• Journal of the Korean Ceramic Society
• /
• v.42 no.7 s.278
• /
• pp.521-524
• /
• 2005

ZnO 2-D nanowall structure with around 100 nm thickness, which is composed of tens of nm scale ZnO single crystals, was fabricated through the low temperature chemical solution growth method. Electro Chemical Deposition (ECD) technique was applied to attach the ZnO seed crystals on ITO coated glass substrate. The ZnO nanowall structure was grown in the 0.015 mol$\%$ of aqueous solution of zinc nitrate and hexamethenamine at 60$^{\circ}C$ for 20 - 40 h. The nanowall structure depends on the ECD condition or the applied voltage and duration time. The nanowall shows a photoluminescence around 550 - 700 nm spectrum range.

• 제어로봇시스템학회:학술대회논문집
• /
• 2001.10a
• /
• pp.94.1-94
• /
• 2001

Arc sensor gives important groove information during welding. Automatic seam tracking control system with arc sensor has significant characteristics such that bead formation is given as decentralization of penetration and formation of concave bead profile and that a turning point of transverse weaving with constant arc length control is decided whether or not torch height reaches to a specified setting level. Furthermore, the rotating action of the arc prevents hanging of weld bead and forms flat bead surface under high speed welding condition. The variation of groove and deposition area can be detected from the trace of weaving. The area and width of weaving trace has close correlation with the area of groove and deposition. In this paper, main object of this system is to realize an adaptive microprocessor based controller ...

• Journal of Mechanical Science and Technology
• /
• v.17 no.12
• /
• pp.1904-1911
• /
• 2003

In order to determine the wear properties of AIP (Arc Ion Plating) deposition, wear process was evaluated by using a Falex test machine. Also, in order to determine the effects of coating material on the wear process, TiC, TiN, and TiCN coatings of thickness about 5 $\mu\textrm{m}$∼6 $\mu\textrm{m}$ coated by Arc ion plating deposition method were tested. The wear property was determined under a dry sliding condition as a function of the applied load, sliding distance, sliding velocity and temperature. The results show that when wear of the coating-layer occurred, specific wear amount increased with the wear rate. At initial state, the wear rate rapidly increased, but it gradually reduced as the velocity increased. Also, when raising the temperature, the wear rate increased in the order of TiCN, TiN and TiC due to the frictional heat.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.22 no.5
• /
• pp.213-217
• /
• 2012

Carbon coils could be synthesized on nickel catalyst layer-deposited silicon oxide substrate using $C_2H_2$ and $H_2$ as source gases under thermal chemical vapor deposition system. By the incorporation of $SF_6$ additive in cyclic modulation manner, the dominant formation of the nanosized carbon coils could be achieved with maintaining the minimized sulfur additive amount. The geometry variation of the as-grown carbon coils, such as linear type, microsized coil type, wavelike nanosized coil type, and nanosized coil type, were investigated according to the different cyclic modulation manner of $SF_6$ flow. $SF_6$ gas incorporation develops the coil-type geometry. Furthermore, the higher flow rate of $SF_6$ gas increased the amount of the nanosized carbon coils. The slightly increased etching ability by $SF_6$ addition seems to be the cause for these results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.04b
• /
• pp.97-100
• /
• 2004

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the characteristic of the GaN layer. We have changed the deposition time of SiN mask from 45s to 5min and obtain th optimum condition in 45s. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask and the carrier concentraion increased from $3.5{\times}10^{16}cm^{-3}$ to $1.8{\times}10^{17}cm^{-3}$. We have thus shown that the SiN mask improved significantly the optical properties of the GaN layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.11a
• /
• pp.132-135
• /
• 1992

Diamond thin films by MWPECVD in methane-hydrogen mixed gas were studied, with emphasis on the investigation of the effect of discharge power and pressure. As a result, the growth rate of diamond thin films was affected by discharge power and the surface morphology of diamond thin films was affected by pressure. The growth rate of diamond films was about 1.65 ${\mu}m$/hr under the condition of MW power: 900W, pressure: 60torr, $H_2$ flow rate: 60sccm, $CH_4$ concentration: 1 % and deposition time: 5hr. The deposited diamond films were identified by SEM, XRD and Raman spectrophotometer.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.2
• /
• pp.343-348
• /
• 2007

The physical properties of DMPC monolayer were made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current. Lipid thin films were deposited by accumulation and the current was measured after the electric bias across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 2004.10a
• /
• pp.451-456
• /
• 2004

The Titanium has many superior characteristics Which are specific strength, heat resistance, corrosion resistance, organism compatibility, non-magnetic and etc. and their quantity are abundant this study performed turning operation of Ti-6Al-4V alloy using the TiAlN Coate Tool which treated PVD (Physical Vapor Deposition). Experimental works are also executed to measure cutting force, chip figuration and surface roughness for different cutting conditions. As a result of study. Tool wear was serious at over 100m/min of cutting speed and cutting condition was excellent at 1.0mm of cutting depth.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.459.2-459.2
• /
• 2014

CdTe계와 CGIS계 태양전지의 광투과층으로 CdS 박막이 많이 사용된다. Cds 박막의 필요한 물성으로는 높은 광투과도와 얇은 두께이다. 광투과층으로 사용되는 CdS 막의 광투과도가 높아야 많은 양의 빛이 손실 없이 투과하여 광흡수층인 CIGS에 도달할 수 있다. 특히, CdS막의 두께가 얇으면 밴드 갭 이상의 에너지를 가지는 파장의 빛도 투과시킬 수 있어 태양전지의 효율의 증가을 얻을 수가 있다. 그러나 CdS 막의 두께가 얇을 경우, pinhole이 생성되는 등 막의 균질성이 문제가 된다. 본 연구에서는 높은 변환 효율을 갖는 CIGS 박막 태양전지 제작에 적합한 chemical bath depostion(츙)법을 이용하여 CdS 박막을 제조하였다. 또한 반응시간, Cd 및 S source 비와 같은 증착 조건에 따른 박막의 특성을 조사하였다.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.39 no.10
• /
• pp.1037-1043
• /
• 1990

Diamond thin films were synthesized from the mixed gases of methane and hydrogen on silicon substrates by RF plasma chemical vapor deposition and deposited films were investigated by SEM, X-ray diffractometry and Raman spectroscopy. It is found that high quality diamond-like carbon films were successfully synthesized by PECVD under the deposition condition of 1-10 vol% of methane concentration, 0.15-0.4torr of reactor pressure, 500W of RF power, and 5-20hr of reaction time. Especially, cubo-octahedral diamond-like carbon particles were synthesized by employing 1.0 vol % of methane concentration and 0.4torr of the reactor pressure.