• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.31 no.9
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• pp.64-74
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• 2003

This paper proposes a new autonomous stationkeeping system suitable for geostationary satellite and conducts computer simulation to verify the proposed algorithm. The proposed onboard system receives pseudo-range signal from ground equipments located at two different position with long baseline, determines the orbit error in realtime and generates orbit control commands. For minimized onboard stationkeeping logic and better reliability, the orbit controller is designed to generate control signal to have the orbit roughly follow predetermined reference range data which is generated through ground based computer simulation. The reference range data is assumed to be uploaded with time tag. A simple orbit controller is proposed which combines the reference $\Delta$V and feedback control signal. Finally, the performance of the proposed system is verified through the computer simulations.

• The Korean Journal of Physiology and Pharmacology
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• v.20 no.2
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• pp.193-200
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• 2016

Sertraline, a selective serotonin reuptake inhibitor (SSRI), has been reported to lead to cardiac toxicity even at therapeutic doses including sudden cardiac death and ventricular arrhythmia. And in a SSRI-independent manner, sertraline has been known to inhibit various voltage-dependent channels, which play an important role in regulation of cardiovascular system. In the present study, we investigated the action of sertraline on Kv1.5, which is one of cardiac ion channels. The effect of sertraline on the cloned neuronal rat Kv1.5 channels stably expressed in Chinese hamster ovary cells was investigated using the whole-cell patch-clamp technique. Sertraline reduced Kv1.5 whole-cell currents in a reversible concentration-dependent manner, with an $IC_{50}$ value and a Hill coefficient of $0.71{\mu}M$ and 1.29, respectively. Sertraline accelerated the decay rate of inactivation of Kv1.5 currents without modifying the kinetics of current activation. The inhibition increased steeply between -20 and 0 mV, which corresponded with the voltage range for channel opening. In the voltage range positive to +10 mV, inhibition displayed a weak voltage dependence, consistent with an electrical distance ${\delta}$ of 0.16. Sertraline slowed the deactivation time course, resulting in a tail crossover phenomenon when the tail currents, recorded in the presence and absence of sertraline, were superimposed. Inhibition of Kv1.5 by sertraline was use-dependent. The present results suggest that sertraline acts on Kv1.5 currents as an open-channel blocker.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.789-798
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• 1996

The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA. $V_{FB}$ measuring system. In the trap density double nitride layer structures were higher by 0.85*10$^{16}$ $m^{-2}$ than one nitride layer structure, and the AVFB with oxide field was linearly increased. However, one nitride layer structure was linearly increased and saturated above 9.07*10$^{8}$ V/m in oxide field. In the erase behavior, the hole injection from silicon instead of the trapped electron emission was observed, and also it was highly dependent upon the pulse amplitude and the pulse width. In the memory retentivity, double nitrite layer structures were superior to one nitride layer structure, and the decay rate of the trapped electron with increasing temperature was low. At increasing the number on BTS, the variance of AVFB of the double nitride layer structures was smaller than that of one nitride layer structure, and the trapped electron retention rate was high. In this paper, the double nitride layer structures were turned out to be useful in improving the nonvolatile memory characteristics.

• Journal of the Korean Chemical Society
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• v.39 no.3
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• pp.157-162
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• 1995

The x values and electrical conductivities of the nonstoichiometric compounds $WO_{3-x}$ have been measured in the temperature range from 350 to 700$^{\circ}C$ under oxygen partial pressure of $2{\times}10_{-1}\;to\;1{\times}10_{-5}$ atm. The enthalpy of the defect formation shows an endothermic process, and the oxygen pressure dependence of the defect formation or 1/n varies from -1/5.2 to -1/5.9. The activation energy and 1/n value for the electrical conductivity are 0.24~0.29 eV and -1/4.3~-1/7.6, respectively. The Tungsten Oxide as a n-type semiconductor has predominently defect model of singly charged oxygen vacancy at low temperature, and of doubly charged oxygen vacancy at high temperature.

• Journal of Environmental Science International
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• v.16 no.12
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• pp.1431-1437
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• 2007

