• 한국산업융합학회 논문집
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• 제24권5호
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• pp.537-546
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• 2021

Remanufacturing is one of the most important resource recycling technology in response to resource depletion and environmental pollution. Domestic remanufacturing industry don't invigorate compared to other advanced countries because of low price and reliability of remanufactured product. In this study, remanufactured hydraulic pump and solenoid valve were evaluated durability by accelerated life test. In order that standard remanufacturing process was developed by core analysis and failure mode and effect analysis. And cores were remanufactured by standard remanufacturing process. For accelerated life test, the evaluation item and criteria were deduced by results of FMEA, reliability standards and enterprise interior criteria. To evaluate durability of remanufactured product, the remanufactured hydraulic pump and solenoid valve were evaluated performance after accelerated life test and the results were satisfied with criteria. This study showed that remanufactured products have a similar level of durability to new products by definition of remanufacturing.

• Transactions on Electrical and Electronic Materials
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• 제3권2호
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• pp.10-15
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• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.61-64
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• 2002

We have optimally designed and implemented by a monolithic microwave integrated circuit(MMIC) the low noise amplifier(LNA) of 5.8GHz band composed of receiver front-end(RFE) in a on-board equipment system for dedicated short range communication using a depletion-mode GaAs MESFET. The LNA is provided with two active devices, matching circuits, and two drain bias circuits. Operating at a single supply of 3V and a consumption current of 18㎃, The gain at center frequency 5.8GHz is 13.4dB, Noise figure(NF) is 1.94dB, Input 3rd order intercept point(lIPS) is 3dBm, and Input return loss(5$_{11}$) and Output return loss(S$_{22}$) is -l8dB and -13.3dB, respectively. The circuit size is 1.2$\times$O.7$\textrm{mm}^2$.EX>.>.

• 대한전자공학회논문지
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• 제21권6호
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• pp.34-41
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• 1984

RMOS(refractors metal oxide semiconductor)의 게이트 금속으로 사용되는 Mo2N/Mo 이중층을 N2와 Ar을 혼합하여 저온의 반응성 스펏터링법으로 제조하였다. Ar : N2=95 : 5로 혼합된 가스 분위기에서 반응성 스펏터링을 할 때 Mo2N이 잘 형성되었다. 이렇게 제조한 Mo2N 박막은 면저항이 약 1.20∼1.28Ω/□로서 다결정 실리콘의 1/10정도가 되어 반도체 소자의 동작속도를 크게 향상시킬 것으로 기대된다. 1100℃의 N2분위기에서 PSC(phosphorus silicate glass)를 불순물 확산원으로 하여 소오스와 드레인의 불순물 확산을 할때 Mo2N 박막이 Mo으로 환원되어 확산전의 면저항보다 훨씬 작은 약 0.38Ω/□정도의 면저항을 나타내었다. 본 실험에서 제작한 자기정렬된 RMOSFET의 문턱전압은 약 -1.5V이고 결핍과 증가의 두 가지 동작특성을 나타내었다.

• Molecules and Cells
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• 제38권3호
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• pp.236-242
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• 2015

Intake of caffeine during pregnancy can cause retardation of fetal development. Although the significant influence of caffeine on animal development is widely recognized, much remains unknown about its mode of action because of its pleiotropic effects on living organisms. In the present study, by using Caenorhabditis elegans as a model organism, the effects of caffeine on development were examined. Brood size, embryonic lethality, and percent larval development were investigated, and caffeine was found to inhibit the development of C. elegans at most of the stages in a dosage-dependent fashion. Upon treatment with 30 mM caffeine, the majority ($86.1{\pm}3.4%$) of the L1 larvae were irreversibly arrested without further development. In contrast, many of the late-stage larvae survived and grew to adults when exposed to the same 30 mM caffeine. These results suggest that early-stage larvae are more susceptible to caffeine than later-stage larvae. To understand the metabolic responses to caffeine treatment, the levels of expression of cytochrome P450 (cyp) genes were examined with or without caffeine treatment using comparative microarray, and it was found that the expression of 24 cyp genes was increased by more than 2-fold (p < 0.05). Among them, induction of the cyp-35A gene family was the most prominent. Interestingly, depletion of the cyp-35A family genes one-by-one or in combination through RNA interference resulted in partial rescue from early larval developmental arrest caused by caffeine treatment, suggesting that the high-level induction of cyp-35A family genes can be fatal to the development of early-stage larvae.

