• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.526-528
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• 1999

Epoxy resin has been used as matrix resin of advanced composites owing to ideally suitable properties and inherent physical and chemical properties for electrical and electronic insulation In this paper, in order to evaluate the performance of epoxy composites for out door insulation, variations of tracking resistance were investigated on the moisture absorption aging condition. Also, IPN methods were introduced in order to improve performance for out door use. As a result, it was confirmed that tracking resistance were degraded with boilling time. But, it was confirmed that specimen of IPN structure and KC-335 have the better tracking resistance properties than SIN structure by moisture absorption aging

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.597-600
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• 1999

A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon To reduce grain boundary effect, we performed a preferential grain boundary etching, POC$_3$ n-type emitter doping, and then ITO film growth on poly- Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth higher than 10 ${\mu}{\textrm}{m}$. RF magnetron sputter grown ITO films showed a low resistivity of 10$^{-4}$ $\Omega$ -cm and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 mW/$\textrm{cm}^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.700-706
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• 2001

In this paper, I have fabricated and measured the gallium nitride(GaN) based Schottky diodes, and have carried out analyses of degradation of Schottky barrier characteristics. To improve of degraded Schottky barrier characteristics, I have carried out several experiments such as N$_2$ plasma exposure, annealing in N$_2$ ambient and annealing after N$_2$ plasma exposure. In the results of these experiments, I have achieved that only annealing in N$_2$ ambient is enough to improve the Schottky barrier characteristics, are temperature of 700$\^{C}$ and time of 90 sec in N$_2$ ambient furnace. for the analysis of these experiments, I have carried out the measurement of electric characteristics and quantitative analysis of etching damage using AES(Aguger Electron Spectroscopy).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.529-531
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• 1999

In this Paper, the variable dielectric breakdown strengths of epoxy composites were investigated at belling absorption condition in order to observe the influences of moisture in out door use. Also. in order to improve withstand voltage properties at moisture absorbtion condition, IPN(interpenetrating polymer network) method was Introduced and the Influence was investigated. As Adding filler(SiO$_2$) classified by o(phr), 50(phr) and 100[phr] to two kinds of matrix resin, six kinds of specimens were manufactured. As a result, it was confirmed that dielectric breakdown strength wer degraded with boiling time and filer content increasing. But, it was confirmed that dielectric breakdown strength degrading rate were lowered by the Improvement of adhesion strength in IPN specimens.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.857-860
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• 2000

The objective of this paper is to demonstrate degradation phenomena through DC degradation tests and predicts degradation phenomena as a function of time from the tests. The ZnO varistor used in this investigation were fabricated by standard ceramic techniques. Especial, these were sintered in nitrogen atmosphere, at 2 h, for $1300^{\circ}C$. The conditions of DC degradation test were 115$\pm$$2^{\circ}C$for 0, 2, 4, and 8 h, respectively. To demonstrate the degradation phenomena of ZnO varistors, Voltagecurrent analyses were performed before and after the degradation test, and frequency analyses were used with the time of the degradation tests. It was found that the degradation occurred in not grain but grain boundary and the degradation behavior of varistors was unsymmetrically degraded with the direction of tests.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.859-862
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• 2008

We have realized static image on organic light emitting diodes (OLEDs) using photoluminescence degradation. Ultraviolet (UV) was irradiated to the glass side of device. UV power was 350 Wand the wavelength was 365 nm. The UV irradiation gives rise to the degradation of photoluminescence. Due to the degradation, the current density-voltage curve was shifted to the higher voltage side and the luminescence was also degraded by the current and photoluminescence drop. The negative imaged films were prepared to control the transmittance of UV. The UV light was passed through the film. By this method, the film image was transferred to the device with reversed image and the static image was realized on the OLED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.131-132
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• 2007

An AlGaN/GaN high electron mobility transistor(HEMT) was fabricated and the effect of photoelectrochemical oxidation of AlGaN/GaN surface was investigated. The oxidation of AlGaN surface was done in water at the bias of 10 V under the deep UV light illumination. The sheet resistance of the AlGaN/GaN structure was increased and gate leakage current of the HEMT was decreased by the oxidation. However, the transconductance of the HEMT was not degraded by the oxidation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.395-398
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• 2000

Reactive radio frequency (RF)magnetron sputter with incident angle has been used to deposit AlN thin film on a crystalline Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure. Also it has been shown that depostion rate of AIN thin film is affected by fraction Ar and $N_2$ partial pressure. But substrate temperature didn't affect depostion rate of AIN thin film . As sputtering pressure increased preferred orientation degraded. The internal stress changed from tensile stress to compressive stress as fraction of $N_2$ partial pressure increased. At low nitrogen partial pressure cermet$^{[1]}$ AIN thin film is obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.41-43
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• 2004

Dielectric thin films of $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ were deposited on $Pt(111)/Ti/SiO_2/Si$ substrates in situ by pulsed laser deposition(PLD) and annealed with different gases which are forming gas and oxygen gas, respectively. The diffusion of hydrogen into the ferroelectric film was caused by annealing process and resulted in the destruction of polarization. The dielectric properties of forming gas annealed PLT thin films, which are dielectric constant, ferroelectric characteristic, and leakage current characteristics, were degraded

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.150-152
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• 2005

We investigated the fabrication and characteristics of spin-polarized LEDs based on GaN using (Ga,Mn)N as spin injection source. (Ga,Mn)N thin films were found to exhibit the ferromagnetic ordering above room temperature and the negative MR up to room temperature. The electrical characteristics in spin LEDs did not degraded in spite of the insertion of (Ga,Mn)N films. In EL spectra of spin LEDs, it is confirmed that spin LEDs emit the strong light at 7 K as well as room temperature. These results suggest that it is possible to emit spin-polarized light in our spin LEDs.