• Title/Summary/Keyword: defect engineering

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Application of the Murakami Approach for Prediction of Surface Fatigue of Cemented Carbides

  • Sergejev, Fjodor;Kubarsepp, Jakob;Preis, Irina
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.633-634
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    • 2006
  • The aim of present work is to link geometrical parameter of maximum area of structural defect $\sqrt{area}\;_{max}$ (proposed by Y. Murakami, 1983) with surface fatigue mechanisms. Determined relations allow making predictions of surface fatigue properties of cemented carbides (WC-Co hardmetal - H15 - 85wt% WC and 15wt %Co, TiC-based cermets - T60/8 - 60wt %TiC and Fe/8wt% Ni and T70/14 - 70wt %TiC and Fe/14wt% Ni) in conditions of rolling contact and impact cycling loading. Pores considered being equivalent to small defects. Three comparative defects conditions are distinguished: surface pore, just below free surface and interior pores. The Vickers hardness of binder (as main responsible for the fracture mechanism of hardmetal and cermets) assumed to be the basis of such assumption. The estimate of this prediction has been done by analyzing the pore sizes using the statistics of extremes. The lower bound of fatigue properties can be correctly predicted by considering the maximum occurring pore size.

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Development of Real-time Diagnosis Method for PEMFC Stack via Intermodulation Method (Intermodulation 방법에 의한 자동차용 연료전지 스택의 실시간 진단방법 개발)

  • Lee, Young-Hyun;Yoo, Seungyeol;Kim, Jonghyeon
    • Transactions of the Korean Society of Automotive Engineers
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    • v.22 no.7
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    • pp.76-83
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    • 2014
  • During PEMFC(Proton Exchange Membrane Fuel Cell) operation monitoring and diagnosis are important issues for reliability and durability. Stack defect can be followed by a critical cell voltage drop in the stack. One method for monitoring the cell voltage is CVM(Cell Voltage Monitoring), where all cells in the stack are electrically connected to a voltage measuring system and monitored these voltages. The other methods are based on the EIS(Electrochemical Impedance Spectroscopy) and on nonlinear frequency response. In this paper, intermodulation(IM) method for diagnosis PEMFC stack is introduced. To detect one or more critical PEMFC cell voltage PEMFC stack is excited by two or more test sinusoid current, and the frequency response of the stack voltage is analyzed. If one or more critical cell voltage exists, higher harmonics on the voltage frequency spectrum will appear. For the proposed IM method, stack simulation and experiments are conducted.

A Numerical Design and Feasibility Study of Self-Wastage Experiment Using Simulant Material in a Sodium Fast Reactor

  • Jang, Sunghyon;Takata, Takashi;Yamaguchi, Akira
    • Nuclear Engineering and Technology
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    • v.48 no.2
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    • pp.368-375
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    • 2016
  • A sodiume-water reaction takes place when high-pressured water vapor leaks into sodium through a tiny defect on the surface of the heat transfer tube in a steam generator of the sodium-cooled fast reactor. The sodiume-water reaction brings deterioration of the mechanical strength of the heat transfer tube at the initial leakage site. As a result, it damages the crack itself, which may eventually enlarge into a larger opening. This self-enlargement is called "self-wastage phenomenon." In this study, a simulant experiment was proposed to reproduce the self-enlargement of a crack and to evaluate the mechanism of the self-wastage. The damage on the surface of the crack was simulated by making the neutralization reaction with hydrochloric acid solution and sodium hydroxide solution. A numerical investigation was carried out to validate the feasibility of the approach and to determine experimental conditions. From the computation results, it is observed that when 5M HCl is injected into 5M of NaOH with 0.05 m/s inlet velocity, the temperature at the surface near the crack increased over 319.26 K. The computational results show that the self-wastage phenomenon is capable of being reproduced by the simulant experiment.