Cobalt titanates($CoTiO_x$), such as $CoTiO_3$ and $Co_2TiO_4$, have been synthesized via a solid-state reaction and characterized using X-ray diffraction(XRD) and X-ray photoelectron spectroscopic(XPS) measurement techniques, prior to being used for continuous wet trichloroethylene(TCE) oxidation at $36^{\circ}C$, to support our earlier chemical structure model for Co species in 5 wt% $CoO_x/TiO_2$(fresh) and(spent) catalysts. Each XRD pattern for the synthesized $CoTiO_3$ and $Co_2TiO_4$ was very close to those obtained from the respective standard XRD data files. The two $CoTiO_x$ samples gave Co 2p XPS spectra consisting of very strong main peaks for Co $2p_{3/2}$ and $2p_{1/2}$ with corresponding satellite structures at higher binding energies. The Co $2p_{3/2}$ main structure appeared at 781.3 eV for the $CoTiO_3$, and it was indicated at 781.1 eV with the $Co_2TiO_4$. Not only could these binding energy values be very similar to that exhibited for the 5 wt% $CoO_x/TiO_2$(fresh), but the spin-orbit splitting(${\Delta}E$) had also no noticeable difference between the cobalt titanates and a sample of the fresh catalyst. Neither of all the $CoTiO_x$ samples were active for the wet TCE oxidation, as expected, but a sample of pure $Co_3O_4$ had a good activity for this reaction. The earlier proposed model for the surface $CoO_x$ species existing with the fresh and spent catalysts is very consistent with the XPS characterization and activity measurements for the cobalt titanates.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.2
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• pp.27-35
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• 2016

A Low jitter dual output frequency synthesizer for smart audio devices is described in this paper. It has been fabricated in a 1.8 V Dongbu $0.18-{\mu}m$ CMOS process. Output frequency is controlled by 3 rd order Sigma-Delta Modulation and digital divider. The frequency synthesizer has a size of $0.6mm^2$, frequency range of 0.6-200 MHz, loop bandwidth of 350 kHz, and rms jitter of 11.4 ps-21.6 ps.

• The Korean Journal of Physiology and Pharmacology
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• v.20 no.1
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• pp.75-82
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• 2016

Paroxetine, a selective serotonin reuptake inhibitor (SSRI), has been reported to have an effect on several ion channels including human ether-a-go-go-related gene in a SSRI-independent manner. These results suggest that paroxetine may cause side effects on cardiac system. In this study, we investigated the effect of paroxetine on Kv1.5, which is one of cardiac ion channels. The action of paroxetine on the cloned neuronal rat Kv1.5 channels stably expressed in Chinese hamster ovary cells was investigated using the whole-cell patch-clamp technique. Paroxetine reduced Kv1.5 whole-cell currents in a reversible concentration-dependent manner, with an $IC_{50}$ value and a Hill coefficient of $4.11{\mu}M$ and 0.98, respectively. Paroxetine accelerated the decay rate of inactivation of Kv1.5 currents without modifying the kinetics of current activation. The inhibition increased steeply between -30 and 0 mV, which corresponded with the voltage range for channel opening. In the voltage range positive to 0 mV, inhibition displayed a weak voltage dependence, consistent with an electrical distance ${\delta}$ of 0.32. The binding ($k_{+1}$) and unbinding ($k_{-1}$) rate constants for paroxetine-induced block of Kv1.5 were $4.9{\mu}M^{-1}s^{-1}$ and $16.1s^{-1}$, respectively. The theoretical $K_D$ value derived by $k_{-1}/k_{+1}$ yielded $3.3{\mu}M$. Paroxetine slowed the deactivation time course, resulting in a tail crossover phenomenon when the tail currents, recorded in the presence and absence of paroxetine, were superimposed. Inhibition of Kv1.5 by paroxetine was use-dependent. The present results suggest that paroxetine acts on Kv1.5 currents as an open-channel blocker.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.171-171
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• 2000

차세대 반도체 제조에서 Design rule 이 점점 더 shrink 됨에 따라 shallow junction 분석의 중요성이 강조되고 있다. 이러한 shallow junction에 대한 분석방법중의 하나인 SIMS 분석에 있어서 depth resolution을 향상시키는 것이 중요하며, 일차이온의 에너지를 낮추어 줌으로써 이러한 효과를 달성할 수 있다. 그러나 최근의 연구에 따르면 O2+를 이용한 low energy SIMS 분석 시에 non-zero incidence angle로 분석할 경우 surface roughness가 발생한다는 사실이 보고되었으며, surface roughness를 줄이고 분석 초기의 transient region을 줄이기 위한 방법으로 oxygen flooding을 사용하는 경우 특정 각도에서 surface roughness가 여전히 존재할 뿐 아니라 분석 초기영역에서의 sputter rate이 변화하는 문제가 있음이 보고된바 있다. 본 연구에서는 2keV O2+ 일차이온을 이용하여 oxygen flooding 하에서 기존 조건인 60도 incidence로 분석하는 방법의 문제점을 파악하고 incidence angle을 45도로 바꾸어 분석하는 방법을 검토하였다. 그 결과 기존의 분석조건에서는 분석도중 표면부근에서 sputter rate이 변화하고 surface roughness가 증가하는 것을 확인하였고, 그로 인하여 oxygen flooding을 하지 않은 경우와 많은 차이가 발생하는 것을 발견하였다. Incidence angle을 45도로 바꾼 결과 이러한 문제가 해결되는 것을 확인하였으며, 특히 GaAs $\delta$layer 분석을 통하여 이 분석조건이 기존의 분석조건에 비하여 획기적으로 향상되는 것을 확인 할 수 있었다. 또한 여러 가지 shallow junction 분석을 통하여 이 분석방법이 상당히 신뢰성이 있음을 알 수 있었다. 그러나 여전히 oxygen flooding을 하지 않은 경우에 비하여 다소간의 차이가 있는 것이 발견되었는데, 이는 주로 표면에 잔존하는 산화막에 의한 효과와 oxygen flooding에서 보다 더 depth resolution이 좋음으로 인하여 발생하는 것으로 추정되었으며 그 밖에 다른 가능성도 제기되었다. 따라서 이 방법은 표면 산화막이 거의 없는 시료에 대하여 적용한다면 oxygen flooding을 하지 않은 경웨 비하여 transient region이 거의 없고 junction depth를 보다 신뢰성 있게 측정할 수 잇는 장점이 있는 것으로 판단되었다. As, P의 저 에너지이온 주입시료에 대해 이 분석방법을 적용할 경우 C+s 분석법에 비하여 depth resolution을 비교적 쉽게 향상시킬 수 있었고, oxygen follding을 쓰지 않은 경우에 비해서는 검출한도를 약 100배 정도 향상시킬 수 있었다. 그러나 2.5keV Cs+ 분석법에 비하면 아직 depth resolution이 불충분하여 실제로 shallow As 분석에 적용하기에는 다소 문제점이 있었다.

