• Title/Summary/Keyword: d.c field

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Fabrication of SiC Schottky Diode with Field oxide structure (Field Oxide를 이용한 고전압 SiC 쇼트키 diode 제작)

  • Song, G.H.;Bahng, W.;Kim, S.C.;Seo, K.S.;Kim, N.K.;Kim, E.D.;Park, H.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.350-353
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    • 2002
  • High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

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Discharge Characteristics of a Heavy Liquid Jet (개수로의 배수량특성)

  • 전용권
    • Water for future
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    • v.15 no.1
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    • pp.63-70
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    • 1982
  • The characteristics of a two-dimensional jet through a symmetric slot in a gravity field are considered here as an extension of a gravity-free problem. The coefficient of discharge $C_d$ is found to be $C_d~0.61102(1+0.31857$\varepsilon$^2)$ in terms of a small parameter $\varepsilon$. The shape of jet is derived and computed correctly up to first order.

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A Land Use Information of the C.B.D. in Daejeon City (대전시 도심의 토지 이용 정보)

  • Youn, In-Hyeok
    • The Journal of Information Technology
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    • v.10 no.4
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    • pp.1-10
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    • 2007
  • The C.B.D(Central Business District), called the central place of the urban area, is core of the city. It is consists of variety services. This study is aimed at analyzing the land use of the C.B.D. in Daejeon. Deajeon Metropolitan City site $36^{\circ}11'{\sim}36^{\circ}30'N,\;127^{\circ}15'{\sim}127^{\circ}34'E$. The field survey area is JoongAng-ro neighboring area, partial EunHaing-dong. The results are as follows: First, The land use of surveyed area is concentrate on variety services, because of excellent accessibility. Second, The land use of ground floor(Fl) and second floor(F2) has services for the customers convenience to approach. Third, The land use of surveyed area has undergone a lot of changes over the last three years(2004. 11~2007. 11.)

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Synthesis and Properties of Carbon Nanotube Paste with Different Inorganic Binders for Field Emission Display

  • Park, Jae-Hong;Moon, Jin-San;Nam, Joong-Woo;Park, Jong-Hwan;Berdinsky, A.S.;Yoo, Ji-Beom;Lee, C.G.;Park, Chong-Yun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.468-470
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    • 2004
  • CNT pastes with different inorganic binder such as glass frit and spin on glass (SOG) were synthesized by using multi-walled nanotube (MWNT) grown by CVD. The uniformity of cathode layer after firing was enhanced and the emission current density at an applied field of 7.95V/${\mu}m$ increased from 133${\mu}A$/$cm^2$ to 265${\mu}A$/$cm^2$ when inorganic binder changed from glass frit to SOG. The emission properties of CNT pastes with SOG were stable and uniform although firing was carried out at relatively high temperature of 450$^{\circ}C$ under air. It is concluded that SOG is more suitable inorganic binder than glass frit for field emission application.

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Thermally Assisted Carrier Transfer and Field-induced Tunneling in a Mg-doped GaN Thin Film (Mg가 첨가된 GaN 박막에서 캐리어 전이의 열적도움과 전계유도된 터러링 현상)

  • Chung, Sang-Geun;Kim, Yoon-Kyeom;Shin, Hyun-Gil
    • Korean Journal of Materials Research
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    • v.12 no.6
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    • pp.431-435
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    • 2002
  • The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

The Three-Dimensional Acoustic Field Analysis using the Type C CIP Method (C형 CIP법을 이용한 3차원 음장해석)

  • Lee, Chai-Bong;Oh, Sung-Qwan
    • The Journal of the Korea institute of electronic communication sciences
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    • v.5 no.2
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    • pp.125-132
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    • 2010
  • The authors have investigated the acoustic field analysis using the Constrained Interpolation Profile(CIP) Method recently proposed by Yabe. This study has examined the calculation accuracy of the three-dimensional(3-D) acoustic field analysis using the type C CIP method. In this paper we show phase error of type C CIP method and the dependence on the wave-propagation direction in the type C CIP acoustic field analysis, and then demonstrate that it gives less-diffusive results than conventional analysis. Moreover, in comparison between type C-1 CIP, type C-2 CIP, type M CIP and FDTD, reports the memory requirements and calculation time of each method.

Study of the Spatial Location Analysis for Domestic Offshore Wind Farm (국내 해상풍력 발전단지 입지 분석 연구)

  • Kim, Dong-Hwi;Lee, Yong-Jun;Ryu, In-Ho;Seo, Dae-Rim
    • Proceedings of the Korean Geotechical Society Conference
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    • 2010.09a
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    • pp.504-511
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    • 2010
  • After facing the fact such as fossil-fuel depletion, global warming, the Kyoto Protocol coming into force of mandatory reductions of carbon dioxide, the world is actively promoting the spread of the solar, wind, tidal, geothermal and other clean renewable energy technology development. Among them, wind power is the only alternative energy to secure a comparable price competition with fossil fuels because cheaper price power generation than other renewable energy when creating large-scale wind farm, thus wind power is the fastest growing industries in the world in the renewable energy field. Especially the offshore wind power is showing rapid growth as most of the wind power sector because of less changes of wind speed, no restrictions of land use, and large-scale development of offshore wind power. In this paper, the field of site selection and spatial location analysis techniques for development of large-scale offshore wind farm are discussed primarily. This paper shows overview of offshore wind power and establishment procedure for development of offshore wind farm.

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