Reconstruction of Vacancy Defects in Graphene and Carbon Nanotube

  • Lee, Gun-Do;Yoon, Eui-Joon;Hwang, Nong-Moon;Wang, Cai-Zhuang;Ho, Kai-Ming
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.340-340
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    • 2010
  • Various structures of vacancy defects in graphene layers and carbon nanotubes have been reported by high resolution transmission electron microscope (HR-TEM) and those arouse an interest of reconstruction processes of vacancy defects. In this talk, we present reconstruction processes of vacancy defects in a graphene and a carbon nanotube by tight-binding molecular dynamics (TBMD) simulations and by first principles total energy calculations. We found that a structure of a dislocation defect with two pentagon-heptagon (5-7) pairs in graphene becomes more stable than other structures when the number of vacancy units is ten and over. The simulation study of scanning tunneling microscopy reveals that the pentagon-heptagon pair defects perturb the wavefunction of electrons near Fermi level to produce the $\sqrt{3}\;{\times}\;\sqrt{3}$ superlattice pattern, which is in excellent agreement with experiment. It is also observed in our tight-binding molecular dynamics simulation that 5-7 pair defects play a very important role in vacancy reconstruction in a graphene layer and carbon nanotubes.

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Adsorption Mechanism of Radioactive Cesium by Prussian Blue (프러시안 블루(PB)의 방사성 세슘 흡착 메커니즘 연구)

  • Jang, Sung-Chan;Kim, Jun-Yeong;Huh, Yun Suk;Roh, Changhyun
    • Journal of Radiation Industry
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    • v.9 no.3
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    • pp.127-130
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    • 2015
  • Since the accident at the Fukushima Daiichi power plant, Prussian blue (PB) has attracted increasing attention as a material for use in decontaminating the environment. We have focused the fundamental mechanism of specific $Cs^+$ adsorption into PB in order to develop high-performance PB-based $Cs^+$ adsorbents. The ability of PB to adsorb Cs varies considerably according to its origin such as what synthesis method was used, and under what conditions the PB was prepared. It has been commonly accepted that the exclusive abilities of PB to adsorb hydrated $Cs^+$ ions are caused by regular lattice spaces surrounded by cyanido-bridged metals. $Cs^+$ ions are trapped by simple physical adsorption in the regular lattice spaces of PB. $Cs^+$ ions are exclusively trapped by chemical adsorption via the hydrophilic lattice defect sites with proton-exchange from the coordination water. Prussian blue are believed to hold great promise for the clean-up of $^{137}Cs$ contaminated water around nuclear facilities and/or after nuclear accidents.

Defect-free 4-node flat shell element: NMS-4F element

  • Choi, Chang-Koon;Lee, Phill-Seung;Park, Yong-Myung
    • Structural Engineering and Mechanics
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    • v.8 no.2
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    • pp.207-231
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    • 1999
  • A versatile 4-node shell element which is useful for the analysis of arbitrary shell structures is presented. The element is developed by flat shell approach, i.e., by combining a membrane element with a Mindlin plate element. The proposed element has six degrees of freedom per node and permits an easy connection to other types of finite elements. In the plate bending part, an improved Mindlin plate has been established by the combined use of the addition of non-conforming displacement modes (N) and the substitute shear strain fields (S). In the membrane part, the nonconforming displacement modes are also added to the displacement fields to improve the behavior of membrane element with drilling degrees of freedom and the modified numerical integration (M) is used to overcome the membrane locking problem. Thus the element is designated as NMS-4F. The rigid link correction technique is adopted to consider the effect of out-of-plane warping. The shell element proposed herein passes the patch tests, does not show any spurious mechanism and does not produce shear and membrane locking phenomena. It is shown that the element produces reliable solutions even for the distorted meshes through the analysis of benchmark problems.

