• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.49-56
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• 2008

This paper introduces a compact analytical current conduction model of long-channel depletion-mode n-type nanowire field-effect transistors (NWFETs). The NWFET used in this work was fabricated with the bottom-up process and it has a bottom-gate structure. The model includes all current conduction mechanisms of the NWFET operating at various bias conditions. The results simulated from the newly developed NWFET model reproduce a reported experimental results within a 10% error.

• Korean Journal of Optics and Photonics
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• v.25 no.1
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• pp.44-49
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• 2014

We have analyzed the amplification of a signal wave in the optical parametric interactions of the pump, signal, and idler waves in planar waveguides, with the pump wave being Cerenkov radiation. Based on the coupled-mode theory, we have derived the first-order coupled-mode differential equations for no pump depletion. The equations can easily be solved numerically. The approximate analytical and numerical solutions of the equations show that the signal wave can be amplified parametrically.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.1
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• pp.225-232
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• 2014

Optical parametric amplification has been analyzed for the Cerenkov-idler configuration in planar waveguides. The coupled-mode theory is employed for the analysis. The coupled-mode equations are derived and the approximate analytic solution is obtained for no pump depletion. From the analytic solution, it is shown that the signal power gain can be enhanced as the Cerenkov radiation angle of the idler approaches to zero. The numerical example is also shown for the effect of the Cerenkov radiation angle approaching zero.

• Human Ecology Research
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• v.53 no.5
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• pp.543-556
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• 2015

This study examined the influence of self-regulatory resource depletion and self-regulatory modes on fashion product purchase intention. Initial research design dealt with differences of the resource depletion effect according to self-regulatory modes. The study used a 2 (self-regulatory resource depletion: depletion/non-depletion) ${\times}$ 2 (regulatory mode: assessment mode/locomotion mode) between-subjects factorial design. Second, the research design empirically analyzed the influence of self-regulatory resource depletion and self-regulatory mode on the fashion product purchase intention by each product group divided by type and involvement of fashion product. The subjects for the initial research were 255 university students in Seoul, Gyeonggi, and Daejeon. The subjects for the second research were 873 university students in Seoul and Daejeon. Collected data were analyzed with SPSS statistical package with reliability analysis, t -test, analysis of variance (ANOVA), and analysis of covariance (ANCOVA). The results were as follows. First, assessment-oriented consumers showed low purchase intentions about fashion products when self-regulatory resources were exhausted than when self-regulatory resource were not exhausted. Locomotion-oriented consumers, indicated no differences in purchase intention about fashion products regardless of self-regulatory resource depletion. Second, influences on purchase intention by self-regulatory resource depletion and self-regulatory mode were different according to the fashion product group. The results of this study implied that strategies should be differentiated when establishing a fashion industry marketing strategy according to the self-regulatory resource depletion and self-regulatory mode of consumers.

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.421-426
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• 1999

In this paper, we present p-channel GaAs MOSFET having $Al_2O_3$ as gate insulator fabricated on a semi-insulating GaAs substrate, which can be operated in the depletion mode. $1\;{\mu}m$ thick undoped GaAs buffer layer, $4000\;{\AA}$ thick p-type GaAs epi-layer, undoped $500{\AA}$ thick AlAs layer, and $50\;{\AA}$ thick GaAs cap layer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate and this wafer was oxidized. AlAs layer was fully oxidized as a $Al_2O_3$ thin film. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S I GaAs was successful in realizing depletion mode p-channel GaAs MOSFET.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.2
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• pp.15-22
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• 2012

A low power consumption scan driver using depletion-mode n-type InGaZnO thin-film transistors is proposed. The proposed circuit uses 2 clock signals and generates the non-overlap output signals without the additional masking signals and circuits. The power consumption of the proposed circuit is decreased by reducing the number of the clock signals and short circuit current. The simulation results show that the proposed circuit operates successfully when the threshold voltage of TFT is varied from -3.0V to 1.0V. The proposed scan driver consumes 4.89mW when the positive and negative supply voltage is 15V and -5V, respectively, and the operating frequency is 46KHz on the XGA resolution panel.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.359-365
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• 2007

