• Title/Summary/Keyword: dB(V)

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A Study on the Technical Regulation of Weak Electric Filed Strength Radio Equipment about 8.2Hz Frequency Band (8.2MHz 대역 미약 전계강도 무선기기의 출력기준에 관한 연구)

  • Kim, Sun-Youb;Ra, Yoo-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.12
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    • pp.2498-2504
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    • 2009
  • This paper compared the output limit value of the Korean weak electric field strength wireless device in the 8.2MHz band with the standard values of foreign countries. Through this, the study confirmed that the Korean regulation was lower by about 10-20dB than those of the USA or Europe. In order to prove this, the study measured outputs by entrusting the 8.2MHz EAS system to two measuring companies. As a result of these measurements, electric field strengths were shown to be $70.6dB{\mu}V/m$ and $68.3dB{\mu}V/m$ respectively, and these values were confirmed to exceed the current Korean standard of $59.8dB{\mu}V/m$. Accordingly, it is deemed necessary to review the specifications of the Korean standard in the 8.2MHz band.

A Study on the Technical Regulation of Weak Electric Filed Strength Radio Equipment about 58kHz Frequency Band (58kHz 대역 미약 전계강도 무선기기 기술 기준에 관한 연구)

  • Park, Hyoung-Keun;Kim, Sun-Youb;Ra, Yoo-Chan
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.10 no.9
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    • pp.2319-2325
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    • 2009
  • This paper compared the output limits value of the Korean weak electric field strength wireless device in the 58kHz band with the standard values of foreign countries. Through this, the study confirmed that the Korean regulation was lower by about 50dB than those of the USA or Europe. In order to prove this, the study measured outputs by entrusting the 58kHz EAS system to two measuring companies. As a result of these measurements, electric field strengths were shown to be $112dB{\mu}V/m$ and $08dB{\mu}V/m$ respectively, and these values were confirmed to exceed the current Korean standard of $102.7dB{\mu}V/m$. Accordingly, it is deemed necessary to review the specifications of the Korean standard in the 58kHz band.

Study on the Characteristics of Noise/Vibration in the Upright Laying Hen House (직립식 산란계사 내의 소음 진동 발생 현황 조사연구)

  • Lee S.J.;Chang D.I.;Chang H.H.
    • Journal of Animal Environmental Science
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    • v.12 no.1
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    • pp.21-28
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    • 2006
  • This study was carried out to measure and analyze the characteristics of noise and vibration, and to analyze their effects on the productivity of layers, mechanical troubles, and abnormal wear-out failure of facilities and equipment of the layer house. The measurements of noise and vibration were taken at 13 layer farms nationwide for the operations of feed supplier system, feed distribution system, automatic egg collection system, ventilation system, blot conveyer for layer feces, and fur the case of with and without their operation by a sound level meter and a vibration measuring system in the layer house equipped with upright multi-tier cages. Measurement results showed that normal times were noise(N) 82 dB and vibration(V) 0.2072 cm/s, feed supplier system were 90 dB(N) and 2.8560 cm/s(V), feed distribution system were 90 dB(N) and 2.0222 cm/s(V), automatic egg collection system were 87 dB(N) and 0.1865 cm/s(V), ventilation system 88 dB(N) and 2.5364 cm/s(V), belt conveyer fur layer feces were 88 dB(N) and 0.2387 cm/s(V), and then maximum values of noise and vibration were 90 dB and 2.8560 cm/s, respectively, when feeding systems(feed supplying system and feed distribution system) were operated. Based on these results, an experiment is being conducted to find out the effect of noise and vibration on the productivity of layers in the layer house equipped with upright multi-tier cages.

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Design of 900 MHz CMOS Low Noie Amplifier (900 MHz CMOS 저잡음 증폭기의 설계)

  • 윤상영;윤헌일;정용채;정항근;황인갑
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.6
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    • pp.893-899
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    • 2000
  • A 900 MHz low-noise amplifier(LNA) with a measured noise figure of 4.8 dB and an associated gain of 13.2 dB was fabricated in a 0.65 $\mu$m CMOS. The inductive source architecture of offers the possibility of achieving the best noise performance. At 900 MHz, the fabricated LNA dissipates 39 mW from a single 3 V power supply including the bias circuitry and provides -26dB input return loss, -17 dB output return loss, and an input 1-dB compression level of -12 dBm.

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Printing of Polyester and Cotton Blends using Diaminoanthraquinone Disperse Dye and Monochlorotriazinyl Reactive Dye Mixtures (디아미노안트라퀴논계 분산염료/모노클로로트리진형 반응염료에 의한 폴리에스테르/면 혼방 직물의 날염)

  • 강숙녀
    • Textile Coloration and Finishing
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    • v.6 no.2
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    • pp.30-39
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    • 1994
  • To study the printing behaviors of Polyester and cotton(P/C) fabrics printed with disperse and reactive dyes, the effects of alkalis on the fixation of reactive dyes and the alkali-stability of disperse dyes in various methods of fixation were examined. The anthraquinone disperse dyes which have diamino derivatives as substituents without hydroxy group, such as C.I. Disperse Violet 1(D.V.1), C.I. Disperse Violet 28(D.V.28) and C.I.Disperse Blue 60(D.B.60) showed good results of fixation without regard to the concentration of NaHCO$_3$. In case of high temperature steaming(HTS) and unsaturated steaming(US)/HTS, D.V. 1 was alkali-stable and effective for P/C printing. A good result was obtained with D.V.1 and C.I.Reactive Orange 13(R.O.13) paste of 4% $K_{2}CO_{3}$. It was found that the unfixed D.V.28 bearing chloro group can hinder the fixation of monochlorotriaxinyl reactive dyes, and D.B.60 made little stain on 100% cotton. In thermosol(Tm), the dye uptake of D.V.1 was not decreased so much, but those of D.V.28 and D.B.60 were greatly decreased.