A study on the S/W application for a riser design process for fabricating axisymmetric large offshore structures by using a sand casting process

  • Seo, Hyung-Yoon;Seo, Pan-Ki;Kang, Chung-Gil
    • International Journal of Naval Architecture and Ocean Engineering
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    • v.11 no.1
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    • pp.462-473
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    • 2019
  • The effects of the location and dimension of the gate, location, and volume of the feeder, application of a chill, chill volume, and heating method of the feeder with respect to the effect of the mold-designing technologies on the defect status of the products are described. It is possible to increase the solidification time of the feeder by heating feeder. Furthermore, the pressure generated from the feeder is imposed on a product, and this decreases the generation of shrinkage porosities. In this study, two types of gating and feeding systems had been proposed: the bottom L-type junctions and the top L-type junctions. Additionally, solidification behaviors, such as solidification time, shrinkage porosities, weight percentage of chill system to product, hot spot, and solidification time ratio (=Solidification time of feeder/solidification time of product), are extensively analyzed by using commercial casting simulation software. Based on the solidification behaviors, reasonable mold design, feeding system, critical feeder heating temperature, and solidification time ratios are proposed in the sand casting process for the fabrication of carrier housing in order to reduce the casting defects and to increase the recovery rate.

Tool Lifecycle Optimization using ν-Asymmetric Support Vector Regression (ν-ASVR을 이용한 공구라이프사이클 최적화)

  • Lee, Dongju
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.43 no.4
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    • pp.208-216
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    • 2020
  • With the spread of smart manufacturing, one of the key topics of the 4th industrial revolution, manufacturing systems are moving beyond automation to smartization using artificial intelligence. In particular, in the existing automatic machining, a number of machining defects and non-processing occur due to tool damage or severe wear, resulting in a decrease in productivity and an increase in quality defect rates. Therefore, it is important to measure and predict tool life. In this paper, ν-ASVR (ν-Asymmetric Support Vector Regression), which considers the asymmetry of ⲉ-tube and the asymmetry of penalties for data out of ⲉ-tube, was proposed and applied to the tool wear prediction problem. In the case of tool wear, if the predicted value of the tool wear amount is smaller than the actual value (under-estimation), product failure may occur due to tool damage or wear. Therefore, it can be said that ν-ASVR is suitable because it is necessary to overestimate. It is shown that even when adjusting the asymmetry of ⲉ-tube and the asymmetry of penalties for data out of ⲉ-tube, the ratio of the number of data belonging to ⲉ-tube can be adjusted with ν. Experiments are performed to compare the accuracy of various kernel functions such as linear, polynomial. RBF (radialbasis function), sigmoid, The best result isthe use of the RBF kernel in all cases

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

  • Hussain, Laiq;Pettersson, Hakan;Wang, Qin;Karim, Amir;Anderson, Jan;Jafari, Mehrdad;Song, Jindong;Choi, Won Jun;Han, Il Ki;Lim, Ju Young
    • Journal of the Korean Physical Society
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    • v.73 no.11
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    • pp.1604-1611
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    • 2018
  • Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of $GaAs_xSb_{1-x}$, $In_{1-x}Ga_xSb$, and $InAs_xSb_{1-x}$ with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from $2{\mu}m$ to $12{\mu}m$ in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from $InAs_xSb_{1-x}$ and $In_{1-x}Ga_xSb$ samples even at room temperature show promising potential for IR photodetector applications.

Analysis of Deep-Trap States in GaN/InGaN Ultraviolet Light-Emitting Diodes after Electrical Stress

  • Jeong, Seonghoon;Kim, Hyunsoo;Lee, Sung-Nam
    • Journal of the Korean Physical Society
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    • v.73 no.12
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    • pp.1879-1883
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    • 2018
  • We analyzed the deep-trap states of GaN/InGaN ultraviolet light-emitting diodes (UV LEDs) before and after electrical stress. After electrical stress, the light output power dropped by 5.5%, and the forward leakage current was increased. The optical degradation mechanism could be explained based on the space-charge-limited conduction (SCLC) theory. Specifically, for the reference UV LED (before stress), two sets of deep-level states which were located 0.26 and 0.52 eV below the conduction band edge were present, one with a density of $2.41{\times}10^{16}$ and the other with a density of $3.91{\times}10^{16}cm^{-3}$. However, after maximum electrical stress, three sets of deep-level states, with respective densities of $1.82{\times}10^{16}$, $2.32{\times}10^{16}cm^{-3}$, $5.31{\times}10^{16}cm^{-3}$ were found to locate at 0.21, 0.24, and 0.50 eV below the conduction band. This finding shows that the SCLC theory is useful for understanding the degradation mechanism associated with defect generation in UV LEDs.