• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.188.1-188.1
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• 2014

Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.

• Korean Membrane Journal
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• v.7 no.1
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• pp.1-18
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• 2005

The permeate flux decline due to membrane fouling can be addressed using a variety of theoretical stand-points. Judicious selection of an appropriate theory is a key toward successful prediction of the permeate flux. The essential criterion f3r such a decision appears to be a detailed characterization of the feed solution and membrane properties. Modem theories are capable of accurately predicting several properties of colloidal systems that are important in membrane separation processes from fundamental information pertaining to the particle size, charge, and solution ionic strength. Based on such information, it is relatively straight-forward to determine the properties of the concentrated colloidal dispersion in a polarized layer or the cake layer properties. Incorporation of such information in the framework of the standard theories of membrane filtration, namely, the convective diffusion equation coupled with an appropriate permeate transport model, can lead to reasonably accurate prediction of the permeate flux due to colloidal fouling. The schematic of the essential approach has been delineated in Figure 5. The modern approaches based on appropriate cell models appear to predict the permeate flux behavior in crossflow membrane filtration processes quite accurately without invoking novel theoretical descriptions of particle back transport mechanisms or depending on adjust-able parameters. Such agreements have been observed for a wide range of particle size ranging from small proteins like BSA (diameter ${\~}$6 nm) to latex suspensions (diameter ${\~}1\;{\mu}m$). There we, however, several areas that need further exploration. Some of these include: 1) A clear mechanistic description of the cake formation mechanisms that clearly identifies the disorder to order transition point in different colloidal systems. 2) Determining the structure of a cake layer based on the interparticle and hydrodynamic interactions instead of assuming a fixed geometrical structure on the basis of cell models. 3) Performing well controlled experiments where the cake deposition mechanism can be observed for small colloidal particles (< $1\;{\mu}m$). 4) A clear mechanistic description of the critical operating conditions (for instance, critical pressure) which can minimize the propensity of colloidal membrane fluting. 5) Developing theoretical approaches to account for polydisperse systems that can render the models capable of handing realistic feed solutions typically encountered in diverse applications of membrane filtration.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.528-532
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• 1999

Y$_2$O$_3$films were grown on SiO$_2$-covered Si(111), and hydrogen-terminated Si(111), and hydrogen-terminated Si(111) substrates at 50$0^{\circ}C$ by ultrahigh vacuum ionized cluster beam deposition (UHV-ICB). The microstructures and growth behavior of these films have been investigated by transmission electron diffraction (TED) and high-resolution transmission electron microscopy(HREM). The TED results show that the $Y_2$O$_3$grown on the SiO$_2$-Si has the epitaxial relationship of (11-1)Y$_2$O$_3$∥(111)Si and [-110]Y$_2$O$_3$∥[-110]Si. The film on the H-Si substrate contains YS\ulcorner and amorphous YSi\ulcornerO\ulcorner layers at the interface, having the orientation relationship each other. For the YSi\ulcorner and the Si substrate, the relationship is (0001)YSi\ulcorner∥(111)Si and [1-210]YSi\ulcorner∥∥[-110]Si. For the $Y_2$O$_3$and the YSi\ulcorner ; the relationship is as follows: (11-1)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner(111)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner. Explanation is given to describe the formation mechanisms of the interfacial phases of SiO\ulcorner, YSi\ulcornerO\ulcorner and YSi\ulcorner. It is shown that the crystallinity of the $Y_2$O$_3$film on the SiO$_2$-Si(111) is better than that of $Y_2$O$_3$on H-Si(111).

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.688-694
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• 1999

Ti-6Al-4V-N films have been grown onto glass substrates by dc reactive magnetron sputtering from a Ti-6Al-4V-N alloy target at different nitrogen partial pressure, input powers and sputtering times. The influence of various sputtering conditions on structural properties of Ti-6Al-4V-N films was investigated by measuring their X-ray diffraction. The quaternary Ti-6Al-4V-N film is crystallizing in a face centered cubic TiN structure, the lattice parameter is smaller than the TiN parameter as titanium atoms of the TiN lattice are replaced by aluminum and vanadium atoms. The films show the (111) preferred orientation and the (111) peak intensity decreases as the nitrogen partial pressure is increased, but the intensity increases as the sputtering time is increased. The deposition rate and the grain size are alto related with the variation of various sputtering conditions.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.119.2-119.2
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• 2017

무전해 니켈도금은 전기 공급 없이 환원재의 화학반응에 의해 도금이 진행되며, 복잡한 형상의 제품에도 균일한 도금 층을 형성시킬 수 있어 널리 적용되는 기술이다. 특히, 전기 니켈도금 층에 비해 무전해 니켈도금 층의 내식성과 내마모성이 우수하여 산업현장에서 가장 많이 사용되고 있다. 그러나 해양환경에서 빠른 유속 변화에 의해 발생되는 캐비테이션-침식 방지를 위한 무전해 니켈도금의 적용은 전무한 실정이다. 따라서 본 연구에서는 회주철의 캐비테이션-침식 방지를 위해 최적의 무전해 니켈도금 조건을 규명하고, 그 캐비테이션 저항성을 평가하고자 하였다. 무전해 니켈코팅을 위한 모재는 gray cast iron (FC250)을 $19.5mm{\times}19.5mm{\times}5mm$의 크기로 제작하였다. 회주철의 인장강도는 $330N/mm^2$이며, 그 성분 조성(wt.%)은 3.23 C, 1.64 Si, 0.84 Mn, 0.016 P, 0.013 S 그리고 나머지는 Fe이다. 시험편은 SiC 페이퍼 grit #1200까지 연마하였으며, 시험편의 표면 거칠기(centre line average, Ra)는 $1.6-2.1{\mu}m$ 범위 내로 제작하였다. 연마된 시험편은 증류수(distilled water) 세척 후 hot air로 건조하였다. 무전해 도금 전 시험편은 탈지를 위해 아세톤 용액(room temperature, RT)에서 3분간 초음파 세척하고, $90^{\circ}C$의 알카리 수용액으로 5분간 세척하였다. 그리고 표면활성화를 위한 산세척(acid pickling)은 5% sulfuric acid 용액에서 30초 동안 실시하였다. 무전해 Ni-P(electroless nickel, EN) 도금 전과 모든 과정마다 증류수로 시험편을 철저하게 세척하였다. EN 도금을 위한 도금욕(the bath)은 기존 문헌 연구를 통해 조성성분, 도금조건 및 변수들(the parameters)의 적절한 범위를 결정하였다. 도금조로 500mL 비커를 사용하였으며, 모든 시험편은 2시간 동안 EN deposition을 실시하였다. 캐비테이션 실험 결과 EN 도금의 표면경도가 증가함에 따라 캐비테이션 저항성도 현저하게 향상되었다.

• Journal of Photoscience
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• v.5 no.3
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• pp.105-109
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• 1998

By using the liquid -phase-deposition (LPD) process, which has a potetnial of preparing organic inorganic composite materials, samples doped with benzo[f]quinoline (BfQ)into silica thia films wre prepared. We observed the fluorescene and fluorescene excitation spectra of the samples, as well as the fluorescence lifetimes and time-resoluved fluorescence spectra. The comparison of thefluorescence spectra in pH-controlled buffer solutions yields the results that the dominant species of BfQ in the LPD silica films is a protonated one. The fluorescence band assigned to a hydrogen-bonded species was observed on the samples prepared from the dipping solutions of 3 and 2 M hexafluorosilicic acid. The band assignment was confirmed by the fluorescence lifetime measurement. The FT-IR M hexaflurosilicic acid. The band assignment was confirmed by the flurescence lifetime meausurement. The FT-IR data proved the existence of included water in silica films prepared from the LPD process. The appearance of the band corresponding to the hydrogen-bonded species within LPD silica phases was explained by the proesence of included water. Depending on the preparation conditions of LPD silica films, the band assigned to protonated species shows bad shifts in a wavenumber region between the peak of hydrogen-bonded and typical protonated species. This implies that there is some distribution of steric conformation of protonated species of BfQ interacting with adsorbing sites of LPD silica. The time -resolved fluorescence spectra suggest that some relaxation process is involved in the conformation of BfQ doped into the solid phase of LPD silica.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.200-200
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• 2012

We investigated a flexible transparent film using the spinning multi-walled carbon nanotubes (MWCNTs). Spin-capable MWCNTs on iron catalyzed on a SiO2 wafer was grown by chemical vapor deposition, which was performed at $780^{\circ}C$ using C2H2 and H2 gas. The average diameter and length of MWCNTs grown on the substrate were ~15 nm and $250{\sim}300{\mu}m$, respectively. The MWCNT sheets were produced by continuously pulling out from well-aligned MWCNTs on a substrate. The MWCNT sheet films were produced simply by direct coating on the flexible film or grass. The thickness of sheet film was remarkably decreased by alcohol spraying on the surface of sheet. The alcohol splay increased transmittance and decreased electrical resistance of MWCNT sheet films. Single and double sheets were produced with sheet resistance of ~699 and ${\sim}349{\Omega}/sq$, respectively, transmittance of 81~85 % and 67~72%, respectively. The MWCNT sheet films were heated through the application of direct current power. The flexible transparent heaters showed a rapid thermal response and uniform distribution of temperature. In addition, MWCNT yarns were prepared by spinning a bundle of MWCNTs from vertically super-aligned MWCNTs on a substrate, and field emission from the tip and side of the yarns was induced in a scanning electron microscope. We found that the field emission behavior from the tip of the yarn was better than the field emission from the side. The field emission turn-on voltages from the tip and side of MWCNT yarns were 1.6 and $1.7V/{\mu}m$, respectively, after the yarn was subjected to an aging process. Both the configuration of the tip end and the body of the yarn were changed remarkably during the field emission. We also performed the field emission of the sheet films. The sheet films showed the turn on voltage of ${\sim}1.45V/{\mu}m$ during the field emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.85-88
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• 2003

