• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.326-331
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• 2005

We obtain analytical expressions the magnetic field of ferrites for DC magnetron sputtering device, which has been widely used for vacuum thin film deposition, and suggested the equation on maximum radius of the magnetic field by analytic solution. Also, the analytic results are compared with some calculations using magnetization elements of right-angled hexahedron.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1254-1255
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• 2008

Low cost TCO(Transparent Conductive oxide) thin films were prepared by 6" DC/RF magnetron sputtering systems. For the AZO preparation processes a 99.99% AZO target (Zn: 98 wt.%, $Al_2O_3$: 2 wt.%) was used. In order to verify the optical properties of the AZO thin films, the transparency was tested with sputtering conditions using UV-visible spectroscopy. As a result, we got the transmittance properties over 80% and low resistivity in the sputtering conditions of DC 200[W], Ar 30 [sccm], 1 [mtorr], 20 [min].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.160-163
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• 1994

Tungsten and Tungsten Nitride thin films deposited by RF and DC sputtering and the resistivity of these films was measured. We deposited tungsten and tungsten nitride films by RF and DC sputtering at various conditions and derived equations that determines the resistivity and sheet resistivity by stabilizing the basic theory. We investigated properties of the resistivity and sheet resistivity of theme films under various conditions like temperature of substrate, flow rate of the argon gas and content of nitrogen from nitrogen-argon mixtures

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.34-35
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• 2014

탄소는 부식되지 않고 친환경적이며 물리화학적 안정성 및 내마모성 등 많은 장점을 가지고 있어 많은 연구들이 진행 되고 있다. 하지만 탄소 박막은 전도도가 낮은 단점을 가지고 있다. 본 연구에서는 탄소 박막의 전도성과 플라즈마 변수와의 상관관계를 규명 하고자 하였다. 박막의 특성은 X-ray Diffraction (XRD), Hall measurement, Contact angle, Raman spectroscopy 등의 분석기기를 사용하여 측정하였고 그 결과 DC보다 Pulse DC를 사용할 때 더 좋은 전기적 특성을 나타내었다.

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.441-442
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• 2007

We deposited nickel oxide(NiO) thin films on silicon(Si) substrates at Room temperature and $500^{\circ}C$ using a nickel target by reactive DC and RF sputtering. In addition, we anneal to NiO thin films deposited at room temperature. Using spectroscopic eillipsometry, we obtained optical characteristics of every films. We discussed relations of the optical and structural properties of NiO thin films with the oxygen flow rate, substrate temperature and annealing temperatures. Refraction was decreased and defect was increased when NiO thin films was annealed. We also analyzed the electrical characteristics of NiO films which deposited DC and RF sputtering method.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.178-179
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• 2011

2차 연료 전지용 금속 분리판 중 스테인리스 스틸은 많은 연구가 진행 되어 왔지만, 알루미늄은 거의 연구가 진행되지 않고 있다. 따라서 이번 연구는 반응성 DC 마그네트론 스퍼터링법으로 스테인리스 와 알루미늄 기판에 TiN 박막을 증착한 후, 기판의 종류에 따른 TiN 박막의 물성을 비교 검토하였다.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.699-707
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• 1995

The material that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. It has many fields of application such as Solar Cell, Liquid Crystal display, Vidicon on T.V, transparent electrical heater, selective optical filter, and a optical electric device , etc. In the recent papers on several TCO( transparent conducting oxide ) material, the study is mainly focusing on ITO(indium tin oxide) because ITO shows good results on both optical and electrical properties. Nowaday, in the development of LCD(Liquid Crystal display), the low temperature process to reduce the production cost and to deposit ITO on polymer substrate (or low melting substrate) has been demanded. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. The resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140.deg. C. is 1.6*10$\^$-4/.ohm..cm with 85% optical transmission in viaible ray.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.138-143
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• 2003

A double spiral thin-film inductor with a NiFe magnetic core is integrated with DC-DC converter IC. The NiFe core is deposited on a polyimide film as the thinckness of NiFe is 2.5~3.5 ${\mu}$m. Then, copper conductor line is deposited on the NiFe core with double spiral structure. Process integration is performed by sequential processes of etching the polyimide film deposited both top and bottom of the NiFe core and electroplation copper conductor line from exposed metal pad of the DC-DC converter IC. Process integration is simplified by elimination planarization process for top core because the proposed thin-film inductor has a bottom NiFe core only. Inductor of the fabricated monolithic DC-DC converter IC is 0.53 ${\mu}$H when the area of converter IC and thin-film inductor are 5X5$\textrm{mm}^2$ and 3.5X2.5$\textrm{mm}^2$, respectively. The efficiency is 72% when input voltage and output voltage are 3.5 V and 6 V, respectively at the operation frequency of 8 MHz.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.342-347
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• 2011

Nanocrystalline TiN films were deposited on Si(100) substrate using asymmetric pulsed DC reactive magnetron sputtering. We investigated the growing behavior and the structural properties of TiN films with change of duty cycle and pulsed frequency. Grain size of TiN films were decreased from 87.2 nm to 9.8 nm with decrease of duty cycle. The $2{\theta}$ values for (111) and (200) crystallographic planes of the TiN films were also decreased with decrease of duty cycle. This shift in $2{\theta}$ could be attributed to compressive stress in the TiN coatings. Thus, the change of plasma parameter has a strong influence not only on the microstructure but also on the residual stresses of TiN films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.45-46
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• 2008

Hard coatings of TiN which exhibit a large variation in their electrical resistivities, have been prepared in magnetron sputtering system using bipolar pulsed DC generator. TiN coatings have also been prepared using a DC generator in the same sputtering system under identical deposition conditions. Microstructural, Mechanical, Crystallographic properties of TiN films using continuous and bipolar pulsed DC generators were examined. Field emission scanning microscope and Nanoindenter have been used to characterize the coatings.