• Journal of Distribution Science
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• v.17 no.4
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• pp.51-57
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• 2019

Purpose - This study aims to improve the distribution structure of the OLED market and develop cost-effective optimization techniques. Specifically, it is a study on the optimization of ferric chloride to improve the etch of SUS MASK for OLED. Research design, data, and methodology - Applying the optimal conditions of the experiment, the final confirmation was evaluated for improvement by the Process Capability Index (Cpk). It is possible to derive social performance such as improvement of precision of SUS MASK manufacturing, economic performance such as defect rate, reduction of waste generation and treatment cost, technological achievement such as SUS MASK production technology, improvement of profit structure of technology development and process improvement do. Results - The improvement of the Cpk before the improvement was made was confirmed to be 0.57% with a defect estimate of 25.07% with a failure estimate of 0.57% after the improvement, and 8.84% with a failure estimate of 0.57% level after the improvement. Conclusions - If the conclusions obtained from the specimen experiment are applied to the manufacturing process of SUS MASK, it will be possible to expect excellent cost-effective competitiveness due to the improvement of precision and reduction of defect rate to enhance the OLED market penetration.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Journal of Biosystems Engineering
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• v.16 no.3
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• pp.272-280
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• 1991

The aims of this study were to investigate the feasivility of analyzing a few sorting factors such as size, coloration and defect of apples with a monochrome image processing system and to find apparent properties which could be effectively used for apple sorting. The results are summarized as follows. 1. A computer program was made to analyze the projection area, coloration and defect of an apple with a monochrome image processing system. 2. The algorithm developed to compute the projedtion area of an apple was between on the proportional relation between a given reference area and the corresponding number of pixels, and the computing time was 0.74 to 0.82 second depending on the size of apple. 3. The coloration of an apple was expressed as the ratio of the gray value of a reference color to that of a given bounded area of the stem end surface (defined as coloration index), and the computing time was about 3.0 seconds with this algorithm. 4. Defect of an apple could be isolated by lowpass filtering and image subtraction but it took about 20 seconds in computing time. 5. The coloration of the Fuji apple could be classified into 3 to 4 groups by the coloration index and also, it was found that the correlation coefficient between the indices and sugar contents was 0.74. 6. The coloration index obtained from a given bounded area of the stem end side of the Fuji apple could represent the coloration of total surface with a correlation coefficient of 0.922.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.427-431
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• 2008

The mechanical property of a phosphore layer was investigated by measuring the resolution (LP/mm) and by positron annihilation spectroscopy and SEM. Image plate samples containing the phosphore layer were irradiated by X-rays in a hospital numerous times over a course of several years. The LP/mm values of a (Ba,Sr)FBr : Eu image plate irradiated by X-rays varied between 2.2 and 2.0 over a period of four years. Coincidence Doppler Broadening (CDB) positron annihilation spectroscopy was used to analyze defect structures. The S parameters of the samples from hospital use varied from 0.6219 to 0.6232. There was a positive relationship between the time of exposure to the X-rays and the S parameters. Most of the defects were found to have been generated by X-rays.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.121-125
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• 2016

The effect of temperature and pressure in the nitrogen ambient furnace on bulk micro defect (BMD) and denuded zone (Dz) is experimentally investigated. It is found that as pressure increases, Dz depth increases with a small decrease of BMD density in the range of temperature, $100{\sim}300^{\circ}C$. BMD density with hot isostatic pressure treatment (HIP) at temperature of $850^{\circ}C$ is higher than that without HIP while Dz depth is lower due to much higher BMD density. As the pressure increases, BMD density is increased and saturated to a critical value, and Dz depth increases even if BMD density is saturated. The concentration of nitrogen increases near the surface with increasing pressure, and the peak of the concentration moves closer to the surface. The nitrogen is gathered near the surface, and does not become in-diffusion to the bulk of the wafer. The silicon nitride layer near the surface prevents to inject the additional nitrogen into the bulk of the wafer across the layer. The nitrogen does not affect the formation of BMD. On the other hand, the oxygen is moved into the bulk of the wafer by increasing pressure. Dz depth from the surface is extended into the bulk because the nuclei of BMD move into the bulk of the wafer.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.382-386
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• 2011

It has been required to develop a defect detection system to perform defect detection capabilities after the bonding process in the production of RFID tags. However, we are difficult to design a system with understanding the characteristics of RFID tags and design concepts. Also we are difficult to modify even minor changes in features. In this paper, we design the defect RFID detection system using UML and object-oriented design techniques. We suggest the method for apply the UML Diagram to LabVIEW OOP and the technique for redesign the effect detection system's changes.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.7
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• pp.1725-1728
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• 2009

This research developed process control device and FGV pattern generating device essential for full gate visual inspection to improve process so that defect detection capability may be maximized in specified environment. The devices developed in this research, which can be swiftly replaced in case loss or error occurs, are anticipated to improve module yield as well as maintain tact loss near '0'. In addition, as a result of mounting H/W and S/W system to control detailed operation sequence in production line and executing performance check and verification, detection rates were 98.1% and 99.1% respectively for pixel defect by tact and line defect, and yield of the entire module process including gate and visual level test increased up to 98.3%.

• Tribology and Lubricants
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• v.31 no.6
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• pp.239-244
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• 2015

Chemical mechanical polishing (CMP) is one of the most important processes for enabling sub-14 nm semiconductor manufacturing. Moreover, post-CMP defect control is a key process parameter for the purpose of yield enhancement and device reliability. Due to the complexity of device with sub-14 nm node structure, CMP-induced defects need to be fixed in the CMP in-situ cleaning module instead of during post ex-situ wet cleaning. Therefore, post-CMP in-situ cleaning optimization and cleaning efficiency improvement play a pivotal role in post-CMP defect control. CMP in-situ cleaning module normally consists of megasonic and brush scrubber processes. And there has been an increasing effort for the optimization of cleaning chemistry and brush scrubber cleaning in the CMP cleaning module. Although there have been many studies conducted on improving particle removal efficiency by brush cleaning, these studies do not consider the effects of brush contamination. Depending on the process condition and brush condition, brush cross contamination effects significantly influence post-CMP cleaning defects. This study investigates brush cross contamination effects in the CMP in-situ cleaning module by conducting experiments using 300mm tetraethyl orthosilicate (TEOS) blanket wafers. This study also explores brush pre-treatment in the CMP tool and proposes recipe effects, and critical process parameters for optimized CMP in-situ cleaning process through experimental results.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.826-828
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• 2014

Recently trend of product is miniaturization. As a result, We need products surface as well as products internal defect inspection. Generally, Inspection products in production process uses a lot of optical inspection. However, This is difficult to internal inspection of products. We used optical device instead of X-ray generator. At the same time, We have developed system to determine the product defect. First, obtain X-ray image from Machine vision function. Next, Measured value is recognize suitability within error range. otherwise recognize defect. Results presence of defective products can be stored by user.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.3
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• pp.513-518
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• 2019

The non-destructive testing equipment using an eddy current was developed to check for defect in the vehicle transmission component. A defect master sample was made to test all types of defects that occur in the component and also an eddy current detector was manufactured and used to test and detect all kinds of defects. In addition, testing was held against the actual defective items to investigate the cause and type of defects, and a comparative study was conducted based on results from the examination. The software system of the eddy current detector was developed so that even a non-specialist can make assessment of detect in the component from the test results displayed on the monitor.