• Development and Reproduction
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• v.16 no.3
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• pp.155-168
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• 2012

Therapeutic cancer is a long lasting and turbulent history accompany with the milestones in surgical intervention, chemotherapy and radiotherapy. In the past decade, however, metastatic cancer still obstinately exists challenging the professional scientist. Beside the major forms of cancer treatment, Diphtheria toxin (DT) which is produced by a pathogenic strain of bacterium Corynebacterium diphtheria to shield themselves against the other dangerous organism, have been researched as a potential candidate to overcome the drawback such as non-specific, non-effect to drug resistant cancer cell and side effects when using chemotherapy and radiotherapy. In the context of suicide gene therapy, the DT expression under controlling of tissue-specific promoter will be targeted in cancer cell but defect in normal cell. The molecular mechanism, characteristic of DT-bases therapy and prominent achievements of preclinical and clinical studies for the past decade are summarized and discussed in this review.

• The Journal of Asian Finance, Economics and Business
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• v.3 no.1
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• pp.15-32
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• 2016

Between 2010 and 2012, former Bank of Japan Governor Shirakawa argued, in series of speeches, that Japan's economic performance, when compared to that of other G7 nations, was stronger after 1990 than appreciated by the critics. In May 2012, Nobel prize-winning economist and Princeton University professor Paul Krugman echoed a similar sentiment in a Financial Times interview. This analysis expands on these assertions and asks to what extent they are supported by cross-section data for the G7. As reviewed below, to date, no idiosyncratic explanation has arisen to explain the Japanese slowdown-perhaps this is the correct explanation: the slowdown in Japan, once adjusted for demographics, is less severe than in other G7 countries and, as recently noted by Eichengreen, Park, and Shin (2015), TFP growth in a number of other nations followed similar patterns. Focused on labor productivity, far from a laggard, Japan's performance ranks near the best in the G7.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.204.1-204.1
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• 2015

We studied the electrical properties and gate bias stress (GBS) stability of thin film transistors (TFTs) with multi-stacked InZnO layers. The InZnO TFTs were fabricated via solution process and the In:Zn molar ratio was 1:1. As the number of InZnO layers was increased, the mobility and the subthreshold swing (S.S) were improved, and the threshold voltage of TFT was reduced. The TFT with three-layered InZnO showed high mobility of $21.2cm^2/Vs$ and S.S of 0.54 V/decade compared the single-layered InZnO TFT with $4.6cm^2/Vs$ and 0.71 V/decade. The three-layered InZnO TFTs were relatively unstable under negative bias stress (NBS), but showed good stability under positive bias stress (PBS).

• Korean Journal of Head & Neck Oncology
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• v.12 no.1
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• pp.81-87
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• 1996

We studied the clinical charcteristics of 265 cases of nasopharyngeal carcinomas diagnosed at Korea Cancer Center Hospital over a span of 8 years from Jan. 1987. Male were 187 and Female were 78 and male: female ratio was 2.4 : 1. The age distribution ranged from 2nd decade to 9th decade evenly and mean age was 46.1 years old. Histopathologically squamous cell carcinoma (WHO type 1, 2, 60.8%) were 161 cases and undifferentiated carcinoma (WHO type 3, 39.2%) were 104 cases. Main symptoms and signs were neck mass 199 cases (75.1%), ear symptoms 126(47.5%), nasal symptom 101 (38.1%). The distribution of anatomical subsites were posterior wall 75 (24.7%), lateral wall 175 (72.8%), Inferior wall 15 (2.5%). Tumor staging by AJCC classification, 1992, distributed with stage I 3 cases (1.1%), stage II 5 cases (1.9%), stage III 24 cases (9.1%), stage IV 233 cases (87.9%).