• Korean Journal of Materials Research
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• v.5 no.3
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• pp.357-363
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• 1995

PECVD(Plasma-enhanced Chemical Vapor Deposition)법을 이용하여 증착한 $Ta_{2}$O_{5}$ 박막의 전기적 특성과 미세구조에 미치는 RTA(Rapid Thermal annealing) 후속 고온 열처리의 영향을 조사하였다. $Ta_{2}$O_{5}$ 박막의 미세구조와 interface 거동을 관찰하기 위하여XRD(X-ray Diffractometer), TEM(Transmission Electron Microscope), AES(Auger Electron Spectroscope) 분석을 실시하였으며, 전기적 특성을 관찰하기 위하여 I-V, C-V 측정을 하였다. $600^{\circ}C$에서 60초간 열처리를 실시하였을 경우 가장 우수한 유전 특성 및 누설 전류 특성을 보였으며, 유전 상수는 26이었고 누설 전류는 5 $\times$ $10^{-11}$A/$cm^{2}$이었다. $600^{\circ}C$ 이상의 온도에서 행한 열처리에 의하여 박막의 누설 전류와 유전 특성은 복합적으로 영향을 받았음을 알 수 있었다. 이는 $600^{\circ}C$의 열처리에서 이루어지고있는 박막의 결함감소와 고밀화 현상과 함께 80$0^{\circ}C$ 이상의 열처리에서 발생하는 조밀육방정 결정 구조를 가지는 $\delta$-$Ta_{2}$O_{5}$의 결정화에 기인함을 알 수 있었다. 또한 TEM과 AES분석 결과로부터 이들 박막의 누설 전류와 유전상수의 변화는 열처리에 의하여 일어나는 Ta-O-Si transition층의 생성과 성장에 기인함을 알 수 있었다. 따라서 $Ta_{2}$O_{5}$ 박막의 전기적 특성의 변화는 RTA 후속 열처리에 따른 계면 반응과 결정화 그리고 박막의 조밀화에 그 영향이 있음을 알 수 있었다.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.171-177
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• 1999

In the $(Pb_{1-x}M_x)[(Mn_{1/3}Sb_{2/3})_{0.05}Zr_yTi_{0.95-y}]O_3$ system, where M=Ca and Sr, the piezoelectric properties were evaluated to examine the possibility of application to piezoelectric transformer. A Rosen-type piezoelectric transformer was formed, then the electrical properties of voltage step-up ratio, frequency characteristics etc. were analysed. The morphotropic phase boundary was determined to be y=0.475 in $Pb[(Mn_{1/3}Sb_{2/3})_{0.05}Zr_yTi_{0.95-y}]O_3$ system and the piezoelectric properties of this composition was kp=0.59, Qm=1600 and $\varepsilon_r$=1150. Moreover, when 1-2 mol% of Sr are substituted, enhanced piezoelectric properties of kp=0.61, Qm=1600 and $\varepsilon_r$=1400 were shown. The temperature rising (ΔT) of a piezoelectric transformer with $Pb[Mn_{1/3}Sb_{2/3})_{0.05}Zr_{0.475}Ti_{0.475})]O_3 $ composition was $10^{\circ}C$, and the voltage step-up ratio was 500 when the output voltage was 4000V, whereas the ΔT was below $3^{\circ}C$ and the resonant frequency variation ($\Delta f_r$) as a function of load resistance was below 5% when the output voltage was 2000 V. These characteristics are superior to the properties of materials, which were substituted by Ca or without substitution.