wall condition changed to $WSi_2$ film by the annealing under $800^{\circ}C.$ From the experimental results and theoretical considerations, the change of the crystal structure of the thin film by annealing was discussed. $WSi_2$ thin film, which was known to have good compatibility with Si substrate, could be produced under hot-wall condition although the film properties were superior under cold-wall condition.

• Corrosion Science and Technology
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• v.13 no.3
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• pp.107-111
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• 2014

Electroless plated Ni-Co-P films have been used to suppress the electromagnetic waves from magnetic recording media, and the suppression is known to be achieved with films made with optimized plating composition and plating condition. Effects of complexing agents on the deposition rate and bath stability of Ni-Co-P film were studied using sodium citrate, sodium tartrate and multi-complex agents containing both of them. Deposition of electroless Ni-Co-P platings was dependent upon the complexing agents. Deposition rate was twice when using sodium tartrate compared to that using sodium citrate. And it was slightly slower with multi-complex agents than with sodium tartrate, bath stability being declined in the former. Deposition rate increased with increasing pH until pH 11. Excellent bath stability and good deposition rate were obtained using multi-complex agent as sodium citrate 0.10 mol/L and sodium tartrate 0.15 mol/L in the electroless Ni-Co-P plating films.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.1
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• pp.16-24
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• 2021

A laser-engineered net shaping (LENS) process is a representative directed energy deposition process. Deposition characteristics of the LENS process are greatly dependent on the process parameters. The present paper preliminarily investigates deposition characteristics of Inconel 718 superalloy on S45C structural steel using a LENS process. The influence of process parameters, including the laser power and powder feed rate, on the characteristics of the bead formation and the dilution in the vicinity of the deposited region is examined through repeated experiments. A processing map and feasible deposition conditions are estimated from viewpoints of the aspect ratio, defect formation, and the dilution rate of the deposited bead. Finally, an appropriate deposition condition considering side angle, deposition ratio, and buy-to-fly (BTF) is predicted.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.28.2-28.2
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• 2009

Cobalt thin film was fabricated by a novel NH3-based plasma-enhanced atomic layer deposition(PE-ALD) using Co(CpAMD) precursor and $NH_3$ plasma. The PE-ALD Co thin films were produced well on both thermally grown oxide (100 nm) $SiO_2$ and Si(001) substrates. Chemical bonding states and compositions of PE-ALD Co films were analyzed by XPS and discussed in terms of resistivity and impurity level. Especially, we successfully developed PE-ALD Code position at very low growth temperature condition as low as $T_s=100^{\circ}C$, which enabled the fabrication of Co patterns through lift-off method after the deposition on PR patterned substrate without any thermal degradation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.250-250
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• 2009

Thin film of $SnO_2$ was fabricated from plasma enhanced atomic layer deposition technology with bubbler type injector system by using TEMASn (tetrakisethylmethylamino tin) precursor. Mostly crystalline of $SnO_2$ films can be obtained with oxygen plasma and with water at relatively low temperature of $150^{\circ}C$. $SnO_2$ was deposited as an uniform rate of $1.0A^{\circ}$/cycle. In order to obtain uniform film, a seed oxide material was used before TEMASn deposition in ALD process. The process parameters were controlled to obtain dense thin film by atomic deposition methodology. The morphology and characterization of thin film with optimized process condition will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.531-534
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• 2002

NiO buffer layers for YBCO coated conductors were deposited on hi-axially textured Ni substrates by MOCVD(metal organic chemical vapor deposition) method, using single solution source. To establish the processing condition, oxygen partial pressure and deposition temperature were changed. The surface orientation and degree of texture were estimated by X-ray diffraction, X-ray pole figure and atomic force microscopy. The FWHMs of in-plane and out-of-plane of the NiO films were about 10$^{\circ}$. The surface roughness was a function of deposition temperature. The AFM surface roughness of NiO films is in the range of 3∼10 nm, when NiO films was grown at 450∼530$^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.314-319
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• 1998

TiN thin films were deposited on SKD 61 steel substrates by reactive sputtering under various deposition conditions, and subsequently their growth characteristics and properties were studied. Deposition rate was proportionally increased with total gas pressure as well as RF input power, while the increase of nitrogen in the reaction gas induced a significant suppression of deposition rate. The resulted films exhibited hillocks on the surface. The TiN film prepared using a typical deposition condition showed a (111) preferred orientation and maintained the stoichiometry of pure TiN.

• Journal of the Korean Applied Science and Technology
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• v.14 no.1
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• pp.89-93
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• 1997

In this research, ultra-thin films of organic charge transfer complex were deposited on to ordinary microscope slide-glass subtrates with a Langmuir-Blodgett technique. ${\pi}$-A isotherm characteristics of these complex were studied in order to find optimum conditions of deposition by varying temperature of subphase, compression speed, and spreading amount. Transfer ratio of these films were studied during the process of deposition. The UV-visible absorbance spectra of LB films were measured to find state of deposition by varing layer number. The observed optimum conditions of surface, pressure, spreading amount, and dipping speed for depositing LB films(Y-type) were 38m/Nm, $150{\mu}l$ and 5mm/min, respectively. Since the tansfer ratio is close to 100%, the monolayer on the subphase seems to be well transferred to the solid substrate. The thickness of the film was well-controlled as the UV-vis absorbance of films were changed linear according to the number of layers.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.714-716
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• 2002

Indium tin oxide (ITO) was used as the top anode of top emission inverted organic light emitting diodes (TEIOLEDs). TEIOLEDs were fabricated by deposition of an aluminum bottom cathode, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4 1'-diamine (TPD) hole transport layer, a tris-8-hydroxyquinoline aluminum ($Alq_3$) emission layer, and an ITO top anode sequentially. ITO was deposited by r.f. magnetron sputtering without $O_2$ flow during the deposition. After the deposition, the deposited ITO layer was kept under oxygen atmosphere for the oxidation. The characteristics of the TEOILED were affected significantly by the post-deposition oxidation condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.37-40
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• 2002

Superconductor wire fabricated by electrophoresis showed its critical current density depended on parameters such as applied voltage and deposition time. Substrate and suspension solutions. and its properties are also important parameters. When same optimal parameter and condition was used, deposition density of superconductor film affect directly its critical current density. In this study, therefore, electrophoretic deposition technique was utilized for a densification of YBCO superconducting wire, and researches on electrophoretic suspension solutions and additive were experimentally performed for an improvement of the critical current density of fabricated electrophoretically superconducting wire. The samples fabricated in the solution with the additive, 8 vol.% of 1% PEG(1000), showed the highest critical current density.