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V-band CPW 3-dB Directional Coupler using Tandem Structure (Tandem구조를 이용한 V-band용 CPW 3-dB 방향성 결합기)

  • Moon Sung-Woon;Han Min;Baek Tae-Jong;Kim Sam-Dong;Rhee Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.7 s.337
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    • pp.41-48
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    • 2005
  • We design and fabricate 3-dB tandem directional coupler using the coplanar waveguide structure which is applicable to balanced amplifiers and mixers for 60 GHz wireless local area network system. The coupler comprises the multiple-sectional parallel-coupled lines to facilitate the fabrication process, and enable smaller device size and higher directivity than those of the conventional 3-dB coupler employing the edge-coupled line. In this study, we adopt the structure of two-sectional parallel-coupled lines of which each single-coupled line has a coupling coefficient of -8.34 dB and airbridge structure to monolithically materialize the uniplanar coupler structure instead of using the conventional multilayer or bonded structure. The airbridge structure also supports to minimize the parasitic components and maintain desirable device performance in V-band (50$\~$75 GHz). The measured results from the fabricated couplers show couplings of 3.S$\~$4 dB and phase differences of 87.5$^{\circ}{\pm}1^{\circ}$ in V-band range and show directivities higher than 30 dB at a frequency of 60 GHz.

Monolithic SiGe HBT Feedforward Variable Gain Amplifiers for 5 GHz Applications

  • Kim, Chang-Woo
    • ETRI Journal
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    • v.28 no.3
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    • pp.386-388
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    • 2006
  • Monolithic SiGe heterojunction bipolar transistor (HBT) variable gain amplifiers (VGAs) with a feedforward configuration have been newly developed for 5 GHz applications. Two types of the feedforward VGAs have been made: one using a coupled-emitter resistor and the other using an HBT-based current source. At 5.2 GHz, both of the VGAs achieve a dynamic gain-control range of 23 dB with a control-voltage range from 0.4 to 2.6 V. The gain-tuning sensitivity is 90 mV/dB. At $V_{CTRL}$= 2.4 V, the 1 dB compression output power, $P_{1-dB}$, and dc bias current are 0 dBm and 59 mA in a VGA with an emitter resistor and -1.8 dBm and 71mA in a VGA with a constant current source, respectively.

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Studies on the High-gain Low Noise Amplifier for 60 GHz Wireless Local Area Network (60 GHz 무선 LAN의 응용을 위한 고이득 저잡음 증폭기에 관한 연구)

  • 조창식;안단;이성대;백태종;진진만;최석규;김삼동;이진구
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.11
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    • pp.21-27
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    • 2004
  • In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.

Sensitivity Improvement of 3-D Hall Sensor using Anisotropic Etching and Ni/Fe Thin Films (트랜치 구조를 갖는 3차원 홀 센서의 감도 개선에 관한 연구)

  • 이지연;최채형
    • Journal of the Microelectronics and Packaging Society
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    • v.8 no.4
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    • pp.17-23
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    • 2001
  • The 3-D Hall sensor has two horizontal magnetic field sensing parts ($\chi$, y components) and one vertical magnetic field sensing part (z component). For conventional, 3-D Hall sensor it is general that the sensitivity for $B_{z}$ is about 1/10 compared with those for $B_\chi$ or $B_y$. Therefore, in this work, we proposed 3-D Hall sensor with new structure. We have increased the sensitivity about 6 times to form the trench using anisotropic etching. And we have increased the sensitivity for the $B_z$ by 80% compared with those of $B_\chi$ and$B_y$ using deposition of the ferromagnetic thin films on the bottom surface of the wafer to concentrate the magnetic fluxes. When the input current was 3 mA, sensitivities of the fabricated sensor with Ni/Fe film for $B_\chi, B_y$ and $B_{z}$ were measured as 120.1 mV/T, 111.7 mV/T, 95.3 mV/T, respectively. The measured linearity of the sensor was within $\pm$3% of error.

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New Synthesis of 2-Substituted Imidazo[2, 1-b]thiazoles and their Antimicrobial Activities

  • Mahfouz, A.Abdel Aziz;Elhabashy, F.M.
    • Archives of Pharmacal Research
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    • v.13 no.1
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    • pp.9-13
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    • 1990
  • 4, 5-Diphenyl-2-mercaptiomidazole (I) was reacted with hydraziodyl halides IIa-d togive the S-alkyl derivatives III-a-d. Cyclization of IIIa-d afforded imidazo[2, 1-b]-thiazole derivatives Vla, b and VII. Treatment of 1 with a-chloroethylacetoaccetate (IV) gave ethyl 2(4, 5-diphenyl-2-imidazolinylthio)-3-keto-butyrate (V). Compound V coupled with benzendiazonium chloride to give the corresponding phenylhydrazo compound IIId. On heating V with polyphosphoric acid, cyclization took place and 2-acetyl-5, 6-diphenyl-imidazo [2, 1-b] thiazol-3-one (VIII) was obtained. The compound VIII was condensed with aromatic aldehydes to yield the cinnamoyl derivatives 1Xa, b. The antimicrobial activities of compounds IIIa-d, V, VIa, VII were examined.

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