In this paper we present a bottom-gate type of zinc oxide (ZnO) and Gallium (Ga) doped zinc oxide (GZO) based thin film transistors (TFTs) through applying a radio frequency (RF) magnetron sputtering method at room temperature. The gate leakage current can be reduced up to several ph by applying $SiO_2$ thermally grown instead of using new gate oxide materials. The root mean square (RMS) values of the ZnO and GZO film surface were measured as 1.07 nm and 1.65 nm, respectively. Also, the transmittances of the ZnO and GZO film were more than 80% and 75%, respectively, and they were changed as their film thickness. The ZnO and GZO film had a wurtzite structure that was arranged well as a (002) orientation. The ZnO TFT had a threshold voltage of 2.5 V, a field effect mobility of $0.027\;cm^2/(V{\cdot}s)$, a on/off ratio of $10^4$, a gate voltage swing of 17 V/decade and it operated in a enhancement mode. In case of the GZO TFT, it operated in a depletion mode with a threshold voltage of -3.4 V, a field effect mobility of $0.023\;cm^2/(V{\cdot}s)$, a on/off ratio of $2{\times}10^4$ and a gate voltage swing of 3.3 V/decade. We successfully demonstrated that the TFTs with the enhancement and depletion mode type can be fabricated by using pure ZnO and 1wt% Ga-doped ZnO.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.1
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• pp.1-7
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• 2000

In this paper, we present n-channel GaAs MOSFET having $Al_2O_3$ as gate in insulator fabricated on a semi-insulating GaAs substrate. 1 ${\mu}$m thick undoped GaAs buffer layer, 1500 ${\AA}$ thick n-type GaAs, undoped 500 ${\AA}$ thick AlAs layer, and 50 ${\AA}$ GaAs caplayer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate oxidized. When it was wet oxidized, AlAs layer was fully converted $Al_2O_3$. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S${\cdot}$I GaAs was suitable in realizing depletion mode GaAs MOSFET.

• Analytical Science and Technology
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• v.28 no.6
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• pp.453-459
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• 2015

Split-flow thin cell fractionation (SPLITT fractionation, SF) is a particle separation technique that allows continuous (and thus a preparative scale) separation into two subpopulations based on the particle size or the density. In SF, there are two basic performance parameters. One is the throughput (TP), which was defined as the amount of sample that can be processed in a unit time period. Another is the fractionation efficiency (FE), which was defined as the number % of particles that have the size predicted by theory. Full-feed depletion mode (FFD-SF) have only one inlet for the sample feed, and the channel is equipped with a flow stream splitter only at the outlet in SF mode. In conventional FFD-mode, it was difficult to extend channel due to splitter in channel. So, we use large scale splitter-less FFD-SF to increase TP from increase channel scale. In this study, a FFD-SF channel was developed for a large-scale fractionation, which has no flow stream splitters (‘splitter less’), and then was tested for optimum TP and FE by varying the sample concentration and the flow rates at the inlet and outlet of the channel. Polyurethane (PU) latex beads having two different size distribution (about 3~7 µm, and about 2~30 µm) were used for the test. The sample concentration was varied from 0.2 to 0.8% (wt/vol). The channel flow rate was varied from 70, 100, 120 and 160 mL/min. The fractionated particles were monitored by optical microscopy (OM). The sample recovery was determined by collecting the particles on a 0.1 µm membrane filter. Accumulation of relatively large micron sized particles in channel could be prevented by feeding carrier liquid. It was found that, in order to achieve effective TP, the concentration of sample should be at higher than 0.4%.

• Journal of Power System Engineering
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• v.19 no.6
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• pp.39-46
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• 2015

With rising fuel costs and the depletion of fossil fuels, electric vehicles of high efficiency has been increasing interest. although high-performance battery continually is developing, Electric vehicles is not satisfied with the characteristics of the environment. In this study, By using the current fuel economy testing methods(5-cycle test), until the fully discharged battery electric vehicles is evaluated for a variety of environmental and operating conditions. As a result, Electric vehicles showed a low energy consumption efficiency in low temperature and rapid acceleration, deceleration in the operating environment compared with normal temperature.