• The Journal of the Korean dental association
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• v.37 no.2 s.357
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• pp.126-130
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• 1999

Forty healty patients (15 males and 25 females) between 19 and 45 years of age with mandibular impacted third molar were selected for this tudy. A visual analog scale from 0 to 100 was used on the day of the procedure and on the first postoperative day for patient pain assessment. 1. In comparative study according to anesthesia, preoperative medication, depth of impacted teeth and gender, there were a variable range of pain and no significant differences statistically. 2. Intraoperative pain was the highest in the 2nd decade and first postoperative pain was the highest in the 3rd decade (P=0.0398) 3. Intraoperative and postoperative pain of operative duration below 10 minutes were the lower than that between 11 to 20 minutes (P=0.0398)

• Current Photovoltaic Research
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• v.3 no.2
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• pp.45-49
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• 2015

In the past few decade's researchers, scientists, engineers of photovoltaic (PV) industry are working towards low cost high efficiency Si solar cells. Over the last decade the interest in back contact solar cell has been acquiring as well as a gradual introduction to industrial applications is increasing. As an alternative to conventional solar cells with a front and rear contact, the back-contact cells has remained a research topic. The aim of this work is to present a comprehensive summary of results incurred in the back contact back junction solar cells such as interdigitated back-contact (IBC), emitter wrap-through (EWT) and metallization wrap-through (MWT) over the years.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.7
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• pp.1268-1274
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• 2007

A recently developed methods for the on-site calibration of the voltage transformer (VT) comparator system have been reviewed in the paper. The method utilizes the several traveling standards consisting of the VT, the non-reactive standard resistors, the wide ratio error VT, and the decade resistors. The VT is used for the absolute evaluation of a standard VT belonging to the industry. The non-reactive standard resistor and wide ratio error VT are used for the linearity check of errors in the voltage comparator of the industry. The decade resistors are used for evaluation of a VT burden of the industry.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1288-1291
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• 2007

We investigated the effect of Cr thickness on the electrical properties of triisopropylsilyl pentacene organic thin-film transistor (OTFT) employing suspended source-drain electrode. With Cr thickness of 10 nm, the field-effect mobility, on/off ratio and subthreshold slope were $0.017\;cm^2/Vs$, $8.78\;{\times}\;10^3$ and 10 V/decade, respectively. By increasing the Cr thickness to 100 nm, the fieldeffect mobility was increased to $0.032\;cm^2/Vs$, on/off ratio to $1.12{\times}10^5$ and subthreshold slope to 1 V/decade.

• Journal of Chest Surgery
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• v.11 no.1
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• pp.26-34
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• 1978

We observed 82 cases of primary lung cancer clinically and statistically, which had been experienced at the dept. of thoracic surgery, Chonnam University Hospital, during the period of 13 years from 1964 to 1967. The results obtained were as follows: Peak incidence of age was from 5th decade to 6th decade, and the ratio of male to female was 3: 1. The frequency of lung cancer was higher in the heavy smoker than in the lighter smoker, and undifferentiated carcinoma showed low resectability in spite of the shorter clinical duration. Major symptoms were coughing and chest tightness & pain, especially coughing was initial symptom in the majority of patients. Of the 82 cases, operation was performed in the 32 cases [39%], but resection was possible in the 22 cases [27%]. The delaying factors led patients to an inoperable stage were physician’s misdiagnosis of bronchogenic carcinoma due to non-specific symptoms and signs of the patients, old age patients were dependence on herb medicine, and poor economical condition of the patients in our region especially. Basic conditions of treatment in lung cancer were early detection & early surgery, so, chest P-A would be checked per 3 to 6 months interval associated with sputum cytology in the smoker over 45 age routinely.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.61-64
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• 1994

The NMOSFET with gate length of 0.1$\mu$m is fabricated by mix-and-match method. In this device, the electron beam lithography is used to form the gate layer, while other layers are formed by the stepper. The gate oxide is 7nm thick, and the device structure is normal LDD structure. The saturation Gm for gate length of 0.1$\mu$m is 246mS/mm. The subthreshold slope is 180mV/decade for 0.1$\mu$m gate length, but the slope is 80mV/decade for 0.3$\mu$m gate length.