$Sr_xBa_{1-x}Nb_2O_6$(SBN, $025{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in Ar/$O_2$ atmosphere. SBN30 thin film of 500 ${\AA}$ was pre-deposited as a seed layer on Pt(l00)/$TiO_2$/$SiO_2$/Si substrate followed by SBN60 deposition up to 4500 ${\AA}$ in thickness. SBN60/SBN30 layer was deposited at different Oxygen amount of 0, 8.1, 17, and 31.8 sccm, respectively. The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. The crystal structure and the electric properties depended on the Oxygen amount, heating temperature and was the best at O2 = 8.1 seem, $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was 13 ${\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1492, respectively.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.19-19
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• 2002

Perovskite-type titanate dielectrics have attracted much attention in memory devices such as DRAMs or FeRAMs due to their high dielectric constants. However, low volatility of the Ba, Sr, Pb or Zr precursors with only thd ligands has limitations in obtaining high quality thin films by liquid source metal organic chemical vapor deposition (LS-MOCVD) processes. To improve the volatility of these precursors, many attempts have been made such as adding polyether ligands to satisfy the coordinative saturation. We report the synthesis of new precursors Ba(thd)₂(tmeea) and Sr(thd)₂(tmeea), where tmeea = tris[2-(2-methoxyethoxy)ethyl]amino, and LS-MOCVD of barium strontium titanate (BSTO) thin films using these precursors. Due to increased basicity of amines compared with ethers, it is expected that the nitrogen-donor ligand will make a strong bond to a metal than an analogous oxygen-donor ligand, consequently improving the volatility and thermal behavior of these precursors. Thin films of BSTO were grown on Pt(111)/SiO₂/Si(100) substrates by LS-MOCVD using a cocktail source consisting of the conventional Ti precursor Ti(thd)₂(O/sup i/Pr), and these new Ba and Sr precursors. As-grown films were characterized by XPS, SEM, XRD, XRF, and C-V and I-V measurements. BSTO films grown at 420℃ were stoichiometric barium strontium titanate with very smooth surface morphology and their dielectric constants were found to be as targe as 450. Dependence of the composition, microstructure and the electrical properties of the BSTO films on the growth temperature, annealing temperature, working pressure, and the composition of the cocktail source will be discussed.

• Corrosion Science and Technology
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• v.2 no.3
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• pp.141-147
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• 2003

Sputter-deposited Nb-Al-Cr alloys. $3-5{\mu}m$ thick, have been prepared on quartz substrates as oxidation-and sulfidation-resistant materials at high temperatures. The oxidation or the alloys in the $Ar-O_2$ atmosphere of an oxygen partial pressure of 20 kPa follows approximately the parabolic rate law, thus being diffusion controlled. Their oxidation rates are almost the same as or even lower than those ofthc typical chromia-forming alloys. The multi-lavered oxide scales are formed on the ternary alloys. The outermost layer is composed of $Cr_2O_3$, which is"mainly responsible for the high oxidation'resistance of these alloys. In contrast to sputter-deposited Cr-Nb binary alloys reported previously, the inner layer is not porous. TEM observation as well as EDX analysis indicates that the innermost layer is a mixture of $Al_2O_3$ and niobium oxide. The dispersion of $Al_2O_3$ in niobium oxide may be attributable to the prevention of the formation of the porous oxide layer. The sulfidation rates of the present ternary alloys arc higher than those of the sputter-deposited Nb-AI binary alloys, but still several orders of magnitude lower than those of conventional high temperature alloys. Two-layered sulfide scales are formed, consisting of an outer $Al_2S_3$ layer containing chromium and an inner layer composed of $NbS_2$ and a small amount of $Cr_2S_3$. The presence of $Cr_2S_3$ in the inner protective $NbS_2$ layer may be attributed to the increase in the sulfidation rates.