• Molecules and Cells
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• 제28권6호
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• pp.545-551
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• 2009

Mitogen-activated protein kinases (MAPK) affect the activation of activator protein-1 (AP-1), which plays an important role in regulating a range of cellular processes. However, the roles of these signaling factors on hydrogen peroxide ($H_2O_2$)-induced cell death are unclear. This study examined the effects of $H_2O_2$ on the activation of MAPK and AP-1 by exposing the cells to $H_2O_2$ generated by either glucose oxidase or a bolus addition. Exposing BJAB or Jurkat cells to $H_2O_2$ affected the activities of MAPK differently according to the method of $H_2O_2$ exposure. $H_2O_2$ increased the AP-1-DNA binding activity in these cells, where continuously generated $H_2O_2$ led to an increase in mainly the c-Fos, FosB and c-Jun proteins. The c-Jun-$NH_2$-terminal kinase (JNK)-mediated activation of c-Jun was shown to be related to the $H_2O_2$-induced cell death. However, the suppression of $H_2O_2$-induced oxidative stress by either JNK inhibitor or c-Jun specific antisense transfection was temporary in the cells exposed to glucose oxidase but not to a bolus $H_2O_2$. This was associated with the disruption of death signaling according to the severe and prolonged depletion of reduced glutathione. Overall, these results suggest that $H_2O_2$ may decide differently the mode of cell death by affecting the intracellular redox state of thiol-containing antioxidants, and this depends more closely on the duration exposed to $H_2O_2$ than the concentration of this agent.

• Journal of Construction Engineering and Project Management
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• 제2권4호
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• pp.20-24
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• 2012

Construction while being an economic activity that provides facilities and infrastructure, it is beneficial to man in some aspects and detrimental in others. There have been environmental concerns related to construction activities globally which mainly focus on atmospheric emissions, depletion of natural resources and energy issues. This study was carried out to assess the impacts of construction activities on the environment in Iganga Municipality and to propose measures for their mitigation. The methodology included: review of relevant literature, observations of the general environmental effects of construction activities, focus groups and a survey conducted among construction industry role players to determine their perceptions and opinions regarding environmental impact of construction activities. The collected data was presented in tabular form and analysed by description of responses to questions. The study revealed that forests were the most greatly degraded due to high demand of timber for construction followed by wetlands degradation. The findings of this study will be useful to architects, designers and builders in order to carefully design buildings and other infrastructure that are environmentally friendly and sustainable. Construction materials and their mode of acquisition are harmful threats to the environment. There is need to reduce the consumption of these materials through recycling and reusing wastes to reduce on waste generation, use of virgin materials and the subsequent waste of energy used in new material production.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.257-258
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• 2012

The SERS spectra of 4-aminobenzenethiol (ABT) have served as the "probe" molecule, which have helped spectroscopists to build up the electromagnetic (EM) and chemical (CHEM) enhancement mechanisms. In particular, the b2-peaks (9b, 3, and 19b) of the SERS spectra of ABT have been attributed to arise from the vibronic charge-transfer (CT) between Au or Ag surface and the ABT. Quite recently, however, Tian and co-workers [1] claimed that the b2-peaks are not the CT-enhanced spectra of ABT. Instead, these peaks arise from the 4,4'-dimercaptoazobenzenes (DMABs) that are produced by the oxidative coupling of two ABTs. Their claim is under intense debate currently. Herein, we studied spatially and temporally resolved SERS spectra of ABTs on Ag thin film (thickness of 10 nm), to investigate such claim. Herein, we present a series of additional evidences that strongly support that the b2 intensities of ABTs do not arise from the CT-enhancement: (1) the b2-peaks can be locally "activated" (i. e. turned on) irreversibly with focused laser radiation; (2) the TOF-SIM spectrometry on the activated region show depletion of ABT-Ag+ ions; and finally (3) the spatially resolved FT-IR spectra of the activated region show two pronounced peaks at 1377 cm-1 and 1460 cm-1, both of which can be assigned to the stretching mode of N=N bond. While the result does not disprove the existence of CT or CHEM enhancement in general, the results do show that previous interpretations of the spectra of ABTs should be re-interpreted.

• Journal of electromagnetic engineering and science
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• 제17권2호
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• pp.105-107
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• 2017

The self-biasing circuit through a feedback resistor is applied to a gallium nitride (GaN) distributed power amplifier (PA) monolithic microwave circuit (MMIC). The self-biasing circuit is a useful scheme for biasing depletion-mode compound semiconductor devices with a negative gate bias voltage, and is widely used for common source amplifiers. However, the self-biasing circuit is rarely used for PAs, because the large DC power dissipation of the feedback resistor results in the degradation of output power and power efficiency. In this study, the feasibility of applying a self-biasing circuit through a feedback resistor to a GaN PA MMIC is examined by using the high operation voltage of GaN high-electron mobility transistors. The measured results of the proposed GaN PA are the average output power of 41.1 dBm and the average power added efficiency of 12.2% over the 6-16